CN104966875A - Microwave and millimeter wave active balanced filter power splitter - Google Patents

Abstract

The invention discloses a microwave and millimeter wave active balanced filter power divider, which comprises a single pole double throw switch chip WKD102010040, a low noise amplifier chip WFD022036-L12, a balanced filter, a microwave and millimeter wave power divider, and a surface-mounted 50-ohm Impedance input/output interface, the above structure is realized by multi-layer low temperature co-fired ceramic technology (LTCC technology). The invention has the advantages of phase inversion, small insertion loss, easy debugging, light weight, small size, high reliability, good electrical performance, good temperature stability, low cost, and mass production, and is suitable for the corresponding millimeter wave frequency band Communications, satellite communications and other occasions and corresponding systems that have strict requirements on volume, electrical performance, temperature stability and reliability.

Description

Microwave and millimeter wave active balanced filter power splitter

technical field

The invention relates to a microwave and millimeter wave power divider, in particular to a microwave and millimeter wave active balanced filter power divider.

Background technique

Nowadays, whether it is military radar, electronic detection, electronic countermeasures, etc., or civilian mobile phone communication, TV, remote control, it is necessary to distribute and process electronic signals, which requires the use of an important microwave passive device—power divider ( Splitters). It is a microwave network that divides one signal into two or multiple signals. If it is used in reverse, it is a power combiner that synthesizes several signals into one signal. Now power splitters have been widely used in various in electronic equipment. Balanced filters have always been an important component of various microwave integrated circuits. Since the two output ports output equal-amplitude inverted differential-mode signals, the addition of switches increases the flexibility of the input signal. It is widely used in practical applications, so the balanced The filter is connected to the power divider, which can expand the use range of the power divider, make the stop band attenuation of the power divider more considerable, overcome the unsatisfactory stop band attenuation of a single power divider at a single frequency point, and in the microwave The input end of the millimeter wave is connected to a low-noise amplifier, which amplifies the power of useful signals and has great application prospects.

Low-temperature co-fired ceramics is an electronic packaging technology. Using multilayer ceramic technology, passive components can be built inside the dielectric substrate, and active components can also be mounted on the surface of the substrate to form passive/active integration functions. module. LTCC technology has many advantages in terms of cost, integrated packaging, wiring line width and line spacing, low impedance metallization, design diversity and flexibility, and high frequency performance, and has become the mainstream technology of passive integration. It has the advantages of high Q value, easy to embed passive devices, good heat dissipation, high reliability, high temperature resistance, shock resistance, etc., using LTCC technology, it can be well processed into small size, high precision, good compactness, low loss small microwave devices. Because LTCC technology has the advantages of three-dimensional integration, it is widely used in the microwave frequency band to manufacture various microwave passive components to achieve high integration of passive components. The stacking technology based on the LTCC process can realize three-dimensional integration, so that various micro microwave filters have many advantages such as small size, light weight, excellent performance, high reliability, good consistency in mass production performance, and low cost. The characteristics of three-dimensional integrated structure can realize microwave and millimeter wave active balanced filter power splitter.

Contents of the invention

The object of the present invention is to provide a microwave and millimeter wave amplifier with high stopband attenuation, small size, light weight, high reliability, excellent electrical performance, simple structure, high yield, good batch consistency, low cost and stable temperature performance. Source balanced filter splitter.

The technical solution for realizing the purpose of the present invention is: a microwave and millimeter wave active balanced filter power divider, which is composed of a single pole double throw switch chip WKD102010040, a balanced filter, a low noise amplifier chip WFD022036-L12, and a microwave and millimeter wave power divider . The balanced filter includes a surface-mounted 50-ohm impedance first input port, a surface-mounted 50-ohm impedance second input port, a first input inductance, a second input inductance, a first-stage parallel resonance unit, and a second-stage parallel resonance Unit, third-level parallel resonant unit, fourth-level parallel resonant unit, fifth-level parallel resonant unit, sixth-level parallel resonant unit, output inductor, Z-shaped inter-level coupling stripline, surface-mounted 50-ohm impedance output port, all levels of parallel resonant units are composed of three layers of striplines, the second layer of striplines is vertically above the third layer of striplines, the first layer of striplines is vertically above the second layer of striplines, the first The level parallel resonance unit is composed of the first stripline of the first layer, the second stripline of the second layer, the third stripline of the third layer, and the first microcapacitor in parallel, and the second level parallel resonance unit consists of The fourth stripline of the first layer, the fifth stripline of the second layer, the sixth stripline of the third layer, and the second microcapacitor are connected in parallel, and the third-level parallel resonance unit is composed of the first layer of the first layer. Seven striplines, the eighth stripline on the second layer, the ninth stripline on the third layer, and the third microcapacitor are connected in parallel, and the fourth parallel resonance unit is composed of the tenth stripline on the first layer, The eleventh stripline on the second layer, the twelfth stripline on the third layer, and the fourth microcapacitor are connected in parallel, and the fifth-level parallel resonant unit is composed of the thirteenth stripline on the first layer, the second The fourteenth stripline of the first layer, the fifteenth stripline of the third layer, and the fifth microcapacitor are connected in parallel, and the sixth parallel resonant unit is composed of the sixteenth stripline of the first layer, the The seventeenth stripline, the eighteenth stripline on the third layer, and the sixth microcapacitor are connected in parallel, wherein the first input inductance is connected to the first input port of the surface-mounted 50-ohm impedance, and the second input inductance Connect with the second input port of the surface mount 50 ohm impedance, the second stripline of the second layer of the first-level parallel resonance unit is connected with the first input inductance, the third layer of the first-level parallel resonance unit The stripline is connected to the second input inductance, the seventeenth stripline of the second layer of the sixth parallel resonant unit is connected to the output inductance, the output inductance is connected to the surface-mounted 50 ohm impedance output port, and the Z-shaped interstage The coupled stripline is located below the parallel resonant unit. The six-level parallel resonant units are grounded respectively, in which the first and third layers have the same grounding end of all striplines, one end is a microcapacitor grounding, and the other end is open circuit, the second layer stripline grounding end is the same, one end is grounding, the other end is open circuit, and The direction of the ground terminal is opposite to that of the first and third layer ground terminals, and both ends of the Z-shaped inter-stage coupling stripline are grounded. The microwave and millimeter wave power divider includes a surface-mounted 50-ohm impedance first input port, an input inductor, a first quarter-wavelength transmission line, a second quarter-wavelength transmission line, a first output inductor, a second output inductor, Snubber resistor, surface mount 50 ohm impedance first output port, surface mount 50 ohm impedance second output port, surface mount 50 ohm impedance first input port connected to input inductor, first quarter wavelength The transmission line and the second quarter-wavelength transmission line are connected in parallel to both ends of the absorption resistor, the first quarter-wavelength transmission line is connected to the first output inductor, the second quarter-wavelength transmission line is connected to the second output inductor, and the first The output inductor is connected to the first output port, and the second output inductor is connected to the second output port. RFOut1 of SPDT switch chip WKD102010040 is connected to the first input port of 50 ohm impedance of surface mount, RFOut2 is connected to the second input port of 50 ohm impedance of surface mount, and the output port of 50 ohm impedance of surface mount of balanced filter Connect with the surface-mounted 50-ohm impedance input port In of the low-noise amplifier chip WFD022036-L12, and connect the surface-mounted 50-ohm impedance output port Out with the surface-mounted 50-ohm impedance input port of the S microwave millimeter wave power divider .

Compared with the prior art, since the present invention adopts low-loss low-temperature co-fired ceramic materials and three-dimensional integration, the significant advantages brought about are: (1) flatness in the band; (2) good attenuation in the stop band; (3) volume Small size, light weight, high reliability; (4) Excellent electrical performance; (5) Simple circuit structure, which can realize mass production; (6) Low cost; (7) Easy to use and install, using a fully automatic placement machine to install and soldering.

Description of drawings

Figure 1(a) is a schematic diagram of the appearance and structure of a microwave and millimeter wave active balanced filter power splitter of the present invention.

Figure 1(b) is a schematic diagram of the appearance and internal structure of a switch in a microwave and millimeter wave active balanced filter power splitter of the present invention.

Figure 1(c) is a schematic diagram of the appearance and internal structure of a low noise amplifier in a microwave and millimeter wave active balanced filter power splitter of the present invention.

Figure 1(d) is a schematic diagram of the appearance and internal structure of a balanced filter in a microwave and millimeter wave active balanced filter power splitter of the present invention.

Figure 1(e) is a schematic diagram of the appearance and internal structure of a microwave and millimeter wave power splitter in a microwave and millimeter wave active balanced filter power splitter according to the present invention.

Fig. 2 is the amplitude-frequency characteristic curve of the output port (P5) of a microwave and millimeter wave active balanced filter power splitter of the present invention.

Fig. 3 is the amplitude-frequency characteristic curve of the input port (P6) of a microwave and millimeter wave active balanced filter power splitter of the present invention.

Fig. 4 is an isolation characteristic curve of output ports (P5, P6) of a microwave and millimeter wave active balanced filter power splitter of the present invention.

Detailed ways

The present invention will be described in further detail below in conjunction with the accompanying drawings.

Combined with Figure 1 (a), (b), (c), (d), (e), a microwave and millimeter wave active balanced filter power splitter of the present invention is characterized in that it consists of a single-pole double-throw switch chip WKD102010040 , balanced filter, S-band power divider. The balanced filter includes a surface-mounted 50-ohm impedance first input port P1, a surface-mounted 50-ohm impedance second input port P2, a first input inductance Lin1, a second input inductance Lin2, a first-stage parallel resonance unit L11, L21, L31, C1, second-level parallel resonance unit L12, L22, L32, C2, third-level parallel resonance unit L13, L23, L33, C3, fourth-level parallel resonance unit L14, L24, L34, C4, fifth Stage parallel resonant unit L15, L25, L35, C5, sixth stage parallel resonant unit L16, L26, L36, C6, output inductance Lout1, Z-shaped interstage coupling stripline Z, surface mounted 50 ohm impedance output port P3 , all levels of parallel resonant units are composed of three layers of striplines, the second layer of striplines is vertically above the third layer of striplines, the first layer of striplines is vertically above the second layer of striplines, the first layer of The parallel resonance units L11, L21, L31, and C1 are connected in parallel by the first stripline L11 of the first layer, the second stripline L21 of the second layer, the third stripline L31 of the third layer, and the first microcapacitor C1 Formed, the second-level parallel resonant unit L12, L22, L32, C2 is composed of the fourth stripline L12 of the first layer, the fifth stripline L22 of the second layer, the sixth stripline L32 of the third layer, The second microcapacitor C2 is connected in parallel, and the third-level parallel resonant units L13, L23, L33, and C3 are composed of the seventh stripline L13 of the first layer, the eighth stripline L23 of the second layer, and the eighth stripline L23 of the third layer. Nine striplines L33 and the third microcapacitor C3 are connected in parallel, and the fourth parallel resonant unit L14, L24, L34, C4 is formed by the tenth stripline L14 of the first layer and the eleventh stripline of the second layer L24, the twelfth stripline L34 of the third layer, and the fourth microcapacitor C4 are connected in parallel, and the fifth-level parallel resonant units L15, L25, L35, and C5 are formed by the thirteenth stripline L15 of the first layer, the The fourteenth stripline L25 on the second layer, the fifteenth stripline L35 on the third layer, and the fifth microcapacitor C5 are connected in parallel, and the sixth-level parallel resonant units L16, L26, L36, and C6 are formed by the first layer. The sixteenth stripline L16, the seventeenth stripline L26 on the second layer, the eighteenth stripline L36 on the third layer, and the sixth microcapacitor C6 are connected in parallel, wherein the first input inductance Lin1 and the surface The mounted 50 ohm impedance is connected to the first input port P1, the second input inductance Lin2 is connected to the surface mounted 50 ohm impedance second input port P2, and the second layer of the first-stage parallel resonance unit L11, L21, L31, C1 The second stripline L21 is connected to the first input inductance Lin1, the third stripline L31 of the third layer of the first-stage parallel resonant unit L11, L21, L31, C1 is connected to the second input inductance Lin2, the sixth stage The seventeenth stripline L26 of the second layer of the parallel resonant unit L16, L26, L36, C6 is connected to the output inductance Lout1, and the output inductance Lout1 is connected to the surface-mounted The 50 ohm impedance output port P3 is connected, and the Z-shaped interstage coupling stripline Z is located below the parallel resonance unit. The six-level parallel resonant units are grounded respectively, in which the first and third layers have the same grounding end of all striplines, one end is a microcapacitor grounding, and the other end is open circuit, the second layer stripline grounding end is the same, one end is grounding, the other end is open circuit, and The direction of the ground terminal is opposite to that of the first and third layer ground terminals, and both ends of the Z-shaped inter-stage coupling stripline Z are grounded. The S-band power splitter includes a surface-mounted 50-ohm impedance first input port P4, an input inductor Lin3, a first quarter-wavelength transmission line Z1, a second quarter-wavelength transmission line Z2, a first output inductor Lout2, a second Two output inductors Lout3, absorption resistor R, surface mount 50 ohm impedance first output port P5, surface mount 50 ohm impedance second output port P6, surface mount 50 ohm impedance first input port P4 and input inductor Lin3 is connected, the first quarter-wavelength transmission line Z1 and the second quarter-wavelength transmission line Z2 are connected in parallel to both ends of the absorption resistor R, the first quarter-wavelength transmission line Z1 is connected to the first output inductor Lout2, and the second The quarter wavelength transmission line Z2 is connected to the second output inductor Lout3, the first output inductor Lout2 is connected to the first output port P5, and the second output inductor Lout3 is connected to the second output port P6. The RFOut1 of the SPDT switch chip WKD102010040 is connected to the first input port P1 of the surface-mounted 50-ohm impedance, RFOut2 is connected to the second input port P2 of the surface-mounted 50-ohm impedance, and the output port P3 of the balance filter is connected to the S-band power The input port P4 of the splitter is connected.

Combined with Figure 1 (a), (b), (c), (d), (e), including surface mount 50 ohm impedance input ports P1, P2, P4, input inductors Lin1, Lin2, Lin3, balanced filter The first-level parallel resonant unit L11, L21, L31, C1, the second-level parallel resonant unit L12, L22, L32, C2, the third-level parallel resonant unit L13, L23, L33, C3, the fourth-level parallel resonant unit L14 , L24, L34, C4, fifth level parallel resonant unit L15, L25, L35, C5, sixth level parallel resonant unit L16, L26, L36, C6, first quarter wavelength transmission line Z1, second quarter One-wavelength transmission line Z2, absorption resistor R, output inductance Lout1, Lout2, Lout3, surface mount 50 ohm impedance output ports P3, P5, P6, Z-shaped inter-stage coupling stripline Z and grounding end all adopt multi-layer low temperature common Firing ceramic technology to achieve.

A microwave and millimeter wave active balanced filter power divider of the present invention is realized by the multi-layer low-temperature co-fired ceramic technology, and its low-temperature co-fired ceramic material and metal pattern are sintered at a temperature of about 900 ° C, so it has a very high Excellent reliability and temperature stability, because the structure adopts three-dimensional integration and multi-layer folding structure, and the outer surface metal shielding realizes grounding and packaging, so that the volume is greatly reduced.

The size of the balance filter in the microwave and millimeter wave active balanced filter power divider of the present invention is only 3.2mm×4.5mm×1.5mm, and the size of the microwave and millimeter wave power divider is 14mm×12.9mm×1.6mm. Its performance can be seen from Figure 2, Figure 3, and Figure 4. The passband bandwidth is 2.7GHz~2.9GHz. From Figure 2 and Figure 3, it can be seen that the output waveforms of the output port P5 and output port P6 in the passband are basically Consistent and relatively flat, it can be seen from Figure 4 that the isolation between the output port (P5) and the output port P6 signal is better than 16dB.

The WKD102010040 chip is a low insertion loss voltage-controlled reflective single-pole double-throw switch chip, which is manufactured using a 0.25-micron gate length gallium arsenide pseudo-high electron mobility transistor process. The chip is grounded through the back metal through the through hole . All chip products are 100% radio frequency measured. WKD102010040 chip works with 0/-5V or 5V/0V power supply, insertion loss within DC~4GHz: 0.5dB, isolation: 38dB, input VSWR: 1.2:1, output VSWR: 1.2:1, switching Time: 10ns.

The WFD022036-L12 chip is a single-chip low-noise amplifier with excellent performance. It is manufactured using a gallium arsenide pseudo-high electron mobility transistor with a gate length of 0.25 microns. The chip is grounded through the back metal via a through hole. All chip products are 100% radio frequency measured. Frequency range of WFD022036—L12 chip: 2.2—3.6GHz, noise figure: 1.2dB, typical gain: 25dB, output power at 1dB compression point: 12dBm, input VSWR: 1.6:1, output VSWR: 1.85: 1.

Since the microwave and millimeter wave active balanced filter power divider is simply a single-pole double-throw switch chip WKD102010040 plus an active balanced filter, the amplitude-frequency characteristic curve of the output end is within the passband range plus 0.5dB of insertion loss , the phase balance of its input port and the two output ports does not change.

Claims (4)

1. a microwave and millimeter wave active balancing filtering power splitter, is characterized in that: it is made up of single-pole double-throw switch (SPDT) chips W KD102010040, balance filter, the low noise amplifier chip WFD022036-L12, microwave and millimeter wave power splitter, balance filter comprises surface-pasted 50 ohmage first input end mouths (P1), surface-pasted 50 ohmage second input ports (P2), first input inductance (Lin1), second input inductance (Lin2), first order parallel resonance unit (L11, L21, L31, C1), second level parallel resonance unit (L12, L22, L32, C2), third level parallel resonance unit (L13, L23, L33, C3), fourth stage parallel resonance unit (L14, L24, L34, C4), level V parallel resonance unit (L15, L25, L35, C5), 6th grade of parallel resonance unit (L16, L26, L36, C6), outputting inductance (Lout1), Z-shaped interstage coupling strip line (Z), surface-pasted 50 ohmage output ports (P3), parallel resonance unit at different levels forms by three layers of strip line, second layer strip line is vertically positioned at above third layer strip line, and ground floor strip line is vertically positioned at above second layer strip line, first order parallel resonance unit (L11, L21, L31, C1) by first strip line (L11) of ground floor, second strip line (L21) of the second layer, 3rd strip line (L31) of third layer, first micro-electric capacity (C1) is formed in parallel, second level parallel resonance unit (L12, L22, L32, C2) by the 4th strip line (L12) of ground floor, 5th strip line (L22) of the second layer, 6th strip line (L32) of third layer, second micro-electric capacity (C2) is formed in parallel, third level parallel resonance unit (L13, L23, L33, C3) by the 7th strip line (L13) of ground floor, 8th strip line (L23) of the second layer, 9th strip line (L33) of third layer, 3rd micro-electric capacity (C3) is formed in parallel, fourth stage parallel resonance unit (L14, L24, L34, C4) by the tenth strip line (L14) of ground floor, 11 strip line (L24) of the second layer, 12 strip line (L34) of third layer, 4th micro-electric capacity (C4) is formed in parallel, level V parallel resonance unit (L15, L25, L35, C5) by the 13 strip line (L15) of ground floor, 14 strip line (L25) of the second layer, 15 strip line (L35) of third layer, 5th micro-electric capacity (C5) is formed in parallel, the 6th grade of parallel resonance unit (L16, L26, L36, C6) by the 16 strip line (L16) of ground floor, 17 strip line (L26) of the second layer, 18 strip line (L36) of third layer, 6th micro-electric capacity (C6) is formed in parallel, wherein, first input inductance (Lin1) is connected with surface-pasted 50 ohmage first input end mouths (P1), second input inductance (Lin2) is connected with surface-pasted 50 ohmage second input ports (P2), first order parallel resonance unit (L11, L21, L31, second strip line (L21) and first of the second layer C1) inputs inductance (Lin1) and is connected, first order parallel resonance unit (L11, L21, L31, 3rd strip line (L31) and second of third layer C1) inputs inductance (Lin2) and is connected, the 6th grade of parallel resonance unit (L16, L26, L36, 17 strip line (L26) of the second layer C6) is connected with outputting inductance (Lout1), outputting inductance (Lout1) is connected with surface-pasted 50 ohmage output ports (P3), and Z-shaped interstage coupling strip line (Z) is positioned at below parallel resonance unit, six grades of parallel resonance unit ground connection respectively, wherein first and third layer of all strip line earth terminal is identical, one end is micro-capacity earth, the other end is opened a way, second layer strip line earth terminal is identical, one end ground connection, and the other end is opened a way, and earth terminal direction is contrary with first and third layer of earth terminal, the equal ground connection in Z-shaped interstage coupling strip line (Z) two ends.

2. microwave and millimeter wave power splitter comprises surface-pasted 50 ohmage first input end mouths (P4), input inductance (Lin3), first quarter-wave transmission line (Z1), second quarter-wave transmission line (Z2), first outputting inductance (Lout2), second outputting inductance (Lout3), absorption resistance (R), surface-pasted 50 ohmage first output ports (P5), surface-pasted 50 ohmage second output ports (P6), surface-pasted 50 ohmage first input end mouths (P4) are connected with input inductance (Lin3), first quarter-wave transmission line (Z1) two ends with absorption resistance (R) in parallel with the second quarter-wave transmission line (Z2), first quarter-wave transmission line (Z1) is connected with the first outputting inductance (Lout2), second quarter-wave transmission line (Z2) is connected with the second outputting inductance (Lout3), first outputting inductance (Lout2) is connected with the first output port (P5), second outputting inductance (Lout3) is connected with the second output port (P6), the RFOut1 of single-pole double-throw switch (SPDT) chips W KD102010040 is connected with surface-pasted 50 ohmage first input end mouths (P1), RFOut2 is connected with surface-pasted 50 ohmage second input ports (P2), the surface-pasted 50 ohmage output ports (P3) of balance filter are connected with the surface-pasted 50 ohmage input port In of the low noise amplifier chip WFD022036-L12, and surface-pasted 50 ohmage Out ports are connected with the surface-pasted 50 ohmage input ports (P4) of microwave and millimeter wave power splitter.

3. microwave and millimeter wave active balancing filtering power splitter according to claim 1, is characterized in that: surface-pasted 50 ohmage input port (P1, P2, P4), input inductance (Lin1, Lin2, Lin3), the first order parallel resonance unit (L11 of balance filter, L21, L31, C1), second level parallel resonance unit (L12, L22, L32, C2), third level parallel resonance unit (L13, L23, L33, C3), fourth stage parallel resonance unit (L14, L24, L34, C4), level V parallel resonance unit (L15, L25, L35, C5), 6th grade of parallel resonance unit (L16, L26, L36, C6), first quarter-wave transmission line (Z1), second quarter-wave transmission line (Z2), absorption resistance (R), outputting inductance (Lout1, Lout2, Lout3), surface-pasted 50 ohmage output port (P3, P5, P6), Z-shaped interstage coupling strip line (Z) and earth terminal all adopt multilayer LTCC technique to realize.

4. microwave and millimeter wave active balancing filtering power splitter according to claim 1 and 2, it is characterized in that: first input end mouth (P1) is by the first input inductance (Lin1) and first order parallel resonance unit (L11, L21, L31, second strip line (L21) of the second layer C1) connects, second input port (P2) is by the second input inductance (Lin2) and first order parallel resonance unit (L11, L21, L31, 3rd strip line (L31) of third layer C1) connects, output port (P3) is by outputting inductance (Lout) and the 6th grade of parallel resonance unit (L16, L26, L36, 17 strip line (L26) of the second layer C6) connects, 3rd input port (P4) is connected with the first quarter-wave transmission line (Z1) and the second quarter-wave transmission line (Z2) by input inductance (Lin2), output port (P2) is connected with the first quarter-wave transmission line (Z1) by outputting inductance (Lout1), output port (P3) is connected with the first quarter-wave transmission line (Z2) by outputting inductance (Lout2).