CN104037324A - Perovskite hybrid solar cell based on cadmium sulfide nanoarray - Google Patents
Perovskite hybrid solar cell based on cadmium sulfide nanoarray Download PDFInfo
- Publication number
- CN104037324A CN104037324A CN201410289152.8A CN201410289152A CN104037324A CN 104037324 A CN104037324 A CN 104037324A CN 201410289152 A CN201410289152 A CN 201410289152A CN 104037324 A CN104037324 A CN 104037324A
- Authority
- CN
- China
- Prior art keywords
- solar cell
- cadmium sulfide
- layer
- metal electrode
- perovskite
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052980 cadmium sulfide Inorganic materials 0.000 title claims abstract description 40
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 title claims abstract description 24
- 239000000463 material Substances 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 229910052751 metal Inorganic materials 0.000 claims abstract description 23
- 239000002184 metal Substances 0.000 claims abstract description 23
- 239000002071 nanotube Substances 0.000 claims abstract description 7
- 239000002070 nanowire Substances 0.000 claims abstract description 6
- 230000005540 biological transmission Effects 0.000 claims description 32
- 239000000203 mixture Substances 0.000 claims description 20
- YSHMQTRICHYLGF-UHFFFAOYSA-N 4-tert-butylpyridine Chemical compound CC(C)(C)C1=CC=NC=C1 YSHMQTRICHYLGF-UHFFFAOYSA-N 0.000 claims description 19
- 150000002220 fluorenes Chemical class 0.000 claims description 11
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 11
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims description 11
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 9
- 229910052731 fluorine Inorganic materials 0.000 claims description 9
- 239000011737 fluorine Substances 0.000 claims description 9
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 9
- 229910001887 tin oxide Inorganic materials 0.000 claims description 9
- 239000010453 quartz Substances 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 239000011777 magnesium Substances 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 3
- 238000000862 absorption spectrum Methods 0.000 abstract description 12
- 229910044991 metal oxide Inorganic materials 0.000 abstract description 7
- 150000004706 metal oxides Chemical class 0.000 abstract description 7
- 238000005245 sintering Methods 0.000 abstract description 6
- 239000002073 nanorod Substances 0.000 abstract description 3
- 238000005265 energy consumption Methods 0.000 abstract description 2
- 238000002360 preparation method Methods 0.000 abstract description 2
- 230000005525 hole transport Effects 0.000 abstract 2
- 238000000034 method Methods 0.000 description 28
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 21
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 14
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 14
- 238000005406 washing Methods 0.000 description 14
- 238000004528 spin coating Methods 0.000 description 12
- XDXWNHPWWKGTKO-UHFFFAOYSA-N 207739-72-8 Chemical compound C1=CC(OC)=CC=C1N(C=1C=C2C3(C4=CC(=CC=C4C2=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC(=CC=C1C1=CC=C(C=C13)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 XDXWNHPWWKGTKO-UHFFFAOYSA-N 0.000 description 10
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 9
- 229910052744 lithium Inorganic materials 0.000 description 9
- 229910010413 TiO 2 Inorganic materials 0.000 description 7
- 239000003795 chemical substances by application Substances 0.000 description 7
- 239000008367 deionised water Substances 0.000 description 7
- 229910021641 deionized water Inorganic materials 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000007738 vacuum evaporation Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000001027 hydrothermal synthesis Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000003574 free electron Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000027756 respiratory electron transport chain Effects 0.000 description 2
- 238000003980 solgel method Methods 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- JTCFNJXQEFODHE-UHFFFAOYSA-N [Ca].[Ti] Chemical compound [Ca].[Ti] JTCFNJXQEFODHE-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 238000013086 organic photovoltaic Methods 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
- H10K30/35—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
- H10K30/352—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles the inorganic nanostructures being nanotubes or nanowires, e.g. CdTe nanotubes in P3HT polymer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Composite Materials (AREA)
- Materials Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a perovskite hybrid solar cell based on a cadmium sulfide nanoarray. The perovskite hybrid solar cell comprises a substrate, a transparent metal electrode layer, an inorganic electron transport layer, a photosensitive layer, a hole transport layer and a metal electrode layer; the transparent metal electrode layer, the inorganic electron transport layer, the photosensitive layer, the hole transport layer and the metal electrode layer are orderly arranged on the substrate from bottom to top; the inorganic electron transport layer is formed from the cadmium sulfide nanoarray; the form of the cadmium sulfide nanoarray is nanorod, nanowire or nanotube. The perovskite hybrid solar cell is characterized in that the cadmium sulfide nanoarray is taken as the electron transport layer material instead of high-temperature sintered metal oxides widely used at present, and has relatively small band gap width and is relatively wide in an absorption spectrum to sunlight; the interface area of the electron transport layer material and the material of the photosensitive layer is increased and a continuous electron transport channel is provided; compared with high temperature sintering, the perovskite hybrid solar cell has the advantages of low cost, low energy consumption and easily realizable large-area preparation.
