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NL1016224A1 - Foto-basevormend middel en foto-zuurvormend middel bevattende foto- etssamenstelling. - Google Patents

Foto-basevormend middel en foto-zuurvormend middel bevattende foto- etssamenstelling.

Info

Publication number
NL1016224A1
NL1016224A1 NL1016224A NL1016224A NL1016224A1 NL 1016224 A1 NL1016224 A1 NL 1016224A1 NL 1016224 A NL1016224 A NL 1016224A NL 1016224 A NL1016224 A NL 1016224A NL 1016224 A1 NL1016224 A1 NL 1016224A1
Authority
NL
Netherlands
Prior art keywords
photo
forming agent
acid
base
etching composition
Prior art date
Application number
NL1016224A
Other languages
English (en)
Other versions
NL1016224C2 (nl
Inventor
Jae Chang Jung
Keun Kyu Kong
Jin Soo Kim
Ki Ho Baik
Original Assignee
Hyundai Electronics Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Ind filed Critical Hyundai Electronics Ind
Publication of NL1016224A1 publication Critical patent/NL1016224A1/nl
Application granted granted Critical
Publication of NL1016224C2 publication Critical patent/NL1016224C2/nl

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274Photolithographic processes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312Organic layers, e.g. photoresist
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055Radiation sensitive composition or product or process of making
    • Y10S430/114Initiator containing
    • Y10S430/115Cationic or anionic
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055Radiation sensitive composition or product or process of making
    • Y10S430/114Initiator containing
    • Y10S430/12Nitrogen compound containing

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
NL1016224A 1999-09-21 2000-09-20 Foto-basevormend middel en foto-zuurvormend middel bevattende foto- etssamenstelling. NL1016224C2 (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-1999-0040534A KR100481601B1 (ko) 1999-09-21 1999-09-21 광산 발생제와 함께 광염기 발생제를 포함하는 포토레지스트 조성물
KR19990040534 1999-09-21

Publications (2)

Publication Number Publication Date
NL1016224A1 true NL1016224A1 (nl) 2001-03-22
NL1016224C2 NL1016224C2 (nl) 2001-05-30

Family

ID=19612358

Family Applications (1)

Application Number Title Priority Date Filing Date
NL1016224A NL1016224C2 (nl) 1999-09-21 2000-09-20 Foto-basevormend middel en foto-zuurvormend middel bevattende foto- etssamenstelling.

Country Status (10)

Country Link
US (1) US6395451B1 (nl)
JP (1) JP3875474B2 (nl)
KR (1) KR100481601B1 (nl)
CN (1) CN1258119C (nl)
DE (1) DE10046891A1 (nl)
FR (1) FR2798747B1 (nl)
GB (1) GB2354596B (nl)
IT (1) IT1320256B1 (nl)
NL (1) NL1016224C2 (nl)
TW (1) TWI262358B (nl)

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US6548226B2 (en) * 2001-02-09 2003-04-15 United Microelectronics Corp. Photolithographic process
DE10120676B4 (de) * 2001-04-27 2005-06-16 Infineon Technologies Ag Verfahren zur Strukturierung einer Photolackschicht
DE10120674B4 (de) 2001-04-27 2005-06-16 Infineon Technologies Ag Verfahren zur Strukturierung einer Photolackschicht
DE10120673B4 (de) * 2001-04-27 2007-01-25 Infineon Technologies Ag Verfahren zur Strukturierung einer Photolackschicht
US6696216B2 (en) * 2001-06-29 2004-02-24 International Business Machines Corporation Thiophene-containing photo acid generators for photolithography
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JP5276821B2 (ja) * 2007-10-01 2013-08-28 東京応化工業株式会社 レジスト組成物およびレジストパターン形成方法
US8236476B2 (en) 2008-01-08 2012-08-07 International Business Machines Corporation Multiple exposure photolithography methods and photoresist compositions
JP5175579B2 (ja) * 2008-02-25 2013-04-03 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP5276958B2 (ja) * 2008-11-19 2013-08-28 東京応化工業株式会社 レジスト組成物、およびレジストパターン形成方法
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KR20130039124A (ko) * 2011-10-11 2013-04-19 삼성전자주식회사 반도체 소자의 패턴 형성방법
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JP5879209B2 (ja) * 2012-06-21 2016-03-08 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法
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Also Published As

Publication number Publication date
KR20010028348A (ko) 2001-04-06
JP3875474B2 (ja) 2007-01-31
JP2001133980A (ja) 2001-05-18
US6395451B1 (en) 2002-05-28
TWI262358B (en) 2006-09-21
GB2354596B (en) 2003-06-18
FR2798747A1 (fr) 2001-03-23
NL1016224C2 (nl) 2001-05-30
DE10046891A1 (de) 2001-05-10
GB0022375D0 (en) 2000-10-25
IT1320256B1 (it) 2003-11-26
ITTO20000876A1 (it) 2002-03-19
CN1258119C (zh) 2006-05-31
ITTO20000876A0 (it) 2000-09-19
KR100481601B1 (ko) 2005-04-08
FR2798747B1 (fr) 2004-01-16
CN1289069A (zh) 2001-03-28
GB2354596A (en) 2001-03-28

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