CN104010448A - Method for manufacturing component-embedded wiring board and semiconductor device - Google Patents
Method for manufacturing component-embedded wiring board and semiconductor device Download PDFInfo
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- CN104010448A CN104010448A CN201410057350.1A CN201410057350A CN104010448A CN 104010448 A CN104010448 A CN 104010448A CN 201410057350 A CN201410057350 A CN 201410057350A CN 104010448 A CN104010448 A CN 104010448A
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- 238000009835 boiling Methods 0.000 description 1
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- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
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- WCZVZNOTHYJIEI-UHFFFAOYSA-N cinnoline Chemical compound N1=NC=CC2=CC=CC=C21 WCZVZNOTHYJIEI-UHFFFAOYSA-N 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
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- JYDYWDJQFNNNCK-UHFFFAOYSA-N cyanic acid;phenol Chemical compound OC#N.OC1=CC=CC=C1 JYDYWDJQFNNNCK-UHFFFAOYSA-N 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
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- 238000007772 electroless plating Methods 0.000 description 1
- 125000000219 ethylidene group Chemical group [H]C(=[*])C([H])([H])[H] 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- BMXFPSYOCKSSBE-UHFFFAOYSA-N guanidine Chemical compound NC(N)=N.NC(N)=N BMXFPSYOCKSSBE-UHFFFAOYSA-N 0.000 description 1
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- MTNDZQHUAFNZQY-UHFFFAOYSA-N imidazoline Chemical compound C1CN=CN1 MTNDZQHUAFNZQY-UHFFFAOYSA-N 0.000 description 1
- 150000004693 imidazolium salts Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- WFKAJVHLWXSISD-UHFFFAOYSA-N isobutyramide Chemical compound CC(C)C(N)=O WFKAJVHLWXSISD-UHFFFAOYSA-N 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 238000007561 laser diffraction method Methods 0.000 description 1
- 150000002672 m-cresols Chemical class 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 1
- 239000001095 magnesium carbonate Substances 0.000 description 1
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 239000000347 magnesium hydroxide Substances 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 229910000000 metal hydroxide Inorganic materials 0.000 description 1
- 150000004692 metal hydroxides Chemical class 0.000 description 1
- IHHCJKNEVHNNMW-UHFFFAOYSA-N methane;phenol Chemical compound C.OC1=CC=CC=C1 IHHCJKNEVHNNMW-UHFFFAOYSA-N 0.000 description 1
- XLSZMDLNRCVEIJ-UHFFFAOYSA-N methylimidazole Natural products CC1=CNC=N1 XLSZMDLNRCVEIJ-UHFFFAOYSA-N 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- BWSNYLWZGNCWIH-UHFFFAOYSA-N naphthalene Chemical compound C1=CC=CC2=CC=CC=C21.C1=CC=CC2=CC=CC=C21 BWSNYLWZGNCWIH-UHFFFAOYSA-N 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910017464 nitrogen compound Inorganic materials 0.000 description 1
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- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 125000003518 norbornenyl group Chemical group C12(C=CC(CC1)C2)* 0.000 description 1
- 239000004843 novolac epoxy resin Substances 0.000 description 1
- 150000002883 o-cresols Chemical class 0.000 description 1
- 239000012766 organic filler Substances 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 150000002931 p-cresols Chemical class 0.000 description 1
- NXSDRAMLICHCOK-UHFFFAOYSA-N phenol Chemical compound OC1=CC=CC=C1.OC1=CC=CC=C1.OC1=CC=CC=C1.OC1=CC=CC=C1 NXSDRAMLICHCOK-UHFFFAOYSA-N 0.000 description 1
- ZYEQKXIEBXGMLG-UHFFFAOYSA-N phenol propane Chemical compound CCC.Oc1ccccc1.Oc1ccccc1.Oc1ccccc1 ZYEQKXIEBXGMLG-UHFFFAOYSA-N 0.000 description 1
- 229960005382 phenolphthalein Drugs 0.000 description 1
- LGRFSURHDFAFJT-UHFFFAOYSA-N phthalic anhydride Chemical compound C1=CC=C2C(=O)OC(=O)C2=C1 LGRFSURHDFAFJT-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920006389 polyphenyl polymer Polymers 0.000 description 1
- 229920001955 polyphenylene ether Polymers 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000000790 scattering method Methods 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 239000011115 styrene butadiene Substances 0.000 description 1
- 229920003048 styrene butadiene rubber Polymers 0.000 description 1
- 229960005137 succinic acid Drugs 0.000 description 1
- 150000004763 sulfides Chemical class 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 235000012222 talc Nutrition 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 235000007586 terpenes Nutrition 0.000 description 1
- VERMEZLHWFHDLK-UHFFFAOYSA-N tetrahydroxybenzene Natural products OC1=CC=C(O)C(O)=C1O VERMEZLHWFHDLK-UHFFFAOYSA-N 0.000 description 1
- GHPYAGKTTCKKDF-UHFFFAOYSA-M tetraphenylphosphanium;thiocyanate Chemical class [S-]C#N.C1=CC=CC=C1[P+](C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 GHPYAGKTTCKKDF-UHFFFAOYSA-M 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 150000003573 thiols Chemical class 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- BAZVSMNPJJMILC-UHFFFAOYSA-N triadimenol Chemical compound C1=NC=NN1C(C(O)C(C)(C)C)OC1=CC=C(Cl)C=C1 BAZVSMNPJJMILC-UHFFFAOYSA-N 0.000 description 1
- 125000005270 trialkylamine group Chemical group 0.000 description 1
- BSUNTQCMCCQSQH-UHFFFAOYSA-N triazine Chemical group C1=CN=NN=C1.C1=CN=NN=C1 BSUNTQCMCCQSQH-UHFFFAOYSA-N 0.000 description 1
- IMFACGCPASFAPR-UHFFFAOYSA-N tributylamine Chemical compound CCCCN(CCCC)CCCC IMFACGCPASFAPR-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- UJGFGHBOZLCAQI-UHFFFAOYSA-N tris(phosphanyl) borate Chemical compound POB(OP)OP UJGFGHBOZLCAQI-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000009941 weaving Methods 0.000 description 1
- 150000003752 zinc compounds Chemical class 0.000 description 1
- 229910000166 zirconium phosphate Inorganic materials 0.000 description 1
- LEHFSLREWWMLPU-UHFFFAOYSA-B zirconium(4+);tetraphosphate Chemical compound [Zr+4].[Zr+4].[Zr+4].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O LEHFSLREWWMLPU-UHFFFAOYSA-B 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
The present invention relates to a method for manufacturing a wiring board with a built-in component. The method for manufacturing a component-embedded wiring substrate includes the following steps , (B), (C), and (D) in this order: a step of vacuum laminating the first adhesive film on the inner layer substrate on which the component is temporarily mounted, so that the first thermosetting resin composition layer is bonded to the first main surface of the inner layer substrate; (B) a step (C) of performing a heat treatment on the first thermosetting resin composition layer in order to suppress positional displacement of the component, and performing the heat treatment within a range in which occurrence of warpage of the substrate is suppressed; (C) a step of vacuum laminating the second adhesive film so that the second thermosetting resin composition layer is bonded to the second main surface of the inner layer substrate after the temporary mounting material is peeled from the second main surface of the inner layer substrate; (D) and forming an insulating layer by thermally curing the first and second thermosetting resin composition layers.
Description
Technical field
The present invention relates to manufacture method and the semiconductor device of parts internally-arranged type circuit board.
Background technology
In recent years, the demand of the so small-sized high function electronic equipment of smart phone, flat board (tablet) PC is being increased.Accompany therewith, further multifunction, the miniaturization of the printed wiring board that requirement is used in so small-sized high function electronic equipment.
The parts such as bare chip (bare chip), shaped like chips capacitor, shaped like chips inductor are installed at printed wiring board.In the past, such parts were only arranged on the surface circuit of printed wiring board, and still, its installation is limited, and the reply further multifunction of printed wiring board is in recent years, the requirement of miniaturization is difficult.
In order to deal with such problem, while the printed wiring board of seeking miniaturization as the lift-launch amount that can increase parts has proposed parts internally-arranged type circuit board (patent documentation 1).
Prior art document
Patent documentation
Patent documentation 1: JP 2011-216636 communique.
Summary of the invention
The problem that invention will solve
The internal substrate that parts internally-arranged type circuit board for example can be used the chamber (cavity) being formed with for accommodating parts is (i) manufactured to order (v) according to following.In addition, when manufacture component internally-arranged type circuit board, generally use circuit substrate as internal substrate.(i) at the interarea of folk prescription that is formed with the internal substrate in chamber, the stacked interim fabricated material for interim build-up member.(ii) parts are assemblied in temporarily to the adhesive surface of the interim fabricated material exposing via chamber.(iii) the opposing party's the interarea that is temporarily equipped with the internal substrate of parts in chamber, arranges heat-curing resin synthetic layer, makes its hot curing and forms insulating barrier.(iv) after peeling off interim fabricated material, at the interarea of the folk prescription of the internal substrate exposing, heat-curing resin synthetic layer is set, make its hot curing and form insulating barrier.After this, conductor layer (wiring) is (v) set.
Realize further miniaturization, the lightweight of electronic equipment, require miniaturization, the slimming of parts internally-arranged type circuit board self.Yet, the present inventor finds, in order to reach the miniaturization, slimming of parts internally-arranged type circuit board self and use in the situations such as internal substrate of internal substrate that chamber density is high or thin thickness, at the interarea of the folk prescription of internal substrate, form stage (above-mentioned (iii) after) of insulating barrier, the face that is provided with insulating barrier of take sometimes as inner circumferential side, produce the phenomenon that internal substrate is curling (following, also referred to as " substrate warp ".)。When producing substrate warp, can transmit and bring obstacle to substrate, cause manufacturing the reduction of efficiency (rate of finished products).
In addition, the small cloth linearize of the miniaturization of built-in parts, circuit also, in development, also becomes more and more higher to the requirement of the configuration precision of the parts in the chamber of internal substrate.
Problem of the present invention is, provides a kind of and can suppress substrate warp and can suppress the change in location (departing from) of the parts in chamber and realize the manufacture method of parts internally-arranged type circuit board of the configuration precision of parts.
For solving the scheme of problem
The present inventor studies intensively above-mentioned problem, found that, after the stacked heat-curing resin synthetic of the interarea layer of energy by the folk prescription at internal substrate, under given conditions this heat-curing resin synthetic layer is carried out to heat treated, thereby solve above-mentioned problem, finally completed the present invention.
That is, the present invention includes following content.
[1] manufacture method for parts internally-arranged type circuit board, comprises following operation (A), (B), (C) and (D) in order:
(A) be equipped with on the internal substrate of parts temporarily, to the first adhesive film of the first heat-curing resin synthetic layer that comprises the first supporting mass and engage with this first supporting mass so that this first heat-curing resin synthetic layer carries out vacuum laminated operation with the mode that the first interarea of internal substrate engages, wherein, the described internal substrate that is temporarily equipped with parts comprises: have the first and second interareas, be formed with the internal substrate that connects the chamber between this first and second interarea; The interim fabricated material engaging with the second interarea of this internal substrate; And the parts of inside that are temporarily assemblied in the chamber of described internal substrate by described interim fabricated material;
(B) in order to suppress the position deviation of described parts in following operation (C), the first heat-curing resin synthetic layer is carried out to heat treated, and, the operation that this heat treated is carried out in the scope that suppresses the generation of substrate warp;
(C) after the second interarea of internal substrate is peeled off interim fabricated material, to the second adhesive film of the second heat-curing resin synthetic layer that comprises the second supporting mass and engage with this second supporting mass so that this second heat-curing resin synthetic layer carries out vacuum laminated operation with the mode that the second interarea of internal substrate engages; And
(D) the first and second heat-curing resin synthetic layers carried out to hot curing and form the operation of insulating barrier.
[2], according to the method [1] described, wherein, internal substrate is that circuit substrate is (below, also referred to as " method of the first execution mode ".)。
[3], according to the method [1] described, wherein, internal substrate is that insulated substrate is (below, also referred to as " method of the second execution mode ".)。
[4], according to the method [3] described, wherein, insulated substrate is to solidify prepreg (prepreg), glass substrate or ceramic substrate.
[5], according to the method described in any of [1]~[4], wherein, the minimum melting viscosity of the first heat-curing resin synthetic layer in the first adhesive film is 100~10000 pools (poise).
[6], according to the method described in any of [1]~[5], wherein, in operation (B), the first heat-curing resin synthetic layer so that becoming the modes of 15000~200000 pools, its minimum melting viscosity is carried out to heat treated.
[7] according to the method described in any of [1]~[6], wherein, in operation (B), under the state that is provided with the first supporting mass, carry out heat treated.
[8] according to the method described in any of [1]~[7], wherein, the spacing between chamber is 1~10mm.
[9] according to the method described in any of [1]~[8], wherein, the second heat-curing resin synthetic layer is thinner than the first heat-curing resin synthetic layer.
[10] according to the method described in any of [2], [4]~[9], wherein, the thickness of circuit substrate is 50~350 μ m.
[11] according to the method described in any of [3]~[9], wherein, the thickness of insulated substrate is 30~350 μ m.
[12] according to the method described in any of [1]~[11], wherein, from the substrate obtaining in operation (B), obtaining planar dimension is L(mm) * W(mm) (at this, L >=W, L is below 550mm.) test film time, the warpage of this test film is 0.1L(mm) below.
[13] according to the method described in any of [1]~[12], wherein, the warpage of the substrate obtaining in operation (B) is below 25mm.
[14], according to the method described in any of [1]~[13], wherein, also comprise the operation of (E) perforate.
[15] according to the method described in any of [1]~[14], wherein, also comprise that (F) forms the operation of conductor layer on insulating barrier.
[16] according to the method [15] described, wherein, operation (F) comprising: insulating barrier is carried out to roughening treatment; And by plating, form conductor layer on the insulating barrier after alligatoring.
[17] semiconductor device, comprises the parts internally-arranged type circuit board that the method described in any of use [1]~[16] is manufactured.
Invention effect
According to the present invention, can provide a kind of and suppress substrate warp and can suppress the change in location (departing from) of the parts in chamber and realize the manufacture method of parts internally-arranged type circuit board of the configuration precision of outstanding parts.
Accompanying drawing explanation
Figure 1A is the schematic diagram (1) that an order preparing the circuit substrate that is temporarily equipped with parts use in the method for the first execution mode of the present invention is shown.
Figure 1B is the schematic diagram (2) that an order preparing the circuit substrate that is temporarily equipped with parts use in the method for the first execution mode of the present invention is shown.
Fig. 1 C is the schematic diagram (3) that an order preparing the circuit substrate that is temporarily equipped with parts use in the method for the first execution mode of the present invention is shown.
Fig. 1 D is the schematic diagram (4) that an order preparing the circuit substrate that is temporarily equipped with parts use in the method for the first execution mode of the present invention is shown.
Fig. 2 A is the schematic diagram (1) that an order preparing the insulated substrate that is temporarily equipped with parts use in the method for the second execution mode of the present invention is shown.
Fig. 2 B is the schematic diagram (2) that an order preparing the insulated substrate that is temporarily equipped with parts use in the method for the second execution mode of the present invention is shown.
Fig. 2 C is the schematic diagram (3) that an order preparing the insulated substrate that is temporarily equipped with parts use in the method for the second execution mode of the present invention is shown.
Fig. 2 D is the schematic diagram (4) that an order preparing the insulated substrate that is temporarily equipped with parts use in the method for the second execution mode of the present invention is shown.
Fig. 3 is the schematic diagram that is illustrated in a scheme of the first adhesive film using in the manufacture method of parts internally-arranged type circuit board of the present invention.
Fig. 4 A is the schematic diagram (1) for the method for the first execution mode of the present invention is described.
Fig. 4 B is the schematic diagram (2) for the method for the first execution mode of the present invention is described.
Fig. 4 C is the schematic diagram (3) for the method for the first execution mode of the present invention is described.
Fig. 4 D is the schematic diagram (4) for the method for the first execution mode of the present invention is described.
Fig. 4 E is the schematic diagram (5) for the method for the first execution mode of the present invention is described.
Fig. 4 F is the schematic diagram (6) for the method for the first execution mode of the present invention is described.
Fig. 4 G is the schematic diagram (7) for the method for the first execution mode of the present invention is described.
Fig. 5 A is the schematic diagram (1) for the method for the second execution mode of the present invention is described.
Fig. 5 B is the schematic diagram (2) for the method for the second execution mode of the present invention is described.
Fig. 5 C is the schematic diagram (3) for the method for the second execution mode of the present invention is described.
Fig. 5 D is the schematic diagram (4) for the method for the second execution mode of the present invention is described.
Fig. 5 E is the schematic diagram (5) for the method for the second execution mode of the present invention is described.
Fig. 5 F is the schematic diagram (6) for the method for the second execution mode of the present invention is described.
Fig. 5 G is the schematic diagram (7) for the method for the second execution mode of the present invention is described.
Fig. 6 is for the schematic diagram of the evaluation method 1 of substrate warp is described.
Fig. 7 is for the schematic diagram of the evaluation method 2 of substrate warp is described.
Embodiment
[manufacture method of parts internally-arranged type circuit board]
The manufacture method of parts internally-arranged type circuit board of the present invention comprises following operation (A), (B), (C) and (D) in order.
(A) be equipped with on the internal substrate of parts temporarily, to the first adhesive film of the first heat-curing resin synthetic layer that comprises the first supporting mass and engage with this first supporting mass so that this first heat-curing resin synthetic layer carries out vacuum laminated operation with the mode that the first interarea of internal substrate engages, wherein, the described internal substrate that is temporarily equipped with parts comprises: have the first and second interareas, be formed with the internal substrate that connects the chamber between this first and second interarea; The interim fabricated material engaging with the second interarea of this internal substrate; And the parts of inside that are temporarily assemblied in the chamber of described internal substrate by described interim fabricated material;
(B) in order to suppress the position deviation of described parts in following operation (C), the first heat-curing resin synthetic layer is carried out to heat treated, and, the operation that this heat treated is carried out in the scope that suppresses the generation of substrate warp;
(C) after the second interarea of internal substrate is peeled off interim fabricated material, to the second adhesive film of the second heat-curing resin synthetic layer that comprises the second supporting mass and engage with this second supporting mass so that this second heat-curing resin synthetic layer carries out vacuum laminated operation with the mode that the second interarea of internal substrate engages; And
(D) the first and second heat-curing resin synthetic layers carried out to hot curing and form the operation of insulating barrier.
In addition, in the present invention, about to operation (A) to (D) said " comprising in order ", as long as comprise that each operation of operation (A) to (D) and each operation of operation (A) to (D) implement in this order, just do not hinder and do not comprise other operation.
Below, about to operation or process said " comprising in order ", be also same.
When manufacture component internally-arranged type circuit board, as internal substrate, in general use circuit substrate.Therefore,, in the method for the first execution mode of the present invention, internal substrate is that circuit substrate is (for " circuit substrate " by aftermentioned.)。Below, the parts internally-arranged type the circuit board also method with the first execution mode being obtained is called " parts internally-arranged type circuit board ".
In addition, the present invention also can be applied to use insulated substrate as the execution mode of internal substrate.Therefore,, in the method for the second execution mode of the present invention, internal substrate is that insulated substrate is (for " insulated substrate " by aftermentioned.)。Below, the parts internally-arranged type the circuit board also method with the second execution mode being obtained is called " parts internally-arranged type substrate ".
Before the method for the first execution mode of the present invention and the second execution mode is at length described, " being equipped with the circuit substrate of parts ", " being equipped with the insulated substrate of parts " and " adhesive film " of using are in the method for the invention described temporarily temporarily.
< is equipped with the circuit substrate > of parts temporarily
The circuit substrate that is temporarily equipped with parts using in the method for the first execution mode of the present invention (following, also referred to as " the interim assembly type circuit substrate of parts ".) comprising: there are the first and second interareas, be formed with the circuit substrate that connects the chamber between this first and second interarea; The interim fabricated material engaging with the second interarea of this circuit substrate; And the parts of inside that are temporarily assemblied in the chamber of described circuit substrate by described interim fabricated material.
The interim assembly type circuit substrate of such parts can be when manufacture component internally-arranged type circuit board according to before well-known order arbitrarily prepare.Below, with reference to Figure 1A to Fig. 1 D, an example of the order of preparing the interim assembly type circuit substrate of parts is described.
The first, prepare circuit substrate (Figure 1A).In the present invention, so-called " circuit substrate ", what say is the first and second interareas that have in opposite directions, the tabular substrate that has the wiring that carries out pattern processing folk prescription or the both sides of this first and second interarea.When manufacturing printed wiring board, the middle internal layer circuit substrate of manufacturing thing that also should be formed with insulating barrier and/or conductor layer is also contained in said " circuit substrate " in the present invention.At the end face of the schematically illustrated circuit substrate 11 of Figure 1A, circuit substrate 11 comprises the wirings 13 such as substrate 12, interlayer wiring (for example, guide hole (via) wiring, through hole (through hole) wiring) and surface wiring.In the following description, for convenient, the first interarea of so-called circuit substrate, represents the upside interarea of illustrated circuit substrate, and the second interarea of so-called circuit substrate represents the downside interarea of illustrated circuit substrate.
As the substrate 12 using in circuit substrate 11, for example, can enumerate glass epoxy substrate, metal substrate, polyester (polyester) substrate, polyimides (polyimide) substrate, BT resin (resin) substrate, thermohardening type polyphenylene oxide (Polyphenyleneether) substrate etc., preferably glass epoxy substrate.
Thickness about the substrate 12 of circuit substrate 11, from the viewpoint of the slimming of parts internally-arranged type circuit board, consider, thin is more suitable, less than 400 μ m preferably, be more preferably below 350 μ m, being more preferably below 300 μ m, being more preferably below 250 μ m, is particularly preferably below 200 μ m, below 180 μ m, below 170 μ m, below 160 μ m or below 150 μ m.The method according to this invention, even in the situation that use possesses the circuit substrate of so thin substrate, also can suppress the generation of substrate warp.Although the lower limit of the thickness of substrate 2 is not particularly limited,, the viewpoint of the disposal while transmitting from improving is considered, preferably more than 50 μ m, more than being more preferably 80 μ m.
About the thermal coefficient of expansion of the substrate 12 of circuit substrate 11, from suppressing circuit distortion, the viewpoint that produces crack (crack) considers, preferably, below 15ppm, is more preferably below 13ppm, be more preferably below 11ppm.Although the lower limit of the thermal coefficient of expansion of substrate 12 depends on the composition of the resin composition using in the formation of insulating barrier,, preferably-more than 2ppm, more than being more preferably 0ppm, more than being more preferably 4ppm.In the present invention, by carrying out with stretching weighting procedure, thermo-mechanical analysis (TMA) obtains the thermal coefficient of expansion of substrate, the coefficient of linear thermal expansion at 25~150 ℃ of in-plane.As the thermo-mechanical analysis device that can use, for example, can enumerate (strain) Rigaku system " Thermo Plus TMA8310 ", Seiko Instruments(strain in the measurement of the coefficient of linear thermal expansion of substrate) system " TMA-SS6100 ".
About the glass transition temperature Tg of the substrate 12 of circuit substrate 11, from the viewpoint of the mechanical strength of parts internally-arranged type circuit board, consider, preferably more than 170 ℃, be more preferably more than 180 ℃.Although the upper limit of the Tg of substrate 12 is not particularly limited,, be generally below 300 ℃.The Tg of substrate can measure by carrying out thermo-mechanical analysis with stretching weighting procedure.As thermo-mechanical analysis device, can use thermo-mechanical analysis device same as described above.
The size of the wiring 13 that circuit substrate 11 possesses can decide according to required characteristic.For example, about the thickness of surface wiring, from the viewpoint of the slimming of parts internally-arranged type circuit board, consider, preferably, below 40 μ m, be more preferably below 35 μ m, be more preferably below 30 μ m, being more preferably below 25 μ m, is particularly preferably below 20 μ m, below 19 μ m or below 18 μ m.Although the lower limit of the thickness of surface wiring is not particularly limited,, normally 1 μ m is above, 3 μ m above, 5 μ m are with first-class.
The second, on circuit substrate, be provided for accommodating the chamber (Figure 1B) of parts.As schematically illustrated at Figure 1B, can the chamber 12a between the first and second interareas that connect circuit substrate be set in the position of the regulation of substrate 12.Consider the characteristic of substrate 12, chamber 12a is such as forming by the well-known method of use drill bit (drill), laser, plasma, etching media etc.
Although at Figure 1B, only show 1 chamber 12a,, also sky is opened the interval of regulation and is provided with a plurality of chamber 12a mutually.About the spacing between the 12a of chamber, from the viewpoint of the miniaturization of parts internally-arranged type circuit board, consider, short is suitable.Although the spacing between the 12a of chamber depends on the opening size of chamber 12a self,, preferably, below 10mm, be more preferably below 9mm, be more preferably below 8mm, be more preferably below 7mm, be particularly preferably below 6mm.The method according to this invention, even in the situation that chamber is set with so short spacing, also can suppress the generation of substrate warp.Although the lower limit of the spacing between the 12a of chamber depends on the opening size of chamber 12a self,, normally above, the 2mm of 1mm is with first-class.It is identical that each spacing between the 12a of chamber need not spread all over circuit substrate, also can be different.
The opening shape of chamber 12a is not particularly limited, and can do the shape arbitrarily such as orthogonal, circular, essentially rectangular, circular.In addition, although the opening size of chamber 12a depends on the design of wiring,, for example, in the situation that the opening shape of chamber 12a is rectangle, preferably, below 5mm * 5mm, be more preferably below 3mm * 3mm.Although the lower limit of this opening size depends on the size of accommodated parts,, normally more than 0.5mm * 0.5mm.It is identical that the opening shape of chamber 12a and opening size need not spread all over circuit substrate, also can be different.
The 3rd, at the stacked interim fabricated material of the second interarea (Fig. 1 C) of circuit substrate.As interim fabricated material, as long as have when parts are assembled temporarily, sufficient fusible adhesive surface is shown, be just not particularly limited, when manufacture component internally-arranged type circuit board, can use well-known interim fabricated material arbitrarily in the past.In the schematically illustrated scheme of Fig. 1 C, the mode that membranaceous interim fabricated material 14 is engaged with the adhesive surface of this interim fabricated material 14 and the second interarea of circuit substrate is carried out stacked.Thus, the adhesive surface of interim fabricated material 14 is exposed via chamber 12a.
As membranaceous interim fabricated material, for example, can enumerate the UC series (wafer cutting (wafer dicing) is with UV) of Furukawa electrical industry (strain) system.
The 4th, parts are assemblied in temporarily to the adhesive surface (Fig. 1 D) of the interim fabricated material exposing via chamber.In the schematically illustrated scheme of Fig. 1 D, parts 15 are assemblied in temporarily to the adhesive surface of the interim fabricated material 14 exposing via chamber 12a.
As parts 15, can select suitable electric component according to required characteristic, for example, can enumerate the active parts such as the passive components such as capacitor, inductor, resistance, semiconductor bare chip.Can in all chambeies, use identical parts 15, also can use different parts 15 by each chamber.
Above, although with reference to Figure 1A to Fig. 1 D, to preparing an example of the order of the interim assembly type circuit substrate of parts, be illustrated,, as long as can obtain the interim assembly type circuit substrate of parts, be not limited to above-mentioned order.For example, wiring 13 is set after also chamber 12a can being formed on substrate 12.In addition, also can after the second interarea that interim fabricated material 14 is layered in to circuit substrate, form chamber 12a.About preparing the order of the interim assembly type circuit substrate of parts, can consider many variation.Use the scheme of the interim assembly type circuit substrate of the parts manufacture component internally-arranged type circuit board of preparing by such variation also within the scope of the invention.
< is equipped with the insulated substrate > of parts temporarily
The insulated substrate that is temporarily equipped with parts using in the method for the second execution mode of the present invention (following, also referred to as " the interim assembly type insulated substrate of parts ".) comprising: there are the first and second interareas, be formed with the insulated substrate that connects the chamber between this first and second interarea; The interim fabricated material engaging with the second interarea of this insulated substrate; And the parts of inside that are temporarily assemblied in the chamber of described insulated substrate by described interim fabricated material.
Below, with reference to Fig. 2 A to Fig. 2 D, to preparing an example of the order of the interim assembly type insulated substrate of parts, describe.
The first, prepare insulated substrate (Fig. 2 A).In the present invention, so-called " insulated substrate ", what say is the first and second interareas that have in opposite directions, and the tabular substrate of electrical insulating property is shown.In the following description, for convenient, the first interarea of so-called insulated substrate, represents the upside interarea of illustrated insulated substrate, and the second interarea of so-called insulated substrate represents the downside interarea of illustrated insulated substrate.
Although insulated substrate 21 is not particularly limited, can be with insulating material, the conductive board as metal substrate applied and give the substrate of insulating properties, but, from suppressing the viewpoint of substrate warp, the viewpoint of the insulating reliability of parts internally-arranged type substrate consider, preferably solidify prepreg, glass substrate or ceramic substrate, be more preferably curing prepreg.
The so-called prepreg of solidifying, what say is the solidfied material of prepreg.Prepreg is the flaky material that comprises heat-curing resin synthetic and sheet-like fiber base material, for example, can make heat-curing resin synthetic be immersed in sheet-like fiber base material and form.About the heat-curing resin synthetic using in prepreg, as long as this solidfied material has sufficient hardness and insulating properties is just not particularly limited, can use the well-known heat-curing resin synthetic of the past using in the formation of the insulating barrier of printed wiring board.Or the heat-curing resin synthetic using in prepreg can be also the synthetic identical with the heat-curing resin synthetic using in adhesive film described later.The sheet-like fiber base material using in prepreg is not particularly limited, and can be used as the conventional base material of base material for prepreg.From the viewpoint that can make the thermal coefficient of expansion of curing prepreg reduce, consider, as sheet-like fiber base material, preferred glass fibers base material, organic fiber base material are (for example, aromatic polyamide (aramid) fiber base material), more preferably fiberglass substrate, more preferably glass fabric (glass cloth).As the glass fibre using in fiberglass substrate, from making the viewpoint that thermal coefficient of expansion reduces, consider, preferably from the more than a kind glass fibre of the group selection that formed by E glass fibre, S glass fibre, T glass fibre and Q glass fibre, more preferably S glass fibre, Q glass fibre, more preferably Q glass fibre.So-called Q glass fibre, what say is that the containing ratio of silicon dioxide accounts for glass fibres more than 90 quality %.About the thickness of sheet-like fiber base material, from solidifying the viewpoint of the slimming of prepreg, consider, preferably, below 200 μ m, be more preferably below 100 μ m, be more preferably below 80 μ m, be more preferably below 50 μ m, be particularly preferably below 40 μ m.About the lower limit of the thickness of sheet-like fiber base material, from obtaining having the viewpoint of the curing prepreg of sufficient rigidity, consider, preferably more than 1 μ m, more than being more preferably 10 μ m, more than being more preferably 15 μ m.
Thickness about insulated substrate 21, from the viewpoint of the slimming of parts internally-arranged type substrate, consider, thin is more suitable, less than 400 μ m preferably, be more preferably below 350 μ m, being more preferably below 300 μ m, being more preferably below 250 μ m, is particularly preferably below 200 μ m, below 180 μ m, below 170 μ m, below 160 μ m or below 150 μ m.The method according to this invention, even if in the situation that the so thin insulated substrate of use also can suppress the generation of substrate warp.Although the lower limit of the thickness of insulated substrate 21 is not particularly limited,, the viewpoint of the disposal while transmitting from improving is considered, preferably more than 30 μ m, more than being more preferably 40 μ m, more than being more preferably 50 μ m, more than being more preferably 60 μ m, more than 70 μ m or more than 80 μ m.
The thermal coefficient of expansion of insulated substrate 21 can be made as identical with thermal coefficient of expansion and the glass transition temperature of aforesaid substrate 11 with glass transition temperature Tg.
The second, on insulated substrate, be provided for accommodating the chamber (Fig. 2 B) of parts.As schematically illustrated at Fig. 2 B, can the chamber 21a between the first and second interareas that connect insulated substrate be set in the position of the regulation of insulated substrate 21.About chamber 21a, consider the characteristic of insulated substrate 21, for example, can be by using the well-known method of drill bit, laser, plasma, etching media etc. to form.
Although at Fig. 2 B, only show 1 chamber 21a,, also sky is opened the interval of regulation and is provided with a plurality of chamber 21a mutually.About the spacing between the 21a of chamber, from the viewpoint of the miniaturization of parts internally-arranged type substrate, consider, short is suitable.Spacing between the 21a of chamber can be established identically with the spacing between above-mentioned chamber 12a.It is identical that each spacing between the 21a of chamber there is no need to spread all over insulated substrate, also can be different.
The opening shape of chamber 21a can be made as identical with opening shape and the opening size of above-mentioned chamber 12a with opening size.It is identical that the opening shape of chamber 21a and opening size there is no need to spread all over insulated substrate, also can be different.
The 3rd, at the stacked interim fabricated material of the second interarea (Fig. 2 C) of insulated substrate.As interim fabricated material, as long as have when parts are assembled temporarily, sufficient fusible adhesive surface is shown, be just not particularly limited the well-known interim fabricated material arbitrarily before can using.In the schematically illustrated scheme of Fig. 2 C, the mode that membranaceous interim fabricated material 24 is engaged with this this adhesive surface of interim fabricated material 24 and the second interarea of insulated substrate is carried out stacked.Thus, the adhesive surface of interim fabricated material 24 exposes via chamber 21a.The example of membranaceous interim fabricated material is same as described above.
The 4th, parts are assemblied in temporarily to the adhesive surface (Fig. 2 D) of the interim fabricated material exposing via chamber.In the schematically illustrated scheme of Fig. 2 D, parts 25 are assemblied in temporarily to the adhesive surface of the interim fabricated material 24 exposing via chamber 21a.The example of parts 25 is same as described above.Can in all chambeies, use identical parts 25, also can use different parts 25 by each chamber.
Above, although an example preparing the order of the interim assembly type insulated substrate of parts has been described with reference to Fig. 2 A to Fig. 2 D,, as long as can obtain the interim assembly type insulated substrate of parts, be just not limited to above-mentioned order.For example, also can, after interim fabricated material 24 is layered in to the second interarea of insulated substrate, form chamber 21a.Use the scheme of the interim assembly type insulated substrate of the parts manufacture component internally-arranged type substrate of preparing by such variation also within the scope of the invention.
< adhesive film >
In the manufacture method of parts internally-arranged type circuit board of the present invention, use the first adhesive film and the second adhesive film.
(the first adhesive film)
End face at schematically illustrated the first adhesive film of Fig. 3.The first adhesive film 100 comprises the first supporting mass 101 and the first heat-curing resin synthetic layer 102 engaging with this first supporting mass.
As the first supporting mass, for example, can enumerate the film, metal forming, the release liners that by plastic material, are formed, the film preferably being formed by plastic material, metal forming.
In the situation that use the film formed by plastic material as the first supporting mass, as plastic material, for example, can enumerate PETG (polyethylene terephthalate, below, sometimes referred to as " PET ".), PEN (polyethylene naphthalate, below, sometimes referred to as " PEN ".) etc. polyester, Merlon (polycarbonate, below, sometimes referred to as " PC ".), polymethyl methacrylate (polymethylmethacrylate, PMMA) acrylate, cyclic polyolefin (polyolefin), the Triafol T (triacetylcellulose such as, TAC), polyether sulfides (polyether sulfide, PES), polyether-ketone (polyether ketone), polyimides etc.Wherein, more preferably PETG, PEN, particularly preferably cheap PETG.
In the situation that using metal forming as the first supporting mass, as metal forming, for example, can enumerate Copper Foil, aluminium foil etc., preferably Copper Foil.As Copper Foil, the paper tinsel that can use the elemental metals by copper to form, the paper tinsel that also can use for example, alloy by copper and other metal (, tin, chromium, silver, magnesium, nickel, zirconium, silicon, titanium etc.) to form.
About the first supporting mass, can implement matte management (matte process), corona treatment (corona process) at the face engaging with the first heat-curing resin synthetic layer described later.
In addition,, as the first supporting mass, also can use the subsidiary release stratotype supporting mass that has release layer at the mask engaging with the first heat-curing resin synthetic layer described later.As the mould release using in the release layer at subsidiary release stratotype supporting mass, for example, can enumerate the more than a kind mould release of the group selection from being formed by alkyd resins (alkyd resin), vistanex, polyurethane resin and silicone resin.Subsidiary release stratotype supporting mass can be used the commodity of selling on the market, for example, can enumerate as have using alkyd resins be mould release as the PET film of the release layer of principal component, LINTEC(strain) " SK-1 ", " AL-5 ", " AL-7 " etc. of system.
Although the thickness of the first supporting mass is not particularly limited,, the scope of 5 μ m~75 μ m preferably, is more preferably the scope of 10 μ m~60 μ m.In addition, in the situation that using subsidiary release stratotype supporting mass, preferably the thickness of subsidiary release stratotype supporting mass integral body is above-mentioned scope.
As described later, the first supporting mass also can contain laser absorption material.As laser absorption material, for example, can enumerate metallic compound powder, carbon dust, metal powder, black dyes etc.In the situation that containing laser absorption material, preferably the amount of the laser absorption material in the first supporting mass is 0.05~40 quality %, is more preferably 0.1~20 quality %.
The resin composition using in the first heat-curing resin synthetic layer is not particularly limited, as long as its solidfied material has sufficient hardness and insulating properties.From the coefficient of thermal expansion of the insulating barrier that makes to obtain, reduce and prevent that the viewpoint of crack that the difference by the thermal expansion of insulating barrier and conductor layer causes, generation that circuit is out of shape from considering, the resin composition preferably using in the first heat-curing resin synthetic layer comprises inorganic filling material.
Amount about the inorganic filling material in resin composition, the viewpoint reducing from the coefficient of thermal expansion of the insulating barrier that makes to obtain is considered, preferably more than 30 quality %, more than being more preferably 40 quality %, more than being more preferably 50 quality %, more than being more preferably 60 quality %, be particularly preferably more than 62 quality %, more than 64 quality % or more than 66 quality %.About the upper limit of the amount of the inorganic filling material in resin composition, from the viewpoint of the mechanical strength of the insulating barrier that obtains, consider, preferably, below 90 quality %, be more preferably below 85 quality %.
In addition, in the present invention, the amount of each composition in resin composition is the value when total quality of the nonvolatile component in resin composition is made as to 100 quality %.
As inorganic filling material, for example, can enumerate silicon dioxide (silica), aluminium oxide (alumina), glass, cordierite (cordierite), Si oxide, barium sulfate, talcum, clay (clay), mica powder, aluminium hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, magnesium oxide, boron nitride, aluminium nitride, nitrogenized manganese, aluminium borate, barium titanate, strontium titanates, calcium titanate, magnesium titanate, bismuth titanates, titanium oxide, barium zirconate, calcium zirconate, basic zirconium phosphate and phosphoric acid wolframic acid zirconium etc.Among them, especially the silicon dioxide such as amorphous silica, fused silica, crystalline silica, synthetic silica, hollow silica particularly preferably.In addition, as silicon dioxide, preferred spherical silicon dioxide.Inorganic filling material can be used separately a kind, also can combine two or more uses.The spheroidal fused silicon dioxide of selling as market, for example, can enumerate (strain) ADMATECHS system " SOC2 ", " SOC1 ".
Average grain diameter about inorganic filling material, from improving the mobility of resin composition, realizing the imbedibility of sufficient parts and the viewpoint of chamber fillibility considers, the scope of 0.01 μ m~4 μ m preferably, be more preferably the scope of 0.05 μ m~2 μ m, be more preferably the scope of 0.1 μ m~1 μ m, be more preferably the scope of 0.3 μ m~0.8 μ m.The average grain diameter of inorganic filling material can be measured by the laser diffraction and scattering method based on MieShi scattering theory.Specifically, can utilize laser diffraction and scattering formula particle size distribution measurement device with volume reference, to make the particle size distribution of inorganic filling material, using its median diameter (median diameter) as average grain diameter, thus, measure.About measuring sample, can preferably use the sample that utilizes ultrasonic wave that inorganic filling material is dispersed in water.As laser diffraction and scattering formula particle size distribution measurement device, can use (strain) to rise abruptly to make made " LA-500 " etc.
About inorganic filling material, from improving moisture-proof and dispersed viewpoint is considered, preferably using amino silane (amino silane) is that coupling agent, epoxy silane (epoxy silane) are that coupling agent, hydrosulphonyl silane (mercapto silane) are that coupling agent, silane series coupling agent, organosilazanes (organo-silazane) compound, titanate (titanate) are that a kind of above surface conditioning agent of coupling agent etc. is processed.Market merchandising as surface conditioning agent, for example, can enumerate SHIN-ETSU HANTOTAI's chemical industry (strain) system " KBM403 " (3-(2, 3-epoxy the third oxygen) propyl trimethoxy silicane (3-Glycidoxypropyltrimethoxysilane)), SHIN-ETSU HANTOTAI's chemical industry (strain) system " KBM803 " (3-sulfydryl propyl trimethoxy silicane (3-Mercaptopropyltrimethoxysilane)), SHIN-ETSU HANTOTAI's chemical industry (strain) system " KBE903 " (APTES (3-aminopropyltriethoxysilane)), SHIN-ETSU HANTOTAI's chemical industry (strain) system " KBM573 " (N-phenol-3-TSL 8330 (N-phenol-3-aminopropyltrimethoxysilane)), SHIN-ETSU HANTOTAI's chemical industry (strain) system " SZ-31 " (hexamethyldisiloxane (hexamethyldisilazane)) etc.
About the surface-treated degree of utilizing surface conditioning agent to carry out, carbon amount that can be average by the per surface area of inorganic filling material is evaluated.About the average carbon amount of the per surface area of inorganic filling material, from improving the dispersed viewpoint of inorganic filling material, consider, preferably 0.02mg/m
2above, be more preferably 0.1mg/m
2above, be more preferably 0.2mg/m
2above.On the other hand, from preventing the viewpoint consideration of the melting viscosity of resin varnish (varnish) or the rising of the melting viscosity film form, be preferably 1mg/m
2below, 0.8mg/m more preferably
2below, 0.5mg/m more preferably
2below.
The average carbon amount of per surface area of inorganic filling material can be carried out clean measurement afterwards by the inorganic filling material after for example, processing with solvent (, methyl ethyl ketone (methyl ethyl ketone, MEK)) effects on surface.Specifically, as solvent, the MEK measuring is fully joined with surface conditioning agent and carries out surface treatment inorganic filling material afterwards, at 25 ℃, carry out 5 minutes Ultrasonic Cleanings.Can be removing upper clear liquid, make solid state component dry after, use carbon analysis meter to measure the average carbon amount of per surface area of inorganic filling material.As carbon analysis meter, can use (strain) to rise abruptly to make made " EMIA-320V " etc.
As the heat-curing resin using in the first heat-curing resin synthetic layer, can use the well-known heat-curing resin in the past using when forming the insulating barrier of printed wiring board, wherein, preferred epoxy especially.In one embodiment, the resin composition using in the first heat-curing resin synthetic layer comprises inorganic filling material and epoxy resin.In addition, as required, resin composition can also comprise curing agent.In one embodiment, the resin composition using in the first heat-curing resin synthetic layer comprises inorganic filling material, epoxy resin and curing agent.The resin composition using in the first heat-curing resin synthetic layer also can also comprise the additives such as thermoplastic resin, curing accelerator, fire retardant and rubber particles.
Below, to describing as epoxy resin, curing agent and the additive of the materials'use of resin composition.
-epoxy resin-
As epoxy resin, for example, can enumerate bis-phenol (bisphenol) A type epoxy resin, bisphenol f type epoxy resin, bisphenol-s epoxy resin, bisphenol AF type epoxy resin, bicyclopentadiene (dicyclopentadiene) type epoxy resin, trisphenol (trisphenol) type epoxy resin, naphthol novolac (naphthol novolac) type epoxy resin, phenol phenol aldehyde type epoxy resin, tert-butyl (butyl)-benzene phosphorus diphenol (catechol) type epoxy resin, naphthalene (naphthalene) type epoxy resin, naphthols (naphthol) type epoxy resin, anthracene (anthracene) type epoxy resin, glycidyl amine (glycidyl amine) type epoxy resin, ethylene oxidic ester (glycidyl ester) type epoxy resin, cresol-novolak (cresol novolac) type epoxy resin, biphenyl (biphenol) type epoxy resin, wire aliphatic epoxy resin, the epoxy resin with butadiene (butadiene) structure, alicyclic epoxy resin, hetero ring type epoxy resin, containing volution epoxy resin, cyclohexanedimethanol (cyclohexanedimethanol) type epoxy resin, naphthol ethyl ether (naphthylene ether) type epoxy resin and trihydroxy methyl type epoxy resin etc.Epoxy resin can be used separately a kind, or, also can be used together two or more.
Preferred epoxy is included in the epoxy resin in 1 molecule with 2 above epoxy radicals.In the situation that the nonvolatile component of epoxy resin is made as to 100 quality %, preferably at least 50 quality % above for having the epoxy resin of more than 2 epoxy radicals in 1 molecule.Wherein, be especially preferably included in 1 molecule, there are 2 above epoxy radicals, 20 ℃ of temperature for aqueous epoxy resin (following, be called " liquid epoxy resin ".) and in 1 molecule, have more than 3 epoxy radicals, 20 ℃ of temperature for the epoxy resin of solid shape (following, be called " solid shape epoxy resin ".)。By also using liquid epoxy resin and solid shape epoxy resin as epoxy resin, thereby can obtain thering is outstanding flexual resin composition.In addition, cured resin synthetic and the fracture strength of the insulating barrier that forms also can improve.
As liquid epoxy resin, preferred bisphenol A type epoxy resin, bisphenol f type epoxy resin, phenol phenol aldehyde type epoxy resin or naphthalene type epoxy resin, more preferably bisphenol A type epoxy resin, bisphenol f type epoxy resin or naphthalene type epoxy resin.Object lesson as liquid epoxy resin, can enumerate DIC(strain) system " HP4032 ", " HP4032D ", " HP4032SS " (naphthalene type epoxy resin), " jER828EL " (bisphenol A type epoxy resin) of Mitsubishi Chemical's (strain) system, " jER807 " (bisphenol f type epoxy resin), " jER152 " (phenol phenol aldehyde type epoxy resin), " ZX1059 " (melange of bisphenol A type epoxy resin and bisphenol f type epoxy resin) of aurification (strain) system lived by Nippon Steel, NAGASECHEMTEX(strain) " EX-721 " (glycidyl ester type epoxy resin) of system.They can use separately a kind, or, also can be used together two or more.
As solid shape epoxy resin, preferably 4 officials can naphthalene type epoxy resin, cresol-novolak type epoxy resin, dicyclopentadiene-type epoxy resin, triphen phenol-type epoxy resin, naphthol novolac type epoxy resin, biphenyl type epoxy resin or naphthol ethyl ether type epoxy resin, more preferably 4 officials can naphthalene type epoxy resin, biphenyl type epoxy resin or naphthol ethyl ether type epoxy resin, more preferably biphenyl type epoxy resin.As the object lesson of solid shape epoxy resin, can enumerate DIC(strain) system " HP-4700 ", " HP-4710 " (4 officials' energy naphthalene type epoxy resin), " N-690 " (cresol-novolak type epoxy resin), " N-695 " (cresol-novolak type epoxy resin), " HP-7200 " (dicyclopentadiene-type epoxy resin), " EXA7311 ", " EXA7311-G3 ", " EXA7311-G4 ", " EXA7311-G4S ", " HP6000 " (naphthol ethyl ether type epoxy resin), " EPPN-502H " (trisphenol epoxy resin) of Japan's chemical drug (strain) system, " NC7000L " (naphthol novolac epoxy resin), " NC3000H ", " NC3000 ", " NC3000L ", " NC3100 " (biphenyl type epoxy resin), " ESN475 " (naphthol novolac type epoxy resin) of aurification (strain) system is lived by Nippon Steel, " ESN485V " (naphthol novolac type epoxy resin), " YX4000H " of Mitsubishi Chemical's (strain) system, " YL6121 " (biphenyl type epoxy resin), " YX4000HK " (bis-xylene phenol (bixylenol) type epoxy resin), " PG-100 " of Osaka gas chemistry (strain) system, " CG-500 ", " YL7800 " (fluorenes (fluorene) type epoxy resin) of Mitsubishi Chemical's (strain) system etc.
As epoxy resin, also with liquid epoxy resin and solid shape epoxy resin in the situation that, preferably their amount is than (liquid epoxy resin: solid shape epoxy resin) be in mass ratio the scope of 1:0.1~1:4.By making the amount of liquid epoxy resin and solid shape epoxy resin than the scope for such, thereby following effect can be obtained, that is, i) in the situation that use with the form of adhesive film, suitable adhesiveness can be realized; Ii) in the situation that use with the form of adhesive film, can obtain sufficient pliability, improve and dispose property; And the insulating barrier that iii) can obtain having sufficient fracture strength, etc.From above-mentioned i) viewpoint of~effect iii) considers, preferably liquid epoxy resin with the amount of solid shape epoxy resin than (liquid epoxy resin: solid shape epoxy resin) be in mass ratio the scope of 1:0.3~1:3.5, being more preferably the scope of 1:0.6~1:3, is particularly preferably the scope of 1:0.8~1:2.5.
The amount of the epoxy resin in resin composition is preferably 3 quality %~50 quality %, 5 quality %~45 quality % more preferably, and more preferably 5 quality %~40 quality %, are particularly preferably 7 quality %~35 quality %.
The epoxide equivalent of preferred epoxy is 50~3000, is more preferably 80~2000, is more preferably 110~1000.By becoming this scope, thereby the key density of solidfied material becomes abundant and realizes the insulating barrier that surface roughness is low.In addition, epoxide equivalent is the quality of the resin of the epoxy radicals that can measure according to JISK7236, comprise 1 equivalent.
-curing agent-
As curing agent, as long as there is the function that makes epoxy resin cure, just be not particularly limited, for example, can enumerate phenol is that curing agent, naphthols are that curing agent, active ester are that curing agent, benzodiazine (benzooxazine) are that curing agent and cyanate (cyanate ester) are curing agent.Curing agent can be used separately a kind, or, also can be used together two or more.
As phenol, be that curing agent and naphthols are curing agent, from the viewpoint of thermal endurance and resistance to water, consider, the phenol preferably with phenolic structure is that curing agent or the naphthols with phenolic structure are curing agent.In addition, from the viewpoint of the close property with conductor layer (wiring), consider, preferred nitrogenous phenol is curing agent, and the phenol that more preferably contains triazine (triazine) skeleton is curing agent.Wherein, from highly meeting thermal endurance, resistance to water and considering with the viewpoint of the close property (peel strength) of conductor layer, especially preferably use the phenol phenolic resins that contains triazine skeleton as curing agent.
As phenol, be that curing agent and naphthols are the object lesson of curing agent, for example, can enumerate bright and change into " MEH-7700 ", " MEH-7810 ", " MEH-7851 " of (strain) system, " NHN ", " CBN ", " GPH ", Dongdu of Japanese chemical drug (strain) system change into " SN170 ", " SN180 ", " SN190 ", " SN475 ", " SN485 ", " SN495 ", " SN375 ", " SN395 ", the DIC(strain of (strain) system) " LA7052 ", " LA7054 " of system, " LA3018 " etc.
Although be that curing agent is not particularly limited as active ester, but, in general, ester class of preferably using phenol ester (phenol ester) class, benzenethiol ester (thiophenol ester) class, N-hydroxylamine ester (N-hydroxy amine ester) class, heterocycle hydroxyl compound etc. has the compound of the ester group that more than 2 reactivity is high in 1 molecule.Preferably this active ester is that the condensation reaction that curing agent passes through carboxylic acid compound and/or thiocarboxylic acid (thiocarboxylic acid) compound and hydroxy compounds and/or mercaptan (thiol) compound obtains.Particularly, from improving stable on heating viewpoint, consider, the active ester preferably being obtained by carboxylic acid compound and hydroxy compounds is curing agent, and the active ester more preferably being obtained by carboxylic acid compound and oxybenzene compound and/or naphthol compound is curing agent.As carboxylic acid compound, for example, can enumerate benzoic acid, acetic acid, butanedioic acid, maleic acid (maleic acid), itaconic acid (itaconic acid), phthalandione (phthalic acid), isophathalic acid (isophthalic acid), terephalic acid (terephthalic acid), pyromellitic acid (pyromellitic acid) etc.As oxybenzene compound or naphthol compound, for example, can enumerate hydroquinones (hydroquinone), resorcinol (resorcin), bisphenol-A, Bisphenol F, bisphenol S, phenolphthalein (phenol phthalin), bisphenol-A methylates, Bisphenol F methylates, bisphenol S methylates, phenol, o-cresols (cresol), m-cresols, p-cresols, benzene phosphorus diphenol, alpha-Naphthol, betanaphthol, 1, 5-dihydroxy naphthlene, 1, 6-dihydroxy naphthlene, 2, 6-dihydroxy naphthlene, dihydroxy benzenes ketone (benzophenone), trihydroxy benzene ketone, tetrahydroxy benzene ketone, phloroglucin (phloroglucin), benzenetriol (benzenetriol), dicyclopentadiene-type biphenol compound, phenol phenolic aldehyde etc.At this, so-called " dicyclopentadiene-type biphenol compound ", what say is two phenol molecules of condensation and the biphenol compound that obtains in a bicyclopentadiene molecule.
Specifically; the active ester compound of the active ester compound of acetyl group (acetyl) compound that preferably comprise the active ester compound of dicyclopentadiene-type biphenol structure, the active ester compound that comprises naphthalene structure, comprises phenol phenolic aldehyde, benzoyl (benzoyl) compound that comprises phenol phenolic aldehyde; wherein, especially comprise naphthalene structure active ester compound, comprise dicyclopentadiene-type biphenol structure active ester compound more preferably.So-called " dicyclopentadiene-type biphenol structure ", represents the structural units by the divalent of phenylene (phenylene)-bis-cyclopentylene (dicyclopentalene)-phenylene formation.
It as active ester, is the market merchandising of curing agent, as the active ester compound that comprises dicyclopentadiene-type biphenol structure, can enumerate " EXB9451 ", " EXB9460 ", " EXB9460S ", " HPC-8000-65T " (DIC(strain) system), as the active ester compound that comprises naphthalene structure, can enumerate " EXB9416-70BK " (DIC(strain) system), active ester compound as the acetyl group compound that comprises phenol phenolic aldehyde, can enumerate " DC808 " (Mitsubishi Chemical's (strain) system), active ester compound as the benzoyl compound that comprises phenol phenolic aldehyde, can enumerate " YLH1026 " (Mitsubishi Chemical's (strain) system) etc.
As benzodiazine, be the object lesson of curing agent, can enumerate " P-d ", " F-a " that " HFB2006M ", four countries clear and macromolecule (strain) system change into industry (strain) system.
As cyanate, be curing agent, for example, can enumerate bisphenol-A dicyanate (dicyanate), polyphenyl phenol cyanate (polyphenolcyanate), oligomeric (3-methylene-1,5-phenylene cyanate) (oligo(3-methylene-1,5-phenylenecyanate)), 4,4'-methylene two (2,6-xylenol cyanate) (4,4'-methylenebis(2,6-dimethylphenylcyanate)), 4,4'-ethylidene (ethylidene) biphenol dicyanate, hexafluoro (hexafluoro) bisphenol-A dicyanate, 2,2-bis-(4-cyanate) phenol propane, 1,1-bis-(4-cyanate phenol methane), two (4-cyanate-MX) methane, 1,3-bis-(4-cyanate phenol-1-(methyl ethylidene)) benzene, two (4-cyanate phenol) thioethers (thioether) and can cyanate ester resins by 2 officials such as two (4-cyanate phenol) ether, the derivative multifunctional cyanate ester resins such as phenol phenolic aldehyde and cresol-novolak, these cyanate ester resin parts are carried out the prepolymer of triazine etc.As cyanate, be the object lesson of curing agent, can enumerate Lonza Japan(strain) " PT30 " and " PT60 " (being all phenol phenol aldehyde type multifunctional cyanate ester resin), " BA230 " (part or all of bisphenol-A dicyanate become the prepolymer of three amount bodies by triazine) etc. of system.
Amount ratio about epoxy resin with curing agent, presses [total number of the epoxy radicals of epoxy resin]: the ratio of [total number of the reactive group of curing agent], preferably the scope of 1:0.2~1:2, is more preferably 1:0.3~1:1.5, is more preferably 1:0.4~1:1.At this, the reactive group of so-called curing agent, is active hydroxy, active ester groups etc., according to the kind of curing agent and different.In addition, the total number of the epoxy radicals of so-called epoxy resin, it is the value that the solid state component quality of each epoxy resin is added up to all epoxy resin divided by the value of epoxide equivalent, the total number of the reactive group of so-called curing agent is the value that the solid state component quality of each curing agent is added up to all curing agent divided by the value of reactive group equivalent.By making epoxy resin and the amount ratio of curing agent, be such scope, thereby the thermal endurance of the solidfied material of resin composition can further improve.
In one embodiment, the resin composition using in the first heat-curing resin synthetic layer comprises above-mentioned inorganic filling material, epoxy resin and curing agent.In resin composition, preferably as inorganic filling material, comprise silicon dioxide, the mixture that comprises liquid epoxy resin and solid shape epoxy resin as epoxy resin (preferred liquid epoxy resin: the scope that the mass ratio of solid shape epoxy resin is 1:0.1~1:4, the scope of 1:0.3~1:3.5 more preferably, the scope of 1:0.6~1:3 more preferably, be particularly preferably the scope of 1:0.8~1:2.5), as curing agent, comprise from being curing agent by phenol, naphthols is curing agent, active ester is that curing agent and cyanate are that a kind of the group selection that forms of curing agent is above (preferably from being curing agent by phenol, naphthols is the more than a kind of group selection that curing agent forms, be more preferably from the phenol phenolic resins by containing triazine skeleton, naphthols is the more than a kind of group selection that curing agent forms, be more preferably the curing agent that comprises the phenol phenolic resins that contains triazine skeleton).The resin composition that comprises so specific composition about combining, although the preferred amount of inorganic filling material, epoxy resin and curing agent as mentioned above, but, wherein, especially preferably the amount of inorganic filling material is that the amount of 30 quality %~90 quality %, epoxy resin is 3 quality %~50 quality %, and more preferably the amount of inorganic filling material is that the amount of 50 quality %~90 quality %, epoxy resin is 5 quality %~45 quality %.Amount about curing agent, preferably so that the mode of the scope that the ratio of the total number of the total number of the epoxy radicals of epoxy resin and the reactive group of curing agent is 1:0.2~1:2 contain, the more preferably scope of 1:0.3~1:1.5, the more preferably scope of 1:0.4~1:1.
As required, resin composition can also comprise the additives such as thermoplastic resin, curing accelerator, fire retardant and rubber particles.
-thermoplastic resin-
As thermoplastic resin, for example, can enumerate phenoxy resin, polyvinyl acetal resin (polyvinyl acetal resin), vistanex, polybutadiene, polyimide resin, polyamidoimide (polyamideimide) resin, polyether sulfone (polyethersulfone) resin, polyphenylene oxide resin and polysulfone resin etc.Thermoplastic resin can be used separately a kind, or, also can be used together two or more.
The scope that preferably weight average molecular weight of carrying out polystyrene (polystyrene) conversion of thermoplastic resin is 8000~70000, more preferably 10000~60000 scope, more has the scope of electing 20000~60000 as.The gel permeation chromatography for weight average molecular weight that carries out polystyrene conversion (the Gel Permeation Chromatography: GPC) method is measured of thermoplastic resin.Specifically, the weight average molecular weight of carrying out polystyrene conversion about thermoplastic resin, can use the LC-9A/RID-6A processed of (strain) Shimadzu Seisakusho Ltd. as measurement mechanism, use clear and electrician's (strain) Shodex K-800P/K-804L/K-804L processed as chromatographic column (column), use chloroforms (chloroform) etc. are as mobile phase, at 40 ℃ of column temperatures, measure, use the inspection amount line of polystyrene standard to calculate.
As phenoxy resin, for example, can enumerate the phenoxy resin of the more than a kind skeleton with the group selection from being formed by bisphenol-A skeleton, Bisphenol F skeleton, bisphenol S skeleton, biphenol phenyl methyl ketone skeleton, phenolic aldehyde skeleton, biphenyl backbone, fluorene skeleton, bicyclopentadiene skeleton, norborene (norbornene) skeleton, naphthalene skeleton, anthracene skeleton, adamantane (adamantane) skeleton, terpenes (terpene) skeleton and trimethyl cyclohexylamine (trimethyl cyclohexane) skeleton.The end of phenoxy resin can be any functional group of phenol hydroxy, epoxy radicals etc.Phenoxy resin can be used separately a kind, or, also can be used together two or more.Object lesson as phenoxy resin, can enumerate " 1256 " and " 4250 " (being all the phenoxy resin that contains bisphenol-A skeleton) of Mitsubishi Chemical's (strain) system, " YX8100 " (phenoxy resin that contains bisphenol S skeleton) and " YX6954 " (phenoxy resin that contains biphenol phenyl methyl ketone (bisphenol acetophenone) skeleton), in addition, also can enumerate " FX280 " and " FX293 " that Dongdu changes into (strain) system, " YL7553 " of Mitsubishi Chemical's (strain) system, " YL6794 ", " YL7213 ", " YL7290 " and " YL7482 " etc.
As the object lesson of polyvinyl acetal resin, can enumerate electrochemical butyral (butyral) 4000-2,5000-A, 6000-C, the 6000-EP of electrochemical industry (strain) system, the S-REC BH series of ponding chemical industry (strain) system, BX is serial, KS is serial, BL is serial, BM is serial etc.
As the object lesson of polyimide resin, can enumerate " the RIKACOAT(registered trade mark) SN20 " and " RIKACOAT PN20 " of new Japanese physics and chemistry (strain) system.In addition, as the object lesson of polyimide resin, can enumerate the wire polyimides (JP 2006-37083 communique) that 2 functionality C-terminal polybutadiene, diisocyanate cpd and tetra-atomic acid anhydride is reacted and obtain, the modified polyimides such as polyimides (JP 2002-12667 communique and JP 2000-319386 communique etc.) that contain polysiloxane (polysiloxane) skeleton.
As the object lesson of polyamide-imide resin, can enumerate " the VYLOMAX HR11NN " and " VYLOMAX HR16NN " of Japan's weaving (strain) system.In addition,, as the object lesson of polyamide-imide resin, can enumerate the modified polyamide imides such as the polyamidoimide " KS9100 " containing polysiloxane skeleton that Hitachi changes into industry (strain) system, " KS9300 ".
As the object lesson of polyethersulfone resin, can enumerate " PES5003P " of Sumitomo Chemical (strain) system etc.
As the object lesson of polysulfone resin, can enumerate the polysulfones " P1700 ", " P3500 " of Su Wei high performance plastics Co., Ltd (Solvay advanced polymers) (strain) system etc.
The amount of the thermoplastic resin in preferred resin synthetic is 0.1 quality %~20 quality %.By making the amount of thermoplastic resin, be such scope, moderate thereby the viscosity of resin composition becomes, can form thickness, the uniform resin composition of bulk density (bulk) proterties.The amount of the thermoplastic resin in preferred resin synthetic is 0.5 quality %~10 quality %.
-curing accelerator-
As curing accelerator, for example, can enumerate phosphorus is that curing accelerator, amine (amine) are that curing accelerator, imidazoles (imidazole) are that curing accelerator, guanidine (guanidine) are curing accelerator etc., preferably phosphorus is that curing accelerator, amine are that curing accelerator, imidazoles are curing accelerator, and more preferably amine is that curing accelerator, imidazoles are curing accelerator.
As phosphorus, it is curing accelerator, for example, can enumerate triphenylphosphine (triphenylphosphine), boric acid phosphide (phosphonium borate) compound, tetraphenyl boron tetraphenylphosphonium (tetraphenylphosphoniumtetraphenylborate), n-butyl boron tetraphenylphosphonium (n-butylphosphoniumtetraphenylborate), tetrabutyl phosphorus caprate, (4-methylphenol) triphenyl phosphorus thiocyanates ((4-methylphenyl) triphenylphosphonium thiocyanate), tetraphenylphosphonium thiocyanates, butyl triphenyl phosphorus thiocyanates etc., triphenylphosphine, tetrabutyl phosphorus caprate.
As amine, be curing accelerator, for example, can enumerate trialkylamine, 4-dimethylamino yl pyrimidines, the benzyl dimethyl amine (benzyldimethylamine), 2 such as triethylamine, tri-butylamine, 4,6 ,-tri-(dimethylaminomethyl) phenol, 1,8-bis-nitrine dicyclos (5,4,0)-endecatylene (undecane) etc., preferred 4-dimethylamino yl pyrimidines, 1,8-bis-nitrine dicyclos (5,4,0)-endecatylene.
As imidazoles, be curing accelerator, for example, can enumerate glyoxal ethyline, 2-undecyl (undecyl) imidazoles, 2-heptadecyl (heptadecyl) imidazoles, 1,2-methylimidazole, 2-ethyl-4-methylimidazole, 1,2-methylimidazole, 2-ethyl-4-methylimidazole, 2-phenol imidazoles, 2-phenol-4-methylimidazole, 1 benzyl 2 methyl imidazole, 1-benzyl-2-phenol imidazoles, 1-cyanoethyl (cyanoethyl)-glyoxal ethyline, 1-cyanoethyl-2-undecyl imidazole, 1-cyanoethyl-2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenol imidazoles, 1-cyanoethyl-2-undecyl imidazole trimellitic acid salt, 1-cyanoethyl-2-phenol imidazoles trimellitic acid salt, 2,4-diaminourea-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diaminourea-6-[2'-undecyl imidazole base-(1')]-ethyl-s-triazine, 2,4-diaminourea-6-[2'-ethyl-4'-methylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diaminourea-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine cyanuric acid adduct, 2-phenol imidazoles cyanuric acid adduct, 2-phenol-4,5-dihydroxy methylimidazole, 2-phenol-4-methyl-5 hydroxymethyl imidazoles, 2,3-dihydro-1H-pyrrolo-[1,2-a] benzimidazole, 1-dodecyl-2-methyl-3-benzyl imidazole chloride, glyoxal ethyline quinoline, the adduct of the imidazolium compoundss such as 2-phenol imidazoline and imidazolium compounds and epoxy resin, preferably 2-ethyl-4-methylimidazole, 1-benzyl-2-phenol imidazoles.
As guanidine, it is curing accelerator, for example, can enumerate dicyandiamide, 1-methylguanidine, 1-ethyl guanidine, 1-cyclohexyl guanidine, 1-phenol guanidine, 1-(o-tolyl) guanidine, dimethylguanidine, biphenol guanidine, trimethyl guanidine, TMG, pentamethyl guanidine, 1, 5, 7-tri-nitrine dicyclo [4.4.0] last of the ten Heavenly stems-5-alkene, 7-methyl isophthalic acid, 5, 7-tri-nitrine dicyclo [4.4.0] last of the ten Heavenly stems-5-alkene, 1-methyl biguanides, 1-ethyl biguanides, 1-n-butyl biguanides, 1-n-octadecyl biguanides, 1, 1-dimethyl biguanides, 1, 1-diethyl biguanides, 1-cyclohexyl biguanides, 1-pi-allyl biguanides, 1-phenol biguanides, 1-(o-tolyl) biguanides etc., preferred dicyandiamide, 1, 5, 7-tri-nitrine dicyclo [4.4.0] last of the ten Heavenly stems-5-alkene.
Curing accelerator can be used separately a kind, also can combine two or more uses.About the amount of the curing accelerator in resin composition, preferably, when the nonvolatile component total amount of epoxy resin and curing agent is made as to 100 quality %, in the scope of 0.05 quality %~3 quality %, use.
-fire retardant-
As fire retardant, for example, the phosphorus compound that can enumerate organic phosphorus flame retardant, contain organic system nitrogen, nitrogen compound, silicone-based fire retardant, metal hydroxides etc.Fire retardant can be used separately a kind, or, also can be used together two or more.Although the amount of the fire retardant in resin composition layer is not particularly limited,, preferably 0.5 quality %~10 quality %, is more preferably 1 quality %~9 quality %, is more preferably 1.5 quality %~8 quality %.
-rubber particles-
As rubber particles, for example, can use and be insoluble to organic solvent described later, the rubber particles also not mixing with above-mentioned epoxy resin, curing agent and thermoplastic resin etc.In general, such rubber particles can not be dissolved in the grade of organic solvent or resin and make particle shape and modulate by the molecular weight of rubber constituent is increased to.
As rubber particles, for example, can enumerate nucleocapsid (core-shell) type rubber particles, bridge formation acrylonitrile butadiene rubber particle, bridge formation styrene butadiene ribber particle, acrylic rubber particle etc.Nucleocapsid type rubber particle is the rubber particles with stratum nucleare and shell, for example, can enumerate outer field shell by glassy polymers forms, the stratum nucleare of internal layer consists of rubber-like polymer 2 layers of structure or outer field shell by glassy polymers form, intermediate layer is by nucleocapsid type rubber grain of the 3-tier architecture that rubber-like polymer forms, stratum nucleare consists of glassy polymers etc.Glassy polymers layer is such as consisting of methylmethacrylate polymer etc., and rubber-like polymer layer is such as by formations such as butyl acrylate things (butyl rubber).Rubber particles can be used separately a kind, or, also can be used together two or more.
The average grain diameter of preferred rubber particle is the scope of 0.005 μ m~1 μ m, is more preferably the scope of 0.2 μ m~0.6 μ m.The average grain diameter of rubber particles can be used dynamic light scattering method to measure.For example, can measure in the following manner, that is, utilize ultrasonic wave etc. that rubber particles is evenly dispersed in suitable organic solvent, using dense is granularmetric analysis device (FPAR-1000; Large tomb electronics (strain) system), the particle size distribution of making rubber particles with quality criteria, using its median diameter as average grain diameter.The amount of the rubber particles in preferred resin synthetic is 1 quality %~10 quality %, more preferably 2 quality %~5 quality %.
As required, the resin composition using in the first heat-curing resin synthetic layer can comprise other additive, as other such additive, for example, can enumerate the organo-metallic compounds such as organocopper compound, organic zinc compound and organic cobalt compound, and the resin additive such as organic filler, tackifier, defoamer, levelling agent (leveling agent), close property imparting agent and colouring agent etc.
Although the thickness of the first heat-curing resin synthetic layer depends on the thickness of internal substrate etc.,, from the viewpoint of the slimming of parts internally-arranged type circuit board, consider, preferably below 100 μ m, be more preferably below 80 μ m, be more preferably below 60 μ m, be more preferably below 50 μ m.Although the lower limit of the thickness of the first heat-curing resin synthetic layer depends on the thickness of internal substrate etc.,, from the imbedibility of parts and the viewpoint of chamber fillibility, consider, more than being generally 15 μ m.
When manufacture component internally-arranged type circuit board, from realizing the imbedibility of sufficient parts and the viewpoint of chamber fillibility, consider, preferably the minimum melting viscosity of the first heat-curing resin synthetic layer is below 10000 pools, be more preferably below 8000 pools, be more preferably below 6000 pools, being more preferably below 4000 pools, is particularly preferably below 3000 pools.Lower limit about the minimum melting viscosity of the first heat-curing resin synthetic layer, the viewpoint of the layer conformality (preventing from oozing out) during from manufacture component internally-arranged type circuit board is considered, preferably more than 100 pools, more than being more preferably 300 pools, more than being more preferably 500 pools.
At this, " the minimum melting viscosity " of so-called heat-curing resin synthetic layer, what say is the minimum viscosity that heat-curing resin synthetic layer presents when the resin melting of heat-curing resin synthetic layer.In detail, when the programming rate with constant heats heat-curing resin synthetic layer and makes resin melting, in the starting stage, melting viscosity is along with temperature rises and reduces, after this, when surpassing certain temperature, melting viscosity is along with temperature rises and rises.So-called " minimum melting viscosity ", what say is the melting viscosity of such minimal point.The minimum melting viscosity of heat-curing resin synthetic layer can be measured by dynamic viscoelastic method.Specifically, the minimum melting viscosity of heat-curing resin synthetic layer can be by being that 60 ℃, programming rate are that 5 ℃/minute, vibration number are that 1Hz, shape become and carry out dynamic viscoelastic measurement under the condition of 1deg and obtain measure starting temperature.As dynamic viscoelastic measurement mechanism, for example, can enumerate " Rheosol-G3000 " of (strain) UBM system.
(the second adhesive film)
The second adhesive film comprises the second supporting mass and the second heat-curing resin synthetic layer engaging with this second supporting mass.
The material of the second supporting mass can be identical with material and thickness that above-mentioned the first supporting mass is described with thickness.
The material of the second heat-curing resin synthetic layer can be identical with the material that above-mentioned the first heat-curing resin synthetic layer is described.
The second heat-curing resin synthetic layer can be thinner than the first heat-curing resin synthetic layer.About the thickness of the second heat-curing resin synthetic layer, from the viewpoint of the slimming of parts internally-arranged type circuit board, consider, preferably, below 80 μ m, be more preferably below 60 μ m, be more preferably below 40 μ m, be more preferably below 30 μ m.Although the lower limit of the thickness of the first heat-curing resin synthetic layer is not particularly limited,, more than being generally 10 μ m.
About the minimum melting viscosity of the second heat-curing resin synthetic layer, the layer conformal during from manufacture component internally-arranged type circuit board becomes the viewpoint of (preventing from oozing out) to consider, preferably more than 100 pools, more than being more preferably 300 pools, more than being more preferably 500 pools.The upper limit of the minimum melting viscosity of the second heat-curing resin synthetic layer is not particularly limited, and can be made as the scope same with the scope that the first heat-curing resin synthetic layer is described.
An example of the order of making the first and second adhesive films is shown below.
About adhesive film, no matter be the first adhesive film or the second adhesive film, for example, can make in the following manner,, modulation is dissolved in the resin varnish in organic solvent by resin composition, and use dip coater (die coater) etc. is coated in this resin varnish on supporting mass, makes resin varnish dry.
As organic solvent, for example, can enumerate the amine series solvents such as the hydrocarbon class of the aromatic series such as carbitol class, toluene and dimethylbenzene, dimethyl formamide, dimethylacetylamide and 1-METHYLPYRROLIDONE such as acetates, cellosolve and butyl carbitol such as the ketones such as acetone, methyl ethyl ketone and cyclohexanone, ethyl acetate, butyl acetate, cellosolve acetate (cellosolve acetate), propylene glycol methyl ether acetate (propylene glycol monomethylether acetate) and carbitol acetate (carbitol acetate) etc.Organic solvent can be used separately a kind, or, also can be used together two or more.
The dry of resin varnish can be implemented by well-known drying means such as heating, injection hot blasts.Although according to the boiling point of the organic solvent in resin varnish and different, but, in the situation that for example use the resin varnish of the organic solvent that comprises 30 quality %~60 quality %, by be dried 3 minutes~10 minutes at 50 ℃~150 ℃, thereby can on supporting mass, form heat-curing resin synthetic layer.
About adhesive film, no matter be the first adhesive film or the second adhesive film, at the face not engaging with the supporting mass of heat-curing resin synthetic layer (that is, with the face of supporting mass opposition side), can also comprise diaphragm.Diaphragm is attached to the surface of heat-curing resin synthetic layer or prevents that scratch from contributing preventing dust etc.As the material of diaphragm, can use the material identical with the material that supporting mass is described.The thickness of diaphragm is not particularly limited, for example, be 1 μ m~40 μ m.About adhesive film, when manufacture component internally-arranged type circuit board, can use by peelling off diaphragm.
Above, although show an example of the order of making the first and second adhesive films,, as long as can obtain the first and second adhesive films, be just not limited to above-mentioned order.For example, can form heat-curing resin synthetic layer on diaphragm after, stacked supporting mass on this heat-curing resin synthetic layer and make adhesive film.So-called " supporting mass " in the present invention, say be when manufacture component internally-arranged type circuit board and heat-curing resin synthetic layer is together layered in the member of the interarea of internal substrate, the supporting member of the resin varnish while restrictively not representing to manufacture adhesive film.
Below, in conjunction with it, preferred embodiment explain the manufacture method of parts internally-arranged type circuit board of the present invention.
The method > of < the first execution mode
In the method for the first execution mode of the present invention, use circuit substrate as internal substrate.Therefore, the method for the first execution mode of the present invention comprises following operation (A1), (B1), (C1) and (D1) in order:
(A1) be equipped with on the circuit substrate of parts temporarily, to the first adhesive film of the first heat-curing resin synthetic layer that comprises the first supporting mass and engage with this first supporting mass so that this first heat-curing resin synthetic layer carries out vacuum laminated operation with the mode that the first interarea of circuit substrate engages, the described circuit substrate that is temporarily equipped with parts comprises: have the first and second interareas, be formed with the circuit substrate that connects the chamber between this first and second interarea; The interim fabricated material engaging with the second interarea of this circuit substrate; And the parts of inside that are temporarily assemblied in the chamber of described circuit substrate by described interim fabricated material;
(B1) in order to suppress the position deviation of described parts in following operation (C1), the first heat-curing resin synthetic layer is carried out to heat treated, and, the operation that this heat treated is carried out in the scope that suppresses the generation of substrate warp;
(C1) after the second interarea of circuit substrate is peeled off interim fabricated material, to the second adhesive film of the second heat-curing resin synthetic layer that comprises the second supporting mass and engage with this second supporting mass so that this second heat-curing resin synthetic layer carries out vacuum laminated operation with the mode that the second interarea of circuit substrate engages;
(D1) the first and second heat-curing resin synthetic layers carried out to hot curing and form the operation of insulating barrier.
Below, Yi Bian with reference to Fig. 4 A to Fig. 4 G, Yi Bian each operation of the method for the first execution mode of the present invention is described.
-operation (A1)-
In operation (A1), so that the mode that the first heat-curing resin synthetic layer 102 engages with the first interarea of circuit substrate is by the vacuum laminated circuit substrate 11'(Fig. 4 A of parts that is equipped with temporarily of the first adhesive film 100).
Be equipped with the circuit substrate 11' of parts and the structure of the first adhesive film 100 as previously mentioned temporarily.
To the vacuum laminated of the first adhesive film 100 of the interim assembly type circuit substrate of parts 11', for example can carry out in the following manner,, under reduced pressure, from the first supporting mass 101 sides, the first adhesive film 100 heating are crimped on to the interim assembly type circuit substrate of parts 11'.(not shown as the member that the first adhesive film 100 heating is crimped on to the interim assembly type circuit substrate of parts 11'; Below, also referred to as " adding thermo-compressed member ".), such as enumerating the metallic plate (SUS runner plate etc.) of heating or metallic roll (SUS roller) etc.In addition, not to add thermo-compressed member directly by being pressed in the first adhesive film 100, but preferably via heat resistant rubber elastomeric material, press, the first adhesive film 100 is followed fully result from that the wiring 13 of the interim assembly type circuit substrate of parts 11' or chamber 12a's is concavo-convex.
Preferably adding thermo-compressed temperature is 80 ℃~160 ℃, be more preferably the scope of 100 ℃~140 ℃, preferably adding thermo-compressed pressure is 0.098MPa~1.77MPa, be more preferably the scope of 0.29MPa~1.47MPa, preferably adding the thermo-compressed time is 20 seconds~400 seconds, is more preferably 30 seconds~scope of 300 seconds.Preferably under vacuum laminated reduced pressure below pressure 26.7hPa, implement.In addition, what is called adds thermo-compressed temperature, and what say is the surface temperature that adds thermo-compressed member, and in the situation that pressing via heat resistant rubber elastomeric material, what say is the surperficial temperature of this elastomeric material of engaging with the first adhesive film 100.
The vacuum laminated vacuum laminator that can utilize market to sell is carried out.The vacuum laminator of selling as market, for example, can enumerate (strain) name mechanism and do made vacuum pressure type laminating machine, Nichigo-Morton(strain) vacuum plant (vaccum applicator) of system etc.
In such operation (A1), the first heat-curing resin synthetic layer 102 is filled in the 12a of chamber, and the parts 15 that are temporarily assemblied in the 12a of chamber are embedded in the first heat-curing resin synthetic layer 102 (Fig. 4 B).
In operation (A1) afterwards, preferably carry out smoothing operation (below, also referred to as " operation (A1') ".), that is, under normal pressure (under atmospheric pressure), for example, by pressing and add thermo-compressed member from the first supporting mass 101 sides, thereby the first stacked adhesive film is carried out to smoothing techniques.About the press condition of operation (A1'), can be made as and the above-mentioned vacuum laminated condition that thermo-compressed condition is identical that adds.
The laminating machine that operation (A1') can utilize market to sell carries out.In addition, the vacuum laminator that operation (A1) and operation (A1') also can be used above-mentioned market to sell is carried out continuously.
-operation (B1)-
In operation (B1), in order to suppress the position deviation of described parts in following operation (C1), the first heat-curing resin synthetic layer is carried out to heat treated, and this heat treated is carried out in the scope that suppresses the generation of substrate warp.
In the prior art, after the interarea of folk prescription that heat-curing resin synthetic layer is arranged on to the interim assembly type circuit substrate of parts, make this heat-curing resin synthetic layer hot curing and form firming body (insulating barrier) at the interarea of the folk prescription of the interim assembly type circuit substrate of parts.In this art, because to imbedding that the heat-curing resin synthetic layer of parts carries out hot curing and the firming body (insulating barrier) that obtains seal member, so, can not result from the change in location (departing from) of parts of later operation, there is the configuration precision of the parts in outstanding chamber.Yet, as previously mentioned, the present inventor finds, in this art, in the situation that use circuit substrate that chamber density is high or the circuit substrate of thin thickness etc. in order to reach the miniaturization, slimming of parts internally-arranged type circuit board, the stage that exists interarea at the folk prescription of circuit substrate to form insulating barrier produces the situation of substrate warp.When producing substrate warp, can transmit and cause obstacle substrate, cause manufacturing the reduction of efficiency (rate of finished products), therefore, require can suppress to produce the technology of such substrate warp.
In detail, substrate warp can be cooled to from heat curing temperature the process of room temperature and show out after forming insulating barrier.Therefore,, in order to suppress the generation of substrate warp, also can consider from heat curing temperature, do not carrying out implementing cooling in the situation that next operation.Yet, from hot curing operation till the stacked operation of the second adhesive film during, maintaining heat curing temperature is unpractical, in addition, also can produce the problem that peeling off of interim fabricated material becomes difficult.In addition, also can consider by the adhesive film that possesses the heat-curing resin synthetic layer that melting viscosity is high is layered on the interim assembly type circuit substrate of parts, even if thereby also can prevent the change in location (departing from) of the parts in chamber without hot curing operation, but, when use possesses the adhesive film of the heat-curing resin synthetic layer that minimum melting viscosity is high, can not get imbedibility, the chamber fillibility of sufficient parts at all, therefore, the stationarity that lacks parts, can not become substantial solution party's scheme.Like this, in the situation that use circuit substrate that chamber density is high or the circuit substrate of thin thickness etc. in order to reach the miniaturization, slimming of parts internally-arranged type circuit board, the generation that suppresses substrate warp under the state of configuration precision that keeps good parts is difficult.
The present inventor finds, by after the interarea of folk prescription that heat-curing resin synthetic is stacked in layer by layer to the interim assembly type circuit substrate of parts, under given conditions (this heat-curing resin synthetic layer is carried out to heat treated, by adopting above-mentioned operation (B1)), thus even if after being cooled to room temperature, also can suppress the generation of substrate warp.In addition, according to such method, can use the adhesive film that possesses the heat-curing resin synthetic layer with moderate minimum melting viscosity, therefore, when stacked adhesive film, can reach imbedibility, the chamber fillibility of sufficient parts.Like this, even if the present invention is in the situation that use circuit substrate that chamber density is high or the circuit substrate of thin thickness etc. in order to reach the miniaturization, slimming of parts internally-arranged type circuit board, also can under the state of configuration precision that keeps good parts, suppress the generation of substrate warp.Therefore, the present invention can manufacture small-sized and slim parts internally-arranged type circuit board with good rate of finished products, and the miniaturization of parts internally-arranged type circuit board, slimming are made to remarkable contribution.
In the method for the first execution mode, the warpage of the substrate obtaining in operation (B1) can be measured, evaluate according to following order.First, from the substrate obtaining operation (B1), obtaining planar dimension is L(mm) * W(mm) (at this, L >=W, L is below 550mm.) test film.Planar dimension is L(mm) * W(mm) test film can be by being L(mm by the substrate cut obtaining in operation (B1)) * W(mm) and size obtain.In addition, in use, meet above-mentioned L(mm) * W(mm) the interim assembly type circuit substrate of parts of planar dimension condition time, also can be by the substrate obtaining in operation (B1) directly as test film.Then, measure the warpage of this test film.The warpage of so-called test film, what say is in operation (B1) afterwards, the warpage of the test film while being cooled to the normal temperature (room temperature) of 15 ℃~40 ℃.The warpage of test film means the arithmetic mean of vertical height at the both ends of the opposite side apart from horizontal plane (being of a size of the limit of W) when one side of this test film (being of a size of the limit of W) being fixed on horizontal plane with stationary fixture.Specifically, the order that the warpage of test film (substrate) can be recorded according to the measurement of the < substrate warp of recording at embodiment, evaluation 1> is measured.In this manual, also such method of measurement is called to " method of measurement 1 ".
In the situation that measuring by method of measurement 1, in a preferred execution mode, the warpage of the substrate obtaining in operation (B1) is 0.1L(mm) below.The warpage of the substrate preferably obtaining in operation (B1) is 0.09L(mm) below, be more preferably 0.08L(mm) below, be more preferably 0.07L(mm) below, be more preferably 0.06L(mm) below, be particularly preferably 0.05L(mm) following, 0.04L(mm) following, 0.03L(mm) following or 0.02L(mm) below.
The size L of the test film preferably using in method of measurement 1 is below 300mm.More than the lower limit of the size L of test film can be made as 50mm conventionally, more than 100mm or more than 200mm.The size W of test film can be made as L >=W >=0.5L, L >=W >=0.7L or L >=W >=0.9L conventionally.
The warpage of the substrate obtaining in operation (B1) also can be measured, be evaluated by method of measurement 2 described later.About the metewand in situation about measuring by method of measurement 2 by aftermentioned.
In operation (B1), from suppressing the viewpoint of the generation of substrate warp, consider, preferably as follows the first heat-curing resin synthetic layer is carried out to heat treated,, preferably making its minimum melting viscosity is below 200000 pools, is more preferably below 180000 pools, is more preferably below 160000 pools, be more preferably below 140000 pools, be particularly preferably that 120000 pools are following, 100000 pools are following, 90000 pools are following, 80000 pools are following or below 70000 pools.In addition, from suppressing the viewpoint of the change in location (departing from) of parts, consider, preferably as follows the first heat-curing resin synthetic layer is carried out to heat treated,, it is more than 15000 pools preferably making its minimum melting viscosity, more than being more preferably 16000 pools, more than being more preferably 18000 pools, more than being more preferably 20000 pools, be particularly preferably that 22000 pools are above, 25000 pools are above, 30000 pools are above or more than 35000 pools.
In operation (B1), the minimum melting viscosity of the first heat-curing resin synthetic layer after heat treated can similarly be measured with above-mentioned.In addition, during the minimum melting viscosity of the first heat-curing resin synthetic layer in measuring operation (B1), measure beginning temperature and can be made as 100 ℃.
Condition about the heat treated of the first heat-curing resin synthetic layer in operation (B1), so long as carry out heat treated in order to suppress the position deviation of described parts in following operation (C1), and this heat treated carries out in the scope that can suppress the generation of substrate warp, be just not particularly limited.In a preferred execution mode, about the heating-up temperature in operation (B1), from reaching the viewpoint of the minimum melting viscosity of above-mentioned particular range, consider, preferably below 155 ℃, be more preferably below 150 ℃, be more preferably below 145 ℃, be more preferably below 140 ℃.Preferably the lower limit of heating-up temperature is more than 110 ℃, is more preferably more than 115 ℃, is more preferably more than 120 ℃, is more preferably more than 125 ℃.
Although depend on heating-up temperature the heating time in operation (B1),, preferably more than 10 minutes, be more preferably more than 15 minutes, be more preferably more than 20 minutes.Although the upper limit of heating time is not particularly limited,, conventionally can be made as below 60 minutes.
Preferably under atmospheric pressure (under normal pressure) carries out the heat treated of the first heat-curing resin synthetic layer in operation (B1).
Heat treated about the first heat-curing resin synthetic layer in operation (B1), can under the first supporting mass 101 is arranged at the state of the first heat-curing resin synthetic layer 102, implement, also can make peeling off the first supporting mass 101 the first heat-curing resin synthetic layer 102 implement after exposing.In a preferred execution mode, the heat treated of the first heat-curing resin synthetic layer in operation (B1) is arranged at the first supporting mass 101 under the state of the first heat-curing resin synthetic layer 102 and implements.Thus, prevent foreign matter adhere to, prevent the first heat reactive resin synthetic layer damage aspect be favourable.
In the situation that be provided with the heat treated of implementing the first heat-curing resin synthetic layer in operation (B1) under the state of the first supporting mass, as long as peeled off this first supporting mass before the operation that conductor layer (wiring) is arranged to the insulating barrier that the first heat-curing resin synthetic layer is solidified and obtain, for example, can between operation (B1) and operation described later (C1), peel off, also can between operation described later (C1) and operation (D1), peel off, can also peel off afterwards at operation described later (D1).In a preferred execution mode, in operation described later (D1), peel off afterwards the first supporting mass.In addition, because in the situation that using the metal formings such as Copper Foil as the first supporting mass, can conductor layer (wiring) be set the such metal forming of use as described later, so, also can not peel off the first supporting mass.
In a preferred execution mode, also can between operation (A1) and operation (B1), implement circuit substrate to be cooled to the processing of normal temperature (room temperature).
In a preferred execution mode, in operation (B1), the first heat-curing resin synthetic layer 102 becomes first heat-curing resin synthetic layer (heat treated body) 102'(Fig. 4 C of the scope of minimum melting viscosity in 15000 pool~200000 pools).In addition, Fig. 4 C shows the scheme of carrying out heat treated and obtaining the first heat-curing resin synthetic layer (heat treated body) 102' under the state that is provided with the first supporting mass 101.
-operation (C1)-
In operation (B1) afterwards, from the second interarea of circuit substrate, peel off interim fabricated material 14, the second interarea of circuit substrate is exposed.Then, so that the vacuum laminated second adhesive film 200(Fig. 4 D of the mode that the second heat-curing resin synthetic layer 202 engages with the second interarea of circuit substrate).
About peeling off of interim fabricated material 14, can, according to the kind of interim fabricated material 14, according to former well-known method, carry out.For example, in the situation that UV is with conduct fabricated material 14 temporarily for the wafer cutting of the UC series of use Furukawa electrical industry (strain) system etc., can, after interim fabricated material 14 is carried out to UV irradiation, peel off interim fabricated material 14.About the condition of UV exposure etc., can be made as the well-known condition conventionally adopting when manufacture component internally-arranged type circuit board.
The structure of the second adhesive film 200 as previously mentioned.In addition, the second supporting mass 201 of the second adhesive film 200 using in operation (C1) can be identical with the first supporting mass 101 of the first adhesive film 100 using in operation (A1), also can be different.In addition, the resin composition for the second heat-curing resin synthetic layer 202 using in operation (C1) can be identical with the resin composition for the first heat-curing resin synthetic layer using in operation (A1), also can be different.
According to the manufacture method of the present invention that adopts operation (B1), even in the situation that in order to reach the miniaturization, slimming of parts internally-arranged type circuit board and use circuit substrate that chamber density is high or circuit substrate of thin thickness etc., also can suppress the generation of substrate warp, therefore, can be in the situation that not to causing obstacle successfully to implement operation (C1) from operation (B1) till the substrate of operation (C1) transmits.And then, because under given conditions the first heat-curing resin synthetic layer is carried out to heat treated, so, the change in location vacuum laminated, parts (departing from) of operation (C1) can also be suppressed to be accompanied by, the outstanding parts internally-arranged type circuit board of configuration precision of parts can be realized with good rate of finished products.
In a preferred execution mode, in operation (C1), the position deviation less than 40 μ m of parts.At this, the position deviation of so-called parts, what say is in operation (B1), the first heat-curing resin synthetic layer is carried out the center of heat treated parts afterwards and the second heat-curing resin synthetic layer carried out the change in location at the center of vacuum laminated parts afterwards in operation (C1).Specifically, the method for measurement that the position deviation of parts can be recorded by embodiment is measured.
Vacuum laminated about the second adhesive film 200 in operation (C1), can adopt with operation (A1) in vacuum laminated same method, the condition of the first adhesive film.
In a preferred execution mode, also can between operation (B1) and operation (C1), implement circuit substrate to be cooled to the processing of normal temperature (room temperature).
In operation (C1), the second heat-curing resin synthetic layer 202 and the second supporting mass 201 are layered in second interarea (Fig. 4 E) of circuit substrate.
As long as peeled off the second supporting mass 201 before the operation that conductor layer (wiring) is arranged to the insulating barrier that the second heat-curing resin synthetic layer is solidified and obtain, for example, can between operation (C1) and operation described later (D1), peel off, also can peel off afterwards at operation described later (D1).In a preferred execution mode, in operation described later (D1), peel off afterwards the second supporting mass.In addition, because in the situation that using the metal formings such as Copper Foil as the second supporting mass, can conductor layer (wiring) be set by such metal forming as described later, so, also can not peel off the second supporting mass.
-operation (D1)-
In operation (D1), the first and second heat-curing resin synthetic layers are carried out to hot curing.Thus, the first heat-curing resin synthetic layer (heat treated body) 102' forms insulating barrier 102 ", the second heat-curing resin synthetic layer 202 forms insulating barrier 202 " (Fig. 4 F).
The condition of hot curing is not particularly limited, and can use the condition conventionally adopting when forming the insulating barrier of parts internally-arranged type circuit board.
For example, although the hot curing condition of the first and second heat-curing resin synthetic layers is according to the composition of the resin composition that uses in each heat-curing resin synthetic layer etc. and different, but, can make curing temperature is the scope (scope of preferably 150 ℃~210 ℃ of 120 ℃~240 ℃, be more preferably the scope of 170 ℃~190 ℃), making curing time is the scope (preferably 10 minutes~75 minutes, be more preferably 15 minutes~60 minutes) of 5 minutes~90 minutes.
Before carrying out hot curing, also can at the temperature lower than curing temperature, to the first and second heat-curing resin synthetic layers, preheat.For example, can be before carrying out hot curing, more than 50 ℃ and 120 ℃ of less thaies (preferably more than 60 ℃, below 110 ℃, be more preferably 70 ℃ above, 100 ℃ following) temperature under, the first and second heat-curing resin synthetic layers are preheated to 5 minutes above (preferably 5 minutes~150 minutes, be more preferably 15 minutes~120 minutes).Carrying out in pre-warmed situation, such preheating is also contained in operation (D1).
Preferably under atmospheric pressure (under normal pressure) carries out the hot curing of the first and second heat-curing resin synthetic layers in operation (D1).
Preferably under the state that substrate is maintained to approximate horizontal, implement operation (D1).For example, preferably the axle on the thickness direction of substrate with respect to the horizontal plane becomes under the state of scope of 80 °~100 ° and implements operation (D1).
In a preferred execution mode, also can between operation (C1) and operation (D1), implement circuit substrate to be cooled to the processing of normal temperature (room temperature).
In addition, in the following description, sometimes the insulating barrier 102 that makes the first heat-curing resin synthetic layer (heat treated body) 102' hot curing and obtain " is called to " the first insulating barrier ".In addition, sometimes the insulating barrier 202 that makes the second heat-curing resin synthetic layer 202 hot curing and obtain " is called to " the second insulating barrier ".
-other operation-
The method of the first execution mode of the present invention can also comprise the operation of (E1) perforate; And the operation that (F1) forms conductor layer on insulating barrier.These operations (E1) and (F1) can implement according to the whole bag of tricks that use in the manufacture of printed wiring board, well known to the skilled person.In addition, in the situation that operation (D1) is peeled off the first and second supporting masses afterwards, peeling off of this first and second supporting mass can implemented between operation (D1) and operation (E1) or between operation (E1) and operation (F1).
Operation (E1) is the operation of perforate.Thus, can form the holes such as guide hole and through hole.In a preferred execution mode, operation (E1) is included in the first and second insulating barriers and forms guide hole.For example, can use drill bit, laser, plasma etc. at the first and second insulating barriers, to form the holes such as guide hole.
From protecting the viewpoint of surface of insulating layer to consider, preferably before peeling off the first and second supporting masses, implement operation (E1) when forming hole.Under these circumstances, for example, can be from supporting mass irradiating laser light and form through hole.In addition,, for the object that laser processing is improved, can use the supporting mass of the laser absorption material that contains applicable used sharp light wavelength.The opening footpath in the hole such as guide hole and through hole, opening shape can determine aptly according to the design of wiring.
In the situation that forming through hole by laser, as LASER Light Source, for example, can enumerate carbon dioxide laser, YAG laser, excimers (excimer) laser etc.Wherein, from the viewpoint of process velocity, cost, consider, especially preferably carbon dioxide laser.
Operation (F1) is the operation that forms conductor layer on insulating barrier.
The conductor material using in conductor layer is not particularly limited.In a preferred embodiment, conductor layer comprises the more than a kind metal of the group selection from consisting of gold, platinum, palladium, silver, copper, aluminium, cobalt, chromium, zinc, nickel, titanium, tungsten, iron, tin and indium.Conductor layer can be elemental metals layer, can be also alloy-layer, as alloy-layer, for example, can enumerate for example, layer by alloy (, nickel-chromium alloy, copper-nickel alloy and the copper-titanium alloy) formation of the two or more metal of the group selection from above-mentioned.Wherein, the viewpoints such as the easiness of the versatility forming from conductor layer, cost, composition are considered, especially the elemental metals layer of preferred chromium, nickel, titanium, aluminium, zinc, gold, palladium, silver or copper, or the alloy-layer of nickel-chromium alloy, copper-nickel alloy, copper-titanium alloy, more preferably the elemental metals layer of chromium, nickel, titanium, aluminium, zinc, gold, palladium, silver or copper, or the alloy-layer of nickel-chromium alloy, more preferably the elemental metals layer of copper.
Conductor layer can be single layer structure, can be to be also laminated with the two-layer above elemental metals layer consisting of different types of metal or alloy or the multilayer structure of alloy-layer.In the situation that conductor layer is multilayer structure, the layer preferably joining with insulating barrier is the elemental metals layer of chromium, zinc or titanium, or the alloy-layer of nickel-chromium alloy.
Although the thickness of conductor layer depends on the design of required parts internally-arranged type circuit board,, be generally 3 μ m~35 μ m, preferably 5 μ m~30 μ m.
In one embodiment, operation (F1) comprising:
Insulating barrier is carried out to roughening treatment; And
By being plated on the insulating barrier of alligatoring, form conductor layer.
Order, the condition of roughening treatment are not particularly limited, and can adopt normally used well-known order, condition when manufacturing printed wiring board.For example, the roughening treatment that can implement in order to utilize the swelling that swelling liquid carries out to process, utilize oxidant to carry out, utilize the neutralisation treatment that neutralizer carries out and the first and second insulating barriers are carried out to roughening treatment.As swelling liquid, be not particularly limited, can enumerate aqueous slkali, interfacial activity agent solution etc., preferably aqueous slkali.As this aqueous slkali, preferably sodium hydroxide solution, aqua calcis.As the swelling liquid of selling on the market, for example, can enumerate ATOTECH JAPAN(strain) Swelling Dip Securiganth P, the Swelling Dip Securiganth SBU etc. of system.Utilize swelling that swelling liquid carries out to process and be not particularly limited, for example, can within 1 minute~20 minutes, carry out by the first and second insulating barriers being immersed in the swelling liquid of 30~90 ℃.From the swelling of the resin of the first and second insulating barriers being suppressed to the viewpoint of moderate grade, consider, preferably make the first and second insulating barriers be immersed in the swelling liquid of 40~80 ℃ 5 seconds~15 minutes.As oxidant, be not particularly limited, for example, can enumerate the alkalescence of having dissolved calcium permanganate or sodium permanganate in the aqueous solution of NaOH and cross mangaic acid solution.About utilizing alkalescence to cross the roughening treatment that the oxidants such as mangaic acid solution carry out, preferably make the first and second insulating barriers be immersed in the oxidizing agent solution that is heated to 60 ℃~80 ℃, within 10 minutes~30 minutes, carry out.In addition, preferably the alkaline concentration of crossing the permanganate in mangaic acid solution is 5 quality %~10 quality %.As the oxidant of selling on the market, for example, can enumerate ATOTECH JAPAN(strain) alkalescence such as Concentrate Compact CP, Dosing Solution Securiganth P of system cross mangaic acid solution.In addition,, as neutralizer, preferably the acid aqueous solution, as market merchandising, for example, can enumerate ATOTECH JAPAN(strain) the Reduction Solution Securiganth P of system.Utilize processing that neutralizer carries out can be immersed in by the treated side that makes to utilize oxidizing agent solution to carry out roughening treatment in the neutralizer of 30~80 ℃ carries out for 5 minutes~30 minutes.From the viewpoint of workability etc., preferably the object that utilizes oxidizing agent solution to carry out roughening treatment is immersed in the neutralizer of 40~70 ℃ to the method for 5 minutes~20 minutes.
About the formation method of conductor layer, as long as can form the conductor layer (wiring) with required pattern, be just not particularly limited.For example, can by half addition (semiadditive) method, full addition (full additive) method etc. in the past well-known technology plating carried out in the surface of the first and second insulating barriers form the conductor layer (wiring) with required pattern.Below, the example that forms conductor layer by semi-additive process is shown.
First, by electroless plating, overlay on the surface formation plating Seed Layer of the first and second insulating barriers.Next, in the plating Seed Layer forming, form the mask pattern that makes accordingly a part for plating Seed Layer expose with required wiring pattern.After forming metal level by electrolytic coating in the plating Seed Layer of exposing, remove mask pattern.After this, can remove unwanted plating Seed Layer by etching etc., form the conductor layer with required pattern.
In the situation that using the metal formings such as Copper Foil as the first and second supporting masses, also can be by utilizing the formation conductor layers such as refining (subtractive) method of this metal forming.In addition, also can, using metal forming as plating Seed Layer, by electrolytic coating, form conductor layer.
By these operations, in the holes such as guide hole, be also formed with conductor (wiring), be arranged on the surperficial wiring 13 of the first and second insulating barriers 102 " and 202 ", wiring and the parts of circuit substrate are electrically connected to, and obtain parts internally-arranged type circuit board 1000(Fig. 4 G).In addition, as long as can realize electrical connection, the inside in the holes such as guide hole just need not be filled with conductor, also can form to apply the mode of the wall in hole the thin layer of conductor.
In addition, the method for the first execution mode of the present invention can also comprise that (G1) carries out the operation of a sheet to parts internally-arranged type circuit board.
In operation (G1), for example, can will grind and cut the structure sheet obtaining and turn to parts internally-arranged type circuit board unit one by one by possess the former well-known cutter sweep of rotation blade.
Above, although in conjunction with preferred embodiment the method for the first execution mode of the present invention being illustrated, but, as long as comprise each operation of above-mentioned operation (A1) to (D1), and each operation of operation (A1) to (D1) sequentially implements according to this, the method for the first execution mode of the present invention is just not limited to the above-mentioned scheme specifically illustrating.For example, operation (G1) can be between operation (C1) and operation (D1), between operation (D1) and operation (E1) or carry out between operation (E1) and operation (F1).In addition, also can repeat operation (A1) to (F1), seek further laminates linearize.In the method for the first execution mode of the present invention, can consider many variation.
The method > of < the second execution mode
In the method for the second execution mode of the present invention, use insulated substrate as internal substrate.
As previously mentioned, when manufacture component internally-arranged type circuit board, generally use circuit substrate as internal substrate.In the execution mode that uses circuit substrate as internal substrate, in general, by the inside at circuit substrate by component configuration, next stack gradually insulating barrier, conductor layer, thereby can obtain possessing the parts internally-arranged type circuit board of multilayer wiring.About this point, sometimes according to electronic equipment, adopt the circuit board (2 layers of circuit board) that is formed with circuit on the two sides of insulated substrate.The present inventor expects, under these circumstances, the inside by component configuration at insulated substrate, next, forms insulating barrier and conductor layer, 2 layers of circuit board that obtain thus higher function and can carry out miniaturization.
Therefore, the method for the second execution mode of the present invention comprises following operation (A2), (B2), (C2) and (D2) in order:
(A2) be equipped with on the insulated substrate of parts temporarily, to the first adhesive film of the first heat-curing resin synthetic layer that comprises the first supporting mass and engage with this first supporting mass so that this first heat-curing resin synthetic layer carries out vacuum laminated operation with the mode that the first interarea of insulated substrate engages, the described insulated substrate that is temporarily equipped with parts comprises: have the first and second interareas, be formed with the insulated substrate that connects the chamber between this first and second interarea; The interim fabricated material engaging with the second interarea of this insulated substrate; And the parts of inside that are temporarily assemblied in the chamber of described insulated substrate by described interim fabricated material;
(B2) in order to suppress the position deviation of described parts in following operation (C2), the first heat-curing resin synthetic layer is carried out to heat treated, and, the operation that this heat treated is carried out in the scope that suppresses the generation of substrate warp;
(C2) after the second interarea of insulated substrate is peeled off interim fabricated material, to the second adhesive film of the second heat-curing resin synthetic layer that comprises the second supporting mass and engage with this second supporting mass so that this second heat-curing resin synthetic layer carries out vacuum laminated operation with the mode that the second interarea of insulated substrate engages;
(D2) the first and second heat-curing resin synthetic layers carried out to hot curing and form the operation of insulating barrier.
About the operation (A2) in the second execution mode of the present invention, (B2), (C2) and (D2), except using the internal substrate this point of insulated substrate as build-in components, substantially with operation (A1) in the first execution mode of the present invention, (B1), (C1) and (D1) corresponding respectively.Operation (A2) to the operation in the method for the first execution mode of the present invention (A1), (B1), (C1) and the of the present invention favourable effect that (D1) describes in the method for the second execution mode of the present invention, (B2), (C2) and (D2) in can reach too.In addition, to the operation in the method for the second execution mode of the present invention (A2), (B2), (C2) and the of the present invention favourable effect that (D2) describes the operation (A1) in the method for the first execution mode of the present invention, (B1), (C1) and (D1) in can reach too.
Below, Yi Bian with reference to Fig. 5 A to Fig. 5 G, Yi Bian each operation of the method for the second execution mode of the present invention is described.
-operation (A2)-
In operation (A2), so that the mode that the first heat-curing resin synthetic layer 102 engages with the first interarea of insulated substrate is by the vacuum laminated insulated substrate 21'(Fig. 5 A of parts that is equipped with temporarily of the first adhesive film 100).
Be equipped with the insulated substrate 21' of parts and the structure of the first adhesive film 100 as previously mentioned temporarily.
Under the same order of operation (A1) that can be in the method with the first execution mode of the present invention, condition, implement the vacuum laminated of the 100 couples of interim assembly type insulated substrate of parts 21' of the first adhesive film.
In such operation (A2), the first heat-curing resin synthetic layer 102 is filled in the 21a of chamber, and the parts 25 that are temporarily assemblied in the 21a of chamber are embedded in the first heat-curing resin synthetic layer 102 (Fig. 5 B).
Preferably in operation (A2), carry out afterwards the first stacked adhesive film to carry out the smoothing operation (operation (A2')) of smoothing techniques.The condition of operation (A2') can be established identically with the operation (A1') in the method for the first execution mode of the present invention.
-operation (B2)-
In operation (B2), in order to suppress the position deviation of described parts in following operation (C2), the first heat-curing resin synthetic layer is carried out to heat treated, and this heat treated is carried out in the scope that suppresses the generation of substrate warp.
The condition of the heat treated in operation (B2) (having or not the first supporting mass etc. when pressure when the minimum melting viscosity of the first heat-curing resin synthetic layer, heating-up temperature, heating time, heating, heat treated) can be established identically with the operation (B1) in the method for the first execution mode of the present invention.
Can the warpage of the substrate obtaining in operation (B2) be measured, be evaluated according to following order.First, with stationary fixture, be fixed on one side (top) of the substrate obtaining in operation (B2), with respect to ground (horizontal plane), vertically sling.Then, measure the warpage of substrate.At this, the warpage of so-called substrate, means apart from the arithmetic mean of the vertical height at the both ends of the opposite side (below) of the substrate of imaginary vertical plane.The order that the measurement of the < substrate warp that specifically, the warpage of substrate can be recorded according to embodiment, evaluation 2> record is measured.In this manual, also such method of measurement is called to " method of measurement 2 ".
In the situation that measuring by method of measurement 2, in a preferred execution mode, the warpage of the substrate preferably obtaining in operation (B2) is below 25mm, be more preferably below 20mm, being more preferably below 15mm, being more preferably below 10mm, is particularly preferably below 5mm.
Also can measure, evaluate by the warpage of 1 pair of substrate obtaining in operation (B2) of aforesaid method of measurement.About the metewand in situation about measuring by method of measurement 1, as previously mentioned.
In the situation that be provided with the heat treated of implementing the first heat-curing resin synthetic layer in operation (B2) under the state of the first supporting mass, as long as peeled off this first supporting mass before the operation that conductor layer (wiring) is arranged to the insulating barrier that the first heat-curing resin synthetic layer is solidified and obtain, for example, can between operation (B2) and operation described later (C2), peel off, also can between operation described later (C2) and operation (D2), peel off, can also peel off afterwards at operation described later (D2).In a preferred execution mode, in operation described later (D2), peel off afterwards the first supporting mass.In addition, because in the situation that using the metal formings such as Copper Foil as the first supporting mass, can conductor layer (wiring) be set by such metal forming as described later, so, also can not peel off the first supporting mass.
In a preferred execution mode, also can between operation (A2) and operation (B2), implement substrate to be cooled to the processing of normal temperature (room temperature).
In a preferred execution mode, in operation (B2), the first heat-curing resin synthetic layer 102 becomes first heat-curing resin synthetic layer (heat treated body) 102'(Fig. 5 C of the scope of minimum melting viscosity in 15000 pool~200000 pools).In addition, Fig. 5 C is illustrated in the scheme of carrying out heat treated under the state that is provided with the first supporting mass 101 and obtaining the first heat-curing resin synthetic layer (heat treated body) 102'.
-operation (C2)-
In operation (B2) afterwards, from the second interarea of insulated substrate, peel off interim fabricated material 24, the second interarea of insulated substrate is exposed.Then, so that the vacuum laminated second adhesive film 200(Fig. 5 D of the mode that the second heat-curing resin synthetic layer 202 engages with the second interarea of insulated substrate).
About peeling off of interim fabricated material 24, can with the method for the first execution mode of the present invention in operation (C1) similarly, according to the kind of interim fabricated material, according to former well-known method, condition, carry out.
The structure of the second adhesive film 200 as previously mentioned.In addition, the second supporting mass 201 of the second adhesive film 200 using in operation (C2) can be identical with the first supporting mass 101 of the first adhesive film 100 using in operation (A2), also can be different.In addition, the resin composition for the second heat-curing resin synthetic layer 202 using in operation (C2) can be identical with the resin composition for the first heat-curing resin synthetic layer using in operation (A2), also can be different.
According to the manufacture method of the present invention that adopts operation (B2), even in the situation that in order to reach the miniaturization, slimming of parts internally-arranged type circuit board (parts internally-arranged type substrate) and use insulated substrate that chamber density is high or insulated substrate of thin thickness etc., also can suppress the generation of substrate warp, therefore, can be in the situation that not to causing obstacle successfully to implement operation (C2) from operation (B2) till the substrate of operation (C2) transmits.And then, because the first heat-curing resin synthetic layer is carried out to heat treated under defined terms, so, the change in location (departing from) of the vacuum laminated parts of operation (C2) can also be suppressed to be accompanied by, the outstanding parts internally-arranged type substrate of configuration precision of parts can be realized with good rate of finished products.
In a preferred execution mode, the position deviation less than 40 μ m of parts in operation (C2).About definition and the method for measurement of the position deviation of parts, the definition and the method for measurement that describe with operation (C1) in the method for the first execution mode of the present invention are identical.
Vacuum laminated about the second adhesive film 200 in operation (C2), can adopt vacuum laminated identical method, condition with the first adhesive film in operation (A2).
In a preferred execution mode, also can between operation (B2) and operation (C2), implement substrate to be cooled to the processing of normal temperature (room temperature).
In operation (C2), the second heat-curing resin synthetic layer 202 and the second supporting mass 201 are layered in second interarea (Fig. 5 E) of insulated substrate.
As long as peeled off the second supporting mass 201 before the operation that conductor layer (wiring) is arranged to the insulating barrier that the second heat-curing resin synthetic layer is solidified and obtain, for example, can between operation (C2) and operation described later (D2), peel off, also can peel off afterwards at operation described later (D2).In a preferred execution mode, in operation described later (D2), peel off afterwards the second supporting mass.In addition, because in the situation that using the metal formings such as Copper Foil as the second supporting mass, can conductor layer (wiring) be set by such metal forming as described later, so, also can not peel off the second supporting mass.
-operation (D2)-
In operation (D2), the first and second heat-curing resin synthetic layers are carried out hot curing and form insulating barrier.Thus, the first heat-curing resin synthetic layer (heat treated body) 102' forms insulating barrier 102 ", the second heat-curing resin synthetic layer 202 forms insulating barrier 202 " (Fig. 5 F).
The condition of the hot curing in operation (D2) (curing temperature, curing time, the pressure while solidifying, have or not preheat and the configuration condition of condition, the substrate while solidifying etc.) can be established identically with the operation (D1) in the method for the first execution mode of the present invention.
As previously mentioned, preferably in operation (D2), peel off afterwards the first and second supporting masses.Therefore,, in operation (D2), preferably under the state that is provided with the first and second supporting masses, the first and second heat-curing resin synthetic layers are carried out to hot curing.Thus, can obtain having the surperficial insulating barrier of low roughness.
In a preferred execution mode, also can between operation (C2) and operation (D2), implement substrate to be cooled to the processing of normal temperature (room temperature).
In addition, in the following description, sometimes the insulating barrier 102 that makes the first heat-curing resin synthetic layer (heat treated body) 102' hot curing and obtain " is called to " the first insulating barrier ".In addition, sometimes the insulating barrier 202 that makes the second heat-curing resin synthetic layer 202 hot curing and obtain " is called to " the second insulating barrier ".In addition, sometimes the substrate obtaining in the operation in the method at the second execution mode of the present invention (D2) is called to " parts internally-arranged type insulated substrate ".
-other operation-
The method of the second execution mode of the present invention can also comprise the operation of (E2) perforate; And the operation that (F2) forms conductor layer on insulating barrier.These operations (E2) and (F2) can implement according to the whole bag of tricks that use in the manufacture of printed wiring board, well known to the skilled person, for example, can be with the operation that the method for the first execution mode is described (E1) and (F1) similarly implement.In a preferred execution mode, operation (E2) comprises formation through hole.
By these operations, in the holes such as through hole, be also formed with conductor (wiring), the surperficial wiring 23 and the parts 25 that are arranged on the first insulating barrier 102 " surperficial wiring 23, be arranged on the second insulating barrier 202 " are electrically connected to, and can obtain parts internally-arranged type circuit board (parts internally-arranged type substrate) 2000(Fig. 5 G).
Method second embodiment of the invention, can form small conductor (wiring) and manufacture 2 layers of circuit board (about the value of surface roughness by aftermentioned) by being plated on the insulating barrier that surface roughness is low.Add parts are built in to insulated substrate, the method of the second execution mode of the present invention can be carried out small cloth linearize while the lift-launch amount that increases parts, compare with 2 layers of circuit board in the past, can realize high function significantly and small-sized 2 layers of circuit board (following, also referred to as " 2 layers of circuit board of parts internally-arranged type ".)。
In addition, the method for the second execution mode of the present invention can also comprise that (G2) carries out the operation of a sheet to parts internally-arranged type substrate.
Operation (G2) can with the method for the first execution mode of the present invention in operation (G1) similarly implement.
Above, although in conjunction with preferred embodiment the method for the second execution mode of the present invention being illustrated of 2 layers of circuit board of manufacture component internally-arranged type, but, as long as comprise that each operation of above-mentioned operation (A2) to (D2) and each operation of operation (A2) to (D2) implement in this order, the method for the second execution mode of the present invention is just not limited to the scheme specifically illustrating above-mentioned.For example, also can implement operation (A2) to (D2) afterwards, repeat to form the operation (that is, above-mentioned operation (F2)) of conductor layer and the operation of formation insulating barrier, manufacture the parts internally-arranged type circuit board with multilayer wiring.Form the operation of the insulating barrier method arbitrarily can be according to former well-known manufacture printed wiring board time and implement, for example, can use with above-mentioned operation (C2) and (D2) identical method implement.In addition, operation (G2) can between operation (C2) and operation (D2), operation (D2) and operation (E2) between or between operation (E2) and operation (F2), carry out.In the method for the second execution mode of the present invention, can consider many variation.
[parts internally-arranged type insulated substrate]
As previously mentioned, when manufacture component internally-arranged type circuit board, generally use circuit substrate as internal substrate.On the other hand, in the method for the second execution mode of the present invention, make parts be built in insulated substrate and manufacture component internally-arranged type circuit board.Below, the parts internally-arranged type insulated substrate obtaining in operation (D2) in the method at the second execution mode of the present invention is described.
Parts internally-arranged type insulated substrate is characterised in that, comprising: have the first and second interareas, be formed with the insulated substrate that connects the chamber between this first and second interarea; The first insulating barrier engaging with the first interarea of insulated substrate; The second insulating barrier engaging with the second interarea of insulated substrate; And being arranged on the parts on the second insulating barrier to be housed in the mode of inside in the chamber of insulated substrate, the first insulating barrier is filled the chamber of insulated substrate to imbed the mode of parts.
About be formed with chamber insulated substrate, be used to form heat-curing resin synthetic and the parts of the first and second insulating barriers, as previously mentioned.
The first insulating barrier and the second insulating barrier can be mutually different compositions, can be also identical compositions.In the situation that the first insulating barrier has identical composition with the second insulating barrier, the first insulating barrier and the second insulating barrier can not illustrate clear and definite interface and be integrated continuously.
About the thickness of parts internally-arranged type insulated substrate, from the viewpoint of the slimming of parts internally-arranged type circuit board, consider, thin is more suitable, preferably, below 400 μ m, be more preferably below 300 μ m, be more preferably below 200 μ m, being more preferably below 150 μ m, is particularly preferably below 100 μ m.Although the lower limit of the thickness of parts internally-arranged type insulated substrate is not particularly limited,, in general, more than can being made as 30 μ m, more than 50 μ m or more than 80 μ m.
In parts internally-arranged type insulated substrate, the spacing between parts is corresponding with the spacing between aforesaid chamber 21a.In detail, the spacing between the parts in preferred components internally-arranged type insulated substrate is below 10mm, is more preferably below 9mm, is more preferably below 8mm, be more preferably below 7mm, and be particularly preferably below 6mm.The lower limit of the spacing between parts normally above, the 2mm of 1mm with first-class.Spacing between parts is identical without spreading all over parts internally-arranged type insulated substrate, also can be different.
By form hole, the conductor layers such as through hole at parts internally-arranged type insulated substrate, thus the parts internally-arranged type circuit boards such as 2 layers of circuit board of energy manufacture component internally-arranged type.
From the viewpoint of small cloth linearize, consider, about parts internally-arranged type insulated substrate, preferably the surperficial arithmetic average roughness Ra after roughening treatment is below 350nm, be more preferably below 300nm, be more preferably below 250nm, being more preferably below 200nm, is particularly preferably below 180nm, below 160nm, below 140nm, below 120nm, below 100nm or below 80nm.The lower limit of arithmetic average roughness Ra is not particularly limited, and is 20nm, 40nm etc.
In addition, arithmetic average roughness Ra can be used non-contact type surface roughness meter to measure.As the object lesson of non-contact type surface roughness meter, can enumerate " the WYKO NT3300 " of Veeco Instruments system.
[2 layers of circuit board of parts internally-arranged type]
In the method for the second execution mode of the present invention, 2 layers of circuit board of manufacture component internally-arranged type aptly.
In one embodiment, 2 layers of circuit board of parts internally-arranged type comprise: the first and second conductor layers; Engage with the first and second conductor layers and be arranged on the parts internally-arranged type insulated substrate between this first and second conductor layer; And the interlayer connector that the first and second conductor layers are electrically connected to.
About conductor layer and parts internally-arranged type insulated substrate as previously mentioned.
About interlayer connector, as long as can be electrically connected to the first and second conductor layers, be just not particularly limited, for example, can enumerate the connector of filling conductor and forming in through hole, at the thin layer of the wall coated conductor of through hole and the connector forming.
In the method for the second execution mode of the present invention, because form conductor layer by being plated on the insulating barrier that surface roughness is low, so, can obtain having 2 layers of circuit board of parts internally-arranged type of small wiring.For example, can with good rate of finished products form have line/interval than (L/S ratio) preferably 50/50 μ m following, be more preferably 2 layers of circuit board of parts internally-arranged type that 40/40 μ m is following, be more preferably the small wiring below 30/30 μ m, and then, can form the 2 layers of circuit board of parts internally-arranged type that there is L/S than being the small wiring below 20/20 μ m, below 10/10 μ m, below 7/7 μ m with good rate of finished products.
[semiconductor device]
Can manufacture semiconductor device with the parts internally-arranged type circuit board of manufacturing by method of the present invention.
As such semiconductor device, can enumerate and be supplied to electric product (for example, computer, portable phone, digital camera and television set etc.) and the various semiconductor devices of the vehicles (for example, automotive bicycle, automobile, electric car, boats and ships and aircraft etc.) etc.
[embodiment]
Below, although by embodiment, specifically describe the present invention,, the present invention is not limited to these embodiment.In addition, in following record, unless otherwise specified, " part " and " % " just means respectively " mass parts " and " quality % ".
First, various method of measurement, evaluation method are described.
[modulation 1 of measurement, sample for evaluation]
(1-1) be equipped with the preparation of the circuit substrate of parts temporarily
On the internal layer circuit substrate of 255mm * 255mm size, with 5mm spacing, made the chamber of the 0.8mm * 1.2mm size between the first and second interareas that connect this internal layer circuit substrate.As internal layer circuit substrate, used and be formed with the glass cloth base material epoxy resin two sides copper-clad lamination of internal layer circuit (thickness of the Copper Foil of one side is 18 μ m, the thickness of substrate is 150 μ m, and integral thickness is 186 μ m, SUNX (strain) system " R5715ES ").Next, use MEC(strain) system " CZ8100 " to be formed with chamber internal layer circuit substrate two facet etch 1 μ m and carry out the roughening treatment on copper surface.After this, at the one side (the second interarea) of the internal layer circuit substrate interim fabricated material (ancient river electrical industry (strain) combinations sheet cutting be with UC with UV) of fitting, by parts ((strain) Murata Manufacturing Co. Ltd. preparative layer laminate film capacitor 1005, be of a size of 1.0mm * 0.5mm, thickness is 180 μ m) be assemblied in the adhesive surface of the interim fabricated material exposing via the chamber of internal layer circuit substrate temporarily.
(1-2) the first adhesive film is vacuum laminated
Use batch processing (batch) formula vacuum pressed laminating machine ((strain) name mechanism is made made " MVLP-500 "), so that the mode that the first interarea of the first heat-curing resin synthetic layer and internal layer circuit substrate joins, by the vacuum laminated internal layer circuit substrate that is equipped with parts obtaining in above-mentioned (1-1) of the first adhesive film of making in following production example temporarily.Vacuum laminated about the first adhesive film, decompression 30 seconds, make air pressure be below 13hPa after, under 110 ℃, pressure 0.74MPa, carry out the lamination treatment of 30 seconds.And then, under normal pressure, by the thermo-compressed of carrying out 60 seconds, carry out smoothing techniques under 110 ℃, pressure 0.5MPa.
In addition, the first adhesive film is supplied to this operation after peeling off diaphragm.This operation is equivalent to operation (A) (being operation (A1) in detail).
(1-3) heat treated of the first heat-curing resin synthetic layer
Under normal pressure, with the temperature and time heating shown in following table 2-1, be laminated with the internal layer circuit substrate of the first adhesive film, the first heat-curing resin synthetic layer is carried out to heat treated.The substrate obtaining is called to " evaluating substrate a1 ".This operation is equivalent to operation (B) (being operation (B1) in detail).
(1-4) interim fabricated material peels off
After interim fabricated material is carried out to UV irradiation, from evaluating substrate a1, peel off interim fabricated material and the second interarea of internal layer circuit substrate is exposed.The substrate obtaining is called to " evaluating substrate b1 ".
(1-5) the second adhesive film is vacuum laminated
Use batch processing formula vacuum pressed laminating machine ((strain) name mechanism is made made " MVLP-500 "), so that the mode that the second interarea of the second heat-curing resin synthetic layer and internal layer circuit substrate joins is vacuum laminated on evaluation substrate b1 by the second adhesive film of making in following production example.Vacuum laminated about the second adhesive film, decompression 30 seconds, make air pressure be below 13hPa after, under 110 ℃, pressure 0.74MPa, carried out the lamination treatment of 30 seconds.And then, under normal pressure, by the hot pressing of carrying out 60 seconds under 110 ℃, pressure 0.5MPa, fetch and carry out smoothing techniques.The substrate obtaining is called to " evaluating substrate c1 ".
In addition, the second adhesive film is supplied to this operation after peeling off diaphragm.This operation is equivalent to operation (C) (being operation (C1) in detail).
(1-6) hot curing of the first and second heat-curing resin synthetic layers
Under normal pressure, will evaluate substrate c1 and at 100 ℃, heat 30 minutes, next, at 180 ℃, heat 30 minutes, make the first and second heat-curing resin synthetic layer hot curing, on the two sides of internal layer circuit substrate, form insulating barrier.This operation is equivalent to operation (D) (being operation (D1) in detail).
[modulation 2 of measurement, sample for evaluation]
(2-1) be equipped with the preparation of the insulated substrate of parts temporarily
On the insulated substrate of 255mm * 255mm size, with 5mm spacing, made the chamber of the 0.8mm * 1.2mm size between the first and second interareas that connect this insulated substrate.As insulated substrate, by fiberglass substrate epoxy resin two sides copper-clad lamination, (thickness of the Copper Foil of one side is 18 μ m in use, the thickness of substrate (fiberglass substrate-epoxy resin is solidified prepreg) is 150 μ m, integral thickness is 186 μ m, Panasonic(strain) system " R5715ES ") the insulated substrate all removed of two sides Copper Foil.Next, interim fabricated material (Furukawa electrical industry (strain) combinations sheet cuts with UV with UC) is fitted in to the one side (the second interarea) of the insulated substrate that is formed with chamber, by parts ((strain) Murata Manufacturing Co. Ltd. preparative layer laminate film capacitor 1005,1.0mm * 0.5mm size, thickness 180 μ m) be assemblied in the adhesive surface of the interim fabricated material exposing via the chamber of insulated substrate temporarily.
(2-2) the first adhesive film is vacuum laminated
Use batch processing formula vacuum pressed laminating machine ((strain) name mechanism is made made " MVLP-500 "), so that the mode that the first interarea of the first heat-curing resin synthetic layer and insulated substrate joins, by the vacuum laminated insulated substrate that is equipped with parts obtaining in above-mentioned (2-1) of the first adhesive film of making in following production example temporarily.Vacuum laminated about the first adhesive film, decompression 30 seconds, make air pressure be below 13hPa after, under 110 ℃, pressure 0.74MPa, carry out the lamination treatment of 30 seconds.And then, under normal pressure, by the thermo-compressed of carrying out 60 seconds, carry out smoothing techniques under 110 ℃, pressure 0.5MPa.
In addition, the first adhesive film is supplied to this operation after peeling off diaphragm.This operation is equivalent to operation (A) (being operation (A2) in detail).
(2-3) heat treated of the first heat-curing resin synthetic layer
Under normal pressure, with the temperature and time heating shown in following table 2-2, be laminated with the interim assembly type insulated substrate of parts of the first adhesive film, the first heat-curing resin synthetic layer is carried out to heat treated.The substrate obtaining is called to " evaluating substrate a2 ".This operation is equivalent to operation (B) (being operation (B2) in detail).
(2-4) interim fabricated material peels off
After interim fabricated material is carried out to UV irradiation, from evaluating substrate a2, peel off interim fabricated material, the second interarea of insulated substrate is exposed.The substrate obtaining is called to " evaluating substrate b2 ".
(2-5) the second adhesive film is vacuum laminated
Use batch processing formula vacuum pressed laminating machine ((strain) name mechanism is made made " MVLP-500 "), so that the mode that the second interarea of the second heat-curing resin synthetic layer and insulated substrate joins is vacuum laminated on evaluation substrate b2 by the second adhesive film of making in following production example.Vacuum laminated about the second adhesive film, decompression 30 seconds, make air pressure be below 13hPa after, under 110 ℃, pressure 0.74MPa, carry out the lamination treatment of 30 seconds.And then, under normal pressure, by the thermo-compressed of carrying out 60 seconds, carry out smoothing techniques under 110 ℃, pressure 0.5MPa.The substrate obtaining is called to " evaluating substrate c2 ".
In addition, the second adhesive film is supplied to this operation after peeling off diaphragm.This operation is equivalent to operation (C) (being operation (C2) in detail).
(2-6) hot curing of the first and second heat-curing resin synthetic layers
Under normal pressure, will evaluate substrate c2 and at 100 ℃, heat 30 minutes, next, at 180 ℃, heat 30 minutes, make the first and second heat-curing resin synthetic layer hot curing and form insulating barrier.This operation is equivalent to operation (D) (being operation (D2) in detail).
The measurement > of the minimum melting viscosity of < heat-curing resin synthetic layer
Use dynamic viscoelastic measurement mechanism ((strain) UBM society's system " Rheosol-G3000 "), the first heat-curing resin synthetic layer in the first adhesive film of making in following production example is measured to minimum melting viscosity.Use the parallel-plate of diameter 18mm, from starting temperature 60 C until 200 ℃ with 5 ℃/minute of programming rates, heat up, measuring temperature interval, be, under 2.5 ℃, the vibration measuring condition that is 1deg for 1Hz, distortion, sample resins synthetic 1g is measured to dynamic viscoelastic rate, calculate minimum melting viscosity (pool).
In addition, except under the heating condition of table 3 or table 4, the first heat-curing resin synthetic layer in the first adhesive film being carried out heat treated, beginning temperature is made as 100 ℃, with the above-mentioned minimum melting viscosity of evaluating the first heat-curing resin synthetic layer in substrate a1 and a2 of similarly having measured.
The measurement of < substrate warp, evaluation 1>
In-service evaluation substrate a1, implements the evaluation of substrate warp as illustrated in fig. 6.In detail, under room temperature (23 ℃), measure 50 in will evaluation substrate a1(Fig. 6 with stationary fixture 31) the both ends of the opposite side apart from horizontal surface 30 (AB limit) of one side (CD limit) while being fixed on horizontal surface 30, that is, and the vertical height (h of side a and b
aand h
b), obtain its mean value ((h
a+ h
b)/2).Then, based on following benchmark, evaluate substrate warp.In addition, when the mean value in this evaluation is larger than 25mm, in the operation of vacuum laminated the second adhesive film, easily to substrate, transmission produces bad.
Metewand:
Zero: mean value is below 25mm
*: mean value is larger than 25mm.
The measurement of < substrate warp, evaluation 2>
In-service evaluation substrate a2, implements the evaluation of substrate warp as illustrated in fig. 7.In detail, under room temperature (23 ℃), with stationary fixture 31 is fixing, evaluate 60 in substrate a2(Fig. 7) one side (CD limit), with respect to ground (horizontal plane), hang in vertical direction.At this, suppose the face perpendicular to the ground that comprises the CD limit of evaluating substrate a2, using it as imaginary vertical plane (40 in Fig. 7).Then, measure apart from the both ends of the opposite side (AB limit) of imaginary vertical plane 40, that is, and the vertical height (H of side a and b
aand H
b), obtain its mean value ((H
a+ H
b)/2).Then, based on following benchmark evaluation substrate warp.In addition, when the mean value in this evaluation is larger than 25mm, in the operation of vacuum laminated the second adhesive film, easily to substrate, transmission produces bad.
Metewand:
Zero: mean value is below 25mm
*: mean value is larger than 25mm.
The evaluation > of the position deviation of < parts
With light microscope (KEYENCE system " VH-5500 "), measure the variation of the component locations of stacked the second adhesive film front and back.About measuring, measured the variation of evaluating between substrate b1 and evaluation substrate c1 or evaluating the position of these object parts between substrate b2 and evaluation substrate c2.In addition, in this evaluation, using the center of parts as datum mark, measure the change in location (μ m) of this datum mark.Then, based on following metewand, evaluate the position deviation of parts.
Metewand:
Zero: change in location less than 40 μ m
*: change in location is more than 40 μ m.
[production example 1]
(1) modulation of resin varnish
To hexichol phenol-type epoxy resin, (aurification (strain) system " ZX1059 " is lived by Nippon Steel, the 1:1 melange of bisphenol A-type and Bisphenol F type, epoxide equivalent is approximately 169) 5 parts, naphthalene type epoxy resin (DIC(strain) system " HP4032SS ", epoxide equivalent is approximately 144) 5 parts, bis-xylene phenol-type epoxy resin (Mitsubishi Chemical's (strain) system " YX4000HK ", epoxide equivalent is approximately 185) 5 parts, biphenyl type epoxy resin (Japanese chemical drug (strain) system " NC3000H ", epoxide equivalent is approximately 288) 15 parts and phenoxy resin (Mitsubishi Chemical's (strain) system " YL7553BH30 ", weight average molecular weight is approximately 35000, solid state component is 30% MEK solution) 10 parts, stir on one side, make its heating for dissolving in 25 parts of solvent naphthas (solvent naphtha) on one side.After being cooled to room temperature, the phenol phenolic aldehyde that contains triazine skeleton to its mixing is curing agent (DIC(strain) system " LA-7054 ", hydroxy equivalent is 125, solid state component is 60% MEK solution) 10 parts, naphthols is that (aurification (strain) system " SN-485 " is lived to curing agent by Nippon Steel, hydroxy equivalent is 215, solid state component is 60% MEK solution) 10 parts, curing accelerator (4-dimethylamino yl pyrimidines (DMAP), solid state component is the MEK solution of 5 quality %) 1 part, fire retardant (three light (strain) systems " HCA-HQ ", 10-(2, 5-dihydroxy phenol)-10-hydrogen-9-oxa--10-phospho hetero phenanthrene-10-oxide, average grain diameter is 2 μ m) 3 parts, with amino silane, be that coupling agent (SHIN-ETSU HANTOTAI's chemical industry (strain) system " KBM573 ") carries out surface-treated preparing spherical SiO 2 ((strain) ADMATECHS system " SOC2 ", average grain diameter is 0.5 μ m, the average carbon amount of per surface area is 0.39mg/m
2) 100 parts, with High Rotation Speed blender, disperse equably and modulate resin varnish.
When the total of the nonvolatile component in resin varnish is made as to 100 quality %, the amount of inorganic filling material (preparing spherical SiO 2) is 67.5 quality %.
The making of (2) first adhesive films 1
Prepare PET film (LINTEC(strain) system " AL5 " that subsidiary alkyd resins is release layer, thickness is 38 μ m) as supporting mass.With dip coater, the resin varnish of above-mentioned modulation is coated in equably to the release layer side surface of this supporting mass, 80 ℃~120 ℃ (average 100 ℃) lower dry 5 minutes, forms the first heat-curing resin synthetic layer.The thickness of the first heat-curing resin synthetic layer is 50 μ m.Next, the even surface side of the polypropylene screen (the special paper of prince (strain) system " ア Le Off ァ Application MA-411 ", thickness is 15 μ m) of fitting on the surface of the first heat-curing resin synthetic layer, as diaphragm, is modulated the first adhesive film 1.
The making of (3) second adhesive films 1
Prepare PET film (LINTEC(strain) system " AL5 " that subsidiary alkyd resins is release layer, thickness is 38 μ m) as supporting mass.With dip coater, the resin varnish of above-mentioned modulation is coated in equably to the release layer side surface of this supporting mass, 80 ℃~120 ℃ (average 100 ℃) lower dry 4 minutes, forms the second heat-curing resin synthetic layer.The thickness of the second heat-curing resin synthetic layer is 30 μ m.Next, the even surface side of the polypropylene screen (the special paper of prince (strain) system " ア Le Off ァ Application MA-411 ", thickness is 15 μ m) of fitting on the surface of the second heat-curing resin synthetic layer, as diaphragm, is modulated the second adhesive film 1.
[production example 2]
(1) modulation of resin varnish
Similarly modulated resin varnish with production example 1.
The making of (2) first adhesive films 2
Prepare Copper Foil (Mitsui Metal Co., Ltd.'s mining industry (strain) system " 3EC-III ", thickness is 18 μ m) as supporting mass, prepare PET film (LINTEC(strain) system " AL5 " that subsidiary alkyd resins is release layer, thickness is 38 μ m) as diaphragm.With dip coater, the resin varnish of above-mentioned modulation is coated in equably to the release layer side surface of said protection film, 80 ℃~120 ℃ (average 100 ℃) lower dry 5 minutes, forms the first heat-curing resin synthetic layer.The thickness of the first heat-curing resin synthetic layer is 50 μ m.Next, the matsurface side of above-mentioned supporting mass is fitted in to the surface of the first heat-curing resin synthetic layer, modulation the first adhesive film 2.
The making of (3) second adhesive films 2
Prepare Copper Foil (Mitsui Metal Co., Ltd.'s mining industry (strain) system " 3EC-III ", thickness is 18 μ m) as supporting mass, prepare PET film (LINTEC(strain) system " AL5 " that subsidiary alkyd resins is release layer, thickness is 38 μ m) as diaphragm.With dip coater, the resin varnish of above-mentioned modulation is coated in equably to the release layer side surface of said protection film, 80 ℃~120 ℃ (average 100 ℃) lower dry 4 minutes, forms the second heat-curing resin synthetic layer.The thickness of the second heat-curing resin synthetic layer is 30 μ m.Next, the matsurface side of above-mentioned supporting mass is fitted in to the surface of the second heat-curing resin synthetic layer, modulation the second adhesive film 2.
[table 1-1]
[production example 3]
(1) modulation of resin varnish
To hexichol phenol-type epoxy resin, (aurification (strain) system " ZX1059 " is lived by Nippon Steel, the 1:1 melange of bisphenol A-type and Bisphenol F type, epoxide equivalent is approximately 169) 5 parts, naphthalene type epoxy resin (DIC(strain) system " HP4032SS ", epoxide equivalent is approximately 144) 5 parts, bis-xylene phenol-type epoxy resin (Mitsubishi Chemical's (strain) system " YX4000HK ", epoxide equivalent is approximately 185) 5 parts, biphenyl type epoxy resin (Japanese chemical drug (strain) system " NC3000H ", epoxide equivalent is approximately 288) 15 parts and phenoxy resin (Mitsubishi Chemical's (strain) system " YL7553BH30 ", weight average molecular weight is approximately 35000, solid state component is 30% MEK solution) 10 parts, stir on one side, make its heating for dissolving in 25 parts of solvent naphthas on one side.After being cooled to room temperature, the phenol phenolic aldehyde that contains triazine skeleton to its mixing is curing agent (DIC(strain) system " LA-7054 ", hydroxy equivalent is 125, solid state component is 60% MEK solution) 10 parts, naphthols is that (aurification (strain) system " SN-485 " is lived to curing agent by Nippon Steel, hydroxy equivalent is 215, solid state component is 60% MEK solution) 10 parts, curing accelerator (4-dimethylamino yl pyrimidines (DMAP), solid state component is the MEK solution of 5 quality %) 1 part, fire retardant (three light (strain) systems " HCA-HQ ", 10-(2, 5-dihydroxy phenol)-10-hydrogen-9-oxa--10-phospho hetero phenanthrene-10-oxide, average grain diameter is 2 μ m) 3 parts, with amino silane, be that coupling agent (SHIN-ETSU HANTOTAI's chemical industry (strain) system " KBM573 ") carries out surface-treated preparing spherical SiO 2 ((strain) ADMATECHS system " SOC2 ", average grain diameter is 0.5 μ m, the carbon amount 0.39mg/m that per surface area is average
2) 100 parts, with High Rotation Speed blender, disperse equably and modulate resin varnish.
When the total of the nonvolatile component in resin varnish is made as to 100 quality %, the amount of inorganic filling material (preparing spherical SiO 2) is 67.5 quality %.
The making of (2) first adhesive films 3
Prepare PET film (LINTEC(strain) system " AL5 " that subsidiary alkyd resins is release layer, thickness is 38 μ m) as supporting mass.With dip coater, the resin varnish of above-mentioned modulation is coated in equably to the release layer side surface of this supporting mass, 80 ℃~120 ℃ (average 100 ℃) lower dry 5 minutes, forms the first heat-curing resin synthetic layer.The thickness of the first heat-curing resin synthetic layer is 50 μ m.Next, the first adhesive film 3, as diaphragm, is modulated in the surface that the even surface side of polypropylene screen (the special paper of prince (strain) system " ア Le Off ァ Application MA-411 ", thickness is 15 μ m) is fitted in to the first heat-curing resin synthetic layer.
The making of (3) second adhesive films 3
Prepare PET film (LINTEC(strain) system " AL5 " that subsidiary alkyd resins is release layer, thickness is 38 μ m) as supporting mass.With dip coater, the resin varnish of above-mentioned modulation is coated in equably to the release layer side surface of this supporting mass, 80 ℃~120 ℃ (average 100 ℃) lower dry 4 minutes, forms the second heat-curing resin synthetic layer.The thickness of the second heat-curing resin synthetic layer is 30 μ m.Next, the second adhesive film 3, as diaphragm, is modulated in the surface that the even surface side of polypropylene screen (the special paper of prince (strain) system " ア Le Off ァ Application MA-411 ", thickness is 15 μ m) is fitted in to the second heat-curing resin synthetic layer.
[production example 4]
(1) modulation of resin varnish
Similarly modulated resin varnish with production example 3.
The making of (2) first adhesive films 4
Prepare Copper Foil (Mitsui Metal Co., Ltd.'s mining industry (strain) system " 3EC-III ", thickness is 18 μ m) as supporting mass, prepare PET film (LINTEC(strain) system " AL5 " that subsidiary alkyd resins is release layer, thickness is 38 μ m) as diaphragm.With dip coater, the resin varnish of above-mentioned modulation is coated in equably to the release layer side surface of said protection film, 80 ℃~120 ℃ (average 100 ℃) lower dry 5 minutes, forms the first heat-curing resin synthetic layer.The thickness of the first heat-curing resin synthetic layer is 50 μ m.Next, the matsurface side of above-mentioned supporting mass is fitted in to the surface of the first heat-curing resin synthetic layer, modulation the first adhesive film 4.
The making of (3) second adhesive films 4
Prepare Copper Foil (Mitsui Metal Co., Ltd.'s mining industry (strain) system " 3EC-III ", thickness is 18 μ m) as supporting mass, prepare PET film (LINTEC(strain) system " AL5 " that subsidiary alkyd resins is release layer, thickness is 38 μ m) as diaphragm.With dip coater, the resin varnish of above-mentioned modulation is coated in equably to the release layer side surface of said protection film, 80 ℃~120 ℃ (average 100 ℃) lower dry 4 minutes, forms the second heat-curing resin synthetic layer.The thickness of the second heat-curing resin synthetic layer is 30 μ m.Next, the matsurface side of above-mentioned supporting mass is fitted in to the surface of the second heat-curing resin synthetic layer, modulation the second adhesive film 4.
[table 1-2]
< embodiment 1-1>
Use the first adhesive film 1 and the second adhesive film 1, according to the order manufacture of above-mentioned [modulation 1 of measurement, sample for evaluation], evaluate substrate a1, b1 and c1.Each evaluation result is shown in to table 2-1.
< embodiment 1-2>
Use the first adhesive film 2 and the second adhesive film 2, according to the order manufacture of above-mentioned [modulation 1 of measurement, sample for evaluation], evaluate substrate a1, b1 and c1.Each evaluation result is shown in to table 2-1.
< embodiment 1-3>
Use the first adhesive film 1 and the second adhesive film 1, according to the order manufacture of above-mentioned [modulation 1 of measurement, sample for evaluation], evaluate substrate a1, b1 and c1.Each evaluation result is shown in to table 2-1.
< comparative example 1-1>
Use the first adhesive film 1 and the second adhesive film 1, according to the order manufacture of above-mentioned [modulation 1 of measurement, sample for evaluation], evaluate substrate a1, b1 and c1.Each evaluation result is shown in to table 2-1.
< comparative example 1-2>
Use the first adhesive film 1 and the second adhesive film 1, according to the order manufacture of above-mentioned [modulation 1 of measurement, sample for evaluation], evaluate substrate a1, b1 and c1.Each evaluation result is shown in to table 2-1.
[table 2-1]
< embodiment 2-1>
Use the first adhesive film 3 and the second adhesive film 3, according to the order manufacture of above-mentioned [modulation 2 of measurement, sample for evaluation], evaluate substrate a2, b2 and c2.Each evaluation result is shown in to 2-2.
< embodiment 2-2>
Use the first adhesive film 4 and the second adhesive film 4, according to the order manufacture of above-mentioned [modulation 2 of measurement, sample for evaluation], evaluate substrate a2, b2 and c2.Each evaluation result is shown in to 2-2.
< embodiment 2-3>
Use the first adhesive film 3 and the second adhesive film 3, according to the order manufacture of above-mentioned [modulation 2 of measurement, sample for evaluation], evaluate substrate a2, b2 and c2.Each evaluation result is shown in to table 2-2.
< comparative example 2-1>
Use the first adhesive film 3 and the second adhesive film 3, according to the order manufacture of above-mentioned [modulation 2 of measurement, sample for evaluation], evaluate substrate a2, b2 and c2.Each evaluation result is shown in to 2-2.
< comparative example 2-2>
Use the first adhesive film 3 and the second adhesive film 3, according to the order manufacture of above-mentioned [modulation 2 of measurement, sample for evaluation], evaluate substrate a2, b2 and c2.Each evaluation result is shown in to 2-2.
[table 2-2]
As show as shown in 2-1 and table 2-2, can confirm, in adopting embodiment 1-1~1-3, the 2-1~2-3 of the operation (B) of the first heat-curing resin synthetic layer being carried out heat treated under defined terms, even in the situation that used thickness is the internal substrate that 150 μ m are thin like this (circuit substrate or insulated substrate), also can suppress the generation of substrate warp.In addition, can confirm, in such embodiment 1-1~1-3,2-1~2-3, can also suppress the position deviation of parts.
On the other hand, in comparative example 1-1 and 2-1, produced significant substrate warp, because substrate transmits obstacle, rate of finished products reduces (the minimum melting viscosity of the first heat-curing resin synthetic layer after heat treated has surpassed measurement higher limit (200000 pool)) significantly.In addition, in comparative example 1-2 and 2-2, can confirm, the position deviation (about the minimum melting viscosity of the first heat-curing resin synthetic layer after heat treated, comparative example 1-2 is 6300, and comparative example 2-2 is 6150) of obvious parts has occurred.
Description of reference numerals
11: circuit substrate;
11': the circuit substrate that is temporarily equipped with parts;
12: substrate;
12a: chamber;
13: wiring;
14: interim fabricated material;
15: parts;
21: insulated substrate;
21': the insulated substrate that is temporarily equipped with parts;
21a: chamber;
24: wiring;
25: parts;
100: the first adhesive films;
101: the first supporting masses;
102: the first heat-curing resin synthetic layers;
102': the first heat-curing resin synthetic layer (heat treated body);
102 ": the first heat-curing resin synthetic layer (firming body);
200: the second adhesive films;
201: the second supporting masses;
202: the second heat-curing resin synthetic layers;
202 ": the second heat-curing resin synthetic layer (firming body);
30: horizontal plane;
31: stationary fixture;
40: vertical plane;
50: evaluate substrate a1;
60: evaluate substrate a2;
1000: parts internally-arranged type circuit board (parts internally-arranged type circuit board);
2000: parts internally-arranged type circuit board (parts internally-arranged type substrate).
Claims (17)
1. a manufacture method for parts internally-arranged type circuit board, comprises following operation (A), (B), (C) and (D) in order:
(A) be equipped with on the internal substrate of parts temporarily, to the first adhesive film of the first heat-curing resin synthetic layer that comprises the first supporting mass and engage with this first supporting mass so that this first heat-curing resin synthetic layer carries out vacuum laminated operation with the mode that the first interarea of internal substrate engages, wherein
The described internal substrate that is temporarily equipped with parts comprises:
Internal substrate, has the first and second interareas, is formed with the chamber connecting between this first and second interarea;
Interim fabricated material, engages with the second interarea of this internal substrate; And
Parts are assemblied in the inside in the chamber of described internal substrate temporarily by described interim fabricated material;
(B) in order to suppress the position deviation of described parts in following operation (C), the first heat-curing resin synthetic layer is carried out to heat treated, and, the operation that this heat treated is carried out in the scope that suppresses the generation of substrate warp;
(C) after the second interarea of internal substrate is peeled off interim fabricated material, to the second adhesive film of the second heat-curing resin synthetic layer that comprises the second supporting mass and engage with this second supporting mass so that this second heat-curing resin synthetic layer carries out vacuum laminated operation with the mode that the second interarea of internal substrate engages; And
(D) the first and second heat-curing resin synthetic layers carried out to hot curing and form the operation of insulating barrier.
2. method according to claim 1, wherein,
Internal substrate is circuit substrate.
3. method according to claim 1, wherein,
Internal substrate is insulated substrate.
4. method according to claim 3, wherein,
Insulated substrate is to solidify prepreg, glass substrate or ceramic substrate.
5. method according to claim 1, wherein,
The minimum melting viscosity of the first heat-curing resin synthetic layer in the first adhesive film is 100~10000 pools.
6. method according to claim 1, wherein,
In operation (B), the first heat-curing resin synthetic layer so that becoming the mode of 15000~200000 pools, its minimum melting viscosity is carried out to heat treated.
7. method according to claim 1, wherein,
In operation (B), under the state that is provided with the first supporting mass, carry out heat treated.
8. method according to claim 1, wherein,
Spacing between chamber is 1~10mm.
9. method according to claim 1, wherein,
The second heat-curing resin synthetic layer is thinner than the first heat-curing resin synthetic layer.
10. method according to claim 2, wherein,
The thickness of circuit substrate is 50~350 μ m.
11. methods according to claim 3, wherein,
The thickness of insulated substrate is 30~350 μ m.
12. methods according to claim 2, wherein,
From the substrate obtaining in operation (B), obtaining planar dimension is L(mm) * W(mm) test film time, the warpage of this test film is 0.1L(mm) below, at this, L >=W, L is below 550mm.
13. methods according to claim 3, wherein,
The warpage of the substrate obtaining in operation (B) is below 25mm.
14. methods according to claim 1, wherein,
The operation that also comprises (E) perforate.
15. methods according to claim 1, wherein,
Also comprise that (F) forms the operation of conductor layer on insulating barrier.
16. methods according to claim 15, wherein,
Operation (F) comprising:
Insulating barrier is carried out to roughening treatment; And
By being plated on the insulating barrier after alligatoring, form conductor layer.
17. 1 kinds of semiconductor devices, comprise the parts internally-arranged type circuit board of manufacturing by the method described in any one of claim 1~16.
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TWI610606B (en) | 2018-01-01 |
TW201503789A (en) | 2015-01-16 |
KR102128703B1 (en) | 2020-07-02 |
CN104010448B (en) | 2018-04-10 |
KR20140104909A (en) | 2014-08-29 |
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