Description
Technical field
The present invention relates to a kind of solar cell, specifically relate to a kind of perovskite hydridization solar cell based on cadmium sulfide nano array.
Background technology
Solar cell can be by being extensively easy to get, free of contamination solar energy changes electric energy into, is that academia and industrial circle are paid close attention to and the focus of research.Inorganic solar cell is the most ripe kind of development in current all solar cells, has relatively high electricity conversion, but high energy consumption and pollution in manufacturing process, improve on the one hand the cost of battery product, brought extra pressure also on the other hand environment and society.
And current used electric transmission layer material is confined to metal oxide, comprise TiO
2, ZnO, ZrO
2.These materials are all the inorganic semiconductors of broad-band gap, and the cut-off band edge of its absorption spectrum is all less than 400nm, can not absorb the above visible solar energy of 400nm wavelength.In addition on the one hand, above-mentioned metal oxide generally need to be through high temperature sintering to ensure crystallinity that it is good and good electron transport ability, but the technical process of high temperature sintering has deviated from the original intention of the solar cell of solution processable undoubtedly.
The solar cell of solution processable, can realize clean, efficient, large-scale mass production by roll-to-roll technology, is one of direction of solar cell future development.The research of the photoelectric conversion efficiency of representational solution processable solar cell (as dye-sensitized cell, organic (polymer) battery, hybrid inorganic-organic battery, quantum dot sensitized battery etc.) is in fast development.
In the end of the year 2012, the photoelectric conversion efficiency of all solid state organic photovoltaic cell of research report hydridization perovskite solar cell reaches 9.7%.The basic structure of hydridization perovskite solar cell is ITO (FTO) glass/TiO
2(or ZnO, ZrO
2) layer/calcium titanium ore bed/spiro-MeOTAD/ metal electrode layer.Wherein TiO
2(or ZnO, ZrO
2) layer as electron transfer layer collect calcium titanium ore bed (photosensitive layer) be subject to the free electron producing after illumination.In theory, it is more abundant that solar cell absorbs sunlight, is more conducive to the raising of its photoelectric conversion efficiency.
Summary of the invention
The problem existing as electric transmission layer material in order to solve the metal oxide of background technology, the object of this invention is to provide a kind of perovskite hydridization solar cell based on cadmium sulfide nano array, substitute and need the metal oxide of high temperature sintering as electric transmission layer material using the semi-conducting material of solution processable, in hybrid inorganic-organic solar cell, each component is all conducive to improve the photoelectric conversion efficiency of battery to the absorption of sunlight, widens the absorption spectrum of electric transmission layer material to sunlight.
The technical solution used in the present invention is:
The present invention includes substrate, transparent metal electrode layer, inorganic electronic transport layer, photosensitive layer, hole transmission layer, metal electrode layer; Be followed successively by transparent metal electrode layer, inorganic electronic transport layer, photosensitive layer, hole transmission layer and metal electrode layer from bottom to top from substrate; Inorganic electronic transport layer is cadmium sulfide nano array.
