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Liang et al., 2023 - Google Patents

Modulation of the morphotropic phase boundary for high-performance ductile thermoelectric materials

Liang et al., 2023

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Document ID
3959908193326569759
Author
Liang J
Liu J
Qiu P
Ming C
Zhou Z
Gao Z
Zhao K
Chen L
Shi X
Publication year
Publication venue
Nature Communications

External Links

Snippet

The flexible thermoelectric technique, which can convert heat from the human body to electricity via the Seebeck effect, is expected to provide a peerless solution for the power supply of wearables. The recent discovery of ductile semiconductors has opened a new …
Continue reading at www.nature.com (HTML) (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L35/12—Selection of the material for the legs of the junction
    • H01L35/14—Selection of the material for the legs of the junction using inorganic compositions
    • H01L35/18—Selection of the material for the legs of the junction using inorganic compositions comprising arsenic or antimony or bismuth, e.g. AIIIBV compounds
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L35/12—Selection of the material for the legs of the junction
    • H01L35/14—Selection of the material for the legs of the junction using inorganic compositions
    • H01L35/16—Selection of the material for the legs of the junction using inorganic compositions comprising tellurium or selenium or sulfur
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L35/28—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof operating with Peltier or Seebeck effect only
    • H01L35/32—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof operating with Peltier or Seebeck effect only characterised by the structure or configuration of the cell or thermo-couple forming the device including details about, e.g., housing, insulation, geometry, module
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L35/34—Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L35/02—Details
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L39/00—Devices using superconductivity; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L39/02—Details

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