Biswas et al., 2012 - Google Patents
High-performance bulk thermoelectrics with all-scale hierarchical architecturesBiswas et al., 2012
View PDF- Document ID
- 600129739739159666
- Author
- Biswas K
- He J
- Blum I
- Wu C
- Hogan T
- Seidman D
- Dravid V
- Kanatzidis M
- Publication year
- Publication venue
- Nature
External Links
Snippet
With about two-thirds of all used energy being lost as waste heat, there is a compelling need for high-performance thermoelectric materials that can directly and reversibly convert heat to electrical energy. However, the practical realization of thermoelectric materials is limited by …
- 229910004411 SrTe 0 abstract description 33
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L35/12—Selection of the material for the legs of the junction
- H01L35/14—Selection of the material for the legs of the junction using inorganic compositions
- H01L35/22—Selection of the material for the legs of the junction using inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen or germanium or silicon, e.g. superconductors
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L35/12—Selection of the material for the legs of the junction
- H01L35/14—Selection of the material for the legs of the junction using inorganic compositions
- H01L35/18—Selection of the material for the legs of the junction using inorganic compositions comprising arsenic or antimony or bismuth, e.g. AIIIBV compounds
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L35/28—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof operating with Peltier or Seebeck effect only
- H01L35/32—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof operating with Peltier or Seebeck effect only characterised by the structure or configuration of the cell or thermo-couple forming the device including details about, e.g., housing, insulation, geometry, module
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L35/34—Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Biswas et al. | High-performance bulk thermoelectrics with all-scale hierarchical architectures | |
Xu et al. | Dense dislocations enable high-performance PbSe thermoelectric at low-medium temperatures | |
Boukai et al. | Silicon nanowires as efficient thermoelectric materials | |
Biswas et al. | Strained endotaxial nanostructures with high thermoelectric figure of merit | |
Rhyee et al. | Peierls distortion as a route to high thermoelectric performance in In4Se3-δ crystals | |
Xie et al. | Unique nanostructures and enhanced thermoelectric performance of melt-spun BiSbTe alloys | |
Zhao et al. | Superior intrinsic thermoelectric performance with zT of 1.8 in single-crystal and melt-quenched highly dense Cu2-x Se bulks | |
Pei et al. | Convergence of electronic bands for high performance bulk thermoelectrics | |
Wu et al. | Resonant level-induced high thermoelectric response in indium-doped GeTe | |
Zhao et al. | Superparamagnetic enhancement of thermoelectric performance | |
Lee et al. | Contrasting role of antimony and bismuth dopants on the thermoelectric performance of lead selenide | |
Asfandiyar et al. | Thermoelectric SnS and SnS-SnSe solid solutions prepared by mechanical alloying and spark plasma sintering: Anisotropic thermoelectric properties | |
Fan et al. | p-type Bi0. 4Sb1. 6Te3 nanocomposites with enhanced figure of merit | |
Zhang et al. | High figures of merit and natural nanostructures in Mg2Si0. 4Sn0. 6 based thermoelectric materials | |
Chen et al. | Twisting phonons in complex crystals with quasi-one-dimensional substructures | |
Zou et al. | Enhanced thermoelectric performance of β-Zn4Sb3 based nanocomposites through combined effects of density of states resonance and carrier energy filtering | |
Li et al. | Wide-temperature-range thermoelectric n-type Mg3 (Sb, Bi) 2 with high average and peak zT values | |
Chiu et al. | A strategy to optimize the thermoelectric performance in a spark plasma sintering process | |
Lan et al. | High Thermoelectric Performance of Nanostructured In 2 O 3‐Based Ceramics | |
Xie et al. | Nonmagnetic In Substituted CuFe1–x In x S2 Solid Solution Thermoelectric | |
Singh et al. | Nanostructuring and more | |
Ou et al. | High thermoelectric performance of all-oxide heterostructures with carrier double-barrier filtering effect | |
Yan et al. | Thickness effects for thermoelectric property of antimony telluride nanoplatelets via solvothermal method | |
Gao et al. | Enhanced figure of merit in bismuth-antimony fine-grained alloys at cryogenic temperatures | |
Wu et al. | Enhanced thermoelectric figure of merit in nanostructured ZnO by nanojunction effect |