The form of described cadmium sulfide nano array is nanometer rods, nano wire or nanotube, and it is highly 50-1000nm.
The material of described substrate is glass or quartz.
The material of described transparent metal electrode layer is that tin indium oxide, fluorine are mixed tin oxide.
The chemical structure of general formula of described photosensitive layer is CH
3nH
3pbI
3-xbr
xor CH
3nH
3pbI
3-xcl
x, wherein 0≤x≤3.
Described hole transmission layer is by 2,2', 7,7'-tetra-[N, N-bis-(4-methoxyphenyl) amino]-9, and the mixture of 9'-spiral shell two fluorenes, two (trimethyl fluoride sulfonyl) lithiums and 4-tert .-butylpyridine composition, thickness is 30-500nm.
The material of described metal electrode layer is that silver, aluminium, magnesium, copper, gold, tin indium oxide or fluorine are mixed tin oxide, and thickness is 10-300nm.
The invention has the beneficial effects as follows:
Hybrid inorganic-organic solar cell of the present invention, substitutes now widely used high temperature sintering metal oxide using cadmium sulfide nano array as electric transmission layer material.
Cadmium sulfide itself has good electron transport ability, can be used as electric transmission layer material.Importantly, the cadmium sulfide that the present invention selects has narrower band gap width (2.4eV), can absorb the solar radiation below 520nm, and its absorption spectrum to sunlight is wider than TiO
2, ZnO, ZrO
2;
The use of nano array structure simultaneously, nanostructure has increased the interfacial area of electric transmission layer material and photosensitive layer storeroom on the one hand, array structure provides continuous electron propagation ducts on the other hand, the two is all conducive to battery and is subject to after illumination, free electron to the transmission of electrode be collected.
The present invention using the semi-conducting material of solution processable substitute need the metal oxide of high temperature sintering as electric transmission layer material for easy technique, reduce costs and realize large area preparation and have positive meaning.
Brief description of the drawings
Fig. 1 is structural representation of the present invention.
Fig. 2 is the absorption spectrum of CdS nano-array.
Fig. 3 is the pattern photo that can be used as in the present invention the CdS nano-array of electron transfer layer.
Fig. 4 is the current-voltage curve of perovskite hydridization solar cell of the present invention.
Embodiment
Below in conjunction with drawings and Examples, the invention will be further described.
As shown in Figure 1, the present invention includes substrate 1, transparent metal electrode layer 2, inorganic electronic transmitting layer 3, photosensitive layer 4, hole transmission layer 5, metal electrode layer 6; Be followed successively by transparent metal electrode layer 2, inorganic electronic transmitting layer 3, photosensitive layer 4, hole transmission layer 5 and metal electrode layer 6 from bottom to top from substrate 1; Inorganic electronic transmitting layer 3 is cadmium sulfide nano array.
The form of preferred cadmium sulfide nano array can be nanometer rods, nano wire or nanotube, and it is highly 50-1000nm.
The material of preferred substrate 1 is glass or quartz.
The material of preferred transparent metal electrode layer 2 is that tin indium oxide (ITO), fluorine are mixed tin oxide (FTO).
The chemical structure of general formula of preferred photosensitive layer 4 is CH
3nH
3pbI
3-xbr
xor CH
3nH
3pbI
3-xcl
x, 0≤x≤3.
Preferred hole transmission layer 5 is by 2,2', 7,7'-tetra-[N, N-bis-(4-methoxyphenyl) amino]-9, the mixture of 9'-spiral shell two fluorenes (spiro-MeOTAD), two (trimethyl fluoride sulfonyl) lithium (Li-TFSI) and 4-tert .-butylpyridine (TBP) composition, thickness is 30-500nm.
The material of preferred metal electrode layer 6 is that silver, aluminium, magnesium, copper, gold, tin indium oxide or fluorine are mixed tin oxide, and thickness is 10-300nm.
