CN105022177A - High-speed optoelectronic modulator for rectangular-ring resonant cavity based on coupling modulation - Google Patents
High-speed optoelectronic modulator for rectangular-ring resonant cavity based on coupling modulation Download PDFInfo
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- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
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Abstract
Provided is a high-speed optoelectronic modulator for a rectangular-ring resonant cavity based on coupling modulation. A closed long rectangle, in a length-width ratio of 7 to 3, is formed by a single mode optical waveguide. One vertical-strip single-mode waveguide vertically penetrates through long sides of two long rectangles. One side of the vertical-strip single-mode waveguide is a square and the other side of the vertical-strip single-mode waveguide is a short rectangle. The resonant cavity is formed by three sides of the square on one side of the single-mode optical waveguide. Three sides of a short rectangle on the other side of the single-mode optical waveguide are phase-shifting arms. The part of the vertical-strip single-mode waveguide is a reference arm. As for two vertical-strip single-mode waveguides outsides long rectangles of the single-mode waveguide, one side is an input waveguide and the other side is an output waveguide. Outside the right angle of the single-mode optical waveguide of the long rectangles, a section is etched at 45 degrees along the direction of waveguide propagation in order to form holophotes. Micro-nano grooves, parallel to the holophotes on short rectangles of the other side of the single mode optical waveguide, are etched at the positions where the single mode optical waveguide is intersected with the vertical-strip single-mode waveguide.
Description
Technical field
The present invention relates to a kind of waveguide electro-optic modulator device, particularly relate to a kind of high-efficiency compact straight-flanked ring resonator cavity electrooptical modulator structure based on coupling modulation, belong to integrated optics field.
Background technology
Electrooptic modulator utilizes the electrooptical effect of material by the modulation to light wave intensity or phase place, is the optical device of optical signal transmission, is widely used transform electrical signals at optical communication field.Along with light network technology replaces the development trend of the interconnection technique using electronics as information carrier, optical device is just towards the future development of high integration, low energy consumption.Traditional device combines with semiconductive thin film manufacturing technology by waveguide electro-optic modulator, has higher integrated level and extremely low energy consumption, is the focus of current research field.Common waveguiding optical devices is on the substrates such as Si, GaAs, InP, utilize the technology such as chemical vapor deposition or molecular beam epitaxy, the interconnection of a large amount of discrete optical device on monolithic is realized in conjunction with lithographic technique, optical interconnection system in formation sheet, significant to lifting optical communication capability, reduction loss and crosstalk.In addition, adopt light wave as signal vehicle, break through the restriction of conditional electronic transfer rate, realize communicating between the chip of high-speed high capacity and circuit back panel, the processing power of different information in further lifting tab and between system.Wherein a large amount of " electrical-optical-electricity " conversion rate is the key factor determining interconnection efficiency, therefore proposes the requirements such as high speed, large bandwidth, low-power consumption to electrooptic modulator.
The optical texture typical case of electrooptic modulator adopts Mach Zehnder interference type and ring resonance type.Mach-Zender structure is simple, be easy to integrated, is electrooptical modulator structure the most common at present.But because its modulation characteristics curve is sinusoidal pattern curve, the range of linearity is less, causes depth of modulation to be very limited.The electricity schemes such as normal employing feedforward compensation or circuit precompensation carry out phase compensation, or adopt micro-ring resonator supplementary mode to carry out optical linear compensation.These modes not only increase the preparation difficulty of device, also greatly add the size of device, cause being difficult on extensive sheet integrated.Adopt the device of micro-ring resonant principle, spatially more compact, and its modulation characteristics curve is very precipitous, particularly for micro-ring with higher q values, minimum refraction index changing just can the light output break-make of control output end, and the required energy consumption of per bit modulation is minimum.Common micro-ring resonant modulator adopts intracavity modulation method, namely by changing the equivalent refractive index in micro-ring cavity, the harmonic peak of micro-ring is drifted about, and reaches the object controlling output intensity.But because in the chamber of high q-factor resonant ring, photon lifetime is longer, limit the rising and falling time of light field amplitude within the intracavity round trip cycle, modulation band-width is declined.For the contradiction that alleviation Q value and modulation band-width restrict mutually, propose a kind of novel coupling modulation mode.Namely by an extra feedback phase displacement arm, be combined to form an asymmetrical Mach-Zender interferometer with a part for micro-ring, phase displacement arm and micro-ring carry out being coupled for twice.Arranged by length, make phase displacement arm have the characteristic of π phase shift when not having impressed voltage, light wave does not enter micro-ring and directly exports from phase displacement arm; When applying impressed voltage, light wave enters micro-ring resonator, does not now have light output.This coupling modulation method breaches and to the restriction of bandwidth, makes the modulation rate upper limit close to the free spectral range (Free spectral range, FSR) of micro-ring photon lifetime in traditional micro-ring modulator chamber.
Traditional Mach-Zehnder and micro-ring optical device often adopt the coupling scheme such as directional coupler, Y branch, multi-mode interference coupler, device is caused to occupy size because light-matter interaction distance is longer larger, cause device one-dimensional square piling up upwards simultaneously, limit integrated level.Therefore technically need a kind of footprint area less, and the compacter waveguide device that can expand at two-dimensional directional and configure.
Summary of the invention
The present invention is directed to the contradiction that traditional micro-ring modulator high q-factor and modulation band-width restrict mutually, propose a kind of straight-flanked ring resonator cavity high-speed electro-optic modulator based on coupling modulation principle.Improve the restriction of high q-factor to bandwidth, obtain the characteristics such as two-dimentional integrated level is higher, modulation energy consumption is low simultaneously.
The technical solution used in the present invention is: a kind of straight-flanked ring resonator cavity high-speed electro-optic modulator based on coupling modulation, the long rectangle that closed length breadth ratio is 7:3 is formed by monomode optical waveguide, article one, vertical bar single mode waveguide passes perpendicularly through the two long limits of long rectangle of monomode optical waveguide, the side of vertical bar single mode waveguide is square, and opposite side is short rectangle; Square three limits of monomode optical waveguide side are resonator cavity 5, and short rectangle three limits of monomode optical waveguide opposite side are phase displacement arm 4; Vertical bar single-mode waveguide sections between monomode optical waveguide is reference arm 3; In two vertical bar single mode waveguides outside the long rectangle of monomode optical waveguide, be input waveguide 1, another side is output waveguide 7; Outside the right angle of the monomode optical waveguide of long rectangle, ducting direction is that 45° angle direction is etched with tangent plane, forms completely reflecting mirror 6; Monomode optical waveguide and vertical bar single mode waveguide infall, be etched with the micro-nano groove 2 parallel with the completely reflecting mirror 6 on the short rectangle of monomode optical waveguide opposite side.
Dielectric material 8 is filled with in micro-nano groove 2; Dielectric material 8 is air or polymethylmethacrylate (PMMA) or SU-8 polymkeric substance or alundum (Al2O3) or zirconium dioxide; Described micro-nano groove 2 and each waveguiding angles are greater than the angle of total reflection of the medium interface that waveguide material and dielectric material 8 are formed.
The coupling end face 1a of input waveguide 1 is waveguide input end; The coupling end face 7a of output waveguide 7 is output port.Input end and output port reciprocity, can exchange input/output port direction.
This element manufacturing is on a kind of base material of silicon or silicon-on-insulator (Silicon on insulator, SOI) or GeSi/Si or GaAs or GaAs/AlGaAs and InP/InGaAsP semiconductor substrate materials.
Positive progressive effect of the present invention is: one, the present invention adopts coupling modulation method, Electro-optic Modulators is formed in conjunction with traditional Mach-Zehnder structure and micro-ring resonant cavity structure, not only obtain the good linearity, and breach the contradiction that single micro-ring modulator high q-factor and bandwidth restrict mutually.Two, the groove-shaped coupling mechanism based on frustrated total internal reflection principle is adopted to substitute traditional Y branch, directional coupler or multi-mode interference coupler, greatly alleviate traditional photo-coupler at one-dimensional square upwards to the restriction of length, make device efficient compact, the requirement of the aspect such as device miniaturization, two-dimentional integrated level height can be met.Three, due to point light direction (i.e. 90 ° of direction light splitting) that groove-shaped coupling mechanism is special, straight-flanked ring resonator cavity can be formed, breach traditional circular micro-ring resonant cavity to the restriction of radius-of-curvature, thus obtain the resonator cavity of small size and large free spectrum zone properties, and then obtain larger modulation band-width.
Accompanying drawing explanation
Fig. 1 is a kind of high-efficiency compact straight-flanked ring resonator cavity high-speed electro-optic modulator structural representation based on coupling modulation proposed by the invention.
Fig. 2 is the longitudinal profile schematic diagram along A-A ' direction shown in Fig. 1.
Fig. 3 is the mode of architecture signals shown in Fig. 1 figure.
Figure 4 shows that different modulating phase condition modulated device steady state frequency response performance diagram.
The phase-modulation relation curve of Fig. 5 transport property and phase displacement arm.
The coupling modulation intensity curve of Fig. 6 different modulating speed.
Fig. 7 different DC biased point and the modulation signal amplitude conditions modulated degree of depth are with frequency modulating signal variation diagram.
Device inside and input/output port optical power distribution figure under Fig. 8 time-domain finite difference simulating, verifying device ON and OFF two states.
In figure: 1 input waveguide, 1a input waveguide port, 2 micro-nano grooves, 3 reference arms, 4 phase displacement arm, 5 resonator cavitys, 6 completely reflecting mirrors, 7 output waveguides, 7a output waveguide port, 8 trench fill dielectric materials, 9 silicon-on-insulators (SOI) etch ridge waveguide, 10 ridge waveguide under-clad layer silicon dioxide layers, 11 silicon substrates.
Embodiment
By reference to the accompanying drawings and specific embodiment, the invention will be further described, but should not limit the scope of the invention with this.
A kind of high-efficiency compact straight-flanked ring resonator cavity waveguide electro-optic modulator structure based on coupling modulation of the present invention can be produced on a kind of base material of silicon, silicon-on-insulator (Silicon on insulator, SOI), GeSi/Si, GaAs, GaAs/AlGaAs and InP/InGaAsP semiconductor substrate materials.As the concrete example implemented, the modulator that the present invention is formed for the bar ridge waveguide be prepared on SOI substrate material.Continuous light wave (Continuouswave, CW) device is entered from input port 1a, electric drive mode is adopted by effects such as carrier injection or charge carrier extractions, the refractive index of phase displacement arm to be changed, thus change the phase place change of transmission light wave in phase displacement arm, and then control to be coupled into the light signal of straight-flanked ring resonator cavity and reach the break-make of output port signal, namely make the light signal that output port 7a output intensity is modulated.
Consult Fig. 1, the present invention is a kind of high-efficiency compact straight-flanked ring resonator cavity high-speed electro-optic modulator structure based on coupling modulation, comprising input waveguide 1, and micro-nano groove 2, reference arm 3, phase displacement arm 4, resonator cavity 5, completely reflecting mirror 6, output waveguide 7, trench fill dielectric material 8.Wherein the principle of work of etched micro-nano groove is all the frustrated total internal reflection phenomenons adopting light wave, namely from input waveguide enter the width of the light evanescent wave of groove and groove comparable time, a part of evanescent wave is formed penetrate light wave through groove arrives the medium interface on opposite; Another part evanescent wave forms reflecting light by Gu Si-Han Xin offset phenomena.By changing groove width or regulating the refractive index of trench fill dielectric material, the adjustable power ratio penetrating light wave and reflecting light, regulate and improve the parameters such as the modulation band-width of modulator and depth of modulation.
Input continuous light signal is by point luminous effect of micro-nano groove 2, enter reference arm and phase displacement arm respectively, the length special due to reference arm is arranged, when not having impressed voltage to change phase shift, a large amount of light wave passes through from phase displacement arm 4 and exports, and device is in ON state; When applying impressed voltage and slightly changing the phase place of light signal in phase displacement arm 4, a large amount of light wave is coupled into resonator cavity waveguide 5 by reference to arm 3, because resonator cavity has the selective resonance characteristic to specific wavelength, light signal is limited in intra resonant cavity, now do not have light signal to export from output waveguide 7, device is in OFF state.
