[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Vishnumurthy et al., 2024 - Google Patents

Ferroelectric HfO2-based Capacitors for FeRAM: Reliability from Field Cycling Endurance to Retention

Vishnumurthy et al., 2024

Document ID
3876516133036303502
Author
Vishnumurthy P
Alcala R
Mikolajick T
Schroeder U
Antunes L
Kersch A
Publication year
Publication venue
2024 IEEE International Reliability Physics Symposium (IRPS)

External Links

Snippet

When considering reliability concerns for introducing HfO2-based ferroelectric capacitors into production, polarization sensing issues caused by imprint have been shown to be the most critical. A common model for imprint in hafnium-zirconium oxide ferroelectric thin film …
Continue reading at ieeexplore.ieee.org (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/516—Insulating materials associated therewith with at least one ferroelectric layer
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/112—Read-only memory structures [ROM] and multistep manufacturing processes therefor
    • H01L27/115—Electrically programmable read-only memories; Multistep manufacturing processes therefor
    • H01L27/11502—Electrically programmable read-only memories; Multistep manufacturing processes therefor with ferroelectric memory capacitors
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

Similar Documents

Publication Publication Date Title
Mehmood et al. Bulk depolarization fields as a major contributor to the ferroelectric reliability performance in lanthanum doped Hf0. 5Zr0. 5O2 capacitors
Park et al. Review and perspective on ferroelectric HfO2-based thin films for memory applications
Lee et al. Built-in voltages and asymmetric polarization switching in Pb (Zr, Ti) O 3 thin film capacitors
Beck et al. Reproducible switching effect in thin oxide films for memory applications
Sudhama et al. A model for electrical conduction in metal‐ferroelectric‐metal thin‐film capacitors
Rodriguez et al. Reliability properties of low-voltage ferroelectric capacitors and memory arrays
Hsu et al. Direct current conduction properties of sputtered Pt/(Ba0. 7Sr0. 3) TiO3/Pt thin films capacitors
Lomenzo et al. Ferroelectric Hf 1-x Zr x O 2 memories: device reliability and depolarization fields
KR100754264B1 (en) Semiconductor ferroelectric storage device and its manufacturing method
Florent et al. Investigation of the endurance of FE-HfO 2 devices by means of TDDB studies
Wouters et al. Electrical conductivity in ferroelectric thin films
Ali et al. A study on the temperature-dependent operation of fluorite-structure-based ferroelectric HfO 2 memory FEFET: Pyroelectricity and reliability
Sadashivan et al. Evaluation of imprint in fully integrated (La, Sr) CoO 3/Pb (Nb, Zr, Ti) O 3/(La, Sr) CoO 3 ferroelectric capacitors
Jindal et al. Temperature-dependent field cycling behavior of ferroelectric hafnium zirconium oxide (HZO) MFM capacitors
Schroeder et al. Impact of field cycling on HfO 2 based non-volatile memory devices
Jiang et al. Resolving the Landauer paradox in ferroelectric switching by high-field charge injection
Kim et al. Low temperature (400° C) ferroelectric Hf0. 5Zr0. 5O2 capacitors for next-generation FRAM applications
Stolichnov et al. Dielectric breakdown in (Pb, La)(Zr, Ti) O 3 ferroelectric thin films with Pt and oxide electrodes
Vishnumurthy et al. Ferroelectric HfO2-based Capacitors for FeRAM: Reliability from Field Cycling Endurance to Retention
Atanassova et al. Effects of the metal gate on the stress-induced traps in Ta2O5/SiO2 stacks
Jung et al. Impact of interface layer on device characteristics of Si: HfO 2-based FeFET’s
Taylor et al. Pulse switching characterization of organometallic chemical vapor deposited PbZrxTi1− xO3 thin films for high-density memory applications
Alcala et al. The Role of Interface Dynamics on the Reliability Performance of BEOL Integrated Ferroelectric HfO 2 Capacitors
Laha et al. Leakage current conduction of pulsed excimer laser ablated BaBