ATE544174T1 - Mim kondensator und verfahren zur herstellung eines mim kondensators - Google Patents
Mim kondensator und verfahren zur herstellung eines mim kondensatorsInfo
- Publication number
- ATE544174T1 ATE544174T1 AT07820782T AT07820782T ATE544174T1 AT E544174 T1 ATE544174 T1 AT E544174T1 AT 07820782 T AT07820782 T AT 07820782T AT 07820782 T AT07820782 T AT 07820782T AT E544174 T1 ATE544174 T1 AT E544174T1
- Authority
- AT
- Austria
- Prior art keywords
- mim capacitor
- producing
- bottom plates
- metal
- capacitor
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000002184 metal Substances 0.000 abstract 1
- 239000002121 nanofiber Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
- H01L28/91—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/008—Selection of materials
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP06301014 | 2006-10-04 | ||
| PCT/EP2007/060400 WO2008040706A1 (en) | 2006-10-04 | 2007-10-01 | Mim capacitor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE544174T1 true ATE544174T1 (de) | 2012-02-15 |
Family
ID=38759992
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT07820782T ATE544174T1 (de) | 2006-10-04 | 2007-10-01 | Mim kondensator und verfahren zur herstellung eines mim kondensators |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP2074641B1 (de) |
| JP (1) | JP5091242B2 (de) |
| CN (1) | CN101573772B (de) |
| AT (1) | ATE544174T1 (de) |
| WO (1) | WO2008040706A1 (de) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8274777B2 (en) | 2008-04-08 | 2012-09-25 | Micron Technology, Inc. | High aspect ratio openings |
| US20110089477A1 (en) * | 2008-06-13 | 2011-04-21 | Qunano Ab | Nanostructured mos capacitor |
| US7858506B2 (en) | 2008-06-18 | 2010-12-28 | Micron Technology, Inc. | Diodes, and methods of forming diodes |
| US8268695B2 (en) | 2008-08-13 | 2012-09-18 | Micron Technology, Inc. | Methods of making capacitors |
| RU2444078C1 (ru) * | 2010-12-23 | 2012-02-27 | Общество с ограниченной ответственностью "БАРГАН ТЕХНОЛОДЖИ" (ООО "БТЕХ") | Способ изготовления слоистой наноструктуры для двухобкладочных конденсаторов |
| GB2501872B8 (en) * | 2012-05-03 | 2022-08-03 | Dyson Technology Ltd | Coated Structured Surfaces |
| GB201207766D0 (en) * | 2012-05-03 | 2012-06-13 | Dyson Technology Ltd | Dielectric capacitor |
| RU2533010C2 (ru) * | 2012-06-19 | 2014-11-20 | Общество с ограниченной ответственностью "Электронные приборы и системы ". | Способ изготовления планарного конденсатора повышенной емкости |
| US9755013B2 (en) * | 2015-04-22 | 2017-09-05 | Globalfoundries Inc. | High density capacitor structure and method |
| TWI766072B (zh) * | 2017-08-29 | 2022-06-01 | 瑞典商斯莫勒科技公司 | 能量存儲中介層裝置、電子裝置和製造方法 |
| EP3867935A4 (de) * | 2018-10-18 | 2022-07-13 | Smoltek AB | Diskretes metall-isolator-metall(mim)-energiespeicherbauteil und herstellungsverfahren |
| TW202038266A (zh) * | 2018-11-26 | 2020-10-16 | 瑞典商斯莫勒科技公司 | 具有離散的能量儲存構件之半導體組件 |
| WO2021059569A1 (ja) | 2019-09-25 | 2021-04-01 | 株式会社村田製作所 | キャパシタおよびその製造方法 |
| US11038011B2 (en) | 2019-10-29 | 2021-06-15 | Globalfoundries U.S. Inc. | Metal-insulator-metal capacitors including nanofibers |
| US20230075019A1 (en) * | 2020-02-06 | 2023-03-09 | Smoltek Ab | Electronic system with power distribution network including capacitor coupled to component pads |
| TW202141805A (zh) * | 2020-04-17 | 2021-11-01 | 瑞典商斯莫勒科技公司 | 具有分層堆疊的金屬-絕緣體-金屬(mim)能量儲存裝置及製造方法 |
| WO2021229871A1 (ja) * | 2020-05-12 | 2021-11-18 | 株式会社村田製作所 | 構造体 |
| WO2022107696A1 (ja) * | 2020-11-19 | 2022-05-27 | 株式会社村田製作所 | キャパシタ |
| WO2022113843A1 (ja) | 2020-11-27 | 2022-06-02 | 株式会社村田製作所 | キャパシタ |
| WO2023210134A1 (ja) * | 2022-04-26 | 2023-11-02 | 株式会社村田製作所 | キャパシタおよびキャパシタの製造方法 |
| JPWO2024095536A1 (de) * | 2022-11-01 | 2024-05-10 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI292583B (en) * | 2000-08-22 | 2008-01-11 | Harvard College | Doped elongated semiconductor articles, growing such articles, devices including such articles and fabicating such devices |
| TW506083B (en) * | 2001-11-28 | 2002-10-11 | Ind Tech Res Inst | Method of using nano-tube to increase semiconductor device capacitance |
| JP4695817B2 (ja) * | 2002-10-23 | 2011-06-08 | 富士通株式会社 | キャパシタ、半導体記憶装置及び方法 |
| US7163659B2 (en) * | 2002-12-03 | 2007-01-16 | Hewlett-Packard Development Company, L.P. | Free-standing nanowire sensor and method for detecting an analyte in a fluid |
| EP1738378A4 (de) | 2004-03-18 | 2010-05-05 | Nanosys Inc | Auf nanofaseroberflächen basierende kondensatoren |
-
2007
- 2007-10-01 AT AT07820782T patent/ATE544174T1/de active
- 2007-10-01 WO PCT/EP2007/060400 patent/WO2008040706A1/en active Application Filing
- 2007-10-01 JP JP2009530868A patent/JP5091242B2/ja not_active Expired - Fee Related
- 2007-10-01 EP EP07820782A patent/EP2074641B1/de active Active
- 2007-10-01 CN CN200780037157XA patent/CN101573772B/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| WO2008040706A1 (en) | 2008-04-10 |
| CN101573772A (zh) | 2009-11-04 |
| JP5091242B2 (ja) | 2012-12-05 |
| EP2074641A1 (de) | 2009-07-01 |
| EP2074641B1 (de) | 2012-02-01 |
| CN101573772B (zh) | 2011-10-05 |
| JP2010506391A (ja) | 2010-02-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| ATE544174T1 (de) | Mim kondensator und verfahren zur herstellung eines mim kondensators | |
| ATE507607T1 (de) | Dielektrischer verbundwerkstoff und verfahren zur herstellung eines dielektrischen verbundwerkstoffs | |
| GB2462242B (en) | Multiple side draws during distillation in the production of base oil blends from waxy feeds | |
| TW200642033A (en) | Methods of forming pluralities of capacitors | |
| DE602006004751D1 (de) | Verfahren zur Herstellung eines planaren Kondensators | |
| ATE429309T1 (de) | Flexibles schleif-erzeugnis und verfahren zu dessen herstellung | |
| DE602006018223D1 (de) | Verfahren zur Herstellung von Leuchtdioden | |
| WO2009100869A3 (de) | Sicherheitselement und verfahren zu seiner herstellung | |
| ATE477220T1 (de) | Verfahren zur herstellung von mikrofluidischen vorrichtungen | |
| ATE469957T1 (de) | Verfahren zur herstellung von ölzusammensetzungen | |
| WO2008126313A1 (ja) | インプリント用モールドおよびインプリント用モールドの製造方法 | |
| WO2008003447A3 (de) | Fluortenside | |
| EP2202783A3 (de) | Kondensator und Verfahren zu dessen Herstellung | |
| DE602005019848D1 (de) | Verfahren zur herstellung von tad- getrocknetem ti | |
| DE502006001472D1 (de) | Verfahren zur kontinuierlichen Herstellung von hochviskosen vernetzbaren Siliconmassen | |
| WO2009097968A3 (de) | Offenporige biokompatible oberflächenschicht für ein implantat, verfahren zur herstellung und verwendung | |
| WO2011160829A3 (de) | Filtermaterial für fluide und verfahren zur herstellung eines filtermaterials | |
| EP1881369A3 (de) | Verfahren zur Herstellung eines Farbfilters | |
| DE602006021446D1 (de) | Verfahren zur herstellung von hochmolekularem latexharzpulver | |
| EP2390239A3 (de) | Synthetisches Quarzglassubstrat und Herstellungsverfahren | |
| DE602006018433D1 (de) | Positiv arbeitende fotoresistzusammensetzung zur herstellung von dickschichten | |
| DE602005008346D1 (de) | Organische lichtemittierende Vorrichtung mit einer Kathode, die eine Magnesium-Calcium Schicht enthält und Verfahren zur Herstellung dieser Vorrichtung | |
| DE602007011930D1 (de) | Prepreg-anordnung zur herstellung von strukturen, zum beispiel welche, die sich durch aufblasen entfalten | |
| DE602007001567D1 (de) | Verfahren zur Herstellung von Fotomasken-Rohlingen | |
| DE602004005145D1 (de) | Verfahren zur Herstellung von Dünnschichtkondensatoren auf keramischem Substrat |