CN104152993A - Method capable of eliminating measurement of melting height of seed crystals for polycrystalline silicon ingot casting and polycrystalline silicon ingot casting furnace - Google Patents
Method capable of eliminating measurement of melting height of seed crystals for polycrystalline silicon ingot casting and polycrystalline silicon ingot casting furnace Download PDFInfo
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- CN104152993A CN104152993A CN201410384074.XA CN201410384074A CN104152993A CN 104152993 A CN104152993 A CN 104152993A CN 201410384074 A CN201410384074 A CN 201410384074A CN 104152993 A CN104152993 A CN 104152993A
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Abstract
The invention provides a method capable of eliminating the measurement of melting height of seed crystals for polycrystalline silicon ingot casting. The method comprises the following steps: (1) arranging a layer of seed crystals at the bottom of a crucible; (2) laying a layer of broken silicon material on the surface of the seed crystals to form a heat insulating layer, wherein the thermal conductivity of the heat insulating layer is lower than that of the seed crystals; (3) loading a silicon raw material onto the surface of the heat insulating layer, controlling a thermal field and a process to melt the silicon raw material from top to bottom, and monitoring a temperature signal of the bottom of the crucible, wherein the temperature signal is the temperature of the bottom of the crucible and a change rate of the temperature of the bottom of the crucible, or a change rate of the change rate of the temperature of the bottom of the crucible; (4) judging the melting height of the seed crystals according to the acquired temperature signal, and when the temperature signal has an abrupt rising change point, determining that the seed crystals start being molten, and controlling the thermal field and the process to enter a crystal growth stage. According to the method, the problem of testing inaccuracy during the measurement of the melting height of the seed crystals by a quartz rod is solved, the use of the quartz rod for continuous measurement is avoided, and the method is convenient to operate and low in cost.
Description
Technical field
The present invention relates to photovoltaic silicon wafer production technical field, be specifically related to a kind of method and polycrystalline silicon ingot or purifying furnace of exempting to measure polycrystalline silicon ingot casting seed crystal fusing height.
Background technology
At present, in the solar energy power generating industry developing rapidly, most widely used is crystal silicon solar energy battery, and crystal silicon solar energy battery is mainly made up of pulling of crystals silicon chip (CZ) or ingot casting polysilicon chip (DSS).Wherein, pulling of silicon single crystal photoelectric transformation efficiency is higher, but production capacity is low, production cost is high; Pulling of silicon single crystal relatively, ingot casting polysilicon chip production capacity is high, cost is low, but photoelectric transformation efficiency is lower.
In order to improve the efficiency of ingot casting polysilicon chip, those skilled in the art combine the advantage separately of above two kinds of technology, have proposed to have the ingot casting growing technology of seed crystal; For example crucible bottom paving silicon single crystal spreads broken silicon material or the broken silicon wafers efficient polycrystalline technology as seed crystal as ingot casting class single crystal technology, the crucible bottom of seed crystal, i.e. production class monocrystalline and efficient polycrystalline all need to be laid one deck seed crystal in crucible bottom, then controlling silicon raw material slowly melts from top to bottom, measure and be melted to behind seed crystal position with quartz pushrod, just enter into the long brilliant stage.Have the ingot casting growing technology of seed crystal all to need to adopt quartz pushrod to carry out continuously measured material height and judge whether to arrive seed crystal position, this method has following shortcoming: the working strength that 1, has increased operator; 2, be easy to cause quartz pushrod flexural deformation at hot stage with quartz pushrod measurement, even test is with great difficulty disconnected not excellent; Cause like this testing inaccurate, thereby or cause seed crystal to be melted completely can not growing class monocrystalline or efficient polysilicon chip, or quartz pushrod falls to cause in silicon ingot whole silicon ingot to occur that crackle scraps, and loses larger; 3, quartz pushrod belongs to consumptive material, price, and what purity was low also needs up to a hundred yuan, increases production cost.Therefore, to those skilled in the art, be badly in need of providing a kind of method without use quartz pushrod measurement polycrystalline silicon ingot casting seed crystal fusing height that accuracy is high, cost is low and easy and simple to handle.
