CN102355792B - Improve the inductively coupled plasma device of plasma uniformity and efficiency - Google Patents
Improve the inductively coupled plasma device of plasma uniformity and efficiency Download PDFInfo
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- CN102355792B CN102355792B CN201110319250.8A CN201110319250A CN102355792B CN 102355792 B CN102355792 B CN 102355792B CN 201110319250 A CN201110319250 A CN 201110319250A CN 102355792 B CN102355792 B CN 102355792B
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Abstract
The invention provides a kind of inductively coupled plasma reactor, wherein, comprise closure casing, the insulating material window that at least part of top board of wherein said closure casing is made up of insulating material.Substrate supporting device, is arranged at the below of the described insulating material window in described closure casing.Radio-frequency power emitter is positioned at above described insulating material window, enters into described closure casing to launch radio-frequency power through described insulating material window.Multiple air injector is evenly distributed on above described substrate supporting device, to provide process gas to described closure casing.Ring baffle, is arranged in described closure casing and the top of described substrate supporting device and the below of described multiple air injector, to guide the flowing of described process gas.
Description
Technical field
The present invention relates to plasma reactor, particularly relate to the design of the homogeneous distribution of gas in inductance coupling high reactor.
Background technology
Plasma reactor or reaction chamber are known in the art, and are widely used in semiconductor integrated circuit, flat-panel monitor, and light-emitting diode (LED), in the process industry of solar cell etc.Usually a radio-frequency power supply can be applied to produce and to maintain plasma in reaction chamber in plasma chamber.Wherein, have many different modes to apply radio-frequency power, the design of each different modes will cause different characteristics, and such as efficiency, plasma dissociate, homogeneity etc.Wherein, a kind of design is inductance coupling high (ICP) plasma chamber.
In inductively coupled plasma process chamber, one normally coiled type antenna be used in reaction chamber, launch radio-frequency (RF) energy.In order to make the radio-frequency power from antenna be coupled in reaction chamber, place an insulating material window at antenna place.Reaction chamber can process various substrate, such as Silicon Wafer etc., and substrate is fixed on chuck, and plasma produces above substrate.Therefore, antenna is placed on above reactor top board, makes reaction chamber top board be made up or comprise an insulating material window of insulating material.
In plasma processing chamber, various gas is injected in reaction chamber, to make the chemical reaction between ion and substrate and/or physical action can be used to form various feature structure on the substrate, such as etches, deposits etc.In many technological processes, a very important index is the processing homogeneity of inside wafer.Namely, a technological process acting on substrate center region should be identical with the technological process acting on substrate edge region or highly close.Therefore, such as, when performing technological process, the etching rate in crystal circle center region should be identical with the etching rate in crystal round fringes region.
A parameter contributing to obtaining better process uniformity is equally distributed process gas in reaction chamber.Obtain such homogeneity, many reaction chamber designs adopt the gas spray be arranged on above wafer, to inject process gas uniformly.But, as mentioned above, inductance coupling high (ICP) reaction chamber top board must comprise one make radio-frequency power from antenna transmission to reaction chamber in insulation windows.Therefore, do not reserve the function injected to realize its gas uniform in corresponding space to gas spray in the structure of ICP.
Fig. 1 shows the sectional view of existing inductance coupling high reaction chamber design.ICP reaction chamber 100 comprises metal sidewall 105 substantially cylindrically and the top board 107 that insulate, and forms the airtight space that can be evacuated device 125 and vacuumize.Pedestal 110 supports chuck 115, and described chuck 115 supports pending substrate 120.Radio-frequency power from radio frequency power source 145 is applied to the antenna 140 in coiled type.Process gas from source of the gas 150 is supplied in reaction chamber by pipeline 155, to light and to maintain plasma, and processes substrate 120 thus.In standard inductor coupled reaction chamber, gas is together injected by one of the injector/shower nozzle 130 and middle shower nozzle 135 around reaction chamber or both and is fed in vacuum tank.
As can be seen from Figure 1, from the gas of peripheral shower nozzle 130 by the surface of extracting 120 in a large number out.Therefore, may realize the process to crystal round fringes region from a large amount of gases of peripheral shower nozzle 130 injection, but almost not have the central area that can reach wafer 120, this can cause inhomogeneity.On the contrary, a large amount of gases that central jets 135 injects concentrate on crystal circle center and do not arrive fringe region, also can cause inhomogeneity.
Therefore, need in the industry the design of a kind of improvement inductance coupling high reaction chamber, the distribution of gas in reaction chamber can be optimized with the homogeneity of processing technology.
Summary of the invention
Summary of the invention of the present invention only provides one to the basic comprehension of part aspect of the present invention and feature.It is not to extensive overview ot of the present invention, neither be used for particularly pointing out key element of the present invention or signal scope of invention.Its unique object be simplify present concepts more of the present invention, for follow-up description the present invention in detail makes place mat.
According to an aspect of the present invention, provide a kind of plasma reactor, it comprises closure casing, insulation windows, be arranged on the radio-frequency antenna above insulation windows, multiple air injector (gasinjectors), to air feed in described closure casing, is arranged at the baffle plate in described closure casing, and it is for limiting or guiding from the gas flow air injector.
According to an aspect of the present invention, provide an inductively coupled plasma reactor, wherein, comprise closure casing, insulating material window of formation at least partially of wherein said closure casing top board.Substrate supporting device is arranged in described closure casing and the below of described insulating material window.Radio-frequency power emitter is arranged on described insulating material window, to launch radio-frequency power and to make it pass described insulating material window in closure casing.Multiple air injector is evenly distributed on above described substrate supporting device, to provide process gas in described closure casing.Be arranged at the ring baffle in closure casing, it is positioned at above described substrate supporting device and below multiple air injector, flows with direct process gas.According to another aspect of the present invention, described baffle plate can be made by by conductor or insulating material.Such as baffle plate can by anodized aluminium, pottery, and quartz etc. is made.
According to another aspect of the present invention, baffle plate can be the ring plate of band central opening.Described baffle plate also can comprise the secondary openings being distributed in central opening surrounding.Described baffle plate can comprise the extension extended from described central opening place.Described extension can be columnar also can be conical, etc.Described baffle plate accessible site enters a radio-frequency antenna.Described baffle plate can be this radio-frequency antenna integrated in insulating material, and the one side of baffle plate also can be that the radio-frequency (RF) energy that the radio-frequency power emitter in insulation windows or radio-frequency antenna are produced that conductor material is made cannot pass this conductor layer.Described baffle plate can move up and down at described substrate supporting device upper vertical, is thus changed the gap between substrate.
According to a further aspect of the invention, provide a kind of method manufacturing semiconductor device on substrate, comprise and place on the substrate supporting device of substrate in plasma reactor, wherein plasma reactor comprises closure casing, it comprises columniform sidewall and top board, the formation at least partially one insulating material window of its top board, be positioned at the radiofrequency launcher above described insulating material window, it arrives in described closure casing for launching radio-frequency power and making it pass described insulating material window, multiple above substrate equally distributed air injector; In closure casing, place ring baffle, to be positioned at above substrate supporting device to make described baffle plate and the below of multiple air injector, thus between described baffle plate and described substrate a direct formation gap; Reacting gas is provided toward air injector; Apply radio-frequency power to radiofrequency launcher.
Accompanying drawing explanation
Accompanying drawing, as a part for specification of the present invention, illustrates embodiments of the invention, and explains together with specification and principle of the present invention is described.The principal character of citing embodiment diagrammatically explained by accompanying drawing.Accompanying drawing is not be not used in relative size in key diagram between element for describing all features of practical embodiments yet, neither draw in proportion.
Fig. 1 is the sectional view of the inductance coupling high reaction chamber of prior art;
Fig. 2 is the sectional view of the inductance coupling high reaction chamber of the embodiment of the present invention;
Fig. 3 is the sectional view of the inductance coupling high reaction chamber of second embodiment of the invention;
Fig. 4 is the sectional view of third embodiment of the invention inductance coupling high reaction chamber;
Fig. 5 is the sectional view of fourth embodiment of the invention inductance coupling high reaction chamber;
Fig. 6 is the sectional view of fifth embodiment of the invention inductance coupling high reaction chamber.
