CN104241070A - Gas injection device used for inductively couple plasma chamber - Google Patents
Gas injection device used for inductively couple plasma chamber Download PDFInfo
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- CN104241070A CN104241070A CN201310252246.3A CN201310252246A CN104241070A CN 104241070 A CN104241070 A CN 104241070A CN 201310252246 A CN201310252246 A CN 201310252246A CN 104241070 A CN104241070 A CN 104241070A
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- gas
- pore
- injection apparatus
- gas injection
- inductively coupled
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Abstract
The invention discloses a gas injection device used for an inductively couple plasma chamber. The gas injection device is arranged at the top of the inductively couple plasma chamber, comprises a radio frequency window and a gas hole array arranged on the lower surface of the radio frequency window and further comprises a gas diffusion space arranged on the upper surface of the radio frequency window and communicated with the gas hole array. The gas tight plate gas diffusion space is used for sealing, a gas source is connected with a gas tight plate though a gas conveying pipeline to supply reaction gas to the gas diffusion space, and the gas hole array comprises multiple gas holes. A gas injector is omitted, the gas holes are directly formed in the radio frequency window, the gas conveying area is wider, gas conveying is evener, a better cleaning effect is achieved, a metal shielding layer is not needed, the number of working procedures is decreased, and the cost is lowered.
Description
Technical field
The present invention relates to semiconductor etching techniques field, particularly relate to a kind of gas injection apparatus for inductively coupled plasma chamber.
Background technology
In semiconductor etching processing procedure, plasma can be used to process wafer, and ICP(inductively couple plasma) inductively coupled plasma process is a kind of relatively conventional method, Fig. 1 is the structural representation of common inductively coupled plasma chamber, coil 2 connects high frequency electric source 4, vacuum pump 5 exhaust makes reaction chamber 100 become vacuum chamber, reacting gas is flowed to air injector 102 by gas pipeline 104 by gas source 3, air injector 102 is embedded in the RF window (RF window) 101 of pottery, air injector 102 is offered the pore 103 of some UNICOMs gas pipeline 104, reacting gas injects reaction chamber 100 by pore 103, high frequency electric source 4 pairs of coils 2 apply high frequency voltage, reacting gas generation ionization in reaction chamber, produce plasma, the wafer 1 be placed on slide holder 6 is processed.
In plasma ambient, in order to separation gas injector 102, need to arrange metal screen layer 105 in the surrounding of air injector 102, and the size of air injector 102 itself, also limit the size of gas conveyor zones, easily cause gas to carry uneven.
Summary of the invention
A kind of gas injection apparatus for inductively coupled plasma chamber provided by the invention, gas conveyor zones is wider, gas conveying evenly, obtain better cleaning performance, and without the need to using metal screen layer, save operation, reduce cost.
In order to achieve the above object, the invention provides a kind of gas injection apparatus for inductively coupled plasma chamber, this gas injection apparatus is arranged on inductively coupled plasma chamber roof, this inductively coupled plasma chamber comprises reaction chamber and is arranged on the gas injection apparatus at reaction chamber top, this gas injection apparatus connects gas source by gas pipeline, slide holder is provided with in reaction chamber, slide holder is for placing pending wafer, reaction chamber connects vacuum pump, above this inductively coupled plasma chamber or sidewall also coil is set, and the high frequency electric source of connecting coil, this gas injection apparatus comprises RF window and is arranged on the first pore array of RF window lower surface, this gas injection apparatus also comprises the first gas diffusion space of one and the described first pore array UNICOM being arranged on RF window upper surface, the first airtight pane is utilized to seal the first gas diffusion space, gas source supplies reacting gas through described first airtight pane to described first gas diffusion space by gas pipeline, this the first pore array comprises some pores.
Described RF window is circular planar disk-like, or is barrel-shaped, or is dome-shaped.
The lower surface of described RF window also comprises the second pore array around described first pore array, comprise a second gas diffusion space and the second airtight pane at RF window upper surface accordingly, gas source supplies reacting gas through described second airtight pane to the second gas diffusion space by gas pipeline.
