CN104993023A - Method for removing growth substrate by utilizing chemical corrosion method - Google Patents
Method for removing growth substrate by utilizing chemical corrosion method Download PDFInfo
- Publication number
- CN104993023A CN104993023A CN201510290140.1A CN201510290140A CN104993023A CN 104993023 A CN104993023 A CN 104993023A CN 201510290140 A CN201510290140 A CN 201510290140A CN 104993023 A CN104993023 A CN 104993023A
- Authority
- CN
- China
- Prior art keywords
- layer
- epitaxial
- transition zone
- growth
- growth substrates
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 124
- 238000000034 method Methods 0.000 title claims abstract description 97
- 230000007797 corrosion Effects 0.000 title claims abstract description 41
- 238000005260 corrosion Methods 0.000 title claims abstract description 41
- 239000000126 substance Substances 0.000 title claims description 29
- 239000004065 semiconductor Substances 0.000 claims abstract description 58
- 150000004767 nitrides Chemical class 0.000 claims abstract description 23
- 230000007704 transition Effects 0.000 claims description 48
- 239000003153 chemical reaction reagent Substances 0.000 claims description 19
- 239000000243 solution Substances 0.000 claims description 14
- 239000011248 coating agent Substances 0.000 claims description 11
- 238000000576 coating method Methods 0.000 claims description 11
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 10
- 238000005516 engineering process Methods 0.000 claims description 9
- 229920002120 photoresistant polymer Polymers 0.000 claims description 9
- 238000000059 patterning Methods 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- 239000003989 dielectric material Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 230000000737 periodic effect Effects 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000003795 chemical substances by application Substances 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 238000000926 separation method Methods 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 2
- 239000011259 mixed solution Substances 0.000 claims description 2
- 238000012546 transfer Methods 0.000 claims description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims 4
- 238000005240 physical vapour deposition Methods 0.000 claims 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims 3
- 230000026030 halogenation Effects 0.000 claims 3
- 238000005658 halogenation reaction Methods 0.000 claims 3
- 150000003839 salts Chemical class 0.000 claims 3
- 238000000927 vapour-phase epitaxy Methods 0.000 claims 3
- 230000003628 erosive effect Effects 0.000 claims 2
- 229920000297 Rayon Polymers 0.000 claims 1
- 230000003139 buffering effect Effects 0.000 claims 1
- 238000001312 dry etching Methods 0.000 claims 1
- 238000005566 electron beam evaporation Methods 0.000 claims 1
- 238000001039 wet etching Methods 0.000 claims 1
- 239000013043 chemical agent Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 112
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 14
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 13
- 229910002601 GaN Inorganic materials 0.000 description 12
- 206010040844 Skin exfoliation Diseases 0.000 description 12
- 230000008569 process Effects 0.000 description 8
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000010992 reflux Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 230000035618 desquamation Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention provides a method for removing a growth substrate. According to the invention, by utilizing a characteristic that a semiconductor medium pattern layer between the substrate and an epitaxial layer is susceptible to wet corrosion, the semiconductor medium pattern layer is corroded first and then a cavity structure is formed between the substrate ad the epitaxial layer. Then a chemical agent capable of corroding the epitaxial buffer layer is let into the cavity structure and corrodes the epitaxial buffer layer, so that the integral removing of the growth substrate is realized. The method provided by the invention can be used for preparing a self-supported III-V group nitride substrate and can also be used for transferring a comparatively thin III-V group nitride epitaxial layer device structure to other support substrates from the growth substrate.
Description
Technical field
The present invention relates to field of semiconductor illumination, particularly relate to a kind of method utilizing the method for chemical corrosion to peel off growth substrates.
Background technology
Semiconductor lighting is as new and effective solid light source, and have the advantages such as life-span length, energy-saving and environmental protection, safety, its application expands rapidly.The core of semiconductor lighting is light-emitting diode (LED), with regard to structure, LED is the PN junction formed as semiconductors such as GaAs (GaAs), gallium phosphide (GaP), gallium arsenide phosphide (GaAsP), gallium nitride (GaN) by III-V.In order to increase the luminous efficiency of LED, the active area of a quantum well generally can be increased between the N-type layer and P-type layer of PN junction.Therefore, the means of extension that mostly utilize of LED grow in substrate successively according to the order of N-type layer, active area, P-type layer.Owing to not having cheap GaN homo-substrate, GaN base LED grows usually at Si, SiC and sapphire that (main component is Al
2o
3) substrate, wherein Sapphire Substrate is most popular growth substrates.
On a sapphire substrate after growing gan crystal material and epitaxial structure, usually need substrate desquamation.Mainly utilize laser lift-off substrate at present, laser lift-off is interface superlaser being focused on substrate and epitaxial loayer, melts epitaxial buffer layer instantaneously by laser point by point scanning, thus substrate and epitaxial loayer are peeled off.But laser lift-off exists many defects, such as, epitaxial loayer can be caused to damage, and, be also difficult to realize peeling off very uniformly.There is defects such as leaking electricity, yield is low in the device that this finally causes laser lift-off to complete.
Summary of the invention
The shortcoming of prior art in view of the above, the object of the present invention is to provide a kind of method utilizing the method for chemical corrosion to peel off growth substrates, for solving the various shortcomings in existing growth substrates stripping technology.The present invention mainly contains the application of two aspects: the III-V nitride that can be used on the one hand preparing self-supporting, detailed process is at the thicker III-V nitride epitaxial layer of the upper growth fraction of foreign substrate (namely so-called growth substrates), then method of the present invention is utilized to peel off described growth substrates, the thickness of described III-V nitride epitaxial layer exceedes the thickness that can support itself, forms the III-V nitride of self-supporting; The application of another one aspect of the present invention is the so-called support substrates that the epitaxial layer structure of thinner device can be used for transfer to from growth substrates other.Therefore, from following two aspects, content of the present invention is described.
One aspect of the present invention provides a kind of method utilizing the method for chemical corrosion to peel off growth substrates, is prepared the III-V nitride of self-supporting, at least comprise by the method for described stripping growth substrates:
1) growth substrates is provided;
2) in described growth substrates, iii-v nitride epitaxial resilient coating is deposited;
3) deposited semiconductor dielectric layer on described epitaxial buffer layer;
4) semiconductor medium layer described in patterning, namely: remove part semiconductor medium layer, make the part of removal and the partial separation arrangement of reservation, form periodicity or non-periodic pattern, the part place of simultaneously removing dielectric layer will expose the surface of described epitaxial buffer layer, gets rid of dielectric layer and the part exposing described epitaxial buffer layer is called as growth window;
5) extension transition zone deposition is carried out on the surface exposing epitaxial buffer layer in described dielectric layer pattern, the thickness of described extension transition zone is greater than the height of semiconductor medium, described extension transition zone covers semiconductor medium layer completely, and described extension transition zone has smooth upper surface;
6) on described extension transition zone, certain thickness iii-v nitride is deposited;
7) use can only the chemical reagent of corrosion resistant semiconductor dielectric material erode step 4) in the semiconductor medium graph layer be between growth substrates and extension transition zone that formed, to form empty structure between growth substrates and extension transition zone;
8) using can corrosion step 2) in the chemical reagent of epitaxial buffer layer that formed, and make such chemical reagent enter step 7) the middle empty structure formed, erode step 2) the middle epitaxial buffer layer formed, the extension transition zone of growth on growth substrates is separated with growth substrates together with having certain thickness iii-v nitride, complete the stripping of growth substrates, form the iii-v nitride of self-supporting.
The present invention provides a kind of method utilizing the method for chemical corrosion to peel off growth substrates on the other hand, by the method for described stripping growth substrates, the epitaxial structure of device is transferred to an other support substrates from growth substrates, at least comprises:
1) growth substrates is provided;
2) in described growth substrates, iii-v nitride epitaxial resilient coating is deposited;
3) deposited semiconductor dielectric layer on described epitaxial buffer layer;
4) semiconductor medium layer described in patterning, namely: remove part semiconductor medium layer, make the part of removal and the partial separation arrangement of reservation, form periodicity or non-periodic pattern, the part place of simultaneously removing dielectric layer will expose the surface of described epitaxial buffer layer, gets rid of dielectric layer and the part exposing described epitaxial buffer layer is called as growth window;
5) extension transition zone deposition is carried out on the surface exposing epitaxial buffer layer in described dielectric layer pattern, the thickness of described extension transition zone is greater than the height of semiconductor medium, described extension transition zone covers semiconductor medium layer completely, and described extension transition zone has smooth upper surface;
6) epitaxial structure of LED device of extension growing n-type epitaxial loayer, multiple quantum well light emitting layer and p-type epitaxial layer composition successively on described extension transition zone;
7) there is the substrate bonding of epitaxial structure together with growth substrates in another support substrates in described, the intimate surface of the surface of the epitaxial structure of device and described support substrates is bonded together;
8) use can only the chemical reagent of corrosion resistant semiconductor dielectric material erode step 4) in the semiconductor medium graph layer be between growth substrates and extension transition zone that formed, to form empty structure between growth substrates and extension transition zone;
9) using can corrosion step 2) in the chemical reagent of epitaxial buffer layer that formed, and make such chemical reagent enter step 8) the middle empty structure formed, erode step 2) the middle epitaxial buffer layer formed, the extension transition zone of growth on growth substrates is separated with growth substrates together with the epitaxial structure of device, complete the stripping of growth substrates, the epitaxial structure of described LED device is transferred to described support substrates.
Epitaxial structure layer in the support substrates be stripped out completes device structure fabrication processes.
As mentioned above, the invention provides a kind of method at the bottom of method peeling liner utilizing chemical corrosion, its main feature is first eroded by described dielectric layer with corrosive liquid, former dielectric layer place is made to form cavity, then the etchant solution allowing to corrode epitaxial buffer layer enters described empty structure and erodes epitaxial buffer layer, successfully growth substrates is peeled off.
Preparation method's technique of the present invention is simple, and is conducive to reducing manufacturing cost, is applicable to industrial production.
Accompanying drawing explanation
Fig. 1 ~ Fig. 2 is shown as and of the present inventionly a kind ofly utilizes the method step 1 at the bottom of method peeling liner of chemical corrosion), 2) structural representation that presents.
Fig. 3 is shown as and of the present inventionly a kind ofly utilizes the method step 3 at the bottom of method peeling liner of chemical corrosion) structural representation that presents.
Fig. 4 ~ Fig. 7 is shown as and of the present inventionly a kind ofly utilizes the method step 4 at the bottom of method peeling liner of chemical corrosion) structural representation that presents.
Fig. 8 is shown as and of the present inventionly a kind ofly utilizes the method step 5 at the bottom of method peeling liner of chemical corrosion), 6) structural representation that presents.
Fig. 9 is shown as and of the present inventionly a kind ofly utilizes the method step 7 at the bottom of method peeling liner of chemical corrosion) structural representation that presents.
Figure 10 is shown as and of the present inventionly a kind ofly utilizes the method step 8 at the bottom of method peeling liner of chemical corrosion) structural representation that presents.
Element numbers explanation
101 growth substrates
102 epitaxial buffer layers
103 semiconductor medium layers
104 photoresist layers
105 spaced photoetching agent patterns
The spaced photoetching agent pattern that 106 bands are gradient
107 spaced semiconductor medium patterns
108 epitaxial structure layers
109 cavities
110 support substrates
Embodiment
As a kind of preferred version of the method at the bottom of a kind of method peeling liner utilizing chemical corrosion of the present invention, the material of described growth substrates is Al
2o
3,also can be other semi-conducting materials, such as Si or SiC.