Wherein, same or analogous Reference numeral represents same or analogous device (module).
Embodiment
The embodiment that the present invention relates to inductively coupled plasma chamber improves homogeneity, particularly the uniformity of distribution of gas.With the addition of preinstall apparatus in reaction chamber in the embodiment of the present invention makes effluent air in shower nozzle be rebooted flow direction, to improve the distribution of gas in reaction chamber, thus the homogeneity on wafer is improved.
Hereafter composition graphs 2 pairs of one embodiment of the present of invention are described in detail.Fig. 2 illustrates plasma treatment appts 200 according to an embodiment of the invention.Except 2XX series of figures mark, the key element corresponded in Fig. 1 shown in Fig. 2 has identical Reference numeral.Should be appreciated that reaction chamber device 200 is wherein only exemplary, described 200 devices in fact also can comprise less or extra parts, and the arrangement of parts also can be different from shown in Fig. 2.
Fig. 2 shows the sectional view of ICP reaction chamber according to a first embodiment of the present invention, and it performs the feature of gas controlled flow.ICP reaction chamber 200 comprises metal sidewall 205 and insulation top board 207, forms an airtight vacuum sealing housing, and is vacuumized by vacuum pumping pump 225.Described insulation top board 207 only exemplarily, also can adopt other top board pattern, and such as dome shape, with the metal top plate etc. of insulating material window.Pedestal 210 supports chuck 215, described chuck is placed pending substrate 220.Bias power is applied on described chuck 215, but owing to haveing nothing to do with the embodiment of the present invention disclosed, not shown in fig. 2.The radio-frequency power of described radio-frequency power supply 245 is applied to antenna 240, and this antenna is coiled type substantially.
Process gas is supplied in reaction chamber from source of the gas 250 through pipeline 225, to light and to maintain plasma, thus processes substrate 220.In the present embodiment, gas is supplied in vacuum space by peripheral injector or shower nozzle 230, but extra gas also optionally can inject reaction chamber from central jets 235.If gas is supplied from injector 230 and shower nozzle 235 simultaneously, each gas flow can independently control.These settings for injecting gas any can be described as plasma gas injector.In fig. 2, baffle plate 270 is arranged in reaction chamber with the gas flow that restriction and/or guiding are distributed from gas tip 230.With reference to the accompanying drawings shown in mark, baffle plate is the disc of middle with hole or opening substantially in the above-described embodiments.Described baffle plate to be positioned at below gas tip but above substrate position.Like this, gas is restricted to flow to substrate downwards before and flows in the middle of reaction chamber further, as indicated by a dashed arrow in the figure.
Normally, described baffle plate 270 can be made up of metal material, as anodized aluminium.Manufacture baffle plate with metal material can be conducive to limiting the plasma above described baffle plate, because from the propagation by described baffle of the radio-frequency (RF) energy of coil.On the other hand, described baffle plate 270 also can be made up of insulating material, such as pottery or quartzy.In the embodiment adopting isolation baffle plate, radio frequency (RF) energy from coil can pass described baffle plate, make plasma can be maintained at (dotted portion display) below described baffle plate, it depends on the gas flow arrived below described baffle plate.
Under certain applications scene, restriction gas flow is further needed to make gas have the more time to be positioned at above crystal circle center position, to ensure that obtaining enough plasmas above whole wafer dissociates.The embodiment having benefited from above-mentioned application is shown in Figure 3.Except being numbered the Reference numeral of 3XX series, key element identical in Fig. 3 and Fig. 2 has identical Reference numeral.As shown in Reference numeral in Fig. 3 and Fig. 3, the baffle plate 372 of the present embodiment has discoidal profile and has an annular vertical direction extension 373, basic in a drum.Form a gap 374 between vertical stretch and substrate, can edge be flow to by this gap gas, such as flow in cavity the region exceeding substrate periphery.The size in described gap 374 determines the flowing of substrate overhead gas and gas and flows through time needed for described substrate, is dissociated by plasma to make gas.
In the embodiment shown in fig. 3, the size of the diameter d of annular opening can be identical with substrate diameter, or be greater than or less than described substrate diameter.The diameter of described annular opening depends on required gas flow restriction.Meanwhile, because vertical direction annular extension is set to circular disc substrate rectangular, the opening diameter of the opening diameter and annular disk 372 of described annular extension 373 itself is identical.
On the other hand, sometimes need restriction gas to flow out to substrate from annulus, but once gas flows to described substrate direction, sometimes also need strengthening gas in the horizontal direction to the flowing of cavity periphery.A design having benefited from above-mentioned setting is illustrated by accompanying drawing 4.In the diagram, baffle plate 475 is made up of a ring-like portion and a conical extension 476, and described conical extension 476 has upper shed diameter d, and it is less than the under shed diameter d of described conical extension 476 ', wherein said under shed is near substrate.Be provided with under shed to define gap 477, gas passes through this gap in the horizontal direction towards reaction chamber wall flow.Form included angle between the sidewall of conical section and ring part, wherein this included angle is less than 90 degree.
In above-mentioned any embodiment, sometimes may need to allow portion gas flow out before arrival baffle center opening.It is revise part embodiment illustrated in fig. 2 that Fig. 5 shows the 4th embodiment.As shown in Figure 5, baffle plate 578 is with a central opening dish configuration, and some is similar to the baffle plate 272 shown in Fig. 2.The diameter of described middle opening can identical or different with Fig. 2.In addition, auxiliary/secondary openings 589 is arranged on described central opening limit, to make portion gas in the front lower leakage of the described central opening of arrival.The diameter of described secondary openings can be less than the diameter of described central opening.Described secondary openings can be applied to aforementioned any embodiment, and evenly can arrange at central opening surrounding.Such as, Fig. 5 shows and the baffle plate 558 improved like the flapper type in Fig. 3, except with the addition of the arrangement of secondary openings around extension, to make gas in the arrival front lower leakage of central opening and to flow to described extension.
In the above-described embodiments, described baffle plate is used for the flowing of control treatment gas.In addition, described baffle plate also can be used for controlling plasma passively.Usually, plasma can be diffused into reaction chamber bottom by the hole on described baffle plate.Described hole is larger, and described plasma concentration is higher.By changing quantity and the position of described hole, the plasma concentration distributed in the reactor chamber also can change simultaneously.Described baffle plate also can be used for plasma described in ACTIVE CONTROL.Fig. 6 shows above-described embodiment.
In the embodiment shown in fig. 6, baffle plate 680 is for ACTIVE CONTROL plasma.As shown in the figure, secondary antenna 682 embeds in described baffle plate 680.Described auxiliary antenna can be coiled type.As shown in the figure, described antenna can be (being shown in broken lines in figure) of one-turn coil, but other also can be adopted to design.Described auxiliary antenna can equally adopt power supply 645 (shown in dotted arrow) power supply with main antenna, or adopts a different radio-frequency power supply 647 to power.No matter adopt what Power supply, the power magnitude (amplitude) that is applied on described auxiliary antenna 682 is the external control independent of the power being applied to main antenna 640.
According to above-described embodiment, described baffle plate 680 is made up of insulating material, and described coil embeds this insulating material.Such as, baffle plate 680 can be made up of the ceramic material sintering, and wherein wire coil embeds described ceramic material.So, the plasma above and below baffle plate can be put on from the power of secondary coil.On the other hand, according to another embodiment, described baffle plate 680 can be also that conductor material is made by being simultaneously insulating material another side, with the wherein one side making radio-frequency power can only be applied to baffle plate.Such as, the upper strata of described baffle plate 680 can be made up of conductor material, to be only applied in the plasma below described baffle plate from the radio-frequency power of secondary coil 682.This design can be illustrated by Fig. 6, its coil 682 embeds ceramic disk 685, make the radio-frequency (RF) energy produced in described coil can be applied to plasma below described baffle plate, but conductor disc 683 is arranged at above described ceramic disk 685, the radio-frequency (RF) energy from described coil 682 cannot be put on above described baffle plate.In addition, this project organization also can stop that the radio-frequency (RF) energy that main coil 640 produces puts on below described baffle plate 680.Therefore, the radio-frequency (RF) energy of described main antenna 640 can be adjusted (as frequency, power etc.) to control the plasma above described baffle plate 680, and the radio-frequency (RF) energy adjustable of secondary antenna 680 controls the plasma below described baffle plate simultaneously.
Aforementioned any embodiment all can be made a nearly step and improve, and makes baffle plate become moveable.This design is illustrated by Fig. 6.Stepping motor 690 in Fig. 6 is coupled to baffle plate 680 by such as rack and pinion and so on mechanism, described stepping motor 690 can be energized and vertically drive described baffle plate to move up and down, and the space between described baffle plate 680 and substrate 620 can be adjusted.
Should be appreciated that, the handling process that the present invention mentions and technology are not limited to the specific device mentioned, and also can be the combinations realizing multiple parts of the present invention.Further, various types of common apparatus also can be used in the technology of the present invention.The invention describes multiple specific embodiment, these embodiments describe content of the present invention all in all fields, and it is not the restriction to content of the present invention.It will be appreciated by those skilled in the art that except given example of the present invention, also have much different combinations to be suitable for the present invention.
In addition, those skilled in the art, by the understanding of specification of the present invention with to practice of the present invention, can easily expect other implementation.In multiple embodiment described herein, various aspects and/or parts can be adopted separately or are combined employing.It is emphasized that specification and embodiment are only as an example, the scope of reality of the present invention and thinking are defined by claim below.
Claims (13)
1. an inductively coupled plasma device, wherein, comprising:
Closure casing, it comprises top board, and described top board forms insulating material window;
Substrate supporting device, it is arranged at below the described insulating material window in described closure casing;
Radio-frequency power emitter, it is arranged at above described insulating material window, to launch radio-frequency (RF) energy in described closure casing;
Air injector, it is for supplying process gas in described closure casing;
Baffle plate, it is arranged at above described closed housing sidewall and described substrate supporting device and below described air injector, to limit the flowing of described process gas, described baffle plate is the disc with middle opening;
The space internal disintegration that described process gas is formed between described baffle plate and described insulating material window forms plasma; Plasma described in described baffle directs is diffused into described middle opening in described space, is diffused into above described substrate supporting device downwards through described middle opening, carries out plasma treatment to the substrate that described bracing or strutting arrangement supports.
2. inductively coupled plasma device according to claim 1, is characterized in that, described baffle plate comprises the extension of the vertical direction that extends from described central closing further.
3. inductively coupled plasma device according to claim 1, is characterized in that, described baffle plate comprises one further from described central closing to the conical extension of downward-extension.
4. inductively coupled plasma device according to claim 1, is characterized in that, described baffle plate is made up of insulating material.
5. inductively coupled plasma device according to claim 4, is characterized in that, described insulating material comprises pottery or quartz.
6. inductively coupled plasma device according to claim 1, is characterized in that, described baffle plate comprises the secondary openings be evenly distributed on around described middle opening further.
7. inductively coupled plasma device according to claim 1, is characterized in that, described baffle plate is made up of conductor material.
8. inductively coupled plasma device according to claim 1, is characterized in that, described baffle plate can vertically move.
9. inductively coupled plasma device according to claim 1, is characterized in that, described air injector comprises the central jets that is arranged at described top board central area further.
10. an inductively coupled plasma device, wherein, comprising:
Closure casing, it comprises cylindrical side wall and top board, and wherein a part at least described top board forms insulating material window;
Substrate supporting device, is arranged at below the described insulating material window in described closure casing;
Radio-frequency power emitter, is arranged at above described insulating material window, enters in described closure casing to launch radio-frequency power through described insulating material window;
Multiple air injector, it is evenly distributed on above described substrate supporting device, to provide process gas in described closure casing; And
The baffle plate of annular, be arranged at the below with multiple air injector above described cylindrical side wall and described substrate supporting device, with the center flow of direct process gas to described closure casing, described baffle plate comprises and extends downwardly into the extension of described substrate supporting device from described central opening, to form a gap between described baffle plate and substrate with the disk of central opening and one; Plasma is formed in the space that described process gas is formed between described baffle plate and described insulating material window, described in described baffle directs, plasma diffusion is to described central opening, be diffused into above described substrate supporting device through described central opening, plasma treatment is carried out to the substrate that described bracing or strutting arrangement supports; Described extension limits described process gas flow further, makes described process gas have the more time to be positioned at above substrate and realizes plasma dissociation.
11. inductively coupled plasma devices according to claim 10, is characterized in that, described baffle plate is by anodized aluminium, and pottery, arbitrary in quartz makes.
12. inductively coupled plasma devices according to claim 10, it is characterized in that, described extension comprises cylindrical or conical.
13. inductively coupled plasma devices according to claim 10, is characterized in that,
The width in described gap can adjust.
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110319250.8A CN102355792B (en) | 2011-10-19 | 2011-10-19 | Improve the inductively coupled plasma device of plasma uniformity and efficiency |
| US13/337,248 US9095038B2 (en) | 2011-10-19 | 2011-12-26 | ICP source design for plasma uniformity and efficiency enhancement |
| TW100149971A TW201318024A (en) | 2011-10-19 | 2011-12-30 | Electromagnetic coupling plasma device capable of improving uniformity and efficiency of plasma |
| KR1020120112872A KR20130043062A (en) | 2011-10-19 | 2012-10-11 | Inductively-coupled plasma reactor for plasma uniformity and efficiency enhancement and method for manufacturing semiconductor substrate using the device |
| JP2012231630A JP5607699B2 (en) | 2011-10-19 | 2012-10-19 | Design of an inductively coupled plasma source to improve plasma uniformity and effectiveness. |
| US14/066,631 US9431216B2 (en) | 2011-10-19 | 2013-10-29 | ICP source design for plasma uniformity and efficiency enhancement |
| KR1020150127674A KR20150108344A (en) | 2011-10-19 | 2015-09-09 | Inductively-coupled plasma reactor for plasma uniformity and efficiency enhancement and method for manufacturing semiconductor substrate using the device |
| US15/207,495 US20160322205A1 (en) | 2011-10-19 | 2016-07-11 | Icp source design for plasma uniformity and efficiency enhancement |
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| CN201110319250.8A CN102355792B (en) | 2011-10-19 | 2011-10-19 | Improve the inductively coupled plasma device of plasma uniformity and efficiency |
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| CN103796413B (en) * | 2012-11-01 | 2017-05-03 | 中微半导体设备(上海)有限公司 | Plasma reactor and method for manufacturing semiconductor substrate |
| CN103874314B (en) * | 2012-12-17 | 2016-10-05 | 中微半导体设备(上海)有限公司 | A kind of inductively coupled plasma device |
| CN103997843B (en) * | 2013-02-17 | 2017-02-15 | 中微半导体设备(上海)有限公司 | Plasma reactor improving gas distribution |
| CN105742203B (en) * | 2014-12-10 | 2019-08-13 | 中微半导体设备(上海)股份有限公司 | A kind of device changing gas flow patterns and wafer processing method and equipment |
| CN104505326A (en) * | 2014-12-19 | 2015-04-08 | 中国科学院嘉兴微电子仪器与设备工程中心 | Chamber structure applied to plasma equipment and plasma equipment |
| CN104485272A (en) * | 2014-12-19 | 2015-04-01 | 中国科学院嘉兴微电子仪器与设备工程中心 | Plasma equipment and chamber structure applied to plasma equipment |
| CN106920728B (en) * | 2015-12-25 | 2019-01-29 | 中微半导体设备(上海)有限公司 | Plasma processing apparatus and its crystal round fringes processing component |
| CN107306473B (en) * | 2016-04-25 | 2019-04-30 | 中微半导体设备(上海)股份有限公司 | A kind of semiconductor processing device and the method for handling substrate |
| CN106756868B (en) * | 2016-11-10 | 2019-07-09 | 北京师范大学 | A method of improving doped diamond-like film layer quality |
| KR101856689B1 (en) * | 2017-10-23 | 2018-05-14 | 주식회사 기가레인 | Substrate processing apparatus including an elevating induced part |
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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |