CN105043423A - Position sensor - Google Patents
Position sensor Download PDFInfo
- Publication number
- CN105043423A CN105043423A CN201510441632.6A CN201510441632A CN105043423A CN 105043423 A CN105043423 A CN 105043423A CN 201510441632 A CN201510441632 A CN 201510441632A CN 105043423 A CN105043423 A CN 105043423A
- Authority
- CN
- China
- Prior art keywords
- pillar
- nano
- position transducer
- membrane electrode
- conductive substrates
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002061 nanopillar Substances 0.000 claims abstract description 54
- 239000004065 semiconductor Substances 0.000 claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 51
- 230000008859 change Effects 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 15
- 239000012528 membrane Substances 0.000 claims description 42
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 20
- 239000010408 film Substances 0.000 claims description 15
- 229960001296 zinc oxide Drugs 0.000 claims description 10
- 239000011787 zinc oxide Substances 0.000 claims description 10
- 239000010409 thin film Substances 0.000 claims description 8
- 229920000642 polymer Polymers 0.000 claims description 4
- 229910002601 GaN Inorganic materials 0.000 claims description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 3
- 239000004793 Polystyrene Substances 0.000 claims description 3
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 3
- NJSSICCENMLTKO-HRCBOCMUSA-N [(1r,2s,4r,5r)-3-hydroxy-4-(4-methylphenyl)sulfonyloxy-6,8-dioxabicyclo[3.2.1]octan-2-yl] 4-methylbenzenesulfonate Chemical compound C1=CC(C)=CC=C1S(=O)(=O)O[C@H]1C(O)[C@@H](OS(=O)(=O)C=2C=CC(C)=CC=2)[C@@H]2OC[C@H]1O2 NJSSICCENMLTKO-HRCBOCMUSA-N 0.000 claims description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 3
- -1 glycol ester Chemical class 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 229920000052 poly(p-xylylene) Polymers 0.000 claims description 3
- 229920002223 polystyrene Polymers 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 239000011701 zinc Substances 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 8
- 238000001514 detection method Methods 0.000 abstract description 5
- 239000002086 nanomaterial Substances 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 11
- 230000004044 response Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 6
- 238000003491 array Methods 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 3
- 230000005622 photoelectricity Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000003574 free electron Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 230000008447 perception Effects 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000371 poly(diallyldimethylammonium chloride) polymer Polymers 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000010189 synthetic method Methods 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
- 238000000108 ultra-filtration Methods 0.000 description 1
Landscapes
- Light Receiving Elements (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The invention discloses a position sensor which comprises an array three-dimensional semiconductor nano-pillar, a flat-plate-shaped transparent film electrode and a flat-plate-shaped conductive substrate. The end face of the top of the semiconductor nano-pillar is connected with the surface of one side of the transparent film electrode. The end face of the bottom is connected with the surface of one side of the conductive substrate. The transparent film electrode and the conductive substrate are parallel to each other. The conductive substrate is electrically connected with the transparent film electrode through an independent circuit. The independent circuit comprises a voltage and current detection unit. The independent circuit is used for measuring resistance change in the independent circuit. According to the sensor, the two-dimensional structure of a conventional semiconductor film material is changed into a three-dimensional nano-structure; the photoelectric effect of a device is significantly enhanced; the angle end of the sensor is connected with the independent circuit; constant voltage and a detection circuit are added; a detection resistor changes with the position of a light spot; and the distance from the light spot to the angle of the sensor can be measured through a current signal.
Description
Technical field
The present invention relates to photoelectrical position sensor technical field, refer to a kind of nanoarray position transducer of superhigh precision especially.
Background technology
High precision photoelectric position transducer is at modern industry, military, and has very important utilization in daily life, is orientation sensing device indispensable in intelligent system.For high-accuracy intelligent system, its measure of precision depends on feedback accuracy and the Mechanical course precision of sensor.
Position transducer (the PositionSensitiveDevice of current widespread use, PSD) be the electronic component of based semiconductor film, its principle of work utilizes lateral light electro ultrafiltration, the semiconductive thin film of light spot part produces light induced electron, electron concentration difference causes light induced electron to form detectable electric current to flowing between two electrodes, according to difference between current and then calculate the irradiation position of luminous point at sensor surface.According to the working mechanism of the position sensitive device of this widespread use of PSD, electron concentration diffusion, by the impact of the factor such as non-linear of semiconductor film material purity, uniformity coefficient and carrier moving, makes the systematic error of its precision be difficult to avoid.The PSD of world today's full accuracy can only reach several microns (5 microns), and more high-precision position sensitive device is then by more complicated and meticulous dot matrix CCD image sensor, and CMOS replaces gradually.Because CCD, CMOS have complicated dot structure, cause the area of its photosensitive-member photodiode not to be less than critical value, otherwise lose ligh-induced effect, nowadays the highest resolution of CCD, CMOS is also more than 1 micron.Under current technology, position sensing precision is also difficult to break through micron dimension.
Summary of the invention
In view of this, the object of the invention is to propose a kind of position transducer, to improve its precision.
Based on above-mentioned purpose, position transducer provided by the invention comprises the 3 D semiconductor nano-pillar of array, flat transparent membrane electrode and flat conductive substrates, the top end face of described semiconductor nano-pillar is connected with a side surface of described transparent membrane electrode, bottom end face is connected with a side surface of described conductive substrates, and described transparent membrane electrode and conductive substrates parallel to each other; Described conductive substrates is electrically connected by independent loop with transparent membrane electrode, and described independent loop comprises voltage and current detecting unit, and independent loop is for measuring the change in resistance in this independent loop.
In some embodiments of the invention, described conductive substrates is electrically connected by independent loop with the Angle Position of transparent membrane electrode.
In some embodiments of the invention, the Angle Position that described conductive substrates is adjacent with at least two of transparent membrane electrode is electrically connected respectively by independent loop, and each independent loop is respectively used to measure the change in resistance in this independent loop.
In some embodiments of the invention, described conductive substrates is electrically connected by independent loop, for measuring the change in resistance in this independent loop with an Angle Position (i.e. minor face) of transparent membrane electrode.
In some embodiments of the invention, described semiconductor nano-pillar is broadband semiconductor nano-pillar.
In some embodiments of the invention, the xsect of described nano-pillar is polygon or circle.
In some embodiments of the invention, described semiconductor nano-pillar is selected from least one in zinc-oxide nano column and gallium nitride nano-pillar.
In some embodiments of the invention, the radius 40-60 nanometer of described nano-pillar is highly 600-1000nm.
In some embodiments of the invention, the surface of described 3 D semiconductor nano-pillar is modified through oxidation polymer reducing material plated film, and described face finish material is selected from least one in diallyl dimethyl ammoniumchloride and polystyrene sulfate.
In some embodiments of the invention, described conductive substrates comprises flexible substrate and is deposited on the semiconductor oxide zinc film in this flexible substrate, and described zinc oxide semiconductor thin film is connected with the bottom end face of described nano-pillar.
In some embodiments of the invention, described flexible substrate is selected from parylene's glycol ester.
In some embodiments of the invention, described transparent membrane electrode is selected from gold electrode.
In some embodiments of the invention, described semiconductor nano-pillar is perpendicular to described transparent membrane electrode and conductive substrates.
As can be seen from above, position transducer provided by the invention has the size similar with current PSD and monolithic film membrane shape, overall membrane structure is instead of by a large amount of vertical nano column arrays, and connect voltage and current detecting unit successively respectively at two Angle Position of position transducer, form two loops, by being determined at the change in resistance in each independent loop, the more specific location information of light spot sensor surface can be known, realizing nano level optoelectronic position sensing.This position transducer make use of the device mechanism being different from PSD, CCD and CMOS completely, has increased substantially the photoelectric response performance of material.Meanwhile, utilize distinct device architecture and simple manufacturing process, making this novel nano position transducer have the superelevation position detection accuracy of 200 nanometers, is 25 times of full accuracy position sensitive device now.After optimizing, the precision of this position transducer can be promoted to 50 nanometers further.
Accompanying drawing explanation
Fig. 1 is the structural representation of the position transducer of one embodiment of the invention;
Fig. 2 is the electron scanning micrograph of the position transducer of the embodiment of the present invention,
Fig. 3 is interface schematic diagram and the equivalent circuit diagram thereof of the position transducer of the embodiment of the present invention;
Fig. 4 is that the loop resistance value of the Angle Position of the position transducer of the embodiment of the present invention calculates schematic diagram;
Fig. 5 for when light spot embodiment of the present invention position sensor surface, the resistance value schematic diagram of correspondence in angle α and loop, β place;
Fig. 6 is on the basis of Fig. 5, the schematic diagram of the position of two groups of concentric circles intersections;
Fig. 7 is that under the photoelectricity being 0.5 millimeter at radius irradiates, the electric current in the α terminal circuit of angle and luminous point shift position change;
Fig. 8 is the electric current circle of equal altitudes of the position transducer angle α of the embodiment of the present invention and the light spot surface correspondence position of angle β;
Fig. 9 is the structural representation of the position transducer of another embodiment of the present invention;
Figure 10 is the structural contrast schematic diagram of nano photoelectric position transducer.
Wherein: 1, semiconductor nano-pillar, 2, transparent membrane electrode, 3, conductive substrates.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly understand, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
Position transducer provided by the invention comprises the 3 D semiconductor nano-pillar of array, flat transparent membrane electrode and flat conductive substrates, the top end face of described semiconductor nano-pillar is connected with a side surface of described transparent membrane electrode, bottom end face is connected with a side surface of described conductive substrates, and described transparent membrane electrode and conductive substrates parallel to each other; Described conductive substrates is electrically connected by independent loop with transparent membrane electrode, and described independent loop comprises voltage and current detecting unit, and independent loop is for measuring the change in resistance in this independent loop.
See Fig. 1, it is the structural representation of the position transducer of the embodiment of the present invention.In one embodiment of the invention, described position transducer comprises the 3 D semiconductor nano-pillar 1 of array, flat transparent membrane electrode 2 and flat conductive substrates 3, the top end face of described semiconductor nano-pillar 1 is connected with a side surface of described transparent membrane electrode 2, the bottom end face of this semiconductor nano-pillar 1 is connected with a side surface of described conductive substrates 3, and described transparent membrane electrode 2 is parallel to each other with conductive substrates 3.On material, the semiconductor material that preferred light electrical characteristics are strong, more preferably, use extremely strong photoelectric novel semi-conductor, such as zinc-oxide nano column and gallium nitride nano-pillar etc., significantly can strengthen the photoelectric effect of pixel.Prepare three-dimensional semiconductor nano-pillar 1 with the end of to the synthetic method on top or processing mode from the top to bottom, as the stock of pixel, described 3 D semiconductor nano-pillar has significant amplification to light intensity.Preferably, described semiconductor nano-pillar 1 is perpendicular to described transparent membrane electrode 2 and conductive substrates 3.Further, the opposite side surface of conductive substrates 3 is connected with dielectric substrate.
See Fig. 2, it is the electron scanning micrograph of the position transducer of the embodiment of the present invention, and semiconductor nano-pillar 1 array is embedded in insulating medium, and upper and lower two ends connect thin-film transparent membrane electrode 2 and conductive substrates 3 respectively, forms sandwich structure.In one embodiment of the invention, described semiconductor nano-pillar 1 is broadband semiconductor nano-pillar.
In another embodiment of the present invention, described transparent membrane electrode 2 can be metallic transparent film or ito transparent electrode.Preferably, described transparent membrane electrode 2 is selected from gold electrode.
In one embodiment of the invention, described conductive substrates 3 comprises flexible substrate and is deposited on the semiconductor oxide zinc film in this flexible substrate, and described zinc oxide semiconductor thin film is connected with the bottom end face of described nano-pillar 1.In another embodiment of the present invention, described flexible substrate is selected from parylene's glycol ester (PET).
Further, for one-dimensional position sensor, between parallel pole (transparent membrane electrode 2 and conductive substrates 3), be connected with an independent loop; For two-dimensional position sensor, at least two Angle Position of described parallel pole (transparent membrane electrode 2 and conductive substrates 3) are connected to independent loop, described independent loop comprises voltage and current detecting unit, and each independent loop is respectively used to the prevention change measured in this independent loop.Preferably, in one embodiment of the invention, the Angle Position that described conductive substrates is adjacent with two of transparent membrane electrode is electrically connected respectively by independent loop, and each independent loop is respectively used to the prevention change measured in this independent loop.This position transducer can on lining face the position (i.e. two dimension) of luminous point, i.e. X, the light spot position in Y-direction both direction.