As a kind of a kind of preferred version utilizing the method for chemical corrosion to peel off the method for growth substrates of the present invention, thickness preferably 100 ~ 500 dusts of epitaxial buffer layer, more preferably 200 ~ 400 dusts.Cross thin epitaxial buffer layer and cannot meet nucleation requirement needed for subsequently epitaxial growing, cause outer layer growth Quality Down; Blocked up epitaxial buffer layer can cause extension recrystallization in follow-up temperature-rise period abundant not, affects the quality of epitaxial loayer; Blocked up epitaxial buffer layer also can affect the light extraction efficiency of the LED prepared on such substrate.
As a kind of preferred version of the method at the bottom of a kind of method peeling liner utilizing chemical corrosion of the present invention, epitaxial buffer layer is any amorphous or polycrystalline material of forming hexagonal symmetrical structure crystal by annealing recrystallization, is more preferably selected from: adopt the Al that MOCVD legal system is standby
xga
1-xn, 0≤X≤0.5, preferably 0≤X≤0.2, the temperature range of preparation is 450 ~ 700 DEG C, preferably 500 ~ 600 DEG C; Adopt the AlN that MOCVD legal system is standby, the temperature range of preparation is 700 ~ 1000 DEG C; Adopt AlN layer prepared by sputtering method, the crystal orientation of described AlN layer is (0001) orientation; BN; Or ZnO.The preparation method of above-mentioned epitaxial buffer layer does not repeat them here for it be known to those skilled in the art that.Because the preparation temperature of described transition zone is lower, required thickness is less, while guarantee follow-up epitaxial light emission structure (especially GaN base epitaxial light emission structure) nucleating growth, effectively can reduce production cost.Compared to low temperature AI
xga
1-xn layer, the benefit that sputtering method prepares AlN layer is that thickness controllability is strong, the crystal orientation degree of orientation is higher, is also conducive to the nucleating growth of epitaxial light emission structure (especially GaN base epitaxial light emission structure) simultaneously.
As a kind of a kind of preferred version utilizing the method for chemical corrosion to peel off the method for growth substrates of the present invention, semiconductor medium layer is SiO
2, at least one in SiONx or SiNx, can strengthen chemical vapour deposition technique (PECVD) or other film build methods are formed by using plasma, described semiconductor medium layer is more preferably SiO
2, use PECVD by SiH
4and N
2o generates under plasma reaction environment 250-350 DEG C of temperature range.
As a kind of a kind of preferred version utilizing the method for chemical corrosion to peel off the method for growth substrates of the present invention, the thickness of described semiconductor medium layer preferably 0.5 ~ 2 μm.
As a kind of a kind of preferred version utilizing the method for chemical corrosion to peel off the method for growth substrates of the present invention, described semiconductor medium layer is made up of the dielectric layer of the growth window and reservation of removing dielectric layer after patterning, and growth window forms so-called shrinkage pool.In the present invention, dielectric layer is got rid of and the part exposing described epitaxial buffer layer is called as growth window
As a kind of a kind of preferred version utilizing the method for chemical corrosion to peel off the method for growth substrates of the present invention, the shape of growth window does not limit, can be circular, also can be square or hexagon, the size of growth window preferably 0.1 to 15 microns, the spacing between growth window preferably 0.1 to 25 microns.
As a kind of a kind of preferred version utilizing the method for chemical corrosion to peel off the method for growth substrates of the present invention, the shape of growth window also can be strip structure, the width of bar shaped growth window preferably 0.1 to 15 microns, the spacing between bar shaped growth window preferably 0.1 to 25 microns.
As a kind of a kind of preferred version utilizing the method for chemical corrosion to peel off the method for growth substrates of the present invention, the described support substrates being used for bonding epitaxial structure layer can be the Cu base substrate that conduction and heat conductivility are good according to the requirement of device function, also can be other Semiconductor substrate, such as Si and GaAs substrate can also be the good ceramic substrate of heat conduction.
As a kind of a kind of preferred version utilizing the method for chemical corrosion to peel off the method for growth substrates of the present invention, described bonding technology can be the conventional bonding technology of any one in semicon industry, if need conduction according to device function, can the preferred metal bonding such as Au-Au bonding or AuSn, if do not need conduction can also select organic bond bonding.
As a kind of a kind of preferred version utilizing the method for chemical corrosion to peel off the method for growth substrates of the present invention, semiconductor medium layer is that full wafer is connected, or it is rectangular to form continuous print, therefore solution can extend into, semiconductor medium layer is all eroded, from forming empty structure between growth substrates and epitaxial loayer.
The chemical reagent that can corrode described semiconductor medium layer used in the present invention or etchant solution and etching process are known in semicon industry, do not repeat them here, such as can preferably HF solution or HF and HNO
3ratio be the mixed solution of 1:1.
The chemical reagent that can corrode described epitaxial buffer layer used in the present invention or etchant solution and etching process are all known in semicon industry, do not repeat them here, can molar concentration be preferably such as the KOH solution of 10 mol/L, corrosion temperature preferably 100 DEG C.
Embodiment
Below by way of particular specific embodiment, embodiments of the present invention are described, those skilled in the art the content disclosed by this specification can easily understand other advantages of the present invention and effect.The present invention can also be implemented or be applied by embodiments different in addition, and the every details in this specification also can based on different viewpoints and application, carries out various modification or change not deviating under spirit of the present invention.
Refer to Fig. 1 ~ Figure 10.It should be noted that, the diagram provided in the present embodiment only illustrates basic conception of the present invention in a schematic way, only show the assembly relevant with the present invention to illustrate, but not component count, shape, size, manufacture method and process window when implementing reality makes restriction, it is actual when implementing, and the kenel of each assembly, quantity and ratio can be a kind of change arbitrarily, and its assembly layout kenel also may be more complicated.Process conditions involved in an embodiment rationally can change and reach disclosed effect in valid window.
Embodiment 1
As shown in Fig. 1 ~ Figure 10, the present embodiment provides a kind of method utilizing the method for chemical corrosion to peel off growth substrates, comprises the following steps:
1, the formation of epitaxial buffer layer.As shown in Figure 1, in the present embodiment, described growth substrates 101 is commercially available flat sheet type Al
2o
3substrate, its surface orientation (0001), has the evenness of atom level, and substrate is of a size of 2 inches.In the present embodiment, use the substrate of No clean, additionally do not clean, directly use.Above-mentioned substrate is placed on the graphite pallet with SiC protective layer and sends into metal-organic chemical vapor deposition equipment method (MOCVD) reative cell; In a hydrogen atmosphere by above-mentioned silicon to 1100 DEG C, and at such a temperature keep 10 minutes; Then underlayer temperature is reduced to 550 DEG C, pass into ammonia, trimethyl aluminium (TMAl) and trimethyl gallium (TMGa) to reative cell, wherein the normal flow of ammonia is 56 liters/min, the molar flow of TMAl and TMGa is respectively 3.25 × 10 simultaneously
-5with 2.47 × 10
-4moles/min, the pressure of reative cell is 500torr, and the time of passing into is 215 seconds.As shown in Figure 2, the thickness forming AlxGa1-xN epitaxial buffer layer under these conditions in growth substrates 101 is 300 dusts, wherein x=0.2.
2, as shown in Figure 3, after completing the growth of resilient coating 102, plasma enhanced chemical vapor deposition method (PECVD) is utilized to form SiO in described resilient coating 102 surface
2layer 103, thickness is 1 micron.Temperature in PECVD reaction chamber is 350 DEG C, and pressure is 1torr (standard atmospheric pressure is 760torr), and the flow of SiH4 and N2O is respectively 10sccm (standard milliliters/minute) and 300sccm, and isoionic radio-frequency power is 30W.
3, the formation of dielectric layer geometrical pattern.As shown in Figure 4 to 7, the figure of formation is the SiO of periodic arrangement
2shrinkage pool, arrangement mode is HCP structure, and the cycle is 10 μm, SiO
2the shape of shrinkage pool is circular, and bottom width is 3 μm, and spacing is 7 μm.
Particularly, dielectric layer geometric graph patterning comprises the following steps:
A, as shown in Fig. 4 ~ Fig. 5, first, in described SiO
2layer 103 surface coating 1 μm of photoresist layer 104, by exposure technology, described photoresist layer 104 is made into the photoresist shrinkage pool 105 arranged in hexagonal closs packing mode, the hexagonal closely packed cycle is 10 μm, and the diameter of photoresist cylinder is 3 μm, and spacing is 7 μm.
B, as shown in Figure 6, then, described multiple photoresist shrinkage pool is made to reflux into the hole with constant slope by adding thermal reflux, wherein, reflux temperature 128 degrees Celsius and return time 60 seconds.
C, as shown in Figure 7, to carry out afterwards, adopt sense coupling method (ICP) that photoetching offset plate figure is transferred to described SiO
2layer 103, forms multiple SiO
2shrinkage pool, and expose each SiO
2the transition zone 102 at shrinkage pool place, for the epitaxial growth of follow-up GaN epitaxy material.The process conditions of above-mentioned ICP etching are: etching gas is CHF
3(fluoroform), its normal flow is 100 ml/min; The upper electrode power of ICP is 1000W, and lower electrode power is 50W.Cleaning condition is: use acetone, wash above-mentioned SiO
2the photoresist of surface residual, then wash above-mentioned SiO with watery hydrochloric acid
2other pollutants on surface and the transition zone surface that exposes, can be directly used in the epitaxial growth of GaN.
4, the formation of epitaxial structure layer.As shown in Figure 8, with buffer-layer surface epitaxial growth one deck extension transition zone that MOCVD device is being exposed, described extension transition zone covers the protruding and space completely between filling semiconductor medium projection of semiconductor medium completely, and described extension transition zone has smooth upper surface.Substrat structure prepared by above-mentioned steps be placed on there is SiC protective layer graphite pallet on send into metal-organic chemical vapor deposition equipment method (MOCVD) reative cell, in above-mentioned substrat structure, expose to the open air at SiO
2the buffer-layer surface at shrinkage pool place can play the effect of resilient coating, under the protection of NH3, directly reaction chamber temperature is risen to 1100 DEG C, and epitaxial growth thickness is the GaN non-doped layer transition zone of 2 microns, and NH3 flow is 25 standard liter/min, and TMGa flow is 4 × 10
-5moles/min, growth pressure is 400Torr.
After completing the growth of extension transition zone, when not interruption of growth, continued growth extension active layer on the surperficial face directly utilizing MOCVD to be grown on described extension transition zone, described extension active layer is at least containing N-shaped doped epitaxial layer, p doping type epitaxial loayer and luminescent layer, and described N-shaped epitaxial loayer, p-type epitaxial layer are positioned at the both sides of described luminescent layer.
The primary growth condition of each layer of extension active layer is as follows:
The n-type GaN layer of a, growth Si doping, NH3 flow is 25 standard liter/min, and TMGa flow is 4 × 10
-3moles/min, doping SiH4 flow is from 2 × 10
-7moles/min, the temperature of reative cell is, 1100 DEG C, and pressure is 400Torr, and n-type GaN layer thickness is 3 microns;
The N-shaped AlGaN insert layer of b, growth Si doping, growth temperature is 1050 DEG C, and growth time is 10min, and pressure is 400Torr, and thickness is 0.1 micron;
C, growth multiple quantum well layer luminescent layer: multiple quantum well layer comprises 10 quantum well structures overlapping successively, described quantum well structure is formed by InxGa1-xN (x=0.2) potential well layer and GaN barrier layer successively overlapping growth.The growth temperature of described InxGa1-xN potential well layer is 780 DEG C, and pressure is 300Torr, and thickness is 2.5nm; The growth temperature of described GaN barrier layer is between 950 DEG C, and pressure is between 400Torr, and thickness is 12nm;
The p-type AlGaN layer that d, growth Mg mix, growth temperature is 1000 DEG C, and NH3 flow is 41 standard liter/min, and TMGa flow is 1.1 × 10
-4moles/min, TMAl flow is 6.2 × 10
-5moles/min, Cp2Mg flow is 7.5 × 10
-7moles/min, chamber pressure is 500Torr, and growth thickness is 50 nanometers;
The p-type GaN layer that e, growth Mg mix: temperature is down to 950 DEG C, and TMGa flow is 1 × 10
-4moles/min, Cp2Mg flow is 4.5 × 10
-6moles/min, chamber pressure is 500Torr, and growth thickness is 600 nanometers;
The InGaN layer that f, growth Mg mix, temperature drops to 650 DEG C, and NH3 flow is 40 standard liter/min, and TEGa flow is 1.5 × 10
-5moles/min, TMIn flow is 3 × 10
-5moles/min, Cp2Mg flow is 3.2 × 10
-6moles/min, chamber pressure is 500Torr, and growth thickness is 5 nanometers;
G, annealing in process, finally cool the temperature to 800 DEG C, and N2 total flow is 80 standard liter/min, and chamber pressure is 200Torr, soak time 10 minutes.
5, after completing the growth of whole epitaxial structure, the temperature of MOCVD reative cell is dropped to room temperature, then sample is taken out from MOCVD reative cell, just can epitaxial structure be incorporated on support substrates together with growth substrates turn key, the support substrates used in this embodiment is Si (001), the bonding technology used is Au-Au bonding technology, first the bonded layer in epi-layer surface and the surperficial metal A u of evaporation 1 micron respectively of Si support substrates is needed, then both surfaces are fit together, at 280 DEG C, keep under the pressure of 5Kg just can completing bonding in 10 minutes.
6, the formation in cavity.As shown in Figure 9, with HF acid solution by clean for the corrosion of semiconductor medium layer, because semiconductor medium layer is that full wafer is connected, therefore solution can extend into, is all eroded by semiconductor medium layer, thus between epitaxial structure and growth substrates, form empty structure.
7, growth substrates is peeled off.Among the high temperature KOH etchant solution sample with empty structure recited above being put into 100 DEG C, the molar concentration of KOH is 10 mol/L, KOH solution will enter the described empty structure be between epitaxial structure and growth substrates, epitaxial buffer layer is eroded, etching time is 3 minutes, successfully realizes growing chemical stripping thoroughly.
8, the device technology at the device epitaxial structure supporting Si substrate is completed.
Embodiment 2
As shown in Fig. 1 ~ Figure 10, the present embodiment provides a kind of method at the bottom of method peeling liner utilizing chemical corrosion, and its basic step, as embodiment 1, does not exist together and is only the 2nd step: the SiO that graphical described semiconductor medium layer 103 arranges for periodic intervals
2lines, lines bottom width is 7 μm, and spacing is 3 μm.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all without prejudice under spirit of the present invention and category, can modify above-described embodiment or changes.Therefore, such as have in art usually know the knowledgeable do not depart from complete under disclosed spirit and technological thought all equivalence modify or change, must be contained by claim of the present invention.
Claims (14)
1. utilize the method for chemical corrosion to peel off a method for growth substrates, manufacture self-supporting iii-v nitride by the method for described stripping growth substrates, it is characterized in that:
1) growth substrates is provided;
2) in described growth substrates, iii-v nitride epitaxial resilient coating is deposited;
3) deposited semiconductor dielectric layer on described epitaxial buffer layer;
4) semiconductor medium layer described in patterning, namely: remove part semiconductor medium layer, make the part of removal and the partial separation arrangement of reservation, form periodicity or non-periodic pattern, the part place of simultaneously removing dielectric layer will expose the surface of the described epitaxial buffer layer of part, gets rid of dielectric layer and the part exposing described epitaxial buffer layer is called as growth window;
5) extension transition zone deposition is carried out on the surface exposing epitaxial buffer layer in described dielectric layer pattern, the thickness of described extension transition zone is greater than the height of semiconductor medium, described extension transition zone covers semiconductor medium layer completely, and described extension transition zone has smooth upper surface;
6) on described extension transition zone, certain thickness iii-v nitride is deposited;
7) use can only the chemical reagent of corrosion resistant semiconductor dielectric material erode step 4) in the semiconductor medium graph layer be between growth substrates and extension transition zone that formed, to form empty structure between growth substrates and extension transition zone;
Use can corrosion step 2) in the chemical reagent of epitaxial buffer layer that formed, and make such chemical reagent enter step 7) the middle empty structure formed, erode step 2) the middle epitaxial buffer layer formed, the extension transition zone of growth on growth substrates is separated with growth substrates together with having certain thickness iii-v nitride, complete the stripping of growth substrates, form the iii-v nitride of self-supporting.
2. utilize the method for chemical corrosion to peel off a method for growth substrates, by the method for described stripping growth substrates, the epitaxial structure of the device of growth on growth substrates peeled off from growth substrates, it is characterized in that:
1) growth substrates is provided;
2) in described growth substrates, iii-v nitride epitaxial resilient coating is deposited;
3) deposited semiconductor dielectric layer on described epitaxial buffer layer;
4) semiconductor medium layer described in patterning, namely: remove part semiconductor medium layer, make the part of removal and the partial separation arrangement of reservation, form periodicity or non-periodic pattern, the part place of simultaneously removing dielectric layer will expose the surface of the described epitaxial buffer layer of part, gets rid of dielectric layer and the part exposing described epitaxial buffer layer is called as growth window;
5) extension transition zone deposition is carried out on the surface exposing epitaxial buffer layer in described dielectric layer pattern, the thickness of described extension transition zone is greater than the height of semiconductor medium, described extension transition zone covers semiconductor medium layer completely, and described extension transition zone has smooth upper surface;
6) epitaxial structure of light-emitting diode of extension growing n-type epitaxial loayer, multiple quantum well light emitting layer and p-type epitaxial layer composition successively on described extension transition zone;
7) there is epitaxial structure be bonded to described in another support substrates together with growth substrates, make being bonded together of the intimate surface of the surface of the epitaxial structure of described device and described support substrates;
8) use can only the method for chemical reagent of corrosion resistant semiconductor dielectric material erode step 4) in the semiconductor medium graph layer be between growth substrates and extension transition zone that formed, to form empty structure between growth substrates and extension transition zone;
9) using can corrosion step 2) in the chemical reagent of epitaxial buffer layer that formed, and make such chemical reagent enter step 8) the middle empty structure formed, erode step 2) the middle epitaxial buffer layer formed, the epitaxial structure of growth on growth substrates is separated together with support substrates and growth substrates, complete the stripping of growth substrates, and by step 6) in form device epitaxial structure and transfer in support substrates.
3. method according to claim 1 and 2, is characterized in that: the material of described substrate is Al
2o
3or the semi-conducting material such as SiC.
4. method according to claim 1 and 2, it is characterized in that: described nitride epitaxial resilient coating is iii-v nitride, with MOCVD or the method such as halogenation vapour phase epitaxy (HVPE) or PVD deposition gained, its preferred thickness is between 5 ~ 1000 dusts.
5. method according to claim 1 and 2, is characterized in that: described semiconductor medium layer is SiO
2, one or more materials in SiN or SiONx, with method deposition gained such as plasma reinforced chemical vapour deposition (PECVD), PVD or electron beam evaporations, its preferred thickness is between 0.01 ~ 5 micron.
6. method according to claim 1 and 2, is characterized in that: described in patterning, semiconductor medium layer at least comprises the following steps:
A) described dielectric layer surface forms photoresist layer, by exposure technology, described photoresist layer is made into photoetching agent pattern;
B) adopt dry etching or wet etching that photoetching agent pattern is transferred to described dielectric layer, to come out completely in the surface eroding the nitride buffering of the part of dielectric layer, form the growth window of subsequent growth extension transition zone, the dielectric layer remained is formed and stops epitaxially grown patterned medium to salt down rete;
C) the residual of described photoetching blob of viscose is removed.
7. method according to claim 1 and 2, it is characterized in that: extension transition zone is deposited on MOCVD or the method such as halogenation vapour phase epitaxy (HVPE) or PVD has growth window and patterned medium salts down on the substrate of rete, the thickness of extension transition zone is greater than described medium and salts down the thickness of rete.
8. method according to claim 1, is characterized in that: described extension transition zone deposits certain thickness iii-v nitride, is deposited on extension transition zone with MOCVD or the method such as halogenation vapour phase epitaxy (HVPE) or PVD.
9. method according to claim 2, is characterized in that: the epitaxial structure layer of described LED device at least comprises N-shaped GaN, and InGaN Multiple Quantum Well (MQW) luminescent layer, with p-type GaN, is deposited on extension transition zone with MOCVD method.
10. method according to claim 2, is characterized in that: support substrates substrate can be Cu base substrate, also can be other Semiconductor substrate as Si and GaAs substrate, can also be the good ceramic substrate of heat conduction.
11. methods according to claim 2, is characterized in that: the metal bondings such as the preferred Au-Au bonding of bonding technology or AuSn, can also select organic bond bonding.
12. methods according to claim 1 and 2, is characterized in that: can only the chemical reagent of corrosion resistant semiconductor dielectric material can be the mixture of HF solution or HF and other chemical reagent.
13. methods according to claim 1 and 2, is characterized in that: the chemical reagent that can corrode described resilient coating can be KOH solution, also can be NaOH solution, or H
2sO
4and H
2pO
4mixed solution, or other can corrode the solution of nitride.
14. methods according to claim 1 and 2, it is characterized in that: first use and the method for chemical reagent of corrosion resistant semiconductor dielectric material can only erode step and be in semiconductor medium graph layer between growth substrates and extension transition zone, empty structure is formed between growth substrates and extension transition zone, then the chemical reagent allowing to corrode epitaxial buffer layer enters described empty structure erosion and falls described epitaxial loayer resilient coating, completes the stripping of growth substrates.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510290140.1A CN104993023B (en) | 2015-05-29 | 2015-05-29 | A kind of method that method using chemical attack removes growth substrates |
| PCT/CN2016/076453 WO2016192434A1 (en) | 2015-05-29 | 2016-03-16 | Method for removing growth substrate by utilizing chemical corrosion |
| TW105109927A TWI647335B (en) | 2015-05-29 | 2016-03-29 | Method for stripping growth substrate by chemical etching |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510290140.1A CN104993023B (en) | 2015-05-29 | 2015-05-29 | A kind of method that method using chemical attack removes growth substrates |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104993023A true CN104993023A (en) | 2015-10-21 |
| CN104993023B CN104993023B (en) | 2018-06-05 |
Family
ID=54304807
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510290140.1A Active CN104993023B (en) | 2015-05-29 | 2015-05-29 | A kind of method that method using chemical attack removes growth substrates |
Country Status (3)
| Country | Link |
|---|---|
| CN (1) | CN104993023B (en) |
| TW (1) | TWI647335B (en) |
| WO (1) | WO2016192434A1 (en) |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105895761A (en) * | 2016-06-07 | 2016-08-24 | 厦门乾照光电股份有限公司 | GaN-based light emitting diode with strippable structure |
| CN105895755A (en) * | 2016-06-07 | 2016-08-24 | 厦门乾照光电股份有限公司 | Manufacturing method of GaN-based light emitting diode with strippable structure |
| WO2016192434A1 (en) * | 2015-05-29 | 2016-12-08 | 上海芯元基半导体科技有限公司 | Method for removing growth substrate by utilizing chemical corrosion |
| CN106252481A (en) * | 2016-08-29 | 2016-12-21 | 河北工业大学 | A kind of vertical LED chip preparation method realizing Sapphire Substrate recycling |
| CN106784182A (en) * | 2016-12-16 | 2017-05-31 | 厦门乾照光电股份有限公司 | A kind of substrate desquamation structure of light emitting diode, preparation method and stripping means |
| CN108878598A (en) * | 2018-05-31 | 2018-11-23 | 华灿光电（浙江）有限公司 | A kind of production method of light emitting diode chip with vertical |
| CN109216511A (en) * | 2017-07-03 | 2019-01-15 | 上海芯元基半导体科技有限公司 | The face P goes out the film LED chip and its manufacturing method of light |
| CN110783170A (en) * | 2018-07-25 | 2020-02-11 | 乂馆信息科技(上海)有限公司 | Method for stripping semiconductor film and transferring substrate |
| CN111129242A (en) * | 2019-12-27 | 2020-05-08 | 广东省半导体产业技术研究院 | LED preparation method and LED structure to be stripped |
| CN111628055A (en) * | 2020-04-20 | 2020-09-04 | 浙江博蓝特半导体科技股份有限公司 | AlGaN-based ultraviolet LED epitaxial layer and stripping method thereof |
| CN114141914A (en) * | 2021-12-01 | 2022-03-04 | 东莞市中麒光电技术有限公司 | Substrate peeling method |
| CN114899696A (en) * | 2022-05-19 | 2022-08-12 | 山东大学 | Substrate corrosion method of GaAs-based VECSEL laser |
| CN116799113A (en) * | 2023-08-23 | 2023-09-22 | 江西兆驰半导体有限公司 | Substrate preparation method, substrate, epitaxial wafer and LED chip |
| WO2023206122A1 (en) * | 2022-04-27 | 2023-11-02 | 重庆康佳光电技术研究院有限公司 | Chip assembly and preparation method therefor, and preparation method for display panel |
| CN117005032A (en) * | 2023-10-07 | 2023-11-07 | 深圳市鲁光电子科技有限公司 | Growth method of semiconductor material |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113345798B (en) * | 2021-06-01 | 2022-07-12 | 中科汇通(内蒙古)投资控股有限公司 | Method for preparing GaN by SiC substrate epitaxy |
| CN115233304B (en) * | 2022-06-17 | 2023-12-22 | 西安电子科技大学 | Preparation method of self-supporting GaN film based on AlPN buffer layer |
| CN115491764B (en) * | 2022-09-29 | 2024-01-30 | 中国电子科技集团公司第十三研究所 | Method for stripping epitaxial diamond and GaN material |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1720116A (en) * | 2002-12-05 | 2006-01-11 | 浜松光子学株式会社 | Laser processing device |
| CN102709411B (en) * | 2012-06-04 | 2014-08-20 | 中国科学院半导体研究所 | Vertically-structured LED manufacturing method based on wet lift-off |
| US8889449B2 (en) * | 2012-03-19 | 2014-11-18 | Toyoda Gosei Co., Ltd | Group III nitride semiconductor light-emitting element and method for producing the same |
| CN104638068A (en) * | 2013-11-07 | 2015-05-20 | 上海蓝光科技有限公司 | Substrate structure for III-V nitride growing and manufacturing method thereof |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101866880B (en) * | 2009-04-16 | 2012-11-21 | 展晶科技(深圳)有限公司 | Method for separating base plate and semiconductor layer |
| CN101794849B (en) * | 2010-02-23 | 2011-06-22 | 山东华光光电子有限公司 | Wet etching stripping method of SiC-substrate GaN-based LED |
| TWI474507B (en) * | 2011-10-18 | 2015-02-21 | Lextar Electronics Corp | Manufacturing method of solid state light emitting element |
| CN104993023B (en) * | 2015-05-29 | 2018-06-05 | 上海芯元基半导体科技有限公司 | A kind of method that method using chemical attack removes growth substrates |
-
2015
- 2015-05-29 CN CN201510290140.1A patent/CN104993023B/en active Active
-
2016
- 2016-03-16 WO PCT/CN2016/076453 patent/WO2016192434A1/en active Application Filing
- 2016-03-29 TW TW105109927A patent/TWI647335B/en active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1720116A (en) * | 2002-12-05 | 2006-01-11 | 浜松光子学株式会社 | Laser processing device |
| US8889449B2 (en) * | 2012-03-19 | 2014-11-18 | Toyoda Gosei Co., Ltd | Group III nitride semiconductor light-emitting element and method for producing the same |
| CN102709411B (en) * | 2012-06-04 | 2014-08-20 | 中国科学院半导体研究所 | Vertically-structured LED manufacturing method based on wet lift-off |
| CN104638068A (en) * | 2013-11-07 | 2015-05-20 | 上海蓝光科技有限公司 | Substrate structure for III-V nitride growing and manufacturing method thereof |
Cited By (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016192434A1 (en) * | 2015-05-29 | 2016-12-08 | 上海芯元基半导体科技有限公司 | Method for removing growth substrate by utilizing chemical corrosion |
| CN105895761A (en) * | 2016-06-07 | 2016-08-24 | 厦门乾照光电股份有限公司 | GaN-based light emitting diode with strippable structure |
| CN105895755A (en) * | 2016-06-07 | 2016-08-24 | 厦门乾照光电股份有限公司 | Manufacturing method of GaN-based light emitting diode with strippable structure |
| CN105895755B (en) * | 2016-06-07 | 2018-01-26 | 厦门乾照光电股份有限公司 | A kind of GaN LED production method with peelable structure |
| CN105895761B (en) * | 2016-06-07 | 2018-02-23 | 厦门乾照光电股份有限公司 | A kind of GaN light emitting diode with peelable structure |
| CN106252481A (en) * | 2016-08-29 | 2016-12-21 | 河北工业大学 | A kind of vertical LED chip preparation method realizing Sapphire Substrate recycling |
| CN106252481B (en) * | 2016-08-29 | 2018-12-07 | 河北工业大学 | A kind of vertical LED chip preparation method for realizing Sapphire Substrate recycling |
| CN106784182A (en) * | 2016-12-16 | 2017-05-31 | 厦门乾照光电股份有限公司 | A kind of substrate desquamation structure of light emitting diode, preparation method and stripping means |
| CN109216511A (en) * | 2017-07-03 | 2019-01-15 | 上海芯元基半导体科技有限公司 | The face P goes out the film LED chip and its manufacturing method of light |
| CN108878598A (en) * | 2018-05-31 | 2018-11-23 | 华灿光电（浙江）有限公司 | A kind of production method of light emitting diode chip with vertical |
| CN110783170A (en) * | 2018-07-25 | 2020-02-11 | 乂馆信息科技(上海)有限公司 | Method for stripping semiconductor film and transferring substrate |
| CN110783170B (en) * | 2018-07-25 | 2022-05-24 | 乂馆信息科技(上海)有限公司 | Method for stripping semiconductor film and transferring substrate |
| CN111129242A (en) * | 2019-12-27 | 2020-05-08 | 广东省半导体产业技术研究院 | LED preparation method and LED structure to be stripped |
| CN111628055A (en) * | 2020-04-20 | 2020-09-04 | 浙江博蓝特半导体科技股份有限公司 | AlGaN-based ultraviolet LED epitaxial layer and stripping method thereof |
| CN111628055B (en) * | 2020-04-20 | 2021-08-17 | 浙江博蓝特半导体科技股份有限公司 | AlGaN-based ultraviolet LED epitaxial layer and stripping method thereof |
| CN114141914A (en) * | 2021-12-01 | 2022-03-04 | 东莞市中麒光电技术有限公司 | Substrate peeling method |
| CN114141914B (en) * | 2021-12-01 | 2023-05-23 | 东莞市中麒光电技术有限公司 | Substrate peeling method |
| WO2023206122A1 (en) * | 2022-04-27 | 2023-11-02 | 重庆康佳光电技术研究院有限公司 | Chip assembly and preparation method therefor, and preparation method for display panel |
| CN114899696A (en) * | 2022-05-19 | 2022-08-12 | 山东大学 | Substrate corrosion method of GaAs-based VECSEL laser |
| CN116799113A (en) * | 2023-08-23 | 2023-09-22 | 江西兆驰半导体有限公司 | Substrate preparation method, substrate, epitaxial wafer and LED chip |
| CN117005032A (en) * | 2023-10-07 | 2023-11-07 | 深圳市鲁光电子科技有限公司 | Growth method of semiconductor material |
| CN117005032B (en) * | 2023-10-07 | 2024-01-26 | 深圳市鲁光电子科技有限公司 | Growth method of semiconductor material |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104993023B (en) | 2018-06-05 |
| WO2016192434A1 (en) | 2016-12-08 |
| TWI647335B (en) | 2019-01-11 |
| TW201706452A (en) | 2017-02-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104993023A (en) | Method for removing growth substrate by utilizing chemical corrosion method | |
| US8735867B2 (en) | Group III nitride nanorod light emitting device | |
| US6815241B2 (en) | GaN structures having low dislocation density and methods of manufacture | |
| TWI401729B (en) | Method for interdicting dislocation of semiconductor with dislocation defects | |
| CN102315347B (en) | Light emitting diode epitaxial structure and manufacture method thereof | |
| KR101154596B1 (en) | Semiconductor light emitting device and fabrication method thereof | |
| US20080261403A1 (en) | Method for obtaining high-quality boundary for semiconductor devices fabricated on a partitioned substrate | |
| EP2389693B1 (en) | Light emitting diode device and method for manufacturing the same | |
| TWI416612B (en) | Semiconductor device and manufacturing method thereof | |
| JP7448994B2 (en) | A method for fabricating resonant cavities and distributed Bragg reflector mirrors on wings of epitaxial lateral overgrowth regions for vertical cavity surface emitting lasers. | |
| US8298842B2 (en) | Method for manufacturing semiconductor light-emitting device | |
| JP2017504221A (en) | III-V nitride semiconductor epitaxial wafer, device including the epitaxial wafer, and method for manufacturing the same | |
| CN102201512A (en) | Patterned structure substrate | |
| US20130140593A1 (en) | Light emitting diode | |
| JP2009155141A (en) | Method of preparing semiconductor substrate, semiconductor substrate, and compound semiconductor luminous element using it | |
| CN101621109A (en) | Semiconductor structure and light-emitting diode | |
| CN104934509A (en) | III-V family nitride semiconductor epitaxial structure, device comprising epitaxial structure and preparation method thereof | |
| JP2009123836A (en) | Nitride semiconductor light-emitting element | |
| US20120068196A1 (en) | Semiconductor light-emitting device and a method of manufacture thereof | |
| CN101728244A (en) | Method for blocking dislocation defects of semiconductor | |
| CN101488549B (en) | LED manufacturing method capable of increasing light emission rate | |
| KR20070113652A (en) | Method of silicon substrate based light emitting diodes using for wafer bonding process | |
| KR100786797B1 (en) | III-nitride semiconductor on Si related substrate including the step formation and its opto-devices and manufacturing method thereof | |
| CN106784217A (en) | Compound substrate, semiconductor device structure and preparation method thereof | |
| KR100771227B1 (en) | Nitride-based Light Emitting Diode with Dielectric distributed Bragg reflector and Fabrication Method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP02 | Change in the address of a patent holder |
Address after: Room 507-2, building 3, 111 Xiangke Road, China (Shanghai) pilot Free Trade Zone, Pudong New Area, Shanghai 201210 Patentee after: CHIP FOUNDATION TECHNOLOGY Ltd. Address before: Room t1046, building 3, No. 151, Chuansha Road, Pudong New Area, Shanghai 201200 Patentee before: CHIP FOUNDATION TECHNOLOGY Ltd. |
|
| CP02 | Change in the address of a patent holder |