CN105244445A - Manufacturing method for hybrid heterojunction solar cell - Google Patents
Manufacturing method for hybrid heterojunction solar cell Download PDFInfo
- Publication number
- CN105244445A CN105244445A CN201510790442.5A CN201510790442A CN105244445A CN 105244445 A CN105244445 A CN 105244445A CN 201510790442 A CN201510790442 A CN 201510790442A CN 105244445 A CN105244445 A CN 105244445A
- Authority
- CN
- China
- Prior art keywords
- electro
- conductive glass
- film layer
- preparation
- p3ht
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
- H10K30/35—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
- H10K30/35—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
- H10K30/352—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles the inorganic nanostructures being nanotubes or nanowires, e.g. CdTe nanotubes in P3HT polymer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Electromagnetism (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Composite Materials (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention belongs to the technical field of solar cell manufacturing, and relates to a manufacturing method for a hybrid heterojunction solar cell. The manufacturing method comprises the five steps of manufacturing a conductive glass substrate, manufacturing an ordered TiO2 nanorod array film layer, manufacturing an Sb2S3 nano film layer, manufacturing a P3HT nano film layer and manufacturing an Ag film electrode. The ordered TiO2 nanorod array film layer is manufactured by adopting a one-step low-temperature hydrothermal method, the Sb2S3 nano film layer is formed by depositing Sb2S3 on the surface of the ordered TiO2 nanorod array film layer by adopting a chemical liquid phase deposition method, the P3HT nano film layer is formed by depositing P3HT on the surface of the Sb2S3 nano film layer by adopting a spin-coating method, and an Ag electrode is plated on the surface of the P3HT nano film layer by adopting a thermal evaporation method or a magnetron sputtering method at last, thereby manufacturing the TiO2/Sb2S3/P3HT hybrid heterojunction solar cell. The manufacturing method has the advantages of simple and controllable process, scientific and reasonable principle, low energy consumption and production cost, high operability, energy conservation, environment protection and friendly operating environment, can be recycled and reused, and is suitable for large-scale production, popularization and use.
Description
Technical field:
The invention belongs to solar cell preparing technical field, relate to a kind of preparation method of hybrid heterojunctions solar cell, by improving titanium dioxide (TiO
2) light abstraction width of nanometer stick array and photo-generated carrier mobility, reduce the recombination rate of photo-generated carrier, strengthen the photoelectric conversion performance of hybrid heterojunctions solar cell.
Background technology:
Along with the fast development of World Economics, consumed in a large number based on the fossil energy of coal, oil and natural gas, cause serious problem of environmental pollution simultaneously, research and develop reproducible and alternative new forms of energy, to the sustainable development realizing human society, there is great strategic importance.Solar energy has green, renewable and never exhausted feature, is the energy of the most potential substitute fossil fuels.Solar cell is also called solar chip and photocell, it is the device directly light energy conversion being become electric energy by photoelectric effect or Photochemical effects, utilize the optoelectronic semiconductor thin slice of the sunlight direct generation of electricity, as long as arrived by illumination, moment is exportable voltage generation current when there being loop just, physically be called photovoltaic, be called for short photovoltaic.Solar cell for main flow, is also in budding stage with the enforcement solar cell of Photochemical effects work with the thin-film type solar cell of photoelectric effect work; In the prior art, there is manufacturing process complexity in crystal silicon solar energy battery, the problem of cost height and contaminated environment, and be limited by the photoelectric efficiency attenuating effect of its material initiation, and stability is not high, affects practical application.It is many that hybrid inorganic-organic heterojunction solar battery has material category, and preparation technology is simple, and low in raw material price, can prepare the advantage of large area and flexible device, have a extensive future.TiO
2owing to having ability and the photoelectrochemical behaviour of excellent anti-light corrosion, be widely used in solar cell, photocatalysis and photolysis water hydrogen field.Chinese Patent Application No. is the match shape TiO of 201410641369.0
2the preparation method of nano particle and nanometer rods composite array discloses and on transparent conducting glass substrate, prepares titanic oxide nanorod array by hydro thermal method, using high pure metal Ti as sputtering target material, pass through direct current magnetron sputtering process, the titanium dioxide nano-rod top end surface depositing Ti nano particle prepared, by the Annealing Crystallization in air, form match shape TiO
2nano particle and nanometer rods composite array; Compare traditional nano-particle material, this one-dimensional array structure can provide direct channel for carrier transport, reduces transmission resistance and Carrier recombination, and can increase the dispersion effect of incident light, improves efficiency of light absorption.Chinese Patent Application No. is in the structure of the disclosed battery of hybrid inorganic-organic solar cell of 201510016012.8 and preparation method thereof, at TiO
2one deck triphenylamine is deposited, to improve the mobility in hole between nanometer stick array and the poly-3-hexyl thiophene of p-type organic polymer.But due to TiO
2energy gap is larger, and it is narrow that above patent all exists spectral response range, the shortcoming that sunlight utilance is lower, thus causes the photoelectric conversion efficiency of solar cell lower.So far yet there are no people to report and can improve TiO
2the interface contact of nanometer stick array heterojunction solar battery, can widen again the research work of its light abstraction width.Therefore, the TiO with high-ratio surface sum excellent electron transmission performance is being adopted
2the structure of hybrid heterojunctions solar cell is improved while nanometer stick array, can ensure that hybrid heterojunctions solar cell has that efficiency of light absorption is high, the recombination probability of electron-hole is low and carrier mobility advantages of higher, obtain larger current density and higher electricity conversion, advance the practicalization of hybrid heterojunctions solar cell, there is good society and economic worth, have a extensive future.
Summary of the invention:
The object of the invention is to the shortcoming overcoming prior art existence, seek the preparation method designing a kind of hybrid heterojunctions solar cell, be intended to improve TiO
2the light abstraction width of nanometer stick array and photo-generated carrier mobility, reduce the recombination rate of photo-generated carrier, thus improve current density and the photoelectric conversion performance of hybrid heterojunctions solar cell.
To achieve these goals, the preparation method of the hybrid heterojunctions solar cell that the present invention relates to comprises and prepares electro-conductive glass substrate, prepares orderly TiO
2nano-stick array thin film layer, prepare antimonous sulfide (Sb
2s
3) nanometer thin rete, preparation 3-hexyl thiophene (P3HT) nanometer thin rete and preparation silver (Ag) membrane electrode five steps:
(1) electro-conductive glass substrate, is prepared: be that the electro-conductive glass of 0.8-2mm is cut into the square or rectangular being of a size of 1-4cm × 1-4cm by thickness, dry up with nitrogen with after acetone, ethanol and deionized water ultrasonic cleaning successively, complete the preparation of electro-conductive glass substrate;
(2), orderly TiO is prepared
2nano-stick array thin film layer: by 0.2-0.4ml titanium source, 10-15ml mass percent concentration be 37% hydrochloric acid (HCl) aqueous solution and 20ml deionized water mix under magnetic stirring, obtain the TiO of 20-30ml
2precursor solution, by electro-conductive glass substrate and TiO
2it is 50ml and liner is the stainless steel cauldron of polytetrafluoroethylene that precursor solution is placed in volume, carry out a step low-temperature hydrothermal reaction 2-24h under the condition of 90-150 DEG C after, electro-conductive glass substrate is taken out, use the air drying at 60-150 DEG C after the substrate of washed with de-ionized water electro-conductive glass again, obtain being enclosed with orderly TiO
2the electro-conductive glass substrate of nano-stick array thin film layer, completes orderly TiO
2the preparation of nano-stick array thin film layer;
(3), Sb is prepared
2s
3nanometer thin rete: the trichloride antimony (SbCl of to be 30mL and concentration by volume be 0.01-0.04mol/L
3) with the sodium thiosulfate (Na of volume to be 30mL and concentration be 0.1-0.4mol/L
2s
2o
3) pour in beaker and mix, adopt conventional chemical liquid deposition the electro-conductive glass substrate that step (2) obtains to be placed in beaker under the condition of 0 DEG C and deposit 1-5h, take out electro-conductive glass substrate and dry in nitrogen atmosphere with after washed with de-ionized water, then electro-conductive glass substrate is placed in the nitrogen atmosphere Annealing Crystallization 1-3h under 250-400 DEG C of condition, obtains being enclosed with TiO
2/ Sb
2s
3the electro-conductive glass substrate of composite Nano rod array film layer, completes Sb
2s
3the preparation of nanometer thin rete;
(4), preparation P3HT nanometer thin rete: adopt conventional spin-coating method to anneal under 150 DEG C of conditions 0.5-2h in surface deposition one deck P3HT of the obtained electro-conductive glass substrate of step (4), obtain being enclosed with TiO
2/ Sb
2s
3the electro-conductive glass substrate of/P3HT composite Nano rod array film layer, completes the preparation of P3HT nanometer thin rete;
(5), preparation Ag membrane electrode: use conventional hot vapour deposition method or magnetron sputtering method in the plated surface Ag electrode of the obtained electro-conductive glass substrate of step (4) under vacuum, obtain TiO
2/ Sb
2s
3/ P3HT hybrid heterojunctions solar cell.