Consult Fig. 2, the longitudinal profile schematic diagram in A-A ' direction in Fig. 1, the present invention is for soi structure single mode waveguide, but scope is not limited thereto.Wherein single mode SOI base ridge optical waveguide 9 can be obtained by the reactive ion etching method in semiconductor devices treatment process, and the under-clad layer 10 of ridge optical waveguide adopts earth silicon material, is deposited in silicon-based substrate 11.
Consult Fig. 3, in order to the working effect of this high-efficiency compact straight-flanked ring resonator cavity electrooptic modulator is described, based on the Signal transmissions illustraton of model of Fig. 1 structure, illustrate the propagation condition of light signal in Fig. 1 structure.Dashed circle frame simulates light signal through micro-nano groove 2 coupling mechanism light splitting situation.Coupling light field can be expressed as the electric field amplitude component of input and output light, wherein E
irepresent input optical electric field component, E
rrepresent reflected light electric field component, E
trepresent transmitted light electric field component.For the groove-shaped coupling mechanism of any width, reflection beam splitting coefficient ρ=| E
r|/| E
i|, transmission divide backscatter extinction logarithmic ratio τ=| E
t|/| E
i|.By law of conservation of energy, pass is ρ
2+ τ
2=1-α
c(1)
Wherein α
cfor the energy loss of coupling mechanism self.For complete outlines device dynamic perfromance, adopt a time domain discrete model, by iterative computation analog device performance.E in Fig. 3
iand E
orepresent input and output signal electric field component, E
1~ E
6be respectively the electric field component of inner couplings device port output optical signal.For first groove-shaped coupling mechanism (near input end), obtaining transmission matrix expression formula is,
Wherein t is discrete time variable, and because groove opening width is narrower, light signal passes through the time of coupling mechanism much smaller than discrete time unit, therefore can be regarded as the coupling not having to postpone.And for other light signal, understood the delay in generation time and phase place by the waveguide of certain length.We are arranged through the long waveguide time delay for L is Δ t, then have,
E
5(t)＝10
-αL/20E
3(t-Δt)e
-iθ(3)
Wherein
for the variable quantity of the phase displacement arm phase modulation that additional modulation signal causes, the electric drive mode that it adopts can present different linear relationships from impressed voltage; α is unit length waveguides loss, and its unit is dB/cm, is determined by waveguide material, structure and preparation quality; The phase place change of θ to be different wavelengths of light by length the be waveguide of L.Be n for equivalent refractive index
effwaveguide meet relational expression,
θ＝2πn
effL/λ (5)
In like manner, for second groove-shaped coupling mechanism (near output terminal) and the latter half waveguide being connected this coupling mechanism, its electric field component is respectively,
E
1(t)＝10
-3αL/20E
4(t-3Δt)e
-3iθ(7)
Adopt the waveguiding structure shown in commercialization FIMMWAVE pattern solver software simulation Fig. 1 illustration of Photon Design company of Britain, the effective refractive index n of TE basic mode
eff=3.358.Realize electric drive for convenience, choose L=6.85 μm, waveguide loss α is that 2dB/cm condition emulates.Loop iteration is also carried out in solving equation (2) ~ (7) from the t=0 moment, when t < 0, does not have optical field distribution, therefore E in device
1~ E
6amplitude be zero.According to the modulator light output characteristic of t > 0 any time obtained, can the various modulating performance parameters of emulation device.
Consult Fig. 4, illustrate coupler loss α
c=0.05 in different modulating phase place
condition modulated device steady state frequency response family curve.Can find out that, with phase modulation change, curve of output occurs obviously mobile.
Consult Fig. 5, illustrate the phase-modulation relation curve of transport property and phase displacement arm.Now ρ=τ=0.689, under this condition phase displacement arm phase place generation subtle change
get final product appreciable impact light path break-make, reduce required modulation signal voltage amplitude, thus modulation per bit institute energy requirement is reduced.
Consult Fig. 6, phase modulation
under additional sinusoidal small signal modulation voltage, can be expressed as,
Wherein
for the phase place change that direct current biasing causes, k is sinusoidal signal range value, and f is added frequency modulating signal.Select direct current biasing point region as shown in Fig. 5 condition, Fig. 6 shows the coupling modulation intensity curve of different modulating speed.
Consult Fig. 7, illustrate different DC biased point and the modulation signal amplitude conditions modulated degree of depth situation of change with frequency modulating signal.Depth of modulation (Modulation depth, MD) is the important parameter of a measurement modulator dynamic property, with the contextual definition of Output optical power P is,
Depth of modulation represents that modulator is under stable output state, the contrast of Output optical power maxima and minima, and normalization maximal value is 1, close to 1, depth of modulation more represents that its modulating performance is better.Usually corresponding frequency during depth of modulation drop by half is called modulation band-width.As shown in Figure 7, for different DC biased point under simulated conditions set before, modulation band-width is greater than 100GHz, meets the requirement of high speed electro-optical modulation completely.In addition, by the lifting of preparation technology, device size can be reduced further, obtain the straight-flanked ring resonator cavity that free spectral range is larger, increase the modulation band-width of device based on coupling modulation principle further.
Consult Fig. 8, adopt Fdtd Method (FDTD) method, simulate the optical power distribution of device inside and input/output port under device ON and OFF state respectively.The visible mudulation effect being successfully authenticated the straight-flanked ring resonator cavity electrooptic modulator based on coupling modulation of the present invention.
Claims (5)
1. the straight-flanked ring resonator cavity high-speed electro-optic modulator based on coupling modulation, it is characterized in that: form by monomode optical waveguide the long rectangle that closed length breadth ratio is 7:3, article one, vertical bar single mode waveguide passes perpendicularly through the two long limits of long rectangle of monomode optical waveguide, the side of vertical bar single mode waveguide is square, and opposite side is short rectangle; Square three limits of monomode optical waveguide side are resonator cavity (5), and short rectangle three limits of monomode optical waveguide opposite side are phase displacement arm (4); Vertical bar single-mode waveguide sections between monomode optical waveguide is reference arm (3); In two vertical bar single mode waveguides outside the long rectangle of monomode optical waveguide, be input waveguide (1), another side is output waveguide (7); Outside the right angle of the monomode optical waveguide of long rectangle, ducting direction is that 45° angle direction is etched with tangent plane, forms completely reflecting mirror (6); Monomode optical waveguide and vertical bar single mode waveguide infall, be etched with the micro-nano groove (2) parallel with the completely reflecting mirror (6) on the short rectangle of monomode optical waveguide opposite side.
2. a kind of straight-flanked ring resonator cavity high-speed electro-optic modulator based on coupling modulation according to claim 1, is characterized in that: be filled with dielectric material (8) in micro-nano groove (2); Dielectric material (8) is air or polymethylmethacrylate or SU-8 polymkeric substance or alundum (Al2O3) or zirconium dioxide.
3. a kind of straight-flanked ring resonator cavity high-speed electro-optic modulator based on coupling modulation according to claim 1, is characterized in that: described micro-nano groove (2) and each waveguiding angles are greater than the angle of total reflection of the medium interface that waveguide material and dielectric material (8) are formed.
4. a kind of straight-flanked ring resonator cavity high-speed electro-optic modulator based on coupling modulation according to claim 1, is characterized in that: the coupling end face (1a) of input waveguide (1) is waveguide input end; The coupling end face (7a) of output waveguide (7) is output port; Input end and output port reciprocity, can exchange input/output port direction.
5. a kind of straight-flanked ring resonator cavity high-speed electro-optic modulator based on coupling modulation according to claim 1, is characterized in that: this element manufacturing is on a kind of base material of silicon or silicon-on-insulator or GeSi/Si or GaAs or GaAs/AlGaAs and InP/InGaAsP semiconductor substrate materials.
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| CN106253057A (en) * | 2016-09-30 | 2016-12-21 | 青岛海信宽带多媒体技术有限公司 | A kind of Laser Devices |
| CN112985596A (en) * | 2021-01-26 | 2021-06-18 | 济南量子技术研究院 | 10.6 mu m single photon detector based on frequency up-conversion and performance test experimental device thereof |
| CN113872702A (en) * | 2021-09-26 | 2021-12-31 | 武汉光谷信息光电子创新中心有限公司 | Method, system, equipment and storage medium for controlling micro-ring wavelength |
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