Summary of the invention
For addressing the above problem, the invention provides a kind of method of exempting to measure polycrystalline silicon ingot casting seed crystal fusing height, lay the broken silicon material of one deck in the seed crystal face of laying and form thermofin, controlling thermal field and technique melts the silicon raw material on thermofin surface from top to bottom, and monitor the temperature signal of crucible bottom, according to the temperature signal getting, can judge the height of seed crystal fusing; In the time there is the catastrophe point of rising suddenly in temperature signal, represent to be melted to the height of seed crystal, now control thermal field and technique, enter the long brilliant stage; The method has solved quartz pushrod while measuring seed crystal fusing height with quartz pushrod and has occurred that hot mastication bending causes testing inaccurate problem, and without carrying out continuously measured with quartz pushrod, easy and simple to handle, cost is low.The present invention also provides a kind of polycrystalline silicon ingot or purifying furnace.
First aspect present invention provides a kind of method of exempting to measure polycrystalline silicon ingot casting seed crystal fusing height, comprises the following steps:
(1) in crucible bottom, one deck seed crystal is set;
(2) lay the broken silicon material of one deck in described seed crystal face and form thermofin, the thermal conductivity of described thermofin is lower than the thermal conductivity of described seed crystal;
(3) pack silicon raw material on described thermofin surface, control thermal field and technique, described silicon raw material is melted from top to bottom, and monitor the temperature signal of described crucible bottom; Described temperature signal is described crucible bottom temperature, described crucible bottom rate of temperature change, or the velocity of variation of described crucible bottom rate of temperature change;
(4), according to the described temperature signal getting, can judge the height of described seed crystal fusing; In the time there is the catastrophe point of rising suddenly in described temperature signal, represent to be melted to the height of described seed crystal, now control thermal field and technique, enter the long brilliant stage.
The present invention judges that the principle of the height of seed crystal fusing is: when controlling thermal field and technique, silicon raw material is melted from top to bottom, when the silicon liquid forming after the fusing of silicon raw material does not also arrive seed crystal position, many owing to forming hole between the particle of broken silicon material of thermofin, make the thermal conductivity of thermofin lower than the thermal conductivity of seed crystal, cause the temperature signal of crucible bottom to change little; Along with thermofin slowly melts, the heat of silicon liquid is also slowly delivered on seed crystal, at this moment the temperature signal of crucible bottom slowly increases, until thermofin melts completely, silicon liquid contacts completely with seed crystal, there is the process rising suddenly in the temperature signal of crucible bottom, occurs catastrophe point, therefore utilizes crucible bottom to conduct heat and can judge the height of seed crystal fusing.The method avoids adopting quartz pushrod to carry out continuously measured, only need monitor the temperature signal of crucible bottom, in the time there is catastrophe point in temperature signal, can judge and be melted to seed crystal position, judge by rule of thumb without manpower, easy and simple to handle, detected result is accurate, be convenient to the fusing to seed crystal and highly arrange, cost is also lower, can realize automatic production in conjunction with automation system.
Preferably, seed crystal described in step (1) is silicon single crystal, silica flour, silicon carbide, quartz sand or primary polysilicon.
Preferably, the silicon single crystal that is 0.5cm～3cm in crucible bottom laying a layer thickness in step (1) or primary polysilicon are as seed crystal.
Preferably, the silicon single crystal that is 2cm～3cm in crucible bottom laying a layer thickness in step (1) is as seed crystal.
During using silicon single crystal as seed crystal, the thickness of silicon single crystal should be best more than 2cm, because silicon liquid temp has an inertia in reduction process, although judge and be melted to seed of single crystal silicon position, if but because seed of single crystal silicon is too thin, temperature cannot reduce immediately, easily causes seed of single crystal silicon to melt completely or remain little problem occurring.And use silicon single crystal to be the thickness of remaining seed crystal as seed crystal production class monocrystalline and the difference that uses primary polysilicon to produce efficient polysilicon as seed crystal, the thickness of remaining seed of single crystal silicon has impact to subsequent growth class monocrystalline quality out, because the words that remaining seed of single crystal silicon is too thin, seed of single crystal silicon itself more easily produces dislocation, thereby affects the quality of the class monocrystalline silicon piece of subsequent production.