The arrangement of described pore array is multilayer annular arrangement, or unordered free arrangement.
Jet direction and the below slide holder plane of described pore are 20
o~ 180
o.
In pore array, the diameter of each gas is identical, or not identical, same pore, and along its length, diameter is from top to bottom identical, or not identical.
The present invention also provides a kind of inductively coupled plasma chamber with gas injection apparatus, this inductively coupled plasma chamber comprises reaction chamber and is arranged on the gas injection apparatus at reaction chamber top, this gas injection apparatus connects gas source by gas pipeline, slide holder is provided with in reaction chamber, slide holder is for placing pending wafer, reaction chamber connects vacuum pump, above this inductively coupled plasma chamber or sidewall also coil is set, and the high frequency electric source of connecting coil;
This gas injection apparatus comprises RF window and is arranged on the pore array group of RF window lower surface, this gas injection apparatus also comprises the gas diffusion space of one and the described pore array group UNICOM being arranged on RF window upper surface, airtight pane is utilized to seal gas diffusion space, gas source supplies reacting gas through described airtight pane to described gas diffusion space by gas pipeline, this pore array group comprises some pore arrays, and this pore array comprises some pores.
Described RF window is circular planar disk-like, or is barrel-shaped, or is dome-shaped.
The distribution of described pore array group is the surface area of whole RF window, and the arrangement of described pore array group is the distribution of single pore array list district, or is the distribution of multiple pore array multi-region.
The arrangement of described pore array is multilayer annular arrangement, or unordered free arrangement.
Jet direction and the below slide holder plane of described pore are 20
o~ 180
o.
In pore array, the diameter of each pore is identical, or not identical, same pore, and along its length, diameter is from top to bottom identical, or not identical.
Present invention omits air injector, directly open pore on RF window, gas conveyor zones is wider, gas conveying evenly, obtain better cleaning performance, and without the need to using metal screen layer, save operation, reduce cost.
Accompanying drawing explanation
Fig. 1 is the structural representation of inductively coupled plasma chamber in background technology.
Fig. 2-4 is structural representations of the gas injection apparatus for inductively coupled plasma chamber provided by the invention.
Fig. 5-Figure 11 is the upward view of the gas injection apparatus for inductively coupled plasma chamber provided by the invention.
Embodiment
Following according to Fig. 2 ~ Figure 11, illustrate preferred embodiment of the present invention.
As shown in figs 2-4, the invention provides a kind of gas injection apparatus for inductively coupled plasma chamber, this gas injection apparatus is arranged on inductively coupled plasma chamber roof, this inductively coupled plasma chamber comprises reaction chamber 100 and is arranged on the gas injection apparatus at reaction chamber 100 top, this gas injection apparatus connects gas source 3 by gas pipeline 104, slide holder 6 is provided with in reaction chamber 100, slide holder 6 is for placing pending wafer, reaction chamber 100 connects vacuum pump 5, above this inductively coupled plasma chamber, coil 2 is also set with sidewall, and the high frequency electric source 4 of connecting coil 2.Wherein, reaction chamber sidewall adopts the metal materials such as aluminium, and electrical ground to shield the radio frequency electromagnetic field in reaction chamber.
This gas injection apparatus comprises RF window 101 and is arranged on the pore array group of RF window lower surface, this gas injection apparatus also comprises the gas diffusion space 107 of one and the described pore array group UNICOM being arranged on RF window upper surface, airtight pane 106 pairs of gas diffusion space 107 are utilized to seal, gas source 3 supplies reacting gas through described airtight pane 106 to described gas diffusion space 107 by gas pipeline 104, this pore array group comprises some pore arrays, and this pore array comprises some pores 103.Wherein, RF window 101 adopts ceramic material as aluminium oxide or silica, while sealed reaction chamber, enable radio frequency electromagnetic field penetrate RF window enter reaction chamber, and then make the reacting gas ionization passing into reaction chamber form plasma, airtight pane 106 adopts and the similar insulating ceramic materials of RF window, or insulating material of polymer realize airtight while can not affect radio-frequency electromagnetic field energy feed-in reaction chamber.
Described RF window 101 is circular planar disk-like (as shown in Figure 2), or for having barrel-shaped (as shown in Figure 3) of differing heights, or be dome-shaped (as shown in Figure 4).
The distribution of described pore array group is the surface area of whole RF window 101.
The arrangement of described pore array group can be the distribution of single pore array list district, also can be the distribution of multiple pore array multi-region.
The arrangement of pore array can be multilayer annular arrangement, also can be unordered free arrangement.
Described pore 103 is 20 with the angular range of horizontal direction
o~ 180
o.
The diameter range of described pore 103 is between several millimeter is to several centimetres.
In pore array, the diameter of each pore 103 can be identical, also can not be identical, can each pore 103 diameter each other not identical, also can according to Region dividing, hole diameter between each region is different, such as, if pore array is according to multilayer annular arrangement, diameter then between every layer of ring-type pore can be identical, and the hole diameter between circular layer with circular layer can not be identical.
Same pore 103, along its length, diameter from top to bottom can be identical, that is, the section of this pore 103 is rectangular.
Same pore 103, along its length, diameter from top to bottom can not be identical, can become large gradually by diameter from top to bottom, that is, section is trapezoidal, or can under diameter becomes gradually from top to bottom, that is, section is inverted trapezoidal, or can be other diameter variation patterns.
The present invention is perforate formation pore array on RF window directly, and does not use air injector 102, also just avoids and uses metal screen layer 105, provide cost savings.
The scope that pore array of the present invention is arranged is broader than using air injector 102, the area of whole RF window all can be offered pore 103, in use, can be according to actual needs, temporary transient unwanted pore 103 is blocked, until after need time, then this pore 103 to be dredged.
Be there is by reasonable layout on RF window the pore 103 at different-diameter and angle of inclination, charge flow rate can be regulated easily, obtain more uniform distribution of gas.
Coil 2 connects high frequency electric source 4, vacuum pump 5 exhaust makes reaction chamber 100 become vacuum chamber, reacting gas is flowed to the pore 103 be arranged on RF window by gas source 3 by gas pipeline 104, reacting gas injects reaction chamber 100 by pore 103, high frequency electric source 4 pairs of coils 2 apply high frequency voltage, reacting gas generation ionization in reaction chamber, produces plasma, processes the wafer 1 be placed on slide holder 6.
As shown in Figure 5, it is the first embodiment of the present invention, wherein, the arrangement of pore array group is the distribution of single pore array list district, and pore array is multilayer annular arrangement, the central axis of this pore array arranges pore 103, described pore array centered by central shaft, coaxial concentric annular arrays, the section of described pore 103 is rectangular, the hole diameter of each ring is identical, and pore 103 is 45 with the angle of horizontal direction
o, 90
owith 135
o.
As shown in Figure 6, be the second embodiment of the present invention, wherein, pore array group is multi-region distribution, this pore array group comprises two pore arrays, each pore array is multilayer annular arrangement, and the central axis of each pore array arranges pore 103, and each pore array is centered by central shaft, coaxial concentric annular arrays, the section of described pore 103 is rectangular, and the hole diameter of each ring is identical, and pore 103 is 45 with the angle of horizontal direction
o, 90
owith 135
o.
As shown in Figure 7, it is the third embodiment of the present invention, wherein, the arrangement of pore array group is the distribution of single pore array list district, and pore array is multilayer annular arrangement, and the central axis of this pore array arranges pore 103, described pore array SIMULATION OF ECCENTRIC ANNULAR arrangement, the section of described pore 103 is trapezoidal, and the hole diameter of each ring is identical, and pore 103 is 20 with the angle of horizontal direction
o, 60
o, 90
o, 120
owith 150
o.
As shown in Figure 8, it is the fourth embodiment of the present invention, wherein, the arrangement of pore array group is the distribution of single pore array list district, and pore array is multilayer annular arrangement, and the central axis of this pore array does not arrange pore, described pore array SIMULATION OF ECCENTRIC ANNULAR arrangement, the section of described pore 103 is rectangular, and the hole diameter of each ring is identical, and pore 103 is 45 with the angle of horizontal direction
o, 90
owith 135
o.
As shown in Figure 9, it is the fifth embodiment of the present invention, wherein, the arrangement of pore array group is the distribution of single pore array list district, and pore array is multilayer annular arrangement, the central axis of this pore array arranges pore 103, described pore array centered by central shaft, coaxial concentric annular arrays, the section of described pore 103 is trapezoidal, the hole diameter of each ring is not identical, and pore 103 is 30 with the angle of horizontal direction
o, 60
o, 90
o, 120
owith 150
o.
As shown in Figure 10, be the sixth embodiment of the present invention, wherein, the arrangement of pore array group is the distribution of single pore array list district, and pore array is lack of alignment, and the section of described pore 103 is trapezoidal, diameter between pore is not identical, and pore 103 is 20 with the angle of horizontal direction
o, 60
o, 90
o, 120
owith 160
o.
As shown in figure 11, it is the seventh embodiment of the present invention, wherein, pore array group is multi-region distribution, this pore array group comprises three pore arrays, and each pore array is lack of alignment, and the section of described pore 103 is trapezoidal, diameter between pore is not identical, and pore 103 is 20 with the angle of horizontal direction
o, 60
o, 90
o, 120
owith 160
o.
Although content of the present invention has done detailed introduction by above preferred embodiment, will be appreciated that above-mentioned description should not be considered to limitation of the present invention.After those skilled in the art have read foregoing, for multiple amendment of the present invention and substitute will be all apparent.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (12)
1. the gas injection apparatus for inductively coupled plasma chamber, this gas injection apparatus is arranged on inductively coupled plasma chamber roof, this inductively coupled plasma chamber comprises reaction chamber (100) and is arranged on the gas injection apparatus at reaction chamber (100) top, this gas injection apparatus connects gas source (3) by gas pipeline (104), slide holder (6) is provided with in reaction chamber (100), slide holder (6) is for placing pending wafer, reaction chamber (100) connects vacuum pump (5), above this inductively coupled plasma chamber or sidewall coil (2) is also set, and the high frequency electric source (4) of connecting coil (2), it is characterized in that,
This gas injection apparatus comprises RF window (101) and is arranged on the first pore array of RF window lower surface, this gas injection apparatus also comprises the first gas diffusion space (107) of one and the described first pore array UNICOM being arranged on RF window upper surface, the first airtight pane (106) is utilized to seal the first gas diffusion space (107), gas source (3) supplies reacting gas through described first airtight pane (106) to described first gas diffusion space (107) by gas pipeline (104), this the first pore array comprises some pores (103).
2., as claimed in claim 1 for the gas injection apparatus of inductively coupled plasma chamber, it is characterized in that, described RF window (101) is circular planar disk-like, or is barrel-shaped, or is dome-shaped.
3. as claimed in claim 2 for the gas injection apparatus of inductively coupled plasma chamber, it is characterized in that, the lower surface of described RF window (101) also comprises the second pore array around described first pore array, comprise a second gas diffusion space and the second airtight pane at RF window (101) upper surface accordingly, gas source supplies reacting gas through described second airtight pane to the second gas diffusion space by gas pipeline (104).
4., as claimed in claim 3 for the gas injection apparatus of inductively coupled plasma chamber, it is characterized in that, the arrangement of described pore array is multilayer annular arrangement, or unordered free arrangement.
5. as the gas injection apparatus for inductively coupled plasma chamber in claim 1-4 as described in any one, it is characterized in that, jet direction and the below slide holder plane of described pore (103) are 20
o~ 180
o.
6., as claimed in claim 5 for the gas injection apparatus of inductively coupled plasma chamber, it is characterized in that, in pore array, the diameter of each pore (103) is identical, or not identical, same pore (103), along its length, diameter is from top to bottom identical, or not identical.
7. one kind has the inductively coupled plasma chamber of gas injection apparatus, it is characterized in that, this inductively coupled plasma chamber comprises reaction chamber (100) and is arranged on the gas injection apparatus at reaction chamber (100) top, this gas injection apparatus connects gas source (3) by gas pipeline (104), slide holder (6) is provided with in reaction chamber (100), slide holder (6) is for placing pending wafer, reaction chamber (100) connects vacuum pump (5), above this inductively coupled plasma chamber or sidewall coil (2) is also set, and the high frequency electric source (4) of connecting coil (2),
This gas injection apparatus comprises RF window (101) and is arranged on the pore array group of RF window lower surface, this gas injection apparatus also comprises the gas diffusion space (107) of one and the described pore array group UNICOM being arranged on RF window upper surface, airtight pane (106) is utilized to seal gas diffusion space (107), gas source (3) supplies reacting gas through described airtight pane (106) to described gas diffusion space (107) by gas pipeline (104), this pore array group comprises some pore arrays, this pore array comprises some pores (103).
8. have the inductively coupled plasma chamber of gas injection apparatus as claimed in claim 7, it is characterized in that, described RF window (101) is circular planar disk-like, or is barrel-shaped, or is dome-shaped.
9. there is the inductively coupled plasma chamber of gas injection apparatus as claimed in claim 8, it is characterized in that, the distribution of described pore array group is the surface area of whole RF window (101), the arrangement of described pore array group is the distribution of single pore array list district, or is the distribution of multiple pore array multi-region.
10. have the inductively coupled plasma chamber of gas injection apparatus as claimed in claim 9, it is characterized in that, the arrangement of described pore array is multilayer annular arrangement, or unordered free arrangement.
11., as the inductively coupled plasma chamber with gas injection apparatus in claim 7-10 as described in any one, is characterized in that, jet direction and the below slide holder plane of described pore (103) are 20
o~ 180
o.
The 12. inductively coupled plasma chambers as claimed in claim 11 with gas injection apparatus, it is characterized in that, in pore array, the diameter of each pore (103) is identical, or it is not identical, same pore (103), along its length, diameter is from top to bottom identical, or not identical.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310252246.3A CN104241070A (en) | 2013-06-24 | 2013-06-24 | Gas injection device used for inductively couple plasma chamber |
| TW103121315A TWI627669B (en) | 2013-06-24 | 2014-06-20 | Gas injection device for inductively coupled plasma chamber |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310252246.3A CN104241070A (en) | 2013-06-24 | 2013-06-24 | Gas injection device used for inductively couple plasma chamber |
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|---|---|
| CN104241070A true CN104241070A (en) | 2014-12-24 |
Family
ID=52228938
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310252246.3A Pending CN104241070A (en) | 2013-06-24 | 2013-06-24 | Gas injection device used for inductively couple plasma chamber |
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| TW (1) | TWI627669B (en) |
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| CN107527782A (en) * | 2016-06-17 | 2017-12-29 | 三星电子株式会社 | Plasma Processing Apparatus |
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| CN109037103A (en) * | 2018-07-23 | 2018-12-18 | 华进半导体封装先导技术研发中心有限公司 | A kind of semiconductor equipment and technique using atomization cleaning wafer surface |
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| CN109994355A (en) * | 2017-12-29 | 2019-07-09 | 中微半导体设备(上海)股份有限公司 | A kind of plasma reactor with low frequency RF power profile adjustment function |
| US12062524B2 (en) | 2017-07-03 | 2024-08-13 | Advanced Micro-Fabrication Equipment Inc. China | Plasma reactor having a variable coupling of low frequency RF power to an annular electrode |
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Also Published As
| Publication number | Publication date |
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| TW201501196A (en) | 2015-01-01 |
| TWI627669B (en) | 2018-06-21 |
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Application publication date: 20141224 |