CN104733814A - Miniature dual microwave and millimeter wave self-load I/Q quadrature filter - Google Patents
Miniature dual microwave and millimeter wave self-load I/Q quadrature filter Download PDFInfo
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Abstract
The invention discloses a miniature dual microwave and millimeter wave self-load I/Q quadrature filter which comprises a directional coupler and two microwave and millimeter wave filters. Wherein the directional coupler is in self connection with a matched load and the two microwave and millimeter wave filters are each of a strip line structure. The directional coupler in self connection with the matched load comprises a surface-mounted input/output interface, a broadside coupling strip line of a dual spiral structure and the matched load in self connection with an isolation port. The two microwave and millimeter wave filters each comprise a surface-mounted output interface and a six-level parallel resonance unit achieved through the strip line structure, and the structures are achieved through the multi-layer low temperature co-fired ceramic process technology. The miniature dual microwave and millimeter wave self-load I/Q quadrature filter has the advantages of being free of any external load, capable of generating a quadrature phase, easy to debug, small in insertion loss, light, small in size, high in reliability, good in electrical performance, good in temperature stability, good in electrical performance batch consistency, low in cost and the like, and is suitable for communication of corresponding millimeter wave frequency bands, satellite communications, and other occasions and corresponding systems having strict requirements for sizes, electrical performance, temperature stability and reliability.
Description
Technical field
The present invention relates to a kind of filter, particularly a kind of miniature pair of microwave and millimeter wave is from load I/Q orthogonal filter.
Background technology
In recent years, along with the developing rapidly of microminiaturization of mobile communication, satellite communication and Defensive Avionics System, high-performance, low cost and miniaturization have become the developing direction of microwave current/RF application, all have higher requirement to the performance of microwave filter, size, reliability and cost.In some national defence tip device, present use frequency range is quite full, so the tip device such as satellite communication develop towards millimeter wave band, so microwave and millimeter wave band filter has become the critical electronic parts in this band reception and transmitting branch, the leading indicator describing this component capabilities has had: passband operating frequency range, stop band frequency range, pass band insertion loss, stopband attenuation, passband input/output voltage standing-wave ratio, insertion phase shift and delay/frequency characteristic, temperature stability, volume, weight, reliability etc.Coupler is the important composition parts in various microwave integrated circuit always, because straightthrough port is different from the output of coupling aperture, is therefore connected with filter by coupler, can expand the scope of application of filter.
LTCC is a kind of Electronic Encapsulating Technology, adopts multi-layer ceramics technology, passive component can be built in medium substrate inside, and also active element can be mounted on substrate surface makes passive/active integrated functional module simultaneously.LTCC technology all shows many merits in cost, integration packaging, wiring live width and distance between centers of tracks, low impedance metal, design diversity and flexibility and high frequency performance etc., has become the mainstream technology of passive integration.The advantages such as it has high q-factor, is convenient to embedded passive device, and thermal diffusivity is good, and reliability is high, high temperature resistant, punching shake, utilize LTCC technology, can well process size little, precision is high, and tight type is good, the microwave device that loss is little.Because LTCC technology has the integrated advantage of 3 D stereo, be widely used for manufacturing various microwave passive components at microwave frequency band, the height realizing passive component is integrated.Based on the stack technology of LTCC technique, can realize three-dimensional integrated, thus size is little, lightweight, performance is excellent, reliability is high, batch production performance consistency is good and the plurality of advantages such as low cost to make various micro microwave filter have, utilize its three-dimensional integrated morphology feature, the miniature pair of microwave and millimeter wave that can realize being realized by strip line is from load I/Q orthogonal filter.
Traditional filter; such as microstrip filter; usually identical performance parameter is realized; volume required usually can realize than LTCC technique much bigger; thus the inferior position on engineer applied just highlights; when adopting LTCC technique to realize, in volume little as far as possible, optimized performance can be realized.And the filter adopted under conventional situation, does not have orthogonal function, but realized by external orthogonal device.
Summary of the invention
The object of the present invention is to provide a kind of by strip lines configuration and certainly connect that matched load directional coupler realizes that volume is little, lightweight, reliability is high, excellent electrical property, the miniature pair of microwave and millimeter wave that easy to use, applied widely, rate of finished products is high, batch consistency is good, cost is low, temperature performance is stable be from load I/Q orthogonal filter.
The technical scheme realizing the object of the invention is: a kind of miniature pair of microwave and millimeter wave, from load I/Q orthogonal filter, comprises directional coupler and two the microwave and millimeter wave filters from connecing matched load.Surface-pasted 50 ohmage input ports are comprised from the directional coupler connecing matched load, first matched line, the double-stranded broadside coupled striplines of ground floor, second matched line, first outputting inductance, second outputting inductance, 3rd matched line, the double-stranded broadside coupled striplines of the second layer, 4th matched line, surface-pasted 50 ohmage isolated ports, tantalum resistance, wherein, the double-stranded broadside coupled striplines of ground floor is vertically positioned at above the double-stranded broadside coupled striplines of the second layer, first matched line, the double-stranded broadside coupled striplines of the second layer and the second matched line are at same plane, first matched line is connected with surface-pasted 50 ohmage input ports, second matched line is connected with the first outputting inductance, the double-stranded broadside coupled striplines left end of the second layer is connected with the first matched line, the double-stranded broadside coupled striplines right-hand member of the second layer is connected with the second matched line, 3rd matched line, the double-stranded broadside coupled striplines of ground floor and the 4th matched line are at same plane, 3rd matched line is connected with the second outputting inductance, 4th matched line is connected with surface-pasted 50 ohmage isolated ports, the double-stranded broadside coupled striplines left end of ground floor is connected with the 3rd matched line, the double-stranded broadside coupled striplines right-hand member of ground floor is connected with the 4th matched line, and the two ends of tantalum resistance are connected with surface-pasted 50 ohmage isolated port two ends and earth terminal respectively.First microwave and millimeter wave filter comprises the first input inductance, first order parallel resonance unit, second level parallel resonance unit, third level parallel resonance unit, fourth stage parallel resonance unit, level V parallel resonance unit, 6th grade of parallel resonance unit, 3rd outputting inductance, surface-pasted 50 ohmage first output ports, first Z-shaped interstage coupling strip line, parallel resonance unit at different levels forms by three layers of strip line, second layer strip line is vertically positioned at above third layer strip line, and ground floor strip line is vertically positioned at above second layer strip line, and first order parallel resonance unit is by the first strip line of ground floor, second strip line of the second layer, 3rd strip line of third layer, first micro-Capacitance parallel connection forms, and second level parallel resonance unit is by the 4th strip line of ground floor, 5th strip line of the second layer, 6th strip line of third layer, second micro-Capacitance parallel connection forms, and third level parallel resonance unit is by the 7th strip line of ground floor, 8th strip line of the second layer, 9th strip line of third layer, 3rd micro-Capacitance parallel connection forms, and fourth stage parallel resonance unit is by the tenth strip line of ground floor, 11 strip line of the second layer, 12 strip line of third layer, 4th micro-Capacitance parallel connection forms, and level V parallel resonance unit is by the 13 strip line of ground floor, 14 strip line of the second layer, 15 strip line of third layer, 5th micro-Capacitance parallel connection forms, and the 6th grade of parallel resonance unit is by the 16 strip line of ground floor, 17 strip line of the second layer, 18 strip line of third layer, 6th micro-Capacitance parallel connection forms, wherein, second strip line and first of the second layer of first order parallel resonance unit inputs inductance and is connected, 17 strip line of the second layer of the 6th grade of parallel resonance unit is connected with the 3rd outputting inductance, 3rd outputting inductance is connected with surface-pasted 50 ohmage first output ports, and the first Z-shaped interstage coupling strip line is positioned at below parallel resonance unit.Six grades of parallel resonance unit ground connection respectively, wherein first and third layer of all strip line earth terminal is identical, one end is micro-capacity earth, the other end is opened a way, second layer strip line earth terminal is identical, one end ground connection, and the other end is opened a way, and earth terminal direction is contrary with first and third layer of earth terminal, the first equal ground connection in Z-shaped interstage coupling strip line two ends.Second microwave and millimeter wave filter comprises the second input inductance, first order parallel resonance unit, second level parallel resonance unit, third level parallel resonance