Preferred 2,2', 7,7'-, tetra-[N, N-bis-(4-methoxyphenyl) amino]-9, mole proportioning of 9'-spiral shell two fluorenes (spiro-MeOTAD), two (trimethyl fluoride sulfonyl) lithium (Li-TFSI) and 4-tert .-butylpyridine is 2.5:1:3.
Embodiments of the invention are as follows:
Embodiment 1:
Use successively washing agent, isopropyl alcohol, ethanol, acetone supersound washing after 5 minutes the substrate of glass that is coated with tin indium oxide, with rinsed with deionized water oven dry.Adopt sol-gel process CdS nano rod growth array in substrate, array height 100nm, after ultraviolet-ozone treatment, adopts the method for solution spin coating to prepare the CH that thickness is 400nm
3nH
3pbI
3photosensitive layer, toasts 15 minutes at 100 DEG C.At CH
3nH
3pbI
3it is 30nm's that the upper method with spin coating is prepared thickness, by 2,2', 7,7'-tetra-[N, N-bis-(4-methoxyphenyl) amino]-9, the mixture that 9'-spiral shell two fluorenes (spiro-MeOTAD), two (trimethyl fluoride sulfonyl) lithium (Li-TFSI) and 4-tert .-butylpyridine (TBP) mix using mole proportioning as 2.5:1:3 is as hole transmission layer.Finally, prepare by the method for vacuum evaporation the silver electrode that 10nm is thick.As can see from Figure 3, nanometer rods is grown perpendicular to ito surface, is about 400nm, diameter 100nm.As shown in Figure 2, CdS nano-array is wider than ZnO to the absorption spectrum of sunlight.As mentioned above, obtain perovskite hydridization solar cell as shown in Figure 1, this battery efficiency is 6.8%, is better than the battery efficiency 3.1% taking wet method ZnO as electric transmission layer material under equal conditions.
Embodiment 2:
Use successively washing agent, isopropyl alcohol, ethanol, acetone supersound washing after 5 minutes the substrate of glass that is coated with fluorine and mixes tin oxide, by rinsed with deionized water and dry.Adopt the hydro thermal method CdS nano-wire array of growing in substrate, array height 1000nm, after air heat treatment, adopts the method for single source vapour deposition to prepare the CH that thickness is 500nm
3nH
3pbBr
3photosensitive layer, toasts 5 minutes at 120 DEG C.At CH
3nH
3pbBr
3it is 500nm's that the upper method with spin coating is prepared thickness, by 2,2', 7,7'-tetra-[N, N-bis-(4-methoxyphenyl) amino]-9,9'-spiral shell two fluorenes (spiro-MeOTAD), the mixture that two (trimethyl fluoride sulfonyl) lithium (Li-TFSI) and 4-tert .-butylpyridine (TBP) mix using mole proportioning as 2.5:1:3 is as hole transmission layer.Finally, the aluminium electrode that vacuum evaporation 300nm is thick.As shown in Figure 2, CdS nano-array is wider than ZrO to the absorption spectrum of sunlight
2.As mentioned above, obtain perovskite hydridization solar cell as shown in Figure 1.Battery efficiency is 5.8%, is better than under equal conditions with wet method ZrO
2for the battery efficiency (2.1%) of electric transmission layer material.
Embodiment 3:
Use successively washing agent, isopropyl alcohol, ethanol, acetone supersound washing after 10 minutes the quartz substrate that is coated with fluorine and mixes tin oxide, by rinsed with deionized water and dry.Adopt the electrochemical process CdS nano-tube array of growing in substrate, array height 500nm, after air heat treatment, adopts the method for double source vapour deposition to prepare the CH that thickness is 30nm
3nH
3pbIBr
2photosensitive layer, toasts 10 minutes at 140 DEG C.At CH
3nH
3pbIBr
2it is 400nm's that the upper method with spin coating is prepared thickness, by 2,2', 7,7'-tetra-[N, N-bis-(4-methoxyphenyl) amino]-9,9'-spiral shell two fluorenes (spiro-MeOTAD), the mixture that two (trimethyl fluoride sulfonyl) lithium (Li-TFSI) and 4-tert .-butylpyridine (TBP) mix using mole proportioning as 2.5:1:3 is as hole transmission layer.Finally, prepare by the method for vacuum evaporation the magnesium electrode that 200nm is thick.As shown in Figure 2, CdS nano-array is wider than TiO to the absorption spectrum of sunlight
2.As mentioned above, obtain perovskite hydridization solar cell as shown in Figure 1.Battery efficiency is 6.3%, is better than under equal conditions with wet method TiO
2for the battery efficiency (2.8%) of electric transmission layer material.
Embodiment 4:
Use successively washing agent, isopropyl alcohol, ethanol, acetone supersound washing after 7 minutes the quartz substrate that is coated with tin indium oxide, with rinsed with deionized water oven dry.Adopt the electrochemical process CdS nano-tube array of growing in substrate, array height 250nm, after ultraviolet-ozone treatment, adopts the method for solution spin coating to prepare the CH that thickness is 400nm
3nH
3pbI
2br photosensitive layer, toasts 5 minutes at 110 DEG C.At CH
3nH
3pbI
2it is 300nm's that the upper method with spin coating of Br is prepared thickness, by 2,2', 7,7'-tetra-[N, N-bis-(4-methoxyphenyl) amino]-9,9'-spiral shell two fluorenes (spiro-MeOTAD), the mixture that two (trimethyl fluoride sulfonyl) lithium (Li-TFSI) and 4-tert .-butylpyridine (TBP) mix using mole proportioning as 2.5:1:3 is as hole transmission layer.Finally, the thick copper electrode of sputter 100nm.As shown in Figure 2, CdS nano-array is wider than TiO to the absorption spectrum of sunlight
2.As mentioned above, obtain perovskite hydridization solar cell as shown in Figure 1.Battery efficiency is 5.3%, is better than under equal conditions with wet method TiO
2for the battery efficiency (2.3%) of electric transmission layer material.
Embodiment 5:
Use successively washing agent, isopropyl alcohol, ethanol, acetone supersound washing after 7 minutes the quartz substrate that is coated with tin indium oxide, with rinsed with deionized water oven dry.Adopt the hydro thermal method CdS nano-tube array of growing in substrate, array height 50nm, after ultraviolet-ozone treatment, adopts the method for solution spin coating to prepare the CH that thickness is 200nm
3nH
3pbICl
2photosensitive layer, toasts 5 minutes at 110 DEG C.At CH
3nH
3pbICl
2it is 300nm's that the upper method with spin coating is prepared thickness, by 2,2', 7,7'-tetra-[N, N-bis-(4-methoxyphenyl) amino]-9,9'-spiral shell two fluorenes (spiro-MeOTAD), the mixture that two (trimethyl fluoride sulfonyl) lithium (Li-TFSI) and 4-tert .-butylpyridine (TBP) mix using mole proportioning as 2.5:1:3 is as hole transmission layer.Finally, prepare successively by the method for vacuum evaporation the gold electrode that 50nm is thick.As shown in Figure 2, CdS nano-array is wider than ZnO to the absorption spectrum of sunlight.As mentioned above, obtain perovskite hydridization solar cell as shown in Figure 1.Battery efficiency is 6.0%, is better than the battery efficiency (3.5%) taking wet method ZnO as electric transmission layer material under equal conditions.
Embodiment 6:
Use successively washing agent, isopropyl alcohol, ethanol, acetone supersound washing after 7 minutes the quartz substrate that is coated with tin indium oxide, with rinsed with deionized water oven dry.Adopt the sol-gel process CdS nano-wire array of growing in substrate, array height 800nm, after ultraviolet-ozone treatment, adopts the method for solution spin coating to prepare the CH that thickness is 400nm
3nH
3pbI
2cl photosensitive layer, toasts 8 minutes at 110 DEG C.At CH
3nH
3pbI
2it is 200nm's that the upper method with spin coating of Cl is prepared thickness, by 2,2', 7,7'-tetra-[N, N-bis-(4-methoxyphenyl) amino]-9,9'-spiral shell two fluorenes (spiro-MeOTAD), the mixture that two (trimethyl fluoride sulfonyl) lithium (Li-TFSI) and 4-tert .-butylpyridine (TBP) mix using mole proportioning as 2.5:1:3 is as hole transmission layer.Finally, the thick indium-tin oxide electrode of sputter 20nm.As shown in Figure 2, CdS nano-array is wider than ZrO to the absorption spectrum of sunlight
2.As mentioned above, obtain perovskite hydridization solar cell as shown in Figure 1.Battery efficiency is 5.9%, is better than under equal conditions with wet method ZrO
2for the battery efficiency (2.8%) of electric transmission layer material.
Embodiment 7:
Use successively washing agent, isopropyl alcohol, ethanol, acetone supersound washing after 15 minutes the quartz substrate that is coated with tin indium oxide, with rinsed with deionized water oven dry.Adopt hydro thermal method CdS nano rod growth array in substrate, array height 600nm, after ultraviolet-ozone treatment, adopts the method for solution spin coating to prepare the CH that thickness is 200nm
3nH
3pbCl
3photosensitive layer, toasts 8 minutes at 110 DEG C.At CH
3nH
3pbCl
3it is 200nm's that the upper method with spin coating is prepared thickness, by 2,2', 7,7'-tetra-[N, N-bis-(4-methoxyphenyl) amino]-9,9'-spiral shell two fluorenes (spiro-MeOTAD), the mixture that two (trimethyl fluoride sulfonyl) lithium (Li-TFSI) and 4-tert .-butylpyridine (TBP) mix using mole proportioning as 2.5:1:3 is as hole transmission layer.Finally, the fluorine that sputter 150nm is thick is mixed tin oxide electrode.As shown in Figure 2, CdS nano-array is wider than TiO to the absorption spectrum of sunlight
2.As mentioned above, obtain perovskite hydridization solar cell as shown in Figure 1.Battery efficiency is 4.3%, is better than under equal conditions with wet method TiO
2for the battery efficiency (1.8%) of electric transmission layer material.
Claims (7)
1. the perovskite hydridization solar cell based on cadmium sulfide nano array, is characterized in that: comprise substrate (1), transparent metal electrode layer (2), inorganic electronic transport layer (3), photosensitive layer (4), hole transmission layer (5), metal electrode layer (6); Be followed successively by transparent metal electrode layer (2), inorganic electronic transport layer (3), photosensitive layer (4), hole transmission layer (5) and metal electrode layer (6) from bottom to top from substrate (1); Inorganic electronic transport layer (3) is cadmium sulfide nano array.
2. a kind of perovskite hydridization solar cell based on cadmium sulfide nano array according to claim 1, is characterized in that: the form of described cadmium sulfide nano array is nanometer rods, nano wire or nanotube, and it is highly 50-1000nm.
3. a kind of perovskite hydridization solar cell based on cadmium sulfide nano array according to claim 1, is characterized in that: the material of described substrate (1) is glass or quartz.
4. a kind of perovskite hydridization solar cell based on cadmium sulfide nano array according to claim 1, is characterized in that: the material of described transparent metal electrode layer (2) is that tin indium oxide, fluorine are mixed tin oxide.
5. a kind of perovskite hydridization solar cell based on cadmium sulfide nano array according to claim 1, is characterized in that: the chemical structure of general formula of described photosensitive layer (4) is CH
3nH
3pbI
3 xbr
xor CH
3nH
3pbI
3 xcl
x, wherein 0≤x≤3.
6. a kind of perovskite hydridization solar cell based on cadmium sulfide nano array according to claim 1, it is characterized in that: described hole transmission layer (5) is by 2,2', 7,7'-tetra-[N, N-bis-(4-methoxyphenyl) amino]-9, the mixture of 9'-spiral shell two fluorenes, two (trimethyl fluoride sulfonyl) lithiums and 4-tert .-butylpyridine composition, thickness is 30-500nm.
7. a kind of perovskite hydridization solar cell based on cadmium sulfide nano array according to claim 1, it is characterized in that: the material of described metal electrode layer (6) is mixed tin oxide for silver, aluminium, magnesium, copper, gold, tin indium oxide or fluorine, and thickness is 10-300nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410289152.8A CN104037324A (en) | 2014-06-24 | 2014-06-24 | Perovskite hybrid solar cell based on cadmium sulfide nanoarray |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410289152.8A CN104037324A (en) | 2014-06-24 | 2014-06-24 | Perovskite hybrid solar cell based on cadmium sulfide nanoarray |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104037324A true CN104037324A (en) | 2014-09-10 |
Family
ID=51468018
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410289152.8A Pending CN104037324A (en) | 2014-06-24 | 2014-06-24 | Perovskite hybrid solar cell based on cadmium sulfide nanoarray |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104037324A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105047826A (en) * | 2015-08-12 | 2015-11-11 | 武汉鑫神光电科技有限公司 | Perovskite solar cell with cadmium sulfide-doped perovskite layer and preparation method of perovskite solar cell |
| CN106025072A (en) * | 2016-06-01 | 2016-10-12 | 中物院成都科学技术发展中心 | Zn<1-x>Cd<x>S solid solution thin film based perovskite solar cell and preparation method therefor |
| CN106848068A (en) * | 2017-02-21 | 2017-06-13 | 华侨大学 | A kind of preparation method of low temperature perovskite solar cell |
| CN107039547A (en) * | 2017-04-07 | 2017-08-11 | 华中科技大学 | Perovskite solar cell ultracapacitor integrated device and preparation method thereof |
| CN107819053A (en) * | 2017-11-06 | 2018-03-20 | 南京工业大学 | Preparation method of printable cadmium sulfide nanocrystalline thin film applied to solar cell |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070111368A1 (en) * | 2005-11-16 | 2007-05-17 | Sharp Laboratories Of America, Inc. | Photovoltaic structure with a conductive nanowire array electrode |
| WO2008060697A2 (en) * | 2006-05-23 | 2008-05-22 | The University Of Akron | Dendron-tethered and templated quantum dots on carbon nanotubes |
| WO2011005462A1 (en) * | 2009-06-21 | 2011-01-13 | The Regents Of The University Of California | Nanostructure, photovoltaic device, and method of fabrication thereof |
| CN103700769A (en) * | 2013-12-03 | 2014-04-02 | 常州大学 | Organic/inorganic hybridized perovskite solar battery and preparation method thereof |
-
2014
- 2014-06-24 CN CN201410289152.8A patent/CN104037324A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070111368A1 (en) * | 2005-11-16 | 2007-05-17 | Sharp Laboratories Of America, Inc. | Photovoltaic structure with a conductive nanowire array electrode |
| WO2008060697A2 (en) * | 2006-05-23 | 2008-05-22 | The University Of Akron | Dendron-tethered and templated quantum dots on carbon nanotubes |
| WO2011005462A1 (en) * | 2009-06-21 | 2011-01-13 | The Regents Of The University Of California | Nanostructure, photovoltaic device, and method of fabrication thereof |
| CN103700769A (en) * | 2013-12-03 | 2014-04-02 | 常州大学 | Organic/inorganic hybridized perovskite solar battery and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| XIAOXIA JIANG: "template-free synthesis of vertically aligned CdS nanorods and its application in hybrid solar cells", 《SOLAR ENERGY MATERIALS & SOLAR CELLS》 * |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105047826A (en) * | 2015-08-12 | 2015-11-11 | 武汉鑫神光电科技有限公司 | Perovskite solar cell with cadmium sulfide-doped perovskite layer and preparation method of perovskite solar cell |
| CN105047826B (en) * | 2015-08-12 | 2017-12-15 | 武汉鑫神光电科技有限公司 | A kind of perovskite solar cell that cadmium sulfide is mixed in calcium titanium ore bed and preparation method thereof |