See Fig. 3, it is interface schematic diagram and the equivalent circuit diagram thereof of the position transducer of the embodiment of the present invention, visible, and each independent loop of this position transducer is equivalent to connection in series-parallel hybrid resistor system.In a preferred embodiment of the present invention, described flat transparent membrane electrode 2 and flat conductive substrates 3 are quadrilateral, multiple semiconductor nano-pillar 1 is distributed between transparent membrane electrode 2 and conductive substrates 3 with a matrix type regularly, form multiple row nano-pillar 1 and multirow nano-pillar 1, see Fig. 1.Further, independent loop (two independent loops) is connected respectively at adjacent two Angle Position places (angle α and angle β) of conductive substrates 3.Namely at sensor two angle α and β place, angle, a set of independent circuits of each connection, adds constant voltage, current detecting unit respectively.This current detecting unit can be reometer etc.
When light spot sensor surface, the electric current in corresponding two angle circuit can change with light spot position, and then accurate sensing luminous point is in sensor surface position.Therefore, form with resistance point the concentric circles that is the center of circle with this angle (angle α and angle β), see Fig. 4, computing the resistor value can according to formula:
Wherein, R
tit is total resistance;
R
fbe between two adjacent nano posts semiconductive thin film without the dark resistance under light conditions;
R
rit is semiconductor nano-pillar dark resistance;
R
pthe catercorner length of position transducer;
for the radian that the concentric circles being the center of circle with this angle of sensor connection independent loop cuts out mutually with sensor plane, the angle namely indicated in Fig. 4;
D
fit is the distance of two adjacent nano intercolumniations;
N refers to the n-th nano-pillar, and the distance that its range sensor connects this angle of independent loop is nd
f.
See Fig. 5, it is for when light spot embodiment of the present invention position sensor surface, the resistance value schematic diagram of correspondence in angle α and loop, β place, angle, as can be seen from the figure, and the concentric circles that it is the center of circle that substitutional resistance value is formed with α and β respectively.On the basis of Fig. 5, the position of two groups of concentric circles intersections is the particular location (SL) of light spot to position sensor surface, and namely light spot point is to the distance R of angle α and β
αand R
β, see Fig. 6.
See Fig. 7, it is that under the photoelectricity being 0.5 millimeter at radius irradiates, the electric current in the α terminal circuit of angle and luminous point shift position change.Wherein, Δ Current (nA): curent change (receive peace); Time (s): time (second).Master map is schematic diagram, and plug-in unit is actual measured value, and this position transducer can realize sensing accuracy 200 nanometer that is 0.2 micron easily as seen.
See Fig. 8, it is the electric current circle of equal altitudes of the light spot surface correspondence position of the position transducer angle α of the embodiment of the present invention and angle β, can calibration light points at the X of sensor surface, Y position.Wherein, Current (mA): electric current (person of outstanding talent's peace); X-Position (μm): X-position (micron); Y-Position (μm): Y-position (micron).
See Fig. 9, it is the structural representation of the position transducer of another embodiment of the present invention, in the present embodiment, the planar structure of the sensor in above-described embodiment is shortened wherein on one side, i.e. Y-direction, form elongated strip one-dimensional position sensor, this one-dimensional position sensor energy perception luminous point position in device surface X-direction.Whole position transducer is elongated strip, does not have plane, as linear structure, and can the position of perception luminous point in device surface X-direction.For one-dimensional position sensor, described conductive substrates is electrically connected by an independent loop with the minor face place of transparent membrane electrode, and this independent loop comprises voltage and current detecting unit, for measuring the change in resistance in this independent loop.Computing the resistor value can according to formula:
R
totalfor all-in resistance;
R
fbe between two adjacent nano posts semiconductive thin film without the dark resistance under light conditions;
R
rthat semiconductor nano-pillar is without the dark resistance under light conditions.
When light spot to nano wire by its resistance by R
r=2.5 × 10
8Ω reduces to R
r'=2 × 10
7Ω, is changed by sensor all-in resistance, just can find the nano-pillar position that light spot arrives.