The electro-conductive glass that the present invention relates to comprises FTO electro-conductive glass and ITO electro-conductive glass, and FTO electro-conductive glass is the tin ash (SnO of doped with fluorine
2) transparent conducting glass; ITO electro-conductive glass on sodium calcium base or silicon boryl substrate glass, plates indium oxide layer tin film be processed into.
The titanium source that the present invention relates to comprises isopropyl titanate (TTIP) and butyl titanate (TBT).
The P3HT that the present invention relates to is p-type P3HT.
It is high that hybrid heterojunctions solar cell prepared by the present invention has electricity conversion, long service life, the advantage of energy conversion efficiency height and stable electric power; Hybrid heterojunctions solar cell adds interface-modifying layer to improve its opto-electronic conversion performance, significant to the practicalization promoting hybrid heterojunctions solar cell.
The present invention compared with prior art, adopts a step hydrothermal reaction at low temperature to prepare orderly TiO
2nano-stick array thin film layer, then adopt simple and easy to do chemical liquid deposition at orderly TiO
2the surface deposition Sb of nano-stick array thin film layer
2s
3form Sb
2s
3nanometer thin rete, then adopts spin-coating method at Sb
2s
3the surface deposition P3HT of nanometer thin rete forms P3HT nanometer thin rete, finally adopts hot vapour deposition method or magnetron sputtering method at the plated surface Ag electrode of P3HT nanometer thin rete, prepares TiO
2/ Sb
2s
3/ P3HT inorganic-organic hybridization heterojunction solar battery; Its technique is simply controlled, and scientific in principle is reasonable, energy consumption and production cost low, strong operability, environment for use is friendly, can recycling, is easy to large-scale production and promotes the use of, having important positive effect to environmental protection.
Accompanying drawing illustrates:
Fig. 1 is the structural principle schematic diagram of hybrid heterojunctions solar cell prepared by the present invention.
Fig. 2 is the FTO electro-conductive glass substrate of the embodiment of the present invention 1 preparation and orderly TiO
2the XRD collection of illustrative plates of nano-stick array thin film layer, orderly TiO
2nano-stick array thin film layer is rutile-type.
Fig. 3 is orderly TiO prepared by the embodiment of the present invention
2the stereoscan photograph (a) of nano-stick array thin film layer and energy spectrogram (b).
Fig. 4 is orderly TiO prepared by the embodiment of the present invention 1
2the low power transmission electron microscope photo of nano-stick array thin film layer and selected area electron diffraction figure, orderly TiO
2nano-stick array thin film layer is monocrystalline rutile-type.
Fig. 5 is orderly TiO prepared by the embodiment of the present invention 7
2nano-stick array thin film layer is at the suprabasil stereoscan photograph of FTO electro-conductive glass, and wherein a, c and d are vertical view, and b is 45 ° of oblique views.
Fig. 6 is the orderly TiO of the embodiment of the present invention 8, embodiment 9 and embodiment 10 preparation
2nano-stick array thin film layer is at the suprabasil stereoscan photograph of FTO electro-conductive glass, and wherein a and c is upward view, b and d is 45 ° of oblique views.
Fig. 7 is Sb prepared by the embodiment of the present invention 14
2s
3the stereoscan photograph of nanometer thin rete, wherein a and c is upward view, b and d is sectional view.
Embodiment:
Below by embodiment, also the invention will be further described by reference to the accompanying drawings.
Embodiment 1:
The preparation method of the hybrid heterojunctions solar cell that the present embodiment relates to comprises and prepares electro-conductive glass substrate, prepares orderly TiO
2nano-stick array thin film layer, prepare antimonous sulfide (Sb
2s
3) nanometer thin rete, preparation 3-hexyl thiophene (P3HT) nanometer thin rete and preparation silver (Ag) membrane electrode five steps:
(1), electro-conductive glass substrate is prepared: be that the FTO transparent conducting glass of 0.8mm is cut into the square being of a size of 1cm × 1cm by thickness, dry up with nitrogen with after acetone, ethanol and deionized water ultrasonic cleaning successively, complete the preparation of electro-conductive glass substrate;
(2), orderly TiO is prepared
2nano-stick array thin film layer: by TTIP, 10ml mass percent of 0.2ml be 37% hydrochloric acid (HCl) aqueous solution and 20ml deionized water mix under magnetic stirring, obtain the TiO of 30ml
2precursor solution, by electro-conductive glass substrate and TiO
2it is 50ml and liner is the stainless steel cauldron of polytetrafluoroethylene that precursor solution is placed in volume, carry out a step low-temperature hydrothermal reaction 15h under the condition of 130 DEG C after, electro-conductive glass substrate is taken out, with the air drying at 60 DEG C after the substrate of washed with de-ionized water electro-conductive glass, obtain being enclosed with orderly TiO
2the electro-conductive glass substrate of nano-stick array thin film layer, completes orderly TiO
2the preparation of nano-stick array thin film layer;
(3), Sb is prepared
2s
3nanometer thin rete: the trichloride antimony (SbCl of to be 30mL and concentration by volume be 0.025mol/L
3) with the sodium thiosulfate (Na of volume to be 30mL and concentration be 0.25mol/L
2s
2o
3) pour in beaker and mix, adopt conventional chemical liquid deposition the electro-conductive glass substrate that step (2) obtains to be placed in beaker under the condition of 0 DEG C and deposit 2h, take out electro-conductive glass substrate and dry in nitrogen atmosphere with after washed with de-ionized water, then electro-conductive glass substrate is placed in the nitrogen atmosphere Annealing Crystallization 1h under 250 DEG C of conditions, obtains being enclosed with TiO
2/ Sb
2s
3the electro-conductive glass substrate of composite Nano rod array film layer, completes Sb
2s
3the preparation of nanometer thin rete;
(4), preparation P3HT nanometer thin rete: adopt conventional spin-coating method to anneal under 150 DEG C of conditions 1h in surface deposition one deck p-type P3HT of the obtained electro-conductive glass substrate of step (4), obtain being enclosed with TiO
2/ Sb
2s
3the electro-conductive glass substrate of/P3HT composite Nano rod array film layer, completes the preparation of P3HT nanometer thin rete;
(5), preparation Ag membrane electrode: use conventional hot vapour deposition method or magnetron sputtering method in the plated surface Ag electrode of the obtained electro-conductive glass substrate of step (4) under vacuum, obtain TiO
2/ Sb
2s
3/ P3HT hybrid heterojunctions solar cell.
The principle of the preparation method of the hybrid heterojunctions solar cell that the present embodiment relates to is: the TiO with good anti-light corrosion and photoelectrochemical behaviour
2be widely used in the field of solar cell, photocatalysis and photolysis water hydrogen, with TTIP or TBT for titanium source, water is solvent, hydrochloric acid is used to control titanium source hydrolysis rate, by controlling different growth temperatures and time, the substrate of ITO or FTO electro-conductive glass adopt a step hydrothermal reaction at low temperature prepare the orderly TiO of the controlled one-dimentional structure of length, diameter and density
2nano-stick array thin film layer, specific area is comparatively large, is conducive to absorbing sunlight, meanwhile, can provides active path for electric transmission, reduce the probability of recombination of electron-hole pair, improve photoelectric conversion efficiency; But, TiO
2energy gap is comparatively large, and spectral response range is narrower, and sunlight utilance is lower, Sb
2s
3be photochemical catalyst, can absorb visible ray, at 600nm wavelength, place has the higher absorption coefficient of light, and photo-generated carrier has higher mobility on its surface, Sb
2s
3the electron hole pair produced after extinction is promptly released.Adopt chemical liquid deposition at orderly TiO
2the surface deposition Sb of nano-stick array thin film layer
2s
3nanometer thin rete; Sb
2s
3by improving orderly TiO
2the mobility of nano-stick array thin film layer surface photo-generated carrier, accelerate electron hole pair separation, reduce photo-generated carrier recombination rate, widen light abstraction width and increase the object that efficiency of light absorption reaches the photoelectric conversion efficiency improving hybrid heterojunctions solar cell; Then adopt spin-coating method that P3HT is deposited on Sb
2s
3nanometer thin rete is formed P3HT nanometer thin rete, P3HT nanometer thin rete can reduce the loss of light; Finally adopt hot vapour deposition method or magnetron sputtering method at the plated surface Ag membrane electrode of P3HT nanometer thin rete, form hybrid heterojunctions solar cell.