| CN106025072A (en) * | 2016-06-01 | 2016-10-12 | 中物院成都科学技术发展中心 | Zn<1-x>Cd<x>S solid solution thin film based perovskite solar cell and preparation method therefor |
| CN106025072B (en) * | 2016-06-01 | 2018-03-20 | 中物院成都科学技术发展中心 | Based on Zn1‑xCdxPerovskite solar cell of S solid solution films and preparation method thereof |
| CN106848068A (en) * | 2017-02-21 | 2017-06-13 | 华侨大学 | A kind of preparation method of low temperature perovskite solar cell |
| CN107039547A (en) * | 2017-04-07 | 2017-08-11 | 华中科技大学 | Perovskite solar cell ultracapacitor integrated device and preparation method thereof |
| CN107819053A (en) * | 2017-11-06 | 2018-03-20 | 南京工业大学 | Preparation method of printable cadmium sulfide nanocrystalline thin film applied to solar cell |
| CN107819053B (en) * | 2017-11-06 | 2019-06-14 | 南京工业大学 | Preparation method of printable cadmium sulfide nanocrystalline thin film applied to solar cell |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Ikpesu et al. | Synthesis of improved dye-sensitized solar cell for renewable energy power generation | |
| Zhao et al. | In situ fabrication of 2D SnS 2 nanosheets as a new electron transport layer for perovskite solar cells | |
| Ye et al. | Recent advances in quantum dot-sensitized solar cells: insights into photoanodes, sensitizers, electrolytes and counter electrodes | |
| Chen et al. | Novel Self-Powered Photodetector with Binary Photoswitching Based on SnS x/TiO2 Heterojunctions | |
| Li | Nanomaterials for sustainable energy | |
| CN105244445B (en) | A kind of preparation method of hybrid heterojunctions solar cell | |
| Liu et al. | Recent progress in developing monolithic perovskite/Si tandem solar cells | |
| CN104576788B (en) | Enhanced Graphene/cadmium-Te solar battery of a kind of cadmium selenide and preparation method thereof | |
| CN104091889A (en) | Semi-conductor perovskite solar cell and preparing method thereof | |
| CN105336862A (en) | Integrated stack double-junction perovskite solar cell and preparation method thereof | |
| CN104409642A (en) | Preparation method of perovskite/P-type quantum dot composite solar cell | |
| CN104037324A (en) | Perovskite hybrid solar cell based on cadmium sulfide nanoarray | |
| Wang et al. | High-performance ZnO nanosheets/nanocrystalline aggregates composite photoanode film in dye-sensitized solar cells | |
| Ju et al. | Graphene/silicon Schottky solar cells: Technical strategies for performance optimization | |
| CN102280588A (en) | Silicon-based nuclear shell nanowire photovoltaic cell and preparation process thereof | |
| CN102637755A (en) | Nanometer structure copper zinc tin sulfide (CZTS) film photovoltaic cell and preparation method of nanometer structure CZTS film photovoltaic cell | |
| CN102569480A (en) | Cuprous oxide-based PIN-junction solar battery of nano structure and preparation method thereof | |
| CN105280818B (en) | A kind of planar heterojunction perovskite solar cell of stabilization and preparation method thereof | |
| Lin et al. | Progress and Perspectives of Solar Cells: A Critical Review | |
| CN105304819A (en) | Solar cell containing perovskite material and preparation method thereof | |
| Wang et al. | Self-powered UV photodetector of TiO2 with BaTiO3 surface modification and light-controlled logic circuits application | |
| CN107706248A (en) | A kind of silicon nanostructure heterojunction solar battery and preparation method thereof | |
| CN101257094A (en) | Silicon nanometer wire solar cell apparatus | |
| Ren et al. | A new type of core-shell nanowire array structured quantum dot-composite perovskite solar cell with near full-spectrum absorption | |
| CN101262019B (en) | Photoelectrical chemical solar battery for silicon nano line |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20140910 |
|
| WD01 | Invention patent application deemed withdrawn after publication |