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GB1322347A - Methods of depositing semiconductor material - Google Patents

Methods of depositing semiconductor material

Info

Publication number
GB1322347A
GB1322347A GB5623670A GB5623670A GB1322347A GB 1322347 A GB1322347 A GB 1322347A GB 5623670 A GB5623670 A GB 5623670A GB 5623670 A GB5623670 A GB 5623670A GB 1322347 A GB1322347 A GB 1322347A
Authority
GB
United Kingdom
Prior art keywords
silicon
semi
conductor material
hydrogen
deposited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5623670A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1322347A publication Critical patent/GB1322347A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

1322347 Silicon PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 26 Nov 1970 [29 Nov 1969] 56236/70 Heading C1A [Also in Division C7] Elementary semi-conductor material is deposited on a heated substrate by thermal decomposition of a gaseous compound consisting of the semi-conductor material and hydrogen in the presence of a hydrogen halide. In an exemplified embodiment silicon is deposited on a monocrystalline silicon substrate by thermal decomposition of SiH 4 in the presence of HCl. The molar ratio of HCl to SiH 4 may range from 0À1 to 15 and the reactants may be transported in a carrier gas e.g. hydrogen in concentrations of 0À03 to 0À3 vol. per cent. The pressure may be in the range 0À1-1 mm Hg and deposition is desirably carried out at between 900 and 1200‹C. Dopant hydrides such as PH 3 , AsH 3 or B 2 H 6 may be incorporated in the gas flow and are deposited along with the silicon. The process may be carried out in a tubular reactor with several substrates being placed one behind the other on a plane at an angle to the horizontal. HBr may be used as the hydrogen halide and other substrates include sapphire and monocrystalline magnesium aluminate. The process may be used to deposit polycrystalline layers of semi-conductor material on a polycrystalline substrate.
GB5623670A 1969-11-29 1970-11-26 Methods of depositing semiconductor material Expired GB1322347A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6917985A NL6917985A (en) 1969-11-29 1969-11-29

Publications (1)

Publication Number Publication Date
GB1322347A true GB1322347A (en) 1973-07-04

Family

ID=19808511

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5623670A Expired GB1322347A (en) 1969-11-29 1970-11-26 Methods of depositing semiconductor material

Country Status (8)

Country Link
JP (1) JPS494582B1 (en)
BE (1) BE759585A (en)
CH (1) CH563188A5 (en)
DE (1) DE2056160A1 (en)
FR (1) FR2072498A5 (en)
GB (1) GB1322347A (en)
NL (1) NL6917985A (en)
SE (1) SE355958B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117467984A (en) * 2023-11-08 2024-01-30 江苏首芯半导体科技有限公司 Thin film deposition apparatus and deposition method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52135075U (en) * 1976-04-08 1977-10-14

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117467984A (en) * 2023-11-08 2024-01-30 江苏首芯半导体科技有限公司 Thin film deposition apparatus and deposition method

Also Published As

Publication number Publication date
SE355958B (en) 1973-05-14
DE2056160A1 (en) 1971-06-03
FR2072498A5 (en) 1971-09-24
NL6917985A (en) 1971-06-02
JPS494582B1 (en) 1974-02-01
CH563188A5 (en) 1975-06-30
BE759585A (en) 1971-05-27

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee