CH563188A5 - - Google Patents
Info
- Publication number
- CH563188A5 CH563188A5 CH1751170A CH1751170A CH563188A5 CH 563188 A5 CH563188 A5 CH 563188A5 CH 1751170 A CH1751170 A CH 1751170A CH 1751170 A CH1751170 A CH 1751170A CH 563188 A5 CH563188 A5 CH 563188A5
- Authority
- CH
- Switzerland
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL6917985A NL6917985A (no) | 1969-11-29 | 1969-11-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH563188A5 true CH563188A5 (no) | 1975-06-30 |
Family
ID=19808511
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH1751170A CH563188A5 (no) | 1969-11-29 | 1970-11-26 |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS494582B1 (no) |
| BE (1) | BE759585A (no) |
| CH (1) | CH563188A5 (no) |
| DE (1) | DE2056160A1 (no) |
| FR (1) | FR2072498A5 (no) |
| GB (1) | GB1322347A (no) |
| NL (1) | NL6917985A (no) |
| SE (1) | SE355958B (no) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52135075U (no) * | 1976-04-08 | 1977-10-14 | ||
| CN117467984B (zh) * | 2023-11-08 | 2024-07-05 | 江苏首芯半导体科技有限公司 | 薄膜沉积装置及沉积方法 |
-
1969
- 1969-11-29 NL NL6917985A patent/NL6917985A/xx unknown
-
1970
- 1970-11-14 DE DE19702056160 patent/DE2056160A1/de active Pending
- 1970-11-26 CH CH1751170A patent/CH563188A5/xx not_active IP Right Cessation
- 1970-11-26 GB GB5623670A patent/GB1322347A/en not_active Expired
- 1970-11-26 SE SE1603570A patent/SE355958B/xx unknown
- 1970-11-26 JP JP10371770A patent/JPS494582B1/ja active Pending
- 1970-11-27 FR FR7042664A patent/FR2072498A5/fr not_active Expired
- 1970-11-27 BE BE759585D patent/BE759585A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| SE355958B (no) | 1973-05-14 |
| DE2056160A1 (de) | 1971-06-03 |
| FR2072498A5 (no) | 1971-09-24 |
| NL6917985A (no) | 1971-06-02 |
| JPS494582B1 (no) | 1974-02-01 |
| GB1322347A (en) | 1973-07-04 |
| BE759585A (fr) | 1971-05-27 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PL | Patent ceased |