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CN104538457A - 薄膜晶体管及其制作方法、阵列基板和显示装置 - Google Patents

薄膜晶体管及其制作方法、阵列基板和显示装置 Download PDF

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CN104538457A
CN104538457A CN201510020616.XA CN201510020616A CN104538457A CN 104538457 A CN104538457 A CN 104538457A CN 201510020616 A CN201510020616 A CN 201510020616A CN 104538457 A CN104538457 A CN 104538457A
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王美丽
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BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
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Priority to US14/905,375 priority patent/US20160336452A1/en
Priority to PCT/CN2015/079162 priority patent/WO2016112611A1/zh
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Abstract

本发明提供一种薄膜晶体管，包括形成在基板上的栅极、有源层、源极和漏极，所述有源层包括具有掺杂离子的氧化物，所述掺杂离子具有p轨道电子排布结构，且所述掺杂离子的p轨道能级高于所述氧化物中氧离子的2p轨道能级，以使得掺杂后有源层的价带顶高于有源层中形成的氧空位的能级。相应地，本发明还提供一种薄膜晶体管的制作方法、阵列基板和显示装置。本发明中薄膜晶体管的有源层主要由具有掺杂离子的氧化物制成，可以提高薄膜晶体管的稳定性，且不需要在显示装置上增加遮光结构，简化制作工艺。

Description

薄膜晶体管及其制作方法、阵列基板和显示装置
技术领域
本发明涉及显示技术领域，具体涉及一种薄膜晶体管及其制作方法、包括所述薄膜晶体管的阵列基板、一种包括所述阵列基板的显示装置。
背景技术
氧化物薄膜晶体管具有均匀性好、透明、制作工艺简单等优点，并且其载流子浓度是非晶硅的十倍甚至几十倍，在液晶显示器、有机发光二极管显示器等方面备受关注。
但是，目前以铟镓锌氧化物(IGZO)和铟锡锌氧化物(ITZO)为代表的氧化物薄膜晶体管普遍存在光稳定性差的问题，即在光照条件下，薄膜晶体管的阈值电压会发生偏移，甚至薄膜晶体管失效，严重影响氧化物TFT的量产应用。
在氧化锌系半导体材料中，会产生大量的本征缺陷，如氧空位、锌空位、氧间隙、锌间隙等。在这些本征缺陷中，间隙类的缺陷对半导体中载流子的影响较小，而空位类的缺陷在光照条件下会提供两个电子，对TFT稳定性影响较大。并且在氧化锌的本征缺陷中，氧空位的形成能为3.78eV，比锌空位的形成能低(4.75ev)，所以氧空位缺陷密度远高于锌空位缺陷密度。因此，氧空位成为了影响氧化物薄膜晶体管光稳定性的主要缺陷态。
现有技术中为了减少光照对氧化物薄膜晶体管的影响，采用遮光材料对薄膜晶体管进行覆盖，或在显示器的背板上对薄膜晶体管进行遮光保护，从而减小光照对薄膜晶体管的影响。但是这些方法增加了制作成本，复杂了制作工序。
发明内容
本发明的目的在于提供一种薄膜晶体管及其制作方法、一种包括所述薄膜晶体管的阵列基板和一种包括所述阵列基板的显示装置，从而能够在不增加制作成本的情况下提高薄膜晶体管的稳定性。
