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Jindal et al., 2022 - Google Patents

Temperature-dependent field cycling behavior of ferroelectric hafnium zirconium oxide (HZO) MFM capacitors

Jindal et al., 2022

Document ID
3880102832311408618
Author
Jindal S
Manhas S
Balatti S
Kumar A
Pakala M
Publication year
Publication venue
IEEE Transactions on Electron Devices

External Links

Snippet

In this article, we study the field cycling behavior of ALD-deposited ferroelectric Hf 0.5 Zr 0.5 O 2 with TiN as the top and bottom electrodes on the silicon substrate. We investigate the effect of temperature on the endurance, capacitance, and leakage of the device. We observe …
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