See Figure 10, it is the structural contrast schematic diagram of nano photoelectric position transducer.A () is the PSD of based semiconductor film in prior art, when light spot surface, the free electron excited spreads around film, and uneven.B () is the photoelectrical position sensor based on 3-D nano, structure of the present invention, not only because of its 3 D stereo, surface area is large, increase substantially free electron and excite concentration, and the electronics excited is uniformly distributed and is bound in nano-pillar, and then increase substantially positioning precision, break through the limit of current all optical semiconductor electric position sensor.Wherein, Thin-Film: film, refers to the membrane structure of current PSD; Pillar-Arrays: columnar arrays, refers to position transducer structure of the present invention.Therefore, this position transducer effectively can control the diffusion of photo-generated carrier, improves the surface area of semiconductor material simultaneously, increases substantially photoelectric effect, and then breaks through the limit of accuracy of current photoelectrical position sensor.
In a preferred embodiment of the present invention, described semiconductor nano-pillar 1 adopts radius to be 50nm, to be highly the zinc-oxide nano column of 800nm, to improve the photoelectricity respective switch ratio of this nano-pillar 1 further.In another embodiment of the present invention, described semiconductor nano-pillar 1 adopts radius to be 45nm, to be highly the zinc-oxide nano column of 750nm.In another embodiment of the present invention, described semiconductor nano-pillar 1 adopts radius to be 50nm, to be highly the zinc-oxide nano column of 820nm.In another embodiment of the present invention, described semiconductor nano-pillar 1 adopts radius to be 55nm, to be highly the zinc-oxide nano column of 800nm.By the height of optimization 3 D semiconductor nano-pillar and the size ratio of radius (cross section), photoelectric response can be improved further.
In a preferred embodiment of the invention, described semiconductor nano-pillar 1 adopts the method that Polymer Solution revolves plating to carry out function of surface process, and then drying forms oxidation polymer reducing material plated film.
In some embodiments of the invention, at least one in described face finish material diallyl dimethyl ammoniumchloride (polydiallyldimethylammoniumchloride) and polystyrene sulfate (polystyrenesulfate), significantly can improve photoelectric response speed.
In a preferred embodiment of the present invention, Schottky barrier is formed between described transparent membrane electrode 2 and the end face of semiconductor nano-pillar 1, not only photoelectric response speed can be improved, photoelectric effect intensity, and can effective Background suppression noise, and then for improve accuracy further, strengthen the effect that its performance of sensor plays uniqueness and key.
Present invention also offers a kind of method preparing above-mentioned position transducer, comprise the following steps:
1) by inscribing from head-to-foot photoetching or electron beam, or the end of to the method for top growth, obtained three-dimensional semiconductor nano-pillar;
2) described tabular transparent membrane electrode, tabular conductive substrates are connected to respectively the two ends of nano-pillar, forming position sensor.
As can be seen here, position transducer provided by the invention has following beneficial effect:
1) two-dimensional structure of the semiconductor film material changed in the past is the photoelectric effect of 3-D nano, structure, remarkable enhance device; By connecting independent circuits at sensor angle end, additional constant voltage, testing circuit, namely the change of electrical resistance light spot position is detected, namely the distance at this angle of spot distance sensor is recorded by current signal, two-dimensional plane position can be determined for two jiaos, if irregularly shaped, then even polygonal by 3 jiaos.
2) optimize 3 D semiconductor nano material height and cross-sectional sizes ratio, improve photoelectric response further.
3) the passive photoelectric sensing of relatively current PSD amplifies again, and the present invention adopts active circuits, is directly amplified by photosignal, increases sensitivity, reduces interference, and amplifying circuit is read in simplification periphery.
4) three-dimensional nanometer material is surface-functionalized, improves device photoelectric effect and response time further.
5) Schottky barrier design, to improve photoelectric response and the sensitivity of sensor, and strengthens photoelectric properties further, effectively suppresses sensor noise.
6) active active member simplifies electronics producing process and flow process.
Therefore, position transducer provided by the invention has the size similar with current PSD and monolithic film membrane shape, overall membrane structure is instead of by a large amount of vertical nano column arrays, and connect voltage and current detecting unit successively respectively at two Angle Position of position transducer, form two loops, by being determined at the change in resistance in each independent loop, the more specific location information of light spot sensor surface can be known, realizing nano level optoelectronic position sensing.This position transducer make use of the device mechanism being different from PSD, CCD and CMOS completely, has increased substantially the photoelectric response performance of material.Meanwhile, utilize distinct device architecture and simple manufacturing process, making this novel nano position transducer have the superelevation position detection accuracy of 200 nanometers, is 25 times of full accuracy position sensitive device now.After optimizing, the precision of this position transducer can be promoted to 50 nanometers further.