为了实现上述目的，本发明提供一种薄膜晶体管，包括：
形成在基板上的栅极、有源层、源极和漏极，其中，所述有源层包括具有掺杂离子的氧化物，所述掺杂离子具有p轨道电子排布结构，且所述掺杂离子的p轨道能级高于所述氧化物中氧离子的2p轨道能级，以使得有源层的价带顶高于所述氧化物中形成的氧空位的能级。
优选地，所述掺杂离子包括：F-、N3-、S2-、Se2-、P3-中至少一种离子。
优选地，所述氧化物包括：铟、镓、锌、铪、锡、铝中至少一种元素形成的金属氧化物。
优选地，所述氧化物包括氧化锌，所述掺杂离子包括N3-或S2-，所述掺杂离子在所述掺杂离子与所述氧化物中氧离子的总量中所占的摩尔比在5％～80％之间。
相应地，本发明还提供一种阵列基板，包括薄膜晶体管，所述薄膜晶体管为本发明提供的上述薄膜晶体管。
相应地，本发明还提供一种薄膜晶体管的制作方法，包括：
在基板上形成包括栅极的图形；
形成包括有源层的图形，所述有源层包括具有掺杂离子的氧化物，所述掺杂离子具有p轨道电子排布结构，且所述掺杂离子的p轨道能级高于所述氧化物中氧离子的2p轨道能级，以使得掺杂后有源层的价带顶高于所述氧化物中形成的氧空位的能级；
形成包括源极和漏极的图形。
优选地，所述掺杂离子包括：F-、N3-、S2-、Se2-、P3-中至少一种离子。
优选地，所述氧化物包括：铟、镓、锌、铪、锡、铝中至少一种元素形成的金属氧化物。
优选地，形成包括有源层的图形的步骤包括：
向反应腔室内通入工艺气体以对靶材进行轰击，所述工艺气体包括氩气、含氧气体和提供掺杂离子的气体，所述提供掺杂离子的气体在所述工艺气体中所占的体积百分比为5％～95％。
优选地，所述氧化物包括氧化锌，所述提供掺杂离子的气体包括含氮气体或含硫气体。
优选地，所述氩气的流量在5～300sccm范围内，所述含氧气体的流量在5～200sccm范围内。
相应地，本发明还提供一种显示装置，所述显示装置包括本发明提供上述阵列基板。
本发明薄膜晶体管的有源层中包括p轨道能级高于氧离子的2p轨道能级的掺杂离子，以使得有源层的价带顶升高，从而减少氧空位的数量，降低有源层缺陷态密度，进而提高薄膜晶体管的稳定性。而现有技术中对薄膜晶体管进行遮光的方法并没有对有源层的缺陷态密度进行减小，与现有技术相比，本发明可以对有源层本身进行改进，不会增加制作成本和工艺复杂度。
附图说明
附图是用来提供对本发明的进一步理解，并且构成说明书的一部分，与下面的具体实施方式一起用于解释本发明，但并不构成对本发明的限制。在附图中：
图1是对有源层的价带调节前后的示意图。
具体实施方式
以下结合附图对本发明的具体实施方式进行详细说明。应当理解的是，此处所描述的具体实施方式仅用于说明和解释本发明，并不用于限制本发明。
作为本发明的一方面，提供一种薄膜晶体管，包括：形成在基板上的栅极、有源层、源极和漏极，其中，所述薄膜晶体管的有源层包括具有掺杂离子的氧化物，所述掺杂离子具有p轨道电子排布结构，且所述掺杂离子的p轨道能级高于所述氧化物中氧离子的2p轨道能级，以使得有源层的价带顶高于所述氧化物中由于氧缺失而形成的氧空位的能级。
对于金属氧化物，在特定外界环境下，会造成晶格中的氧脱离，导致氧缺失，形成氧空位。本领域技术人员可以理解的是，氧化物有源层材料的导带底(CBM)由金属离子轨道组成，价带顶(VBM)由氧离子的2p轨道组成，因此，本发明薄膜晶体管的有源层中包括p轨道能级高于氧离子的2p轨道能级的掺杂离子，以使得有源层的价带顶升高。
如图1所示，对有源层进行价带调节前，氧空位Vo位于有源层的价带顶(VBM)和导带底(CBM)之间，对有源层进行能带调节后，有源层的带隙减小，价带顶升高，直至价带顶高于氧空位Vo的能级，这时，氧空位Vo数量减少，从而降低有源层缺陷态密度，进而提高薄膜晶体管的稳定性。而现有技术中对薄膜晶体管进行遮光的方法并没有对有源层的缺陷态密度进行减小，与现有技术相比，本发明可以对有源层本身进行改进，不会增加制作成本和工艺复杂度。
本发明对所述掺杂离子的种类不作具体限制，作为本发明的一种具体实施方式，所述掺杂离子包括F-、N3-、S2-、Se2-、P3-中至少一种离子，即所述掺杂离子可以包括上述离子中的任意一种，也可以包括上述离子中的两种及其以上的组合。其中，F-的电子排列为：1s22s22p6；N3-的电子排列为：1s22s22p6；S2-的电子排列为：1s22s22p63s23p6；Se2-的电子排列为：1s22s22p63s23p63d104s24p6；P3-的电子排列为：1s22s22p63s23p6；而O2-的电子排列为：1s22s22p6；当然，所述掺杂离子还可以包括其他离子，只要是具有p轨道电子排布结构并且能级高于O2-的2p轨道能级的离子即可。在本发明中，所述氧化物包括：铟、镓、锌、铪、锡、铝中至少一种元素形成的金属氧化物，例如，氧化锌、氧化锡、氧化铟锡。
作为本发明的一种具体实施方式，所述氧化物包括氧化锌，所述掺杂离子包括N3-或S2-，所述掺杂离子在所述掺杂离子与所述氧化物中氧离子的总量中所占的摩尔比在5％～80％之间，可以看作：5％≤N3-/(N3-+O2-)≤80％，或者5％≤S2-/(S2-+O2-)≤80％。氧化锌的带隙为3.32eV，氮化锌和硫化锌的带隙均为1.1eV，当所述掺杂离子包括N3-时，有源层(即掺杂有N3-的氧化锌层)的带隙小于氧化锌的带隙，价带顶上移，从而使得氧空位Vo减少；同样地，当所述掺杂离子包括S2-时，有源层(即掺杂有S2-的氧化锌层)的带隙也会小于氧化锌的带隙，价带顶上移，从而使得氧空位Vo减少。
所述薄膜晶体管包括但不仅限于上述结构，如，栅极和有源层之间还可以包括栅极绝缘层。
上述为对本发明提供的薄膜晶体管描述，可以看出，有源层中包括p轨道能级高于氧离子的2p轨道能级的掺杂离子，使得有源层的价带顶升高，当有源层的价带顶高于氧空位Vo的能带时，会使得氧空位的数量减少，降低有源层缺陷密度，从而提高薄膜晶体管的稳定性，延长薄膜晶体管的使用寿命。
作为本发明的第二方面，提供一种阵列基板，包括薄膜晶体管，其中，所述薄膜晶体管为本发明提供的上述薄膜晶体管。
作为本发明的第三个方面，提供一种薄膜晶体管的制作方法，包括：
在基板上形成包括栅极的图形；
形成包括有源层的图形，所述有源层包括具有掺杂离子的氧化物，所述掺杂离子具有p轨道电子排布结构，且所述掺杂离子的p轨道能级高于所述氧化物中氧离子的2p轨道能级，以使得掺杂后有源层的价带顶高于所述氧化物形成的氧空位的能级；
形成包括源极和漏极的图形。
如上文中所述，所述掺杂离子可以包括F-、N3-、S2-、Se2-、P3-中至少一种离子，或者也可以为其他具有p轨道电子排布结构，且p轨道能级高于氧离子的2p轨道能级的离子。
所述氧化物可以包括铟、镓、锌、铪、锡、铝中至少一种元素形成的金属氧化物。
可以采用不同的方法形成包括有源层的图形，如共溅射法、化学气相法或气氛烧结法等。作为本发明的一种具体实施方式，可以采用共溅射法，即在真空的反应腔室内靶材，向反应腔室内通入惰性气体，惰性气体被电离后，气体离子在电场作用下轰击靶材，使得靶材的表面粒子脱落，沉积在下方的衬底上形成氧化物膜层。为了在氧化物膜层中包含掺杂离子，可以在通入惰性气体的同时通入包括掺杂离子的气体。
具体地，形成包括有源层的图形的步骤包括：
向反应腔室内通入工艺气体以对靶材进行轰击，所述工艺气体包括氩气、含氧气体和提供掺杂离子的气体，所述提供掺杂离子的气体在所述工艺气体中所占的体积百分比为5％～95％。
进一步地，所述氧化物包括氧化锌，提供掺杂离子的气体包括含氮气体(如氮气、一氧化二氮、氨气等)或含硫气体(如二氧化硫、硅烷等)。所述靶材可以为锌靶材或氧化锌靶材，工艺气体轰击靶材从而形成氧化锌的膜层，通过调节所述含氮气体在总气体量中的比例以使得有源层中氮离子在氧离子与氮离子总量中的摩尔比在5％～80％之间；或者通过调节所述含硫气体在工艺气体中的比例以使得有源层中硫离子在氧离子与氮离子总量中的摩尔比在5％～80％之间。
优选地，所述氩气的流量在5～300sccm范围内，所述含氧气体的流量在5～200sccm范围内。氩气用于对靶材进行物理轰击，含氧气体用于使得靶材上脱落的粒子氧化以形成金属氧化物，通过对氩气和氧气气流量的调节，使得有源层的厚度以及氧离子的浓度在所需范围内。
通过共溅射的方式形成包括掺杂离子的氧化锌膜层后，可以通过光刻构图工艺在氧化锌膜层上进行构图，以形成包括有源层的图形。
如上文中所述，所述薄膜晶体管的栅极和有源层之间还可以包括栅极绝缘层，相应地，所述制作方法还包括：形成栅极绝缘层。
本发明中的薄膜晶体管包括顶栅型薄膜晶体管、顶栅共面型薄膜晶体管、底栅型薄膜晶体管、底栅共面型薄膜晶体管。形成顶栅型薄膜晶体管时，可以先在基板上形成源极和漏极，然后在所述源极和漏极上方依次形成有源层、栅极绝缘层和栅极；形成顶栅共面型薄膜晶体管时，可以先在基板上形成有源层，然后在所述有源层上方依次形成源极和漏极、栅极绝缘层和栅极；形成底栅型薄膜晶体管时，可以先在基板上形成栅极，然后在所述栅极上方依次形成栅极绝缘层、有源层、源极和漏极；形成底栅共面型薄膜晶体管时，先在基板上形成栅极，然后在所述栅极上方依次形成栅极绝缘层、源极和漏极、有源层。
作为本发明的第四个方面，提供一种显示装置，所述显示装置包括上述阵列基板。所述显示装置可以为：液晶面板、电子纸、OLED面板、手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
由于本发明的薄膜晶体管的稳定性提高，因此阵列基板或显示装置上不需要对薄膜晶体管进行遮光处理，简化产品结构和生产工艺。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (12)

1.一种薄膜晶体管，包括：
形成在基板上的栅极、有源层、源极和漏极，其特征在于，所述有源层包括具有掺杂离子的氧化物，所述掺杂离子具有p轨道电子排布结构，且所述掺杂离子的p轨道能级高于所述氧化物中氧离子的2p轨道能级，以使得有源层的价带顶高于所述氧化物中形成的氧空位的能级。
2.根据权利要求1所述的薄膜晶体管，其特征在于，所述掺杂离子包括：F-、N3-、S2-、Se2-、P3-中至少一种离子。
3.根据权利要求1所述的薄膜晶体管，其特征在于，所述氧化物包括：铟、镓、锌、铪、锡、铝中至少一种元素形成的金属氧化物。
4.根据权利要求3所述的薄膜晶体管，其特征在于，所述氧化物包括氧化锌，所述掺杂离子包括N3-或S2-，所述掺杂离子在所述掺杂离子与所述氧化物中氧离子的总量中所占的摩尔比在5％～80％之间。
5.一种阵列基板，包括薄膜晶体管，其特征在于，所述薄膜晶体管为权利要求1至4中任意一项所述的薄膜晶体管。
6.一种薄膜晶体管的制作方法，其特征在于，包括：
在基板上形成包括栅极的图形；
形成包括有源层的图形，所述有源层包括具有掺杂离子的氧化物，所述掺杂离子具有p轨道电子排布结构，且所述掺杂离子的p轨道能级高于所述氧化物中氧离子的2p轨道能级，以使得掺杂后有源层的价带顶高于所述氧化物中形成的氧空位的能级；
形成包括源极和漏极的图形。
7.根据权利要求6所述的制作方法，其特征在于，所述掺杂离子包括：F-、N3-、S2-、Se2-、P3-中至少一种离子。
8.根据权利要求6所述的制作方法，其特征在于，所述氧化物包括：铟、镓、锌、铪、锡、铝中至少一种元素形成的金属氧化物。
9.根据权利要求6所述的制作方法，其特征在于，形成包括有源层的图形的步骤包括：
向反应腔室内通入工艺气体以对靶材进行轰击，所述工艺气体包括氩气、含氧气体和提供掺杂离子的气体，所述提供掺杂离子的气体在所述工艺气体中所占的体积百分比为5％～95％。
10.根据权利要求9所述的制作方法，其特征在于，所述氧化物包括氧化锌，所述提供掺杂离子的气体包括含氮气体或含硫气体。
11.根据权利要求9所述的制作方法，其特征在于，所述氩气的流量在5～300sccm范围内，所述含氧气体的流量在5～200sccm范围内。
12.一种显示装置，其特征在于，所述显示装置包括权利要求5所述的阵列基板。
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