Preferably, the silica flour, silicon carbide or the quartz sand that in step (1), are 0.1cm～0.5cm in crucible bottom brushing a layer thickness are as seed crystal.
Preferably, broken silicon material described in step (2) is broken silicon wafers, silica flour, broken primary polysilicon or broken recovery polysilicon.
The size control of described broken silicon material is that 50us～3cm is good.
Preferably, described in step (2), the thickness of thermofin is 0.2cm～3cm.
Preferably, described in step (2), the thickness of thermofin is 0.5cm～3cm.
Preferably, in step (3), utilize the temperature signal of thermocouple monitoring crucible bottom.
Preferably, in step (3), utilize temperature signal described in software collection.
Utilize signal susceptibility and the accuracy of software collection higher.
Preferably, in step (4), utilize software that a sudden change point value is set, in the time that described temperature signal exceedes the sudden change point value of described setting, utilize PLC controller that the described temperature signal of the sudden change point value that exceedes described setting is passed to warning howler, described warning howler carries out automatic alarm while receiving the described temperature signal of the sudden change point value that exceedes described setting, remind seed crystal to be melted to the height of setting.
Second aspect present invention also provides a kind of polycrystalline silicon ingot or purifying furnace, comprises heat-insulation cage, is placed in heat exchange platform in described heat-insulation cage, is placed on the crucible on described heat exchange platform, and described crucible bottom is provided with thermopair.
The present invention arranges thermopair in crucible bottom, to utilize the temperature signal of thermocouple monitoring crucible bottom.
In the present invention, the thermopair of crucible bottom is connected with PLC controller, and in PLC controller mounting software so that can gather thermocouple monitoring and transmit temperature signal; Further, PLC controller is connected with warning howler, utilize software that a sudden change point value is set, in the time that the temperature signal of thermocouple monitoring transmission exceedes the sudden change point value of this setting, utilize PLC controller that the temperature signal of the sudden change point value that exceedes this setting is passed to warning howler, this warning howler carries out automatic alarm while receiving the temperature signal of the sudden change point value that exceedes this setting, remind seed crystal to be melted to the height of setting.
Compared with prior art, the present invention has following beneficial effect:
1, method provided by the invention solved inaccurate with the existing method test such as quartz pushrod, easily there is the disconnected rod of quartz pushrod and the problem that causes seed crystal to be melted completely.
2, method provided by the invention is without carrying out continuously measured with quartz pushrod, only need to judge according to the temperature signal of crucible bottom thermopair feedback the height of seed crystal fusing, judge by rule of thumb measurement without operator, easy and simple to handle, detected result is accurate, cost is low.
3, method provided by the invention is sensitive, accurate, is convenient to the fusing to seed crystal and highly arranges, and can realize automatic production in conjunction with automation system.
Brief description of the drawings
Fig. 1 is the schematic flow sheet of exempting from the method for measuring polycrystalline silicon ingot casting seed crystal fusing height in various embodiments of the present invention;
Fig. 2 is that the temperature of the crucible bottom that gathers of the embodiment of the present invention 1 is schemed over time;
Fig. 3 is that the velocity of variation of the temperature that gathers of the embodiment of the present invention 1 is schemed over time;
Fig. 4 is that the velocity of variation of the velocity of variation of the temperature that gathers of the embodiment of the present invention 1 is schemed over time;
Fig. 5 is the vertical view of seed crystal paving mode in various embodiments of the present invention;
Fig. 6 is the sectional view of laying the crucible of seed crystal, thermofin and silicon raw material in various embodiments of the present invention;
Fig. 7 is the structural representation of the polycrystalline silicon ingot or purifying furnace that uses in various embodiments of the present invention.
Embodiment
In order to make the technical problem to be solved in the present invention, technical scheme and beneficial effect clearer, below in conjunction with accompanying drawing and preferred embodiment, the present invention is described in further detail.Should be appreciated that specific embodiment described herein, only in order to explain the present invention, is not used in restriction the present invention.
Fig. 5 is the vertical view of seed crystal paving mode in various embodiments of the present invention, and wherein 101 represent crucibles, and 201 represent seed crystals, and as shown in Figure 5, described seed crystal is smooth, be closely arranged at described crucible bottom; Fig. 6 is the sectional view of laying the crucible of seed crystal, thermofin and silicon raw material in various embodiments of the present invention, and 201 represent seed crystal, and 202 represent the thermofin being formed by broken silicon material, 203 represent silicon raw material, 101 represent crucibles, as shown in Figure 6, and crucible bottom be cascading seed crystal, thermofin and silicon raw material.Fig. 7 is the structural representation of the polycrystalline silicon ingot or purifying furnace that uses in various embodiments of the present invention, and wherein, 101 represent crucibles, and 102 represent heat exchange platforms, and 103 represent heat-insulation cages, and 104 represent thermopairs, and as shown in Figure 7, thermopair 104 is arranged on crucible bottom.
Embodiment 1:
A method of exempting to measure polycrystalline silicon ingot casting seed crystal fusing height, comprises the following steps:
(1) silicon single crystal that is 3cm in crucible bottom laying a layer thickness is as seed crystal;
(2) lay in this seed crystal face the broken silicon wafers composition thermofin that a layer thickness is 2cm;
(3) pack silicon raw material on this thermofin surface, control thermal field and technique, silicon raw material is melted from top to bottom, and use the situation of the velocity of variation of temperature, rate of temperature change and the rate of temperature change of thermocouple monitoring crucible bottom, with the numerical value of the velocity of variation of temperature, rate of temperature change and the rate of temperature change of software collection crucible bottom;
(4) there is the catastrophe point rising suddenly in the velocity of variation of temperature, rate of temperature change and the rate of temperature change of the crucible bottom arriving when software collection, represents to be melted to the height of seed crystal, controls thermal field and technique, enters the long brilliant stage.
Fig. 2 is that the temperature of the crucible bottom that gathers of the present embodiment is schemed over time, and Fig. 3 is that the velocity of variation of the temperature that gathers of the present embodiment is schemed over time, and Fig. 4 is that the velocity of variation of the velocity of variation of the temperature that gathers of the present embodiment is schemed over time; As shown in Figure 2, there is the catastrophe point rising suddenly at 288min in the temperature of crucible bottom, as shown in Figure 3, there is the catastrophe point rising suddenly at 289min in the velocity of variation of the temperature of crucible bottom, as shown in Figure 4, there is the catastrophe point rising suddenly in the velocity of variation of the rate of temperature change of crucible bottom, can accurately judge according to these three sudden change point values at 289min, be melted to the height of seed crystal in the time of the 289min～289min.
Embodiment 2:
A method of exempting to measure polycrystalline silicon ingot casting seed crystal fusing height, comprises the following steps:
(1) silicon single crystal that is 2cm in crucible bottom laying a layer thickness is as seed crystal;
(2) lay in this seed crystal face the silica flour composition thermofin that a layer thickness is 3cm;
(3) pack silicon raw material on this thermofin surface, control thermal field and technique, silicon raw material is melted from top to bottom, and use the situation of the rate of temperature change of thermocouple monitoring crucible bottom, with the numerical value of software collection rate of temperature change;
(4) there is the catastrophe point rising suddenly in the rate of temperature change arriving when software collection, represents to be melted to the height of seed crystal, controls thermal field and technique, enters the long brilliant stage.
Embodiment 3:
A method of exempting to measure polycrystalline silicon ingot casting seed crystal fusing height, comprises the following steps:
(1) the primary polysilicon that is 3cm in crucible bottom laying a layer thickness is as seed crystal;
(2) the broken primary polysilicon composition thermofin that is 2cm in this seed crystal face laying a layer thickness;
(3) pack silicon raw material on this thermofin surface, control thermal field and technique, silicon raw material is melted from top to bottom, and use the situation of the temperature of thermocouple monitoring crucible bottom, with the numerical value of software collection temperature;
(4) there is the catastrophe point rising suddenly in the temperature arriving when software collection, represents to be melted to the height of seed crystal, controls thermal field and technique, enters the long brilliant stage.
Embodiment 4:
A method of exempting to measure polycrystalline silicon ingot casting seed crystal fusing height, comprises the following steps:
(1) silica flour that is 0.5 in crucible bottom brushing a layer thickness is as seed crystal;
(2) lay in this seed crystal face the broken silicon wafers composition thermofin that a layer thickness is 3cm;
(3) pack silicon raw material on this thermofin surface, control thermal field and technique, silicon raw material is melted from top to bottom, and use the situation of the velocity of variation of the rate of temperature change of thermocouple monitoring crucible bottom, use the numerical value of the velocity of variation of software collection rate of temperature change;
(4) there is the catastrophe point rising suddenly in the velocity of variation of the rate of temperature change arriving when software collection, represents to be melted to the height of seed crystal, controls thermal field and technique, enters the long brilliant stage.
Embodiment 5
A method of exempting to measure polycrystalline silicon ingot casting seed crystal fusing height, comprises the following steps:
(1) silicon carbide that is 0.1cm in crucible bottom brushing a layer thickness is as seed crystal;
(2) lay in this seed crystal face the silica flour composition thermofin that a layer thickness is 0.5cm;
(3) pack silicon raw material on this thermofin surface, control thermal field and technique, silicon raw material is melted from top to bottom, and use the situation of the rate of temperature change of thermocouple monitoring crucible bottom, with the numerical value of software collection rate of temperature change;
(4) there is the catastrophe point rising suddenly in the rate of temperature change arriving when software collection, represents to be melted to the height of seed crystal, controls thermal field and technique, enters the long brilliant stage.
Embodiment 6
A method of exempting to measure polycrystalline silicon ingot casting seed crystal fusing height, comprises the following steps:
(1) quartz sand that is 0.5cm in crucible bottom brushing a layer thickness is as seed crystal;
(2) the broken recovery polysilicon composition thermofin that is 0.2cm in this seed crystal face laying a layer thickness;
(3) pack silicon raw material on this thermofin surface, control thermal field and technique, silicon raw material is melted from top to bottom, and use the situation of the rate of temperature change of thermocouple monitoring crucible bottom, with the numerical value of software collection rate of temperature change;
(4) there is the catastrophe point rising suddenly in the rate of temperature change arriving when software collection, represents to be melted to the height of seed crystal, controls thermal field and technique, enters the long brilliant stage.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments of doing within the spirit and principles in the present invention, be equal to and replace and improvement etc., within all should being included in protection scope of the present invention.
Claims (10)
1. a method of exempting to measure polycrystalline silicon ingot casting seed crystal fusing height, is characterized in that, comprises the following steps:
(1) in crucible bottom, one deck seed crystal is set;
(2) lay the broken silicon material of one deck in described seed crystal face and form thermofin, the thermal conductivity of described thermofin is lower than the thermal conductivity of described seed crystal;
(3) pack silicon raw material on described thermofin surface, control thermal field and technique, described silicon raw material is melted from top to bottom, and monitor the temperature signal of described crucible bottom; Described temperature signal is described crucible bottom temperature, described crucible bottom rate of temperature change, or the velocity of variation of described crucible bottom rate of temperature change;
(4), according to the described temperature signal getting, can judge the height of described seed crystal fusing; In the time there is the catastrophe point of rising suddenly in described temperature signal, represent to be melted to the height of described seed crystal, now control thermal field and technique, enter the long brilliant stage.
2. the method for exempting to measure polycrystalline silicon ingot casting seed crystal fusing height according to claim 1, is characterized in that, seed crystal described in step (1) is silicon single crystal, silica flour, silicon carbide, quartz sand or primary polysilicon.
3. the method for exempting to measure polycrystalline silicon ingot casting seed crystal fusing height according to claim 1, is characterized in that, the silicon single crystal that is 0.5cm～3cm in crucible bottom laying a layer thickness in step (1) or primary polysilicon are as seed crystal.
4. the method for exempting to measure polycrystalline silicon ingot casting seed crystal fusing height according to claim 1, is characterized in that, the silica flour, silicon carbide or the quartz sand that in step (1), are 0.1cm～0.5cm in crucible bottom brushing a layer thickness are as seed crystal.
5. the method for exempting to measure polycrystalline silicon ingot casting seed crystal fusing height according to claim 1, is characterized in that, broken silicon material described in step (2) is broken silicon wafers, silica flour, broken primary polysilicon or broken recovery polysilicon.
6. the method for exempting to measure polycrystalline silicon ingot casting seed crystal fusing height according to claim 1, is characterized in that, described in step (2), the thickness of thermofin is 0.2cm～3cm.
7. the method for exempting to measure polycrystalline silicon ingot casting seed crystal fusing height according to claim 1, is characterized in that, utilizes the temperature signal of thermocouple monitoring crucible bottom in step (3).
8. the method for measuring polycrystalline silicon ingot casting seed crystal fusing height according to exempting from described in claim 1 to 7 any one, is characterized in that, utilizes temperature signal described in software collection in step (3).
9. the method for exempting to measure polycrystalline silicon ingot casting seed crystal fusing height according to claim 8, it is characterized in that, in step (4), utilize software that a sudden change point value is set, in the time that described temperature signal exceedes the sudden change point value of described setting, utilize PLC controller that the described temperature signal of the sudden change point value that exceedes described setting is passed to warning howler, described warning howler carries out automatic alarm while receiving the described temperature signal of the sudden change point value that exceedes described setting, remind seed crystal to be melted to the height of setting.
10. a polycrystalline silicon ingot or purifying furnace, comprises heat-insulation cage, is placed in heat exchange platform in described heat-insulation cage, is placed on the crucible on described heat exchange platform, it is characterized in that, described crucible bottom is provided with thermopair.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106400103A (en) * | 2016-12-07 | 2017-02-15 | 晶科能源有限公司 | Manufacturing method for doped monocrystal silicon ingot for solar cell |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2397581A1 (en) * | 2010-06-15 | 2011-12-21 | Sino-American Silicon Products Inc | Method for manufacturing a crystalline silicon ingot |
| CN102392301A (en) * | 2011-11-16 | 2012-03-28 | 浙江碧晶科技有限公司 | Method for judging seed crystal melting state in directional solidification method and crystal pulling control system |
| CN202247005U (en) * | 2011-09-07 | 2012-05-30 | 浙江精功新能源有限公司 | Temperature measuring device for polysilicon ingot casting furnace |
| CN102758242A (en) * | 2011-04-25 | 2012-10-31 | 江西赛维Ldk太阳能高科技有限公司 | Charging method in monocrystalline silicon ingot casting, and monocrystalline silicon ingot casting method |
| CN103361721A (en) * | 2013-07-15 | 2013-10-23 | 江苏协鑫硅材料科技发展有限公司 | Melting height control method of ingot casting crystal seed and polycrystalline silicon ingot casting furnace |
-
2014
- 2014-08-06 CN CN201410384074.XA patent/CN104152993A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2397581A1 (en) * | 2010-06-15 | 2011-12-21 | Sino-American Silicon Products Inc | Method for manufacturing a crystalline silicon ingot |
| CN102758242A (en) * | 2011-04-25 | 2012-10-31 | 江西赛维Ldk太阳能高科技有限公司 | Charging method in monocrystalline silicon ingot casting, and monocrystalline silicon ingot casting method |
| CN202247005U (en) * | 2011-09-07 | 2012-05-30 | 浙江精功新能源有限公司 | Temperature measuring device for polysilicon ingot casting furnace |
| CN102392301A (en) * | 2011-11-16 | 2012-03-28 | 浙江碧晶科技有限公司 | Method for judging seed crystal melting state in directional solidification method and crystal pulling control system |
| CN103361721A (en) * | 2013-07-15 | 2013-10-23 | 江苏协鑫硅材料科技发展有限公司 | Melting height control method of ingot casting crystal seed and polycrystalline silicon ingot casting furnace |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106400103A (en) * | 2016-12-07 | 2017-02-15 | 晶科能源有限公司 | Manufacturing method for doped monocrystal silicon ingot for solar cell |
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Application publication date: 20141119 |