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Gaddam et al., 2020 - Google Patents

Insertion of HfO 2 seed/dielectric layer to the ferroelectric HZO films for heightened remanent polarization in MFM capacitors

Gaddam et al., 2020

Document ID
6235018005519027223
Author
Gaddam V
Das D
Jeon S
Publication year
Publication venue
IEEE Transactions on Electron Devices

External Links

Snippet

This article highlights the role of HfO 2 seed/dielectric insertion layers on the ferroelectric properties of hafnium zirconium oxide (HZO)-based metal-ferroelectric-metal (MFM) capacitors. Maximum remanent polarization (Pr) of 22.1 μC/cm 2 was achieved when HfO 2 …
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