CN105206662A - Channel structure in semiconductor device - Google Patents
Channel structure in semiconductor device Download PDFInfo
- Publication number
- CN105206662A CN105206662A CN201510546242.5A CN201510546242A CN105206662A CN 105206662 A CN105206662 A CN 105206662A CN 201510546242 A CN201510546242 A CN 201510546242A CN 105206662 A CN105206662 A CN 105206662A
- Authority
- CN
- China
- Prior art keywords
- channel structure
- semiconductor device
- raceway groove
- umbilicate type
- depth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- 229910004129 HfSiO Inorganic materials 0.000 claims description 3
- -1 HfSiON Inorganic materials 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 239000002210 silicon-based material Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
The invention belongs to the semiconductor manufacturing field and discloses a channel structure in a semiconductor device. The channel structure comprises a semiconductor substrate; recessed type channels of a preset depth are additionally formed in the semiconductor substrate; and gate structures are arranged above the recessed type channels. According to the channel structure of the invention, the depth of the channels is increased, and therefore, current leakage can be decreased, and low power consumption can be realized.
Description
Technical field
The invention belongs to technical field of manufacturing semiconductors, relate to the channel structure in a kind of semiconductor device.
Background technology
At present, along with the development of technology of Internet of things, application and the terminal of Internet of Things get more and more, and the information that the application of Internet of Things and terminal provide is also more and more abundanter.Along with the development of Internet of Things, the characteristic of Internet of Things proposes higher requirement to manufacturing technology, along with the continuous increase of semiconductor chip integrated level, chip often needs integrated high performance device and low energy-consumption electronic device simultaneously, to improve the performance of chip.
While dimensions of semiconductor devices constantly reduces, the channel length of MOS transistor is also in continuous shortening, and when the channel length of MOS transistor becomes very in short-term, short-channel effect can make semiconductor chip performance degradation, even cannot normally work.As shown in Figure 1, Fig. 1 is the schematic diagram of channel structure in existing semiconductor device, and in figure, 1 is existing length of effective channel.
For solve with channel length reduce and the problem that increases of leakage current, those skilled in the art need the channel structure provided in a kind of semiconductor device badly, by changing channel structure, thus can reduce leakage current, realizing low-power consumption.
Summary of the invention
Technical problem to be solved by this invention is to provide the channel structure in a kind of semiconductor device, by changing channel structure, thus can reduce leakage current, realizing low-power consumption.
In order to solve the problems of the technologies described above, the invention provides the channel structure in a kind of semiconductor device, comprising Semiconductor substrate, be formed with the umbilicate type raceway groove of predetermined depth in described Semiconductor substrate, the top of described umbilicate type raceway groove is provided with grid structure.
Preferably, the depth bounds of described umbilicate type raceway groove is 5nm ~ 200nm.
Preferably, in described umbilicate type raceway groove, there is insulating thin layer.
Preferably, described insulating thin layer is SiO
2, HfO
2, HfSiO, HfSiON, SiON or Al
2o
3one wherein.
Preferably, the polycrystalline silicon material of doping is filled with in described umbilicate type raceway groove.
Preferably, the both sides of described raceway groove have source electrode and drain electrode.
Preferably, the degree of depth of described umbilicate type raceway groove is greater than the doping depth of described source electrode and drain electrode.
Preferably, described Semiconductor substrate is monocrystalline silicon, polysilicon or isolate supports.
Compared with existing scheme, the invention provides the channel structure in a kind of semiconductor device, by increasing the degree of depth of raceway groove, reaching the object reducing electric leakage, realizing low-power consumption.
Accompanying drawing explanation
In order to be illustrated more clearly in the technical scheme in the embodiment of the present invention, be briefly described to the accompanying drawing used required in embodiment below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the schematic diagram of the channel structure in existing semiconductor device;
Fig. 2 is the schematic diagram of the channel structure in the present invention in semiconductor device.
Reference numeral is:
1, umbilicate type raceway groove; 2, Semiconductor substrate; 3, grid structure; 4, insulating thin layer; 5, source electrode; 6, drain.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, embodiments of the present invention are described in further detail.Those skilled in the art the content disclosed by this specification can understand other advantages of the present invention and effect easily.The present invention can also be implemented or be applied by embodiments different in addition, and the every details in this specification also can based on different viewpoints and application, carries out various modification or change not deviating under spirit of the present invention.
Above-mentioned and other technical characteristic and beneficial effect, by conjunction with the embodiments and accompanying drawing 2 channel structure in semiconductor device of the present invention is described in detail.Fig. 2 is the schematic diagram of the channel structure in the present invention in semiconductor device.
As shown in Figure 2, the invention provides the channel structure in a kind of semiconductor device, comprise Semiconductor substrate 2, be formed with the umbilicate type raceway groove 1 of predetermined depth in Semiconductor substrate 2, the top of umbilicate type raceway groove 1 is provided with grid structure 3.
Concrete, the present invention is by changing the structure of raceway groove, reach and reduce electric leakage object, compared with prior art, the degree of depth of raceway groove has had obvious increase, the depth bounds of the umbilicate type raceway groove 1 in the present embodiment is preferably 5nm ~ 200nm, and the degree of depth of umbilicate type raceway groove 1 is preferably greater than the doping depth being positioned at both sides source electrode 5 and drain electrode 6.
Have insulating thin layer 4 in umbilicate type raceway groove 1 in the present embodiment, the material of insulating thin layer 4 is SiO
2, HfO
2, HfSiO, HfSiON, SiON or Al
2o
3one wherein, is filled with polycrystalline silicon material or the other materials of doping in umbilicate type raceway groove 1.
In addition, Semiconductor substrate 2 is preferably monocrystalline silicon, polysilicon or isolate supports.
In sum, the invention provides the channel structure in a kind of semiconductor device, by increasing the degree of depth of raceway groove, reaching the object reducing electric leakage, realizing low-power consumption.
Above-mentioned explanation illustrate and describes some preferred embodiments of the present invention, but as previously mentioned, be to be understood that the present invention is not limited to the form disclosed by this paper, should not regard the eliminating to other embodiments as, and can be used for other combinations various, amendment and environment, and can in invention contemplated scope described herein, changed by the technology of above-mentioned instruction or association area or knowledge.And the change that those skilled in the art carry out and change do not depart from the spirit and scope of the present invention, then all should in the protection range of claims of the present invention.
Claims (8)
1. the channel structure in semiconductor device, is characterized in that, comprises Semiconductor substrate, is formed with the umbilicate type raceway groove of predetermined depth in described Semiconductor substrate, and the top of described umbilicate type raceway groove is provided with grid structure.
2. the channel structure in semiconductor device according to claim 1, is characterized in that, the depth bounds of described umbilicate type raceway groove is 5nm ~ 200nm.
3. the channel structure in semiconductor device according to claim 1, is characterized in that, has insulating thin layer in described umbilicate type raceway groove.
4. the channel structure in semiconductor device according to claim 1, is characterized in that, described insulating thin layer is SiO
2, HfO
2, HfSiO, HfSiON, SiON or Al
2o
3one wherein.
5. the channel structure in semiconductor device according to claim 1, is characterized in that, is filled with the polycrystalline silicon material of doping in described umbilicate type raceway groove.
6. the channel structure in semiconductor device according to claim 1, is characterized in that, the both sides of described raceway groove have source electrode and drain electrode.
7. the channel structure in semiconductor device according to claim 6, is characterized in that, the degree of depth of described umbilicate type raceway groove is greater than the doping depth of described source electrode and drain electrode.
8. the channel structure in semiconductor device according to claim 1, is characterized in that, described Semiconductor substrate is monocrystalline silicon, polysilicon or isolate supports.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510546242.5A CN105206662A (en) | 2015-08-31 | 2015-08-31 | Channel structure in semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510546242.5A CN105206662A (en) | 2015-08-31 | 2015-08-31 | Channel structure in semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105206662A true CN105206662A (en) | 2015-12-30 |
Family
ID=54954227
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510546242.5A Pending CN105206662A (en) | 2015-08-31 | 2015-08-31 | Channel structure in semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105206662A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030157759A1 (en) * | 2002-02-15 | 2003-08-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for forming semiconductor substrate with convex shaped active region |
| US20060060936A1 (en) * | 2004-09-14 | 2006-03-23 | Park Won-Mo | Recess gate-type semiconductor device and method of manufacturing the same |
| CN102208437A (en) * | 2010-03-30 | 2011-10-05 | 南亚科技股份有限公司 | Semiconductor device and method of making the same |
-
2015
- 2015-08-31 CN CN201510546242.5A patent/CN105206662A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030157759A1 (en) * | 2002-02-15 | 2003-08-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for forming semiconductor substrate with convex shaped active region |
| US20060060936A1 (en) * | 2004-09-14 | 2006-03-23 | Park Won-Mo | Recess gate-type semiconductor device and method of manufacturing the same |
| CN102208437A (en) * | 2010-03-30 | 2011-10-05 | 南亚科技股份有限公司 | Semiconductor device and method of making the same |
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| PB01 | Publication | ||
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| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20151230 |