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ATE458261T1 - Plasmabehandlungsgerät - Google Patents

Plasmabehandlungsgerät

Info

Publication number
ATE458261T1
ATE458261T1 AT99958406T AT99958406T ATE458261T1 AT E458261 T1 ATE458261 T1 AT E458261T1 AT 99958406 T AT99958406 T AT 99958406T AT 99958406 T AT99958406 T AT 99958406T AT E458261 T1 ATE458261 T1 AT E458261T1
Authority
AT
Austria
Prior art keywords
chamber
gas
plasma
treatment device
plasma treatment
Prior art date
Application number
AT99958406T
Other languages
English (en)
Inventor
Jyoti Bhardwaj
Leslie Michael Lea
Original Assignee
Surface Technology Systems Plc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GBGB9827196.8A external-priority patent/GB9827196D0/en
Priority claimed from GBGB9901869.9A external-priority patent/GB9901869D0/en
Priority claimed from GBGB9908459.2A external-priority patent/GB9908459D0/en
Application filed by Surface Technology Systems Plc filed Critical Surface Technology Systems Plc
Application granted granted Critical
Publication of ATE458261T1 publication Critical patent/ATE458261T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H01J2237/3348—Problems associated with etching control of ion bombardment energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
AT99958406T 1998-12-11 1999-12-10 Plasmabehandlungsgerät ATE458261T1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
GBGB9827196.8A GB9827196D0 (en) 1998-12-11 1998-12-11 Plasma processing apparatus
GBGB9901869.9A GB9901869D0 (en) 1999-01-29 1999-01-29 Plasma processing apparatus
GBGB9908459.2A GB9908459D0 (en) 1999-04-14 1999-04-14 Plasma processing apparatus
PCT/GB1999/004168 WO2000036631A1 (en) 1998-12-11 1999-12-10 Plasma processing apparatus

Publications (1)

Publication Number Publication Date
ATE458261T1 true ATE458261T1 (de) 2010-03-15

Family

ID=27269583

Family Applications (1)

Application Number Title Priority Date Filing Date
AT99958406T ATE458261T1 (de) 1998-12-11 1999-12-10 Plasmabehandlungsgerät

Country Status (7)

Country Link
US (1) US7491649B2 (de)
EP (1) EP1055250B1 (de)
JP (1) JP4714309B2 (de)
KR (2) KR100768610B1 (de)
AT (1) ATE458261T1 (de)
DE (1) DE69942020D1 (de)
WO (1) WO2000036631A1 (de)

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GB0100958D0 (en) * 2001-01-13 2001-02-28 Surface Technology Systems Ltd Plasma processing apparatus
DE10209763A1 (de) * 2002-03-05 2003-10-02 Bosch Gmbh Robert Vorrichtung und Verfahren zum anisotropen Plasmaätzen eines Substrates, insbesondere eines Siliziumkörpers
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US7446335B2 (en) * 2004-06-18 2008-11-04 Regents Of The University Of Minnesota Process and apparatus for forming nanoparticles using radiofrequency plasmas
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JP2009545101A (ja) * 2006-07-20 2009-12-17 アビザ テクノロジー リミティド プラズマ源
JP5313893B2 (ja) 2006-07-20 2013-10-09 エスピーティーエス テクノロジーズ イーティー リミティド イオンデポジション装置
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US8802545B2 (en) * 2011-03-14 2014-08-12 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
FR2984594A1 (fr) 2011-12-20 2013-06-21 St Microelectronics Crolles 2 Procede de realisation d'une tranchee profonde dans un substrat de composant microelectronique
US9484214B2 (en) * 2014-02-19 2016-11-01 Lam Research Corporation Systems and methods for improving wafer etch non-uniformity when using transformer-coupled plasma
KR102306979B1 (ko) 2014-04-01 2021-09-30 에베 그룹 에. 탈너 게엠베하 기질의 표면 처리를 위한 방법 및 장치
KR102085044B1 (ko) * 2015-05-22 2020-03-05 가부시키가이샤 히다치 하이테크놀로지즈 플라스마 처리 장치 및 그것을 이용한 플라스마 처리 방법
KR102334378B1 (ko) * 2015-09-23 2021-12-02 삼성전자 주식회사 유전체 윈도우, 그 윈도우를 포함한 플라즈마 공정 시스템, 및 그 시스템을 이용한 반도체 소자 제조방법
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US10714329B2 (en) * 2018-09-28 2020-07-14 Taiwan Semiconductor Manufacturing Co., Ltd. Pre-clean for contacts
KR102679420B1 (ko) * 2018-12-17 2024-07-02 삼성디스플레이 주식회사 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법

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Also Published As

Publication number Publication date
US7491649B2 (en) 2009-02-17
EP1055250A1 (de) 2000-11-29
US20050159010A1 (en) 2005-07-21
DE69942020D1 (de) 2010-04-01
EP1055250B1 (de) 2010-02-17
JP4714309B2 (ja) 2011-06-29
JP2002532896A (ja) 2002-10-02
WO2000036631A1 (en) 2000-06-22
KR100768610B1 (ko) 2007-10-18
KR100829288B1 (ko) 2008-05-13
KR20010040750A (ko) 2001-05-15
KR20070060164A (ko) 2007-06-12

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