unit, fourth stage parallel resonance unit, level V parallel resonance unit, 6th grade of parallel resonance unit, 4th outputting inductance, surface-pasted 50 ohmage second output ports, second Z-shaped interstage coupling strip line, parallel resonance unit at different levels forms by three layers of strip line, second layer strip line is vertically positioned at above third layer strip line, and ground floor strip line is vertically positioned at above second layer strip line, and first order parallel resonance unit is by the 19 strip line of ground floor, 20 strip line of the second layer, 21 strip line of third layer, 7th micro-Capacitance parallel connection forms, and second level parallel resonance unit is by the 22 strip line of ground floor, 23 strip line of the second layer, 24 strip line of third layer, 8th micro-Capacitance parallel connection forms, and third level parallel resonance unit is by the 25 strip line of ground floor, 26 strip line of the second layer, 27 strip line of third layer, 9th micro-Capacitance parallel connection forms, and fourth stage parallel resonance unit is by the 28 strip line of ground floor, 29 strip line of the second layer, 30 strip line of third layer, tenth micro-Capacitance parallel connection forms, and level V parallel resonance unit is by the 31 strip line of ground floor, 32 strip line of the second layer, 33 strip line of third layer, 11 micro-Capacitance parallel connection forms, and the 6th grade of parallel resonance unit is by the 34 strip line of ground floor, 35 strip line of the second layer, 36 strip line of third layer, 12 micro-Capacitance parallel connection forms, wherein, 20 strip line and second of the second layer of first order parallel resonance unit inputs inductance and is connected, 35 strip line of the second layer of the 6th grade of parallel resonance unit is connected with the 4th outputting inductance, 4th outputting inductance is connected with surface-pasted 50 ohmage second output ports, and the second Z-shaped interstage coupling strip line is positioned at below parallel resonance unit.Six grades of parallel resonance unit ground connection respectively, wherein first and third layer of all strip line earth terminal is identical, one end is micro-capacity earth, the other end is opened a way, second layer strip line earth terminal is identical, one end ground connection, and the other end is opened a way, and earth terminal direction is contrary with first and third layer of earth terminal, the second equal ground connection in Z-shaped interstage coupling strip line two ends.Input inductance from the first outputting inductance of the directional coupler connecing matched load with first of the first microwave and millimeter wave filter to be connected, the second outputting inductance certainly connecing the directional coupler of matched load inputs inductance with second of the second microwave and millimeter wave filter and is connected.
Compared with prior art, due to the present invention adopt low-loss low-temperature co-burning ceramic material and 3 D stereo integrated, the remarkable advantage brought is: (1) band in smooth; (2) without the need to external load; (3) shape can be produced identical, two kinds of signal waveforms of phase 90 degree; (4) volume is little, lightweight, reliability is high; (5) excellent electrical property; (6) circuit realiration structure is simple, can realize producing in enormous quantities; (7) cost is low.
Accompanying drawing explanation
Fig. 1 (a) is the present invention's miniature pair of microwave and millimeter wave from the profile of load I/Q orthogonal filter and internal structure schematic diagram; Fig. 1 (b) is profile and the internal structure schematic diagram that a kind of miniature pair of microwave and millimeter wave of the present invention certainly connects the directional coupler of matched load in load I/Q orthogonal filter; Fig. 1 (c) is profile and the internal structure schematic diagram of a kind of miniature pair of microwave and millimeter wave of the present invention first microwave and millimeter wave filter in load I/Q orthogonal filter; Fig. 1 (d) is profile and the internal structure schematic diagram of a kind of miniature pair of microwave and millimeter wave of the present invention second microwave and millimeter wave filter in load I/Q orthogonal filter.
Fig. 2 is the amplitude-versus-frequency curve of the present invention's miniature pair of microwave and millimeter wave from load I/Q orthogonal filter output port (P2, P3).
Fig. 3 is the stationary wave characteristic curve of the present invention's miniature pair of microwave and millimeter wave from load I/Q orthogonal filter input/output port.
Fig. 4 is that the present invention's miniature pair of microwave and millimeter wave is from the phase difference curve of load I/Q orthogonal filter output port (P2) with output port (P3).
Embodiment
Below in conjunction with accompanying drawing, the present invention is described in further detail.
Composition graphs 1(a), (b), (c), (d), a kind of miniature pair of microwave and millimeter wave of the present invention is from load I/Q orthogonal filter, and the directional coupler certainly connecing matched load of this orthogonal filter comprises surface-pasted 50 ohmage input ports (P1), first matched line (L1), the double-stranded broadside coupled striplines of ground floor (U1), second matched line (L2), first outputting inductance (Lout1), second outputting inductance (Lout2), 3rd matched line (L3), the double-stranded broadside coupled striplines of the second layer (U2), 4th matched line (L4), surface-pasted 50 ohmage isolated ports (P4), tantalum resistance (R), wherein, the double-stranded broadside coupled striplines of ground floor (U1) is vertically positioned at the double-stranded broadside coupled striplines of the second layer (U2) top, the first matched line (L1), the double-stranded broadside coupled striplines of the second layer (U2) and the second matched line (L2) are at same plane, first matched line (L1) is connected with surface-pasted 50 ohmage input ports (P1), second matched line (L2) is connected with the first outputting inductance (Lout1), the double-stranded broadside coupled striplines of the second layer (U2) left end is connected with the first matched line (L1), and the double-stranded broadside coupled striplines of the second layer (U2) right-hand member is connected with the second matched line (L2), 3rd matched line (L3), the double-stranded broadside coupled striplines of ground floor (U1) and the 4th matched line (L4) are at same plane, 3rd matched line (L3) is connected with the second outputting inductance (Lout2), 4th matched line (L4) is connected with surface-pasted 50 ohmage isolated ports (P4), the double-stranded broadside coupled striplines of ground floor (U1) left end is connected with the 3rd matched line (L3), the double-stranded broadside coupled striplines of ground floor (U1) right-hand member is connected with the 4th matched line (L4), the two ends of tantalum resistance (R) are connected with surface-pasted 50 ohmage isolated port (P4) two ends and earth terminal respectively.First microwave and millimeter wave filter (F1) comprises the first input inductance (Lin1), first order parallel resonance unit (L11, L21, L31, C1), second level parallel resonance unit (L12, L22, L32, C2), third level parallel resonance unit (L13, L23, L33, C3), fourth stage parallel resonance unit (L14, L24, L34, C4), level V parallel resonance unit (L15, L25, L35, C5), 6th grade of parallel resonance unit (L16, L26, L36, C6), 3rd outputting inductance (Lout3), surface-pasted 50 ohmage first output ports (P2), first Z-shaped interstage coupling strip line (Z1), parallel resonance unit at different levels forms by three layers of strip line, second layer strip line is vertically positioned at above third layer strip line, and ground floor strip line is vertically positioned at above second layer strip line, first order parallel resonance unit (L11, L21, L31, C1) by first strip line (L11) of ground floor, second strip line (L21) of the second layer, 3rd strip line (L31) of third layer, first micro-electric capacity (C1) is formed in parallel, second level parallel resonance unit (L12, L22, L32, C2) by the 4th strip line (L12) of ground floor, 5th strip line (L22) of the second layer, 6th strip line (L32) of third layer, second micro-electric capacity (C2) is formed in parallel, third level parallel resonance unit (L13, L23, L33, C3) by the 7th strip line (L13) of ground floor, 8th strip line (L23) of the second layer, 9th strip line (L33) of third layer, 3rd micro-electric capacity (C3) is formed in parallel, fourth stage parallel resonance unit (L14, L24, L34, C4) by the tenth strip line (L14) of ground floor, 11 strip line (L24) of the second layer, 12 strip line (L34) of third layer, 4th micro-electric capacity (C4) is formed in parallel, level V parallel resonance unit (L15, L25, L35, C5) by the 13 strip line (L15) of ground floor, 14 strip line (L25) of the second layer, 15 strip line (L35) of third layer, 5th micro-electric capacity (C5) is formed in parallel, the 6th grade of parallel resonance unit (L16, L26, L36, C6) by the 16 strip line (L16) of ground floor, 17 strip line (L26) of the second layer, 18 strip line (L36) of third layer, 6th micro-electric capacity (C6) is formed in parallel, wherein, and first order parallel resonance unit (L11, L21, L31, second strip line (L21) and first of the second layer C1) inputs inductance (Lin1) and is connected, the 6th grade of parallel resonance unit (L16, L26, L36, 17 strip line (L26) of the second layer C6) is connected with the 3rd outputting inductance (Lout3), 3rd outputting inductance (Lout3) is connected with surface-pasted 50 ohmage first output ports (P2), and the first Z-shaped interstage coupling strip line (Z1) is positioned at below parallel resonance unit.Six grades of parallel resonance unit ground connection respectively, wherein first and third layer of all strip line earth terminal is identical, one end is micro-capacity earth, the other end is opened a way, second layer strip line earth terminal is identical, one end ground connection, and the other end is opened a way, and earth terminal direction is contrary with first and third layer of earth terminal, the first equal ground connection in Z-shaped interstage coupling strip line (Z1) two ends.Second microwave and millimeter wave filter (F2) comprises the second input inductance (Lin2), first order parallel resonance unit (L41, L51, L61, C7), second level parallel resonance unit (L42, L52, L62, C8), third level parallel resonance unit (L43, L53, L63, C9), fourth stage parallel resonance unit (L44, L44, L44, C10), level V parallel resonance unit (L45, L45, L45, C11), 6th grade of parallel resonance unit (L46, L46, L46, C12), 4th outputting inductance (Lout4), surface-pasted 50 ohmage second output ports (P3), second Z-shaped interstage coupling strip line (Z2), parallel resonance unit at different levels forms by three layers of strip line, second layer strip line is vertically positioned at above third layer strip line, and ground floor strip line is vertically positioned at above second layer strip line, first order parallel resonance unit (L41, L51, L61, C7) by the 19 strip line (L41) of ground floor, 20 strip line (L51) of the second layer, 21 strip line (L51) of third layer, 7th micro-electric capacity (C7) is formed in parallel, second level parallel resonance unit (L42, L52, L62, C8) by the 22 strip line (L42) of ground floor, 23 strip line (L52) of the second layer, 24 strip line (L62) of third layer, 8th micro-electric capacity (C8) is formed in parallel, third level parallel resonance unit (L43, L53, L63, C9) by the 25 strip line (L43) of ground floor, 26 strip line (L53) of the second layer, 27 strip line (L63) of third layer, 9th micro-electric capacity (C9) is formed in parallel, fourth stage parallel resonance unit (L44, L54, L64, C10) by the 28 strip line (L44) of ground floor, 29 strip line (L54) of the second layer, 30 strip line (L64) of third layer, tenth micro-electric capacity (C10) is formed in parallel, level V parallel resonance unit (L45, L55, L65, C11) by the 31 strip line (L45) of ground floor, 32 strip line (L55) of the second layer, 33 strip line (L65) of third layer, 11 micro-electric capacity (C11) is formed in parallel, the 6th grade of parallel resonance unit (L46, L56, L66, C12) by the 34 strip line (L46) of ground floor, 35 strip line (L56) of the second layer, 36 strip line (L66) of third layer, 12 micro-electric capacity (C12) is formed in parallel, wherein, and first order parallel resonance unit (L41, L51, L61, 20 strip line (L51) and second of the second layer C7) inputs inductance (Lin2) and is connected, the 6th grade of parallel resonance unit (L46, L56, L66, 35 strip line (L56) of the second layer C12) is connected with the 4th outputting inductance (Lout4), 4th outputting inductance (Lout4) is connected with surface-pasted 50 ohmage second output ports (P3), and the second Z-shaped interstage coupling strip line (Z2) is positioned at below parallel resonance unit.Six grades of parallel resonance unit ground connection respectively, wherein first and third layer of all strip line earth terminal is identical, one end is micro-capacity earth, the other end is opened a way, second layer strip line earth terminal is identical, one end ground connection, and the other end is opened a way, and earth terminal direction is contrary with first and third layer of earth terminal, the second equal ground connection in Z-shaped interstage coupling strip line (Z2) two ends.Input inductance (Lin1) from first outputting inductance (Lout1) of the directional coupler connecing matched load with first of the first microwave and millimeter wave filter (F1) to be connected, the second outputting inductance (Lout2) certainly connecing the directional coupler of matched load inputs inductance (Lin2) with second of the second microwave and millimeter wave filter (F2) and is connected.
Composition graphs 1(a), (b), (c), d (), comprises surface-pasted 50 ohmage input ports (P1), first matched line (L1), the double-stranded broadside coupled striplines of ground floor (U1), second matched line (L2), first outputting inductance (Lout1), second outputting inductance (Lout2), 3rd matched line (L3), the double-stranded broadside coupled striplines of the second layer (U2), 4th matched line (L4), surface-pasted 50 ohmage isolated ports (P4), tantalum resistance (R), input inductance (Lin1, Lin2), first order parallel resonance unit (L11, L21, L31, C1, L41, L51, L61, C7), second level parallel resonance unit (L12, L22, L32, C2, L42, L52, L62, C8), third level parallel resonance unit (L13, L23, L33, C3, L43, L53, L63, C9), fourth stage parallel resonance unit (L14, L24, L34, C4, L44, L54, L64, C10), level V parallel resonance unit (L15, L25, L35, C5, L45, L55, L65, C11), 6th grade of parallel resonance unit (L16, L26, L36, C6, L46, L56, L66, C12), outputting inductance (Lout3, Lout4), surface-pasted 50 ohmage output port (P2, P3), Z-shaped interstage coupling strip line (Z1, Z2) and earth terminal all adopt multilayer LTCC technique to realize.
A kind of miniature pair of microwave and millimeter wave is from load I/Q orthogonal filter, owing to being the realization of employing multilayer LTCC technique, its low-temperature co-burning ceramic material and metallic pattern sinter and form at about 900 DEG C of temperature, so have extreme high reliability and temperature stability, because structure adopts, 3 D stereo is integrated to be grounded with multilayer folding structure and outer surface metallic shield and to encapsulate, thus volume is significantly reduced.
The present invention's miniature pair of microwave and millimeter wave is only 11mm × 3.2mm × 1.5mm from the size of load I/Q orthogonal filter, its performance can be found out from Fig. 2, Fig. 3, pass band width is 2.7GHz ~ 2.9GHz, output port (P2) is basically identical with output port (P3) output waveform in passband, input port return loss is better than 19dB, in passband, output port (P2) is approximately 90 degree with the phase difference of output port (P3).
Claims (3)
1. miniature pair of microwave and millimeter wave is from a load I/Q orthogonal filter, it is characterized in that: comprise directional coupler and two the microwave and millimeter wave filters from connecing matched load, surface-pasted 50 ohmage input ports (P1) are comprised from the directional coupler connecing matched load, first matched line (L1), the double-stranded broadside coupled striplines of ground floor (U1), second matched line (L2), first outputting inductance (Lout1), second outputting inductance (Lout2), 3rd matched line (L3), the double-stranded broadside coupled striplines of the second layer (U2), 4th matched line (L4), surface-pasted 50 ohmage isolated ports (P4), tantalum resistance (R), wherein, the double-stranded broadside coupled striplines of ground floor (U1) is vertically positioned at the double-stranded broadside coupled striplines of the second layer (U2) top, first matched line (L1), the double-stranded broadside coupled striplines of the second layer (U2) and the second matched line (L2) are at same plane, first matched line (L1) is connected with surface-pasted 50 ohmage input ports (P1), second matched line (L2) is connected with the first outputting inductance (Lout1), the double-stranded broadside coupled striplines of the second layer (U2) left end is connected with the first matched line (L1), the double-stranded broadside coupled striplines of the second layer (U2) right-hand member is connected with the second matched line (L2), 3rd matched line (L3), the double-stranded broadside coupled striplines of ground floor (U1) and the 4th matched line (L4) are at same plane, 3rd matched line (L3) is connected with the second outputting inductance (Lout2), 4th matched line (L4) is connected with surface-pasted 50 ohmage isolated ports (P4), the double-stranded broadside coupled striplines of ground floor (U1) left end is connected with the 3rd matched line (L3), the double-stranded broadside coupled striplines of ground floor (U1) right-hand member is connected with the 4th matched line (L4), the two ends of tantalum resistance (R) are connected with surface-pasted 50 ohmage isolated port (P4) two ends and earth terminal respectively, first microwave and millimeter wave filter (F1) comprises the first input inductance (Lin1), first order parallel resonance unit (L11, L21, L31, C1), second level parallel resonance unit (L12, L22, L32, C2), third level parallel resonance unit (L13, L23, L33, C3), fourth stage parallel resonance unit (L14, L24, L34, C4), level V parallel resonance unit (L15, L25, L35, C5), 6th grade of parallel resonance unit (L16, L26, L36, C6), 3rd outputting inductance (Lout3), surface-pasted 50 ohmage first output ports (P2), first Z-shaped interstage coupling strip line (Z1), parallel resonance unit at different levels forms by three layers of strip line, second layer strip line is vertically positioned at above third layer strip line, and ground floor strip line is vertically positioned at above second layer strip line, first order parallel resonance unit (L11, L21, L31, C1) by first strip line (L11) of ground floor, second strip line (L21) of the second layer, 3rd strip line (L31) of third layer, first micro-electric capacity (C1) is formed in parallel, second level parallel resonance unit (L12, L22, L32, C2) by the 4th strip line (L12) of ground floor, 5th strip line (L22) of the second layer, 6th strip line (L32) of third layer, second micro-electric capacity (C2) is formed in parallel, third level parallel resonance unit (L13, L23, L33, C3) by the 7th strip line (L13) of ground floor, 8th strip line (L23) of the second layer, 9th strip line (L33) of third layer, 3rd micro-electric capacity (C3) is formed in parallel, fourth stage parallel resonance unit (L14, L24, L34, C4) by the tenth strip line (L14) of ground floor, 11 strip line (L24) of the second layer, 12 strip line (L34) of third layer, 4th micro-electric capacity (C4) is formed in parallel, level V parallel resonance unit (L15, L25, L35, C5) by the 13 strip line (L15) of ground floor, 14 strip line (L25) of the second layer, 15 strip line (L35) of third layer, 5th micro-electric capacity (C5) is formed in parallel, the 6th grade of parallel resonance unit (L16, L26, L36, C6) by the 16 strip line (L16) of ground floor, 17 strip line (L26) of the second layer, 18 strip line (L36) of third layer, 6th micro-electric capacity (C6) is formed in parallel, wherein, and first order parallel resonance unit (L11, L21, L31, second strip line (L21) and first of the second layer C1) inputs inductance (Lin1) and is connected, the 6th grade of parallel resonance unit (L16, L26, L36, 17 strip line (L26) of the second layer C6) is connected with the 3rd outputting inductance (Lout3), 3rd outputting inductance (Lout3) is connected with surface-pasted 50 ohmage first output ports (P2), and the first Z-shaped interstage coupling strip line (Z1) is positioned at below parallel resonance unit, six grades of parallel resonance unit ground connection respectively, wherein first and third layer of all strip line earth terminal is identical, one end is micro-capacity earth, the other end is opened a way, second layer strip line earth terminal is identical, one end ground connection, and the other end is opened a way, and earth terminal direction is contrary with first and third layer of earth terminal, the first equal ground connection in Z-shaped interstage coupling strip line (Z1) two ends, second microwave and millimeter wave filter (F2) comprises the second input inductance (Lin2), first order parallel resonance unit (L41, L51, L61, C7), second level parallel resonance unit (L42, L52, L62, C8), third level parallel resonance unit (L43, L53, L63, C9), fourth stage parallel resonance unit (L44, L44, L44, C10), level V parallel resonance unit (L45, L45, L45, C11), 6th grade of parallel resonance unit (L46, L46, L46, C12), 4th outputting inductance (Lout4), surface-pasted 50 ohmage second output ports (P3), second Z-shaped interstage coupling strip line (Z2), parallel resonance unit at different levels forms by three layers of strip line, second layer strip line is vertically positioned at above third layer strip line, and ground floor strip line is vertically positioned at above second layer strip line, first order parallel resonance unit (L41, L51, L61, C7) by the 19 strip line (L41) of ground floor, 20 strip line (L51) of the second layer, 21 strip line (L51) of third layer, 7th micro-electric capacity (C7) is formed in parallel, second level parallel resonance unit (L42, L52, L62, C8) by the 22 strip line (L42) of ground floor, 23 strip line (L52) of the second layer, 24 strip line (L62) of third layer, 8th micro-electric capacity (C8) is formed in parallel, third level parallel resonance unit (L43, L53, L63, C9) by the 25 strip line (L43) of ground floor, 26 strip line (L53) of the second layer, 27 strip line (L63) of third layer, 9th micro-electric capacity (C9) is formed in parallel, fourth stage parallel resonance unit (L44, L54, L64, C10) by the 28 strip line (L44) of ground floor, 29 strip line (L54) of the second layer, 30 strip line (L64) of third layer, tenth micro-electric capacity (C10) is formed in parallel, level V parallel resonance unit (L45, L55, L65, C11) by the 31 strip line (L45) of ground floor, 32 strip line (L55) of the second layer, 33 strip line (L65) of third layer, 11 micro-electric capacity (C11) is formed in parallel, the 6th grade of parallel resonance unit (L46, L56, L66, C12) by the 34 strip line (L46) of ground floor, 35 strip line (L56) of the second layer, 36 strip line (L66) of third layer, 12 micro-electric capacity (C12) is formed in parallel, wherein, and first order parallel resonance unit (L41, L51, L61, 20 strip line (L51) and second of the second layer C7) inputs inductance (Lin2) and is connected, the 6th grade of parallel resonance unit (L46, L56, L66, 35 strip line (L56) of the second layer C12) is connected with the 4th outputting inductance (Lout4), 4th outputting inductance (Lout4) is connected with surface-pasted 50 ohmage second output ports (P3), and the second Z-shaped interstage coupling strip line (Z2) is positioned at below parallel resonance unit, six grades of parallel resonance unit ground connection respectively, wherein first and third layer of all strip line earth terminal is identical, one end is micro-capacity earth, the other end is opened a way, second layer strip line earth terminal is identical, one end ground connection, and the other end is opened a way, and earth terminal direction is contrary with first and third layer of earth terminal, the second equal ground connection in Z-shaped interstage coupling strip line (Z2) two ends, input inductance (Lin1) from first outputting inductance (Lout1) of the directional coupler connecing matched load with first of the first microwave and millimeter wave filter (F1) to be connected, the second outputting inductance (Lout2) certainly connecing the directional coupler of matched load inputs inductance (Lin2) with second of the second microwave and millimeter wave filter (F2) and is connected.
2. miniature pair of microwave and millimeter wave according to claim 1 is from load I/Q orthogonal filter, it is characterized in that: surface-pasted 50 ohmage input ports (P1), first matched line (L1), the double-stranded broadside coupled striplines of ground floor (U1), second matched line (L2), first outputting inductance (Lout1), second outputting inductance (Lout2), 3rd matched line (L3), the double-stranded broadside coupled striplines of the second layer (U2), 4th matched line (L4), surface-pasted 50 ohmage isolated ports (P4), tantalum resistance (R), input inductance (Lin1, Lin2), first order parallel resonance unit (L11, L21, L31, C1, L41, L51, L61, C7), second level parallel resonance unit (L12, L22, L32, C2, L42, L52, L62, C8), third level parallel resonance unit (L13, L23, L33, C3, L43, L53, L63, C9), fourth stage parallel resonance unit (L14, L24, L34, C4, L44, L54, L64, C10), level V parallel resonance unit (L15, L25, L35, C5, L45, L55, L65, C11), 6th grade of parallel resonance unit (L16, L26, L36, C6, L46, L56, L66, C12), outputting inductance (Lout3, Lout4), surface-pasted 50 ohmage output port (P2, P3), Z-shaped interstage coupling strip line (Z1, Z2) and earth terminal all adopt multilayer LTCC technique to realize.
3. miniature pair of microwave and millimeter wave according to claim 1 and 2 is from load I/Q orthogonal filter, it is characterized in that: input port (P1) is connected with the double-stranded broadside coupled striplines of the second layer (U2) by the first matched line (L1), isolated port (P4) is connected with the double-stranded broadside coupled striplines of ground floor (U1) by the second matched line (L4), isolated port (P4) is connected with earth terminal by tantalum resistance (R), second output port (P2) is by the 3rd outputting inductance (Lout3) and the 6th grade of parallel resonance unit (L16, L26, L36, 17 strip line (L26) of the second layer C6) connects, 3rd output port (P3) is by the 4th outputting inductance (Lout4) and the 6th grade of parallel resonance unit (L46, L56, L66, 35 strip line (L56) of the second layer C12) connects.
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