Those of ordinary skill in the field are to be understood that: the discussion of above any embodiment is only exemplary, and not intended to be implies that the scope of the present disclosure (comprising claim) is limited to these examples; Under thinking of the present invention, also can combine between technical characteristic in above embodiment or different embodiment, step can realize with random order, and there are other changes many of different aspect of the present invention as above, and they do not provide in details for the sake of simplicity.Therefore, within the spirit and principles in the present invention all, any omission made, amendment, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. a position transducer, it is characterized in that, comprise the 3 D semiconductor nano-pillar of array, flat transparent membrane electrode and flat conductive substrates, the top end face of described semiconductor nano-pillar is connected with a side surface of described transparent membrane electrode, bottom end face is connected with a side surface of described conductive substrates, and described transparent membrane electrode and conductive substrates parallel to each other; Described conductive substrates is electrically connected by independent loop with transparent membrane electrode, and described independent loop comprises voltage and current detecting unit, and independent loop is for measuring the change in resistance in this independent loop.
2. position transducer according to claim 1, it is characterized in that, the Angle Position that described conductive substrates is adjacent with at least two of transparent membrane electrode is electrically connected respectively by independent loop, and each independent loop is respectively used to measure the change in resistance in this independent loop; Or
Described conductive substrates is electrically connected by independent loop with an Angle Position of transparent membrane electrode, for measuring the change in resistance in this independent loop.
3. position transducer according to claim 1, is characterized in that, the xsect of described nano-pillar is polygon or circle.
4. position transducer according to claim 1, is characterized in that, described semiconductor nano-pillar is selected from least one in zinc-oxide nano column and gallium nitride nano-pillar.
5. position transducer according to claim 4, is characterized in that, the radius 40-60 nanometer of described nano-pillar, is highly 600-1000nm.
6. position transducer according to claim 1, it is characterized in that, the surface of described 3 D semiconductor nano-pillar is modified through oxidation polymer reducing material plated film, and described face finish material is selected from least one in diallyl dimethyl ammoniumchloride and polystyrene sulfate.
7. position transducer according to claim 1, is characterized in that, described conductive substrates comprises flexible substrate and is deposited on the semiconductor oxide zinc film in this flexible substrate, and described zinc oxide semiconductor thin film is connected with the bottom end face of described nano-pillar.
8. position transducer according to claim 7, is characterized in that, described flexible substrate is selected from parylene's glycol ester.
9. position transducer according to claim 1, is characterized in that, described transparent membrane electrode is selected from gold electrode.
10. position transducer according to claim 1, is characterized in that, described semiconductor nano-pillar is perpendicular to described transparent membrane electrode and conductive substrates.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510441632.6A CN105043423B (en) | 2015-07-24 | 2015-07-24 | Position sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510441632.6A CN105043423B (en) | 2015-07-24 | 2015-07-24 | Position sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105043423A true CN105043423A (en) | 2015-11-11 |
| CN105043423B CN105043423B (en) | 2018-06-05 |
Family
ID=54450155
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510441632.6A Expired - Fee Related CN105043423B (en) | 2015-07-24 | 2015-07-24 | Position sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105043423B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106767361A (en) * | 2016-12-27 | 2017-05-31 | 陕西科技大学 | A kind of accurate measurement position and the apparatus and method of change in location |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN87100057A (en) * | 1986-01-06 | 1987-07-22 | 株式会社半导体能源研究所 | Optical-electrical converter and manufacture method thereof |
| CN201213139Y (en) * | 2007-12-25 | 2009-03-25 | 西安海晶光电科技有限公司 | Nano thin-film solar cell |
| CN102061498A (en) * | 2010-12-28 | 2011-05-18 | 东南大学 | Preparation method of injector-shaped ZnO nanostructural array for field emission |
| CN102099931A (en) * | 2008-03-24 | 2011-06-15 | 卡西欧计算机株式会社 | Photo-sensing device, photosensor, and displaydevice |
| CN102339954A (en) * | 2010-07-20 | 2012-02-01 | 海洋王照明科技股份有限公司 | Solar cell and preparation method thereof |
| WO2012024006A2 (en) * | 2010-05-21 | 2012-02-23 | Princeton University | Structures for enhancement of local electric field, light absorption, light radiation, material detection and methods for making and using of the same |
| CN104022168A (en) * | 2014-05-28 | 2014-09-03 | 上海纳米技术及应用国家工程研究中心有限公司 | Anti-aging photoelectric displacement sensor |
| US20150129743A1 (en) * | 2013-11-12 | 2015-05-14 | The Board Of Trustees Of The University Of Alabama | Pillar array photo detector |
-
2015
- 2015-07-24 CN CN201510441632.6A patent/CN105043423B/en not_active Expired - Fee Related
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN87100057A (en) * | 1986-01-06 | 1987-07-22 | 株式会社半导体能源研究所 | Optical-electrical converter and manufacture method thereof |
| CN201213139Y (en) * | 2007-12-25 | 2009-03-25 | 西安海晶光电科技有限公司 | Nano thin-film solar cell |
| CN102099931A (en) * | 2008-03-24 | 2011-06-15 | 卡西欧计算机株式会社 | Photo-sensing device, photosensor, and displaydevice |
| WO2012024006A2 (en) * | 2010-05-21 | 2012-02-23 | Princeton University | Structures for enhancement of local electric field, light absorption, light radiation, material detection and methods for making and using of the same |
| CN102339954A (en) * | 2010-07-20 | 2012-02-01 | 海洋王照明科技股份有限公司 | Solar cell and preparation method thereof |
| CN102061498A (en) * | 2010-12-28 | 2011-05-18 | 东南大学 | Preparation method of injector-shaped ZnO nanostructural array for field emission |
| US20150129743A1 (en) * | 2013-11-12 | 2015-05-14 | The Board Of Trustees Of The University Of Alabama | Pillar array photo detector |
| CN104022168A (en) * | 2014-05-28 | 2014-09-03 | 上海纳米技术及应用国家工程研究中心有限公司 | Anti-aging photoelectric displacement sensor |
Non-Patent Citations (1)
| Title |
|---|
| CHENGMING JIANG，JINHUI SONG: "An Ultrahigh-Resolution Digital Image Sensor with Pixel Size of 50 nm by Vertical Nanorod Arrays", 《ADVANCED MATERIALS》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106767361A (en) * | 2016-12-27 | 2017-05-31 | 陕西科技大学 | A kind of accurate measurement position and the apparatus and method of change in location |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105043423B (en) | 2018-06-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101353886B1 (en) | Display surface and control device combined therewith for a data processing system | |
| CN206400202U (en) | Optical module | |
| US9063187B2 (en) | Hall sensor element and method for measuring a magnetic field | |
| US20150171239A1 (en) | Method for producing a solar cell and the solar cell | |
| KR102052753B1 (en) | Range sensor and range image sensor | |
| EP3062119B1 (en) | Push-pull bridge-type magnetic sensor for high-intensity magnetic fields | |
| CN109470386A (en) | A kind of power/position touch sensor detection system and detection method | |
| KR20150007301A (en) | User interface device having transparent electrodes | |
| KR101529660B1 (en) | Photodetector using surface plasmon resonance and image senosr having thereof | |
| CN100594621C (en) | Photoelectric position detector with high sensitivity | |
| CN105043423A (en) | Position sensor | |
| CN109437089B (en) | Manufacturing process flow of micro electric field sensor with cantilever beam structure | |
| CN108431968A (en) | Photo-electric conversion element and photoelectric conversion module | |
| JP2017162739A (en) | Transparent planar device and manufacturing method of transparent planar device | |
| CN102544185A (en) | Light spot position detection sensor | |
| CN204479607U (en) | Grating group micro-machine acceleration transducer | |
| WO2009024467A1 (en) | Organically based optical position sensor | |
| CN111262531A (en) | Detection circuit, manufacturing method thereof and detection panel | |
| EP3520151B1 (en) | Layered apparatus and its manufacturing method | |
| CN111244193B (en) | Diode, detector and manufacturing method of detector | |
| KR101910712B1 (en) | Pressure sensor and method for manufacturing the same | |
| TWI837016B (en) | Organic/inorganic composite structure, manufacturing method thereof and sensing device | |
| CN100356149C (en) | Photoelectric sensor and imager probe for multi-wall carbon nano-tube bundle and metal heterojunction | |
| KR20230154690A (en) | Temperature sensor and method for manufacturing thereof | |
| CN110459632B (en) | Flexible polarized light detector based on core-shell nanowire and preparation method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180605 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |