CN105280234B - A kind of flash memory control chip - Google Patents
A kind of flash memory control chip Download PDFInfo
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- CN105280234B CN105280234B CN201510718337.0A CN201510718337A CN105280234B CN 105280234 B CN105280234 B CN 105280234B CN 201510718337 A CN201510718337 A CN 201510718337A CN 105280234 B CN105280234 B CN 105280234B
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- flash memory
- chip
- output voltage
- control chip
- boost circuit
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Abstract
The invention discloses a kind of flash memories to control chip, including auxiliary boost circuit module, auxiliary boost circuit module, the target voltage values for being provided to the flash memory control chip are determined for controlling adjusting using duration for chip according to flash memory, and chip is controlled for flash memory using itself output voltage according to the target voltage values and is boosted, chip, which is controlled, for flash memory increases auxiliary boost circuit, preventing the booster circuit failure of flash memory control chip interior causes flash memory to control chip failure, increases the service life of flash memory control chip.
Description
Technical field
The present invention relates to electronic information fields, control chip more particularly to a kind of flash memory.
Background technique
Flash memory (Flash Memory, abbreviation flash) is that a kind of the non-volatile of long-life (remains to protect under power blackout situation
Hold stored data information) memory, data deletion be not as unit of single byte but be with fixed block
Unit,
With the appearance of the new model flash memory of more and more deep submicron process, booster circuit inside flash at
For part more and more fragile in flash, the ratio for the case where full wafer flash caused by it goes wrong can not work
Also higher and higher, and as flash uses the increase of time, the output voltage for increasing booster circuit prolongs the flash service life
With very direct effect, but changeless output voltage will lead to the service life of more and more flash units inside flash
It terminates in advance.
Summary of the invention
In view of this, the main purpose of the present invention is to provide a kind of flash memories to control chip, core can be controlled with secondary flash
Piece realizes boosting.
To achieve the above object, the present invention provides a kind of flash memories to control chip, comprising:
Auxiliary boost circuit module, the use duration for controlling chip according to flash memory adjust described in determining be provided to
Flash memory controls the target voltage values of chip, and the use of itself output voltage is that flash memory controls chip liter according to the target voltage values
Pressure.Preferably, the auxiliary boost circuit module includes:
Initial output voltage value determines submodule, needs to control the initial output that chip provides for the flash memory for determining
Voltage value；
Output voltage values adjusting submodule, the use duration for controlling chip according to the flash memory adjust described initial defeated
Voltage out obtains needing to control the target output voltage that chip provides for the flash memory；
Boost submodule, for the use of the target output voltage being that flash memory control chip boosts.
Using a kind of flash memory control chip provided by the invention, including auxiliary boost circuit module, auxiliary boost circuit mould
Block determines the target voltage for being provided to the flash memory control chip for controlling adjusting using duration for chip according to flash memory
Value, and the use of itself output voltage is that flash memory controls chip boosting according to the target voltage values, chip, which is controlled, for flash memory increases
Auxiliary boost circuit prevents the booster circuit failure of flash memory control chip interior from flash memory being caused to control chip failure, increases
The service life of flash memory control chip.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The embodiment of invention for those of ordinary skill in the art without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is the structural schematic diagram that a kind of flash memory of the present invention controls chip embodiment；
Fig. 2 is the detailed construction schematic diagram that a kind of flash memory of the present invention controls chip embodiment.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
The present invention provides a kind of flash memories to control chip, and Fig. 1 shows the structural schematic diagram of flash memory control chip of the present invention,
Include:
Auxiliary boost circuit module 101, auxiliary boost circuit module, for controlling the use duration tune of chip according to flash memory
Whole determination is provided to the target voltage values of the flash memory control chip, and is exported according to the target voltage values using itself
Voltage is that flash memory controls chip boosting.As shown in Fig. 2, specifically, the auxiliary boost circuit module can include:
Initial output voltage value determines submodule 201, needs to provide for flash memory control chip for determination initial
Output voltage values；
Output voltage values adjusting submodule 202 determines that submodule 201 is connected with the initial output voltage, is used for root
The initial output voltage is adjusted according to the use duration of flash memory control chip, obtains needing to control chip for the flash memory mentioning
The target output voltage of confession；
Boost submodule 203, is connected with the output voltage values adjusting submodule 202, for defeated using the target
Voltage is that the flash memory controls chip boosting out.
Flash memory control chip has been grown erasing times using the time and has been increased, and has respective record, auxiliary boost circuit in the chips
Module can control the use duration dynamic adjustment and boosted output voltages value of chip with the flash memory of record, equal using loss
It accounts method and adjusts determining output voltage values.
Using a kind of flash memory control chip provided in this embodiment, including auxiliary boost circuit module, for according to target
Voltage value is that flash memory controls chip boosting using itself output voltage, controls chip for flash memory and increases auxiliary boost circuit, prevents
Only the booster circuit failure of flash memory control chip interior causes flash memory to control chip failure, and auxiliary boost circuit module can be with
Chip is controlled according to flash memory and dynamically adjusts itself output voltage values using being continuously increased for time, increases flash memory control chip
Service life,
It should be noted that all the embodiments in this specification are described in a progressive manner, each embodiment weight
Point explanation is the difference from other embodiments, and the same or similar parts between the embodiments can be referred to each other.
For system class embodiment, since it is basically similar to the method embodiment, so being described relatively simple, related place ginseng
See the part explanation of embodiment of the method.
Finally, it is to be noted that, herein, the terms "include", "comprise" or its any other variant are intended to
Cover non-exclusive inclusion, so that the process, method, article or equipment for including a series of elements not only includes those
Element, but also including other elements that are not explicitly listed, or further include for this process, method, article or setting
Standby intrinsic element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that
There is also other identical elements in the process, method, article or apparatus that includes the element.
Flash memory provided by the present invention control chip is described in detail above, specific case pair used herein
The principle of the present invention and embodiment are expounded, method of the invention that the above embodiments are only used to help understand
And its core concept；At the same time, for those skilled in the art, according to the thought of the present invention, in specific embodiment and
There will be changes in application range, in conclusion the contents of this specification are not to be construed as limiting the invention.
Claims (1)
1. a kind of flash memory controls chip characterized by comprising
Auxiliary boost circuit module, the use duration adjustment determination for controlling chip according to flash memory are provided to the flash memory
The target voltage values of chip are controlled, and the use of itself output voltage are that flash memory controls chip boosting according to the target voltage values；
Wherein, the auxiliary boost circuit module includes:
Initial output voltage value determines submodule, needs to control the initial output voltage that chip provides for the flash memory for determining
Value；
Output voltage values adjusting submodule, the use duration for controlling chip according to the flash memory adjust the initial output electricity
Pressure obtains needing to control the target output voltage that chip provides for the flash memory；
Boost submodule, for the use of the target output voltage being that flash memory control chip boosts.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510718337.0A CN105280234B (en) | 2015-10-29 | 2015-10-29 | A kind of flash memory control chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510718337.0A CN105280234B (en) | 2015-10-29 | 2015-10-29 | A kind of flash memory control chip |
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| Publication Number | Publication Date |
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| CN105280234A CN105280234A (en) | 2016-01-27 |
| CN105280234B true CN105280234B (en) | 2019-07-30 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201510718337.0A Active CN105280234B (en) | 2015-10-29 | 2015-10-29 | A kind of flash memory control chip |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101271725A (en) * | 2007-03-19 | 2008-09-24 | 深圳市劲升迪龙科技发展有限公司 | Flash memory card |
| CN102750981A (en) * | 2011-04-20 | 2012-10-24 | 拉碧斯半导体株式会社 | Internal power source voltage generating circuit of semiconductor memory and method for generating internal power source voltage |
| CN104112473A (en) * | 2014-04-28 | 2014-10-22 | 北京时代民芯科技有限公司 | Low-power rapid-boost FLASH charge pump control circuit |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014186775A (en) * | 2013-03-22 | 2014-10-02 | Toshiba Corp | Semiconductor memory device |
-
2015
- 2015-10-29 CN CN201510718337.0A patent/CN105280234B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101271725A (en) * | 2007-03-19 | 2008-09-24 | 深圳市劲升迪龙科技发展有限公司 | Flash memory card |
| CN102750981A (en) * | 2011-04-20 | 2012-10-24 | 拉碧斯半导体株式会社 | Internal power source voltage generating circuit of semiconductor memory and method for generating internal power source voltage |
| CN104112473A (en) * | 2014-04-28 | 2014-10-22 | 北京时代民芯科技有限公司 | Low-power rapid-boost FLASH charge pump control circuit |
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| Publication number | Publication date |
|---|---|
| CN105280234A (en) | 2016-01-27 |
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