Orderly TiO prepared by the present embodiment
2nano-stick array thin film layer is evenly distributed in order, and density is comparatively large, and diameter is 75-90nm, and length is 0.8-1.1 μm, Sb
2s
3the thickness of nanometer thin rete is 250nm.
It is high that hybrid heterojunctions solar cell prepared by the present embodiment has electricity conversion, long service life, the advantages such as energy conversion efficiency height and stable electric power; Hybrid heterojunctions solar cell adds interface-modifying layer to improve its opto-electronic conversion performance, significant to the practicalization promoting hybrid heterojunctions solar cell.
Embodiment 2:
The processing step of the present embodiment is with embodiment 1, and the thickness of the FTO transparent conducting glass that difference is in step (1) is 2mm, is cut into the square being of a size of 4 × 4cm, the orderly TiO of preparation
2nano-stick array thin film layer is evenly distributed in order, and density is comparatively large, and diameter is 75-90nm, and length is 0.8-1.1 μm
Embodiment 3:
The processing step of the present embodiment is with embodiment 1, and difference is that the volume that in step (2), TTIP volume is 0.4ml, mass percent is hydrochloric acid (HCl) aqueous solution of 37% is 15ml, the orderly TiO of preparation
2nano-stick array thin film layer is evenly distributed in order, and density is less, and diameter is 80-95nm, and length is 0.9-1.2 μm.
Embodiment 4:
The processing step of the present embodiment is with embodiment 1, and the temperature of the step low-temperature hydrothermal reaction that difference is in step (2) is 90 DEG C, and the time is 2h, the orderly TiO of preparation
2nano-stick array thin film layer is evenly distributed in order, and density is less, and diameter is 15-20nm, and length is 0.10-0.15 μm.
Embodiment 5:
The processing step of the present embodiment is with embodiment 1, and the temperature of the step low-temperature hydrothermal reaction that difference is in step (2) is 90 DEG C, and the time is 18h, the orderly TiO of preparation
2nano-stick array thin film layer is evenly distributed in order, and density is less, and diameter is 90-110nm, and length is 0.75-1 μm.
Embodiment 6:
The processing step of the present embodiment is with embodiment 1, and the temperature of the step low-temperature hydrothermal reaction that difference is in step (2) is 90 DEG C, and the time is 24h, the orderly TiO of preparation
2nano-stick array thin film layer is evenly distributed in order, and density is comparatively large, and diameter is 100-200nm, and length is 1.0-1.5 μm.
Embodiment 7:
The processing step of the present embodiment is with embodiment 1, and the temperature of the step low-temperature hydrothermal reaction that difference is in step (2) is 120 DEG C, and the time is 6h, the orderly TiO of preparation
2nano-stick array thin film layer is evenly distributed in order, and density is less, and diameter is 20-30nm, and length is 0.15-0.25 μm.
Embodiment 8:
The processing step of the present embodiment is with embodiment 1, and the temperature of the step low-temperature hydrothermal reaction that difference is in step (2) is 150 DEG C, and the time is 6h, the orderly TiO of preparation
2nano-stick array thin film layer is evenly distributed in order, and density is comparatively large, and diameter is 75-115nm, and length is 1.1-1.7 μm.
Embodiment 9:
The processing step of the present embodiment is with embodiment 1, and the temperature of the step low-temperature hydrothermal reaction that difference is in step (2) is 150 DEG C, and the time is 10h, the orderly TiO of preparation
2nano-stick array thin film layer is evenly distributed in order, and density is comparatively large, and diameter is 60-300nm, and length is 3-4 μm.
Embodiment 10:
The processing step of the present embodiment is with embodiment 1, and the temperature of the step low-temperature hydrothermal reaction that difference is in step (2) is 150 DEG C, and the time is 13h, the orderly TiO of preparation
2nano-stick array thin film layer is evenly distributed in order, and density is comparatively large, and diameter is 100-300nm, and length is 5 μm.
Embodiment 11:
The processing step of the present embodiment is with embodiment 1, and difference is the SbCl in step (3)
3concentration be 0.01mol/L, Na
2s
2o
3concentration be the Sb of 0.1mol/L, preparation
2s
3the thickness of nanometer thin rete is 160nm.
Embodiment 12:
The processing step of the present embodiment is with embodiment 1, and difference is the SbCl in step (3)
3concentration be 0.04mol/L, Na
2s
2o
3concentration be the Sb of 0.4mol/L, preparation
2s
3the thickness of nanometer thin rete is 400nm.
