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NL188923B - Werkwijze ter vervaardiging van een halfgeleiderinrichting. - Google Patents

Werkwijze ter vervaardiging van een halfgeleiderinrichting.

Info

Publication number
NL188923B
NL188923B NLAANVRAGE8302383,A NL8302383A NL188923B NL 188923 B NL188923 B NL 188923B NL 8302383 A NL8302383 A NL 8302383A NL 188923 B NL188923 B NL 188923B
Authority
NL
Netherlands
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Application number
NLAANVRAGE8302383,A
Other languages
English (en)
Other versions
NL188923C (nl
NL8302383A (nl
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NLAANVRAGE8302383,A priority Critical patent/NL188923C/nl
Priority to DE3423776A priority patent/DE3423776C2/de
Priority to US06/627,308 priority patent/US4535529A/en
Priority to IT21721/84A priority patent/IT1174221B/it
Priority to CH3177/84A priority patent/CH665308A5/de
Priority to FR8410513A priority patent/FR2548831B1/fr
Priority to GB08417046A priority patent/GB2143086B/en
Priority to JP59137406A priority patent/JPS6037760A/ja
Priority to CA000458184A priority patent/CA1216966A/en
Publication of NL8302383A publication Critical patent/NL8302383A/nl
Publication of NL188923B publication Critical patent/NL188923B/nl
Application granted granted Critical
Publication of NL188923C publication Critical patent/NL188923C/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2205—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8248—Combination of bipolar and field-effect technology
    • H01L21/8249—Bipolar and MOS technology

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
NLAANVRAGE8302383,A 1983-07-05 1983-07-05 Werkwijze ter vervaardiging van een halfgeleiderinrichting. NL188923C (nl)

Priority Applications (9)

Application Number Priority Date Filing Date Title
NLAANVRAGE8302383,A NL188923C (nl) 1983-07-05 1983-07-05 Werkwijze ter vervaardiging van een halfgeleiderinrichting.
DE3423776A DE3423776C2 (de) 1983-07-05 1984-06-28 Verfahren zur Herstellung einer Halbleiteranordnung
IT21721/84A IT1174221B (it) 1983-07-05 1984-07-02 Metodo di fabbricazione di un dispositivo semiconduttore e dispositivo semiconduttore fabbricato con tale metodo
CH3177/84A CH665308A5 (de) 1983-07-05 1984-07-02 Verfahren zur herstellung einer halbleiteranordnung.
US06/627,308 US4535529A (en) 1983-07-05 1984-07-02 Method of making semiconductor devices by forming an impurity adjusted epitaxial layer over out diffused buried layers having different lateral conductivity types
FR8410513A FR2548831B1 (fr) 1983-07-05 1984-07-03 Procede de realisation d'au moins une couche profonde dans un dispositif a semi-conducteur
GB08417046A GB2143086B (en) 1983-07-05 1984-07-04 Semiconductor device manufacture
JP59137406A JPS6037760A (ja) 1983-07-05 1984-07-04 半導体装置の製造方法
CA000458184A CA1216966A (en) 1983-07-05 1984-07-05 Method of manufacturing a semiconductor device and semiconductor device manufactured by the method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8302383 1983-07-05
NLAANVRAGE8302383,A NL188923C (nl) 1983-07-05 1983-07-05 Werkwijze ter vervaardiging van een halfgeleiderinrichting.

Publications (3)

Publication Number Publication Date
NL8302383A NL8302383A (nl) 1985-02-01
NL188923B true NL188923B (nl) 1992-06-01
NL188923C NL188923C (nl) 1992-11-02

Family

ID=19842115

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE8302383,A NL188923C (nl) 1983-07-05 1983-07-05 Werkwijze ter vervaardiging van een halfgeleiderinrichting.

Country Status (9)

Country Link
US (1) US4535529A (nl)
JP (1) JPS6037760A (nl)
CA (1) CA1216966A (nl)
CH (1) CH665308A5 (nl)
DE (1) DE3423776C2 (nl)
FR (1) FR2548831B1 (nl)
GB (1) GB2143086B (nl)
IT (1) IT1174221B (nl)
NL (1) NL188923C (nl)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6031232A (ja) * 1983-07-29 1985-02-18 Toshiba Corp 半導体基体の製造方法
US4578128A (en) * 1984-12-03 1986-03-25 Ncr Corporation Process for forming retrograde dopant distributions utilizing simultaneous outdiffusion of dopants
US5023193A (en) * 1986-07-16 1991-06-11 National Semiconductor Corp. Method for simultaneously fabricating bipolar and complementary field effect transistors using a minimal number of masks
JPH01161752A (ja) * 1987-12-18 1989-06-26 Toshiba Corp 半導体装置製造方法
KR910009739B1 (ko) * 1988-07-13 1991-11-29 삼성전자 주식회사 반도체장치의 제조방법
US5102811A (en) * 1990-03-20 1992-04-07 Texas Instruments Incorporated High voltage bipolar transistor in BiCMOS
JP2511784Y2 (ja) * 1991-01-11 1996-09-25 福代 杉田 繊維製品用仕上機
US5454258A (en) * 1994-05-09 1995-10-03 Olin Corporation Broad range moisture analyzer and method
US5556796A (en) * 1995-04-25 1996-09-17 Micrel, Inc. Self-alignment technique for forming junction isolation and wells
KR19980702335A (ko) * 1995-12-21 1998-07-15 요트. 게. 아. 롤페즈 리서프 반도체장치를 제조하는 방법과 이러한 방법에 의해서 제조된 반도체 장치
JP3304803B2 (ja) * 1997-02-07 2002-07-22 ヤマハ株式会社 多電源半導体装置の製造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5190277A (en) * 1975-02-05 1976-08-07 Handotaisochino seizohoho
JPS5214388A (en) * 1975-07-25 1977-02-03 Hitachi Ltd Process for complementary insulated gate semiconductor integrated circuit device
FR2358748A1 (fr) * 1976-07-15 1978-02-10 Radiotechnique Compelec Procede d'autoalignement des elements d'un dispositif semi-conducteur et dispositif realise suivant ce procede
US4132573A (en) * 1977-02-08 1979-01-02 Murata Manufacturing Co., Ltd. Method of manufacturing a monolithic integrated circuit utilizing epitaxial deposition and simultaneous outdiffusion
US4128439A (en) * 1977-08-01 1978-12-05 International Business Machines Corporation Method for forming self-aligned field effect device by ion implantation and outdiffusion
JPS5493981A (en) * 1978-01-09 1979-07-25 Toshiba Corp Semiconductor device
US4168997A (en) * 1978-10-10 1979-09-25 National Semiconductor Corporation Method for making integrated circuit transistors with isolation and substrate connected collectors utilizing simultaneous outdiffusion to convert an epitaxial layer
JPS567463A (en) * 1979-06-29 1981-01-26 Hitachi Ltd Semiconductor device and its manufacture
NL186662C (nl) * 1980-04-29 1992-03-16 Philips Nv Werkwijze ter vervaardiging van een halfgeleiderinrichting.
NL187328C (nl) * 1980-12-23 1991-08-16 Philips Nv Werkwijze ter vervaardiging van een halfgeleiderinrichting.
JPS57134948A (en) * 1981-02-14 1982-08-20 Pioneer Electronic Corp Semiconductor device
JPS57136342A (en) * 1981-02-17 1982-08-23 Fujitsu Ltd Manufacture of semiconductor device
US4420344A (en) * 1981-10-15 1983-12-13 Texas Instruments Incorporated CMOS Source/drain implant process without compensation of polysilicon doping
NL8104862A (nl) * 1981-10-28 1983-05-16 Philips Nv Halfgeleiderinrichting, en werkwijze ter vervaardiging daarvan.
US4442591A (en) * 1982-02-01 1984-04-17 Texas Instruments Incorporated High-voltage CMOS process
JPS59107561A (ja) * 1982-12-13 1984-06-21 Nec Corp 相補型絶縁ゲ−ト電界効果半導体集積回路装置

Also Published As

Publication number Publication date
IT8421721A0 (it) 1984-07-02
DE3423776C2 (de) 1997-07-31
GB2143086B (en) 1987-03-04
NL188923C (nl) 1992-11-02
FR2548831A1 (fr) 1985-01-11
CH665308A5 (de) 1988-04-29
NL8302383A (nl) 1985-02-01
DE3423776A1 (de) 1985-01-17
JPS6037760A (ja) 1985-02-27
GB8417046D0 (en) 1984-08-08
CA1216966A (en) 1987-01-20
US4535529A (en) 1985-08-20
JPH0412628B2 (nl) 1992-03-05
IT1174221B (it) 1987-07-01
GB2143086A (en) 1985-01-30
FR2548831B1 (fr) 1988-10-14
IT8421721A1 (it) 1986-01-02

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Legal Events

Date Code Title Description
A1B A search report has been drawn up
BC A request for examination has been filed
V1 Lapsed because of non-payment of the annual fee