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AT297101B - Halbleitervorrichtung, insbesondere Feldeffekttransistor, bei der ein Halbleitermaterial vom Typ A<II>B<VI> angewandt wird, und Verfahren zur Herstellung einer derartigen Halbleitervorrichtung - Google Patents

Halbleitervorrichtung, insbesondere Feldeffekttransistor, bei der ein Halbleitermaterial vom Typ A<II>B<VI> angewandt wird, und Verfahren zur Herstellung einer derartigen Halbleitervorrichtung

Info

Publication number
AT297101B
AT297101B AT747767A AT747767A AT297101B AT 297101 B AT297101 B AT 297101B AT 747767 A AT747767 A AT 747767A AT 747767 A AT747767 A AT 747767A AT 297101 B AT297101 B AT 297101B
Authority
AT
Austria
Prior art keywords
semiconductor device
producing
field effect
effect transistor
type
Prior art date
Application number
AT747767A
Other languages
English (en)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Application granted granted Critical
Publication of AT297101B publication Critical patent/AT297101B/de

Links

Classifications

    • H01L29/78—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/479—Application of electric currents or fields, e.g. for electroforming
    • H01L29/00—
    • H01L29/22—
    • H01L29/227—
    • H01L29/786—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/064—Gp II-VI compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
AT747767A 1966-08-17 1967-08-14 Halbleitervorrichtung, insbesondere Feldeffekttransistor, bei der ein Halbleitermaterial vom Typ A<II>B<VI> angewandt wird, und Verfahren zur Herstellung einer derartigen Halbleitervorrichtung AT297101B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6611537A NL6611537A (de) 1966-08-17 1966-08-17

Publications (1)

Publication Number Publication Date
AT297101B true AT297101B (de) 1972-03-10

Family

ID=19797428

Family Applications (1)

Application Number Title Priority Date Filing Date
AT747767A AT297101B (de) 1966-08-17 1967-08-14 Halbleitervorrichtung, insbesondere Feldeffekttransistor, bei der ein Halbleitermaterial vom Typ A<II>B<VI> angewandt wird, und Verfahren zur Herstellung einer derartigen Halbleitervorrichtung

Country Status (11)

Country Link
US (1) US3518511A (de)
JP (1) JPS4615447B1 (de)
AT (1) AT297101B (de)
BE (1) BE702692A (de)
CH (1) CH478457A (de)
DE (1) DE1614272A1 (de)
ES (2) ES355667A1 (de)
FR (1) FR1546614A (de)
GB (1) GB1193716A (de)
NL (1) NL6611537A (de)
SE (1) SE349894B (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3780427A (en) * 1969-04-25 1973-12-25 Monsanto Co Ohmic contact to zinc sulfide devices
US3614551A (en) * 1969-04-25 1971-10-19 Monsanto Co Ohmic contact to zinc sulfide devices
DE3011952C2 (de) * 1980-03-27 1982-06-09 Siemens AG, 1000 Berlin und 8000 München Sperrfreier niederohmiger Kontakt auf III-V-Halbleitermaterial
EP0242902A3 (de) * 1986-03-26 1988-08-31 Raychem Limited Schutzeinrichtung

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL257217A (de) * 1959-12-07
NL282170A (de) * 1961-08-17
US3290569A (en) * 1964-02-14 1966-12-06 Rca Corp Tellurium thin film field effect solid state electrical devices
US3379931A (en) * 1964-12-01 1968-04-23 Gen Telephone & Elect Electroluminescent translator utilizing thin film transistors

Also Published As

Publication number Publication date
CH478457A (de) 1969-09-15
ES344100A1 (es) 1968-12-16
FR1546614A (fr) 1968-11-22
US3518511A (en) 1970-06-30
SE349894B (de) 1972-10-09
NL6611537A (de) 1968-02-19
ES355667A1 (es) 1970-01-01
GB1193716A (en) 1970-06-03
BE702692A (de) 1968-02-14
JPS4615447B1 (de) 1971-04-26
DE1614272A1 (de) 1970-02-26

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Legal Events

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