Embodiment 13:
The processing step of the present embodiment is with embodiment 1, and the sedimentation time of the chemical deposition that difference is in step (3) is the Sb of 1h, preparation
2s
3the thickness of nanometer thin rete is 150nm.
Embodiment 14:
The processing step of the present embodiment is with embodiment 1, and the sedimentation time of the chemical deposition that difference is in step (3) is the Sb of 5h, preparation
2s
3the thickness of nanometer thin rete is 1000nm.
Embodiment 15:
The processing step of the present embodiment is with embodiment 1, and difference is that in step (3), Annealing Crystallization temperature is 400 DEG C, and crystallization time is the Sb of 3h, preparation
2s
3the thickness of nanometer thin rete is 250nm.
Claims (4)
1. a preparation method for hybrid heterojunctions solar cell, is characterized in that comprising and prepares electro-conductive glass substrate, prepares orderly TiO
2nano-stick array thin film layer, preparation Sb
2s
3nanometer thin rete, preparation P3HT nanometer thin rete and preparation Ag membrane electrode five steps:
(1) electro-conductive glass substrate, is prepared: be that the electro-conductive glass of 0.8-2mm is cut into the square or rectangular being of a size of 1-4cm × 1-4cm by thickness, dry up with nitrogen with after acetone, ethanol and deionized water ultrasonic cleaning successively, complete the preparation of electro-conductive glass substrate;
(2), orderly TiO is prepared
2nano-stick array thin film layer: by 0.2-0.4ml titanium source, 10-15ml mass percent concentration be 37% aqueous hydrochloric acid solution and 20ml deionized water mix under magnetic stirring, obtain the TiO of 20-30ml
2precursor solution, by electro-conductive glass substrate and TiO
2it is 50ml and liner is the stainless steel cauldron of polytetrafluoroethylene that precursor solution is placed in volume, carry out a step low-temperature hydrothermal reaction 2-24h under the condition of 90-150 DEG C after, electro-conductive glass substrate is taken out, use the air drying at 60-150 DEG C after the substrate of washed with de-ionized water electro-conductive glass again, obtain being enclosed with orderly TiO
2the electro-conductive glass substrate of nano-stick array thin film layer, completes orderly TiO
2the preparation of nano-stick array thin film layer;
(3), Sb is prepared
2s
3nanometer thin rete: the sodium thiosulfate of trichloride antimony and the volume of to be 30mL and concentration by volume be 0.01-0.04mol/L to be 30mL and concentration be 0.1-0.4mol/L is poured in beaker and mixed, adopt conventional chemical liquid deposition the electro-conductive glass substrate that step (2) obtains to be placed in beaker under the condition of 0 DEG C and deposit 1-5h, take out electro-conductive glass substrate and dry in nitrogen atmosphere with after washed with de-ionized water, then electro-conductive glass substrate is placed in the nitrogen atmosphere Annealing Crystallization 1-3h under 250-400 DEG C of condition, obtains being enclosed with TiO
2/ Sb
2s
3the electro-conductive glass substrate of composite Nano rod array film layer, completes Sb
2s
3the preparation of nanometer thin rete;
(4), preparation P3HT nanometer thin rete: adopt conventional spin-coating method to anneal under 150 DEG C of conditions 0.5-2h in surface deposition one deck P3HT of the obtained electro-conductive glass substrate of step (4), obtain being enclosed with TiO
2/ Sb
2s
3the electro-conductive glass substrate of/P3HT composite Nano rod array film layer, completes the preparation of P3HT nanometer thin rete;
(5), preparation Ag membrane electrode: use conventional hot vapour deposition method or magnetron sputtering method in the plated surface Ag electrode of the obtained electro-conductive glass substrate of step (4) under vacuum, obtain TiO
2/ Sb
2s
3/ P3HT hybrid heterojunctions solar cell.
2. the preparation method of hybrid heterojunctions solar cell according to claim 1, it is characterized in that described electro-conductive glass comprises FTO electro-conductive glass and ITO electro-conductive glass, FTO electro-conductive glass is the transparent conducting glass of the tin ash of doped with fluorine; ITO electro-conductive glass on sodium calcium base or silicon boryl substrate glass, plates indium oxide layer tin film be processed into.
3. the preparation method of hybrid heterojunctions solar cell according to claim 1, is characterized in that described titanium source comprises isopropyl titanate and butyl titanate.
4. the preparation method of hybrid heterojunctions solar cell according to claim 1, is characterized in that described P3HT is p-type P3HT.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510790442.5A CN105244445B (en) | 2015-11-17 | 2015-11-17 | A kind of preparation method of hybrid heterojunctions solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510790442.5A CN105244445B (en) | 2015-11-17 | 2015-11-17 | A kind of preparation method of hybrid heterojunctions solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105244445A true CN105244445A (en) | 2016-01-13 |
| CN105244445B CN105244445B (en) | 2018-08-03 |
Family
ID=55042009
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510790442.5A Expired - Fee Related CN105244445B (en) | 2015-11-17 | 2015-11-17 | A kind of preparation method of hybrid heterojunctions solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105244445B (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105762207A (en) * | 2016-03-30 | 2016-07-13 | 北京化工大学 | Hydrothermal preparation method of Sb2S3 semiconductor film with narrow band gap |
| CN107863401A (en) * | 2017-10-24 | 2018-03-30 | 三峡大学 | A kind of preparation method of antimony trisulfide base full-inorganic thin-film solar cells |
| CN109256468A (en) * | 2018-07-31 | 2019-01-22 | 中国科学院合肥物质科学研究院 | A kind of hydridization solar cell and preparation method thereof integrated based on a variety of hetero-junctions performances |
| CN109603918A (en) * | 2018-11-12 | 2019-04-12 | 东莞理工学院 | A kind of preparation method of the compound golden light catalyst of poly- 3- hexyl thiophene cladding titanium dioxide |
| CN109860317A (en) * | 2018-12-19 | 2019-06-07 | 湖州师范学院 | A kind of carbon is to electrode antimony trisulfide thin film solar cell and preparation method thereof |
| CN114242903A (en) * | 2021-11-30 | 2022-03-25 | 华中科技大学 | Preparation method and application of solar cell heterojunction |
| CN114284372A (en) * | 2021-11-30 | 2022-04-05 | 湖北文理学院 | Three-layer nanorod array heterojunction structure and preparation method thereof |
| CN114577863A (en) * | 2022-03-01 | 2022-06-03 | 国网电力科学研究院武汉南瑞有限责任公司 | Gallium oxide film hydrogen sensor and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2538452A2 (en) * | 2010-02-18 | 2012-12-26 | Korea Research Institute Of Chemical Technology | All-solid-state heterojunction solar cell |
| EP2560212A2 (en) * | 2010-02-18 | 2013-02-20 | Korea Research Institute Of Chemical Technology | Method for manufacturing a nanostructured inorganic/organic heterojunction solar cell |
| CN103367512A (en) * | 2013-06-27 | 2013-10-23 | 中国科学院等离子体物理研究所 | Solar battery based on inorganic bulk heterojunction and preparation method thereof |
| CN103762316A (en) * | 2013-12-24 | 2014-04-30 | 中电电气（南京）太阳能研究院有限公司 | Method for preparing Sb2S3-base organic and inorganic composite solar cell |
| CN104617221A (en) * | 2014-06-05 | 2015-05-13 | 河北科技大学 | Organic-inorganic hybrid solar cell and preparation method thereof |
-
2015
- 2015-11-17 CN CN201510790442.5A patent/CN105244445B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2538452A2 (en) * | 2010-02-18 | 2012-12-26 | Korea Research Institute Of Chemical Technology | All-solid-state heterojunction solar cell |
| EP2560212A2 (en) * | 2010-02-18 | 2013-02-20 | Korea Research Institute Of Chemical Technology | Method for manufacturing a nanostructured inorganic/organic heterojunction solar cell |
| CN103367512A (en) * | 2013-06-27 | 2013-10-23 | 中国科学院等离子体物理研究所 | Solar battery based on inorganic bulk heterojunction and preparation method thereof |
| CN103762316A (en) * | 2013-12-24 | 2014-04-30 | 中电电气（南京）太阳能研究院有限公司 | Method for preparing Sb2S3-base organic and inorganic composite solar cell |
| CN104617221A (en) * | 2014-06-05 | 2015-05-13 | 河北科技大学 | Organic-inorganic hybrid solar cell and preparation method thereof |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105762207A (en) * | 2016-03-30 | 2016-07-13 | 北京化工大学 | Hydrothermal preparation method of Sb2S3 semiconductor film with narrow band gap |
| CN107863401A (en) * | 2017-10-24 | 2018-03-30 | 三峡大学 | A kind of preparation method of antimony trisulfide base full-inorganic thin-film solar cells |
| CN107863401B (en) * | 2017-10-24 | 2019-09-24 | 三峡大学 | A kind of preparation method of antimony trisulfide base full-inorganic thin-film solar cells |
| CN109256468A (en) * | 2018-07-31 | 2019-01-22 | 中国科学院合肥物质科学研究院 | A kind of hydridization solar cell and preparation method thereof integrated based on a variety of hetero-junctions performances |
| CN109603918A (en) * | 2018-11-12 | 2019-04-12 | 东莞理工学院 | A kind of preparation method of the compound golden light catalyst of poly- 3- hexyl thiophene cladding titanium dioxide |
| CN109603918B (en) * | 2018-11-12 | 2022-01-25 | 东莞理工学院 | Preparation method of poly 3-hexylthiophene coated titanium dioxide composite gold photocatalyst |
| CN109860317A (en) * | 2018-12-19 | 2019-06-07 | 湖州师范学院 | A kind of carbon is to electrode antimony trisulfide thin film solar cell and preparation method thereof |
| CN114242903A (en) * | 2021-11-30 | 2022-03-25 | 华中科技大学 | Preparation method and application of solar cell heterojunction |
| CN114284372A (en) * | 2021-11-30 | 2022-04-05 | 湖北文理学院 | Three-layer nanorod array heterojunction structure and preparation method thereof |
| CN114284372B (en) * | 2021-11-30 | 2024-05-24 | 湖北文理学院 | Three-layer nanorod array heterojunction structure and preparation method thereof |
| CN114577863A (en) * | 2022-03-01 | 2022-06-03 | 国网电力科学研究院武汉南瑞有限责任公司 | Gallium oxide film hydrogen sensor and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105244445B (en) | 2018-08-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105244445A (en) | Manufacturing method for hybrid heterojunction solar cell | |
| CN104134711B (en) | A kind of preparation method of perovskite solar cell | |
| CN102569508B (en) | Thin-film solar photovoltaic cell with nano wire array structure and preparation method for thin-film solar photovoltaic cell | |
| CN102779864B (en) | Cadmium telluride thin-film battery and manufacturing method thereof | |
| CN104409642A (en) | Preparation method of perovskite/P-type quantum dot composite solar cell | |
| CN103866389B (en) | Porous monocrystalline nanometer sheet TiN preparation method and purposes on a kind of carbon fiber | |
| CN102280588B (en) | Silicon-based nuclear shell nanowire photovoltaic cell and preparation process thereof | |
| Yugis et al. | Review on metallic and plastic flexible dye sensitized solar cell | |
| CN105304820A (en) | Perovskite solar cell with enhanced graphene and preparation method thereof | |
| CN103151175A (en) | Cadmium sulfide (CdS) quantum dot sensitized branching titanium dioxide (TiO2) nanorod array electrode and preparation method and usage thereof | |
| CN104037324A (en) | Perovskite hybrid solar cell based on cadmium sulfide nanoarray | |
| CN102569444B (en) | Solar cell structure with wide spectrum high absorption and manufacturing method thereof | |
| CN105304819A (en) | Solar cell containing perovskite material and preparation method thereof | |
| CN102013328B (en) | Dye-sensitized solar cell composite photo-anode and preparation method thereof | |
| Anscombe | Solar cells that mimic plants | |
| JP5641981B2 (en) | Photoelectric conversion element that can be manufactured by a method suitable for mass production | |
| Lin et al. | Progress and Perspectives of Solar Cells: A Critical Review | |
| CN103618047A (en) | Environment-friendly heavy metal-free quantum dot solar cell and manufacturing method thereof | |
| CN105355790A (en) | Low cost perovskite solar cell being suitable for production | |
| CN105280822A (en) | Low-cost solar cell suitable for production | |
| CN104167453A (en) | Perovskite solar battery based on CdSe nanocrystals and preparation method | |
| CN105304818A (en) | High-efficiency perovskite solar cell and preparation method thereof | |
| CN101262019B (en) | Photoelectrical chemical solar battery for silicon nano line | |
| CN104851942B (en) | The preparation method of ZnO/I doping ZnO core/shell structure nano-wire array | |
| CN103050287A (en) | Method for preparing photo-anode by transferring and adhering titanium dioxide nano tube array film to surface of conductive glass |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180803 Termination date: 20201117 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |