ATE81229T1 - Verfahren zur herstellung eines zwischenverbindungstraegers fuer elektronische bauelemente. - Google Patents
Verfahren zur herstellung eines zwischenverbindungstraegers fuer elektronische bauelemente.Info
- Publication number
- ATE81229T1 ATE81229T1 AT86420188T AT86420188T ATE81229T1 AT E81229 T1 ATE81229 T1 AT E81229T1 AT 86420188 T AT86420188 T AT 86420188T AT 86420188 T AT86420188 T AT 86420188T AT E81229 T1 ATE81229 T1 AT E81229T1
- Authority
- AT
- Austria
- Prior art keywords
- heated
- electronic components
- substrate
- allowing
- manufacturing
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000012298 atmosphere Substances 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 abstract 2
- 238000000576 coating method Methods 0.000 abstract 2
- 230000001590 oxidative effect Effects 0.000 abstract 2
- 239000000843 powder Substances 0.000 abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract 1
- 239000000919 ceramic Substances 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 229910052878 cordierite Inorganic materials 0.000 abstract 1
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- 229910052763 palladium Inorganic materials 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 239000004332 silver Substances 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
- 239000010937 tungsten Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
- H01L21/4807—Ceramic parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4867—Applying pastes or inks, e.g. screen printing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/4038—Through-connections; Vertical interconnect access [VIA] connections
- H05K3/4053—Through-connections; Vertical interconnect access [VIA] connections by thick-film techniques
- H05K3/4061—Through-connections; Vertical interconnect access [VIA] connections by thick-film techniques for via connections in inorganic insulating substrates
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
- H05K3/4626—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials
- H05K3/4629—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials laminating inorganic sheets comprising printed circuits, e.g. green ceramic sheets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49126—Assembling bases
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Powder Metallurgy (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Coupling Device And Connection With Printed Circuit (AREA)
- Conductive Materials (AREA)
- Wire Bonding (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8510871A FR2585181B1 (fr) | 1985-07-16 | 1985-07-16 | Procede de fabrication d'un substrat d'interconnexion pour composants electroniques, et substrat obtenu par sa mise en oeuvre |
EP86420188A EP0214916B1 (de) | 1985-07-16 | 1986-07-11 | Verfahren zur Herstellung eines Zwischenverbindungsträgers für elektronische Bauelemente |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE81229T1 true ATE81229T1 (de) | 1992-10-15 |
Family
ID=9321340
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT86420188T ATE81229T1 (de) | 1985-07-16 | 1986-07-11 | Verfahren zur herstellung eines zwischenverbindungstraegers fuer elektronische bauelemente. |
Country Status (6)
Country | Link |
---|---|
US (1) | US4775503A (de) |
EP (1) | EP0214916B1 (de) |
JP (1) | JPS6221257A (de) |
AT (1) | ATE81229T1 (de) |
DE (1) | DE3686857T2 (de) |
FR (1) | FR2585181B1 (de) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0650792B2 (ja) * | 1987-10-19 | 1994-06-29 | インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン | 耐酸化金属導体を含むセラミック構造体及びその製造方法 |
FR2626270B1 (fr) * | 1988-01-22 | 1992-04-30 | Pechiney Recherche | Procede de cofrittage, de conducteurs en cuivre ou en alliages a base de cuivre et de leur substrat ceramique en cordierite |
JPH0461293A (ja) * | 1990-06-29 | 1992-02-27 | Toshiba Corp | 回路基板及びその製造方法 |
JP2584911B2 (ja) * | 1991-06-18 | 1997-02-26 | 富士通株式会社 | ガラス−セラミック多層回路基板の製造方法 |
FR2688929B1 (fr) * | 1992-03-23 | 1994-05-20 | Xeram | Procede d'obtention d'inserts ceramiques isolants par empilement multicouches. |
US6146743A (en) * | 1997-02-21 | 2000-11-14 | Medtronic, Inc. | Barrier metallization in ceramic substrate for implantable medical devices |
EP0989570A4 (de) * | 1998-01-22 | 2005-08-31 | Matsushita Electric Ind Co Ltd | Tinte für elekronisches bauteil, verfahren zur herstellung eines elektronischen bauteils unter verwendung der tinte, und tintenstrahlvorrichtung |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4301324A (en) * | 1978-02-06 | 1981-11-17 | International Business Machines Corporation | Glass-ceramic structures and sintered multilayer substrates thereof with circuit patterns of gold, silver or copper |
US4413061A (en) * | 1978-02-06 | 1983-11-01 | International Business Machines Corporation | Glass-ceramic structures and sintered multilayer substrates thereof with circuit patterns of gold, silver or copper |
US4234367A (en) * | 1979-03-23 | 1980-11-18 | International Business Machines Corporation | Method of making multilayered glass-ceramic structures having an internal distribution of copper-based conductors |
DE3326689A1 (de) * | 1983-07-23 | 1985-01-31 | Boehringer Mannheim Gmbh, 6800 Mannheim | Verfahren und vorrichtung zur herstellung eines teststreifens |
US4540621A (en) * | 1983-07-29 | 1985-09-10 | Eggerding Carl L | Dielectric substrates comprising cordierite and method of forming the same |
FR2556503B1 (fr) * | 1983-12-08 | 1986-12-12 | Eurofarad | Substrat d'interconnexion en alumine pour composant electronique |
-
1985
- 1985-07-16 FR FR8510871A patent/FR2585181B1/fr not_active Expired
-
1986
- 1986-07-10 US US06/885,953 patent/US4775503A/en not_active Expired - Fee Related
- 1986-07-11 AT AT86420188T patent/ATE81229T1/de not_active IP Right Cessation
- 1986-07-11 EP EP86420188A patent/EP0214916B1/de not_active Expired - Lifetime
- 1986-07-11 DE DE8686420188T patent/DE3686857T2/de not_active Expired - Fee Related
- 1986-07-15 JP JP61166553A patent/JPS6221257A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
US4775503A (en) | 1988-10-04 |
DE3686857T2 (de) | 1993-04-15 |
JPS6221257A (ja) | 1987-01-29 |
EP0214916B1 (de) | 1992-09-30 |
FR2585181A1 (fr) | 1987-01-23 |
FR2585181B1 (fr) | 1988-11-18 |
DE3686857D1 (de) | 1992-11-05 |
JPH0231518B2 (de) | 1990-07-13 |
EP0214916A1 (de) | 1987-03-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
UEP | Publication of translation of european patent specification | ||
REN | Ceased due to non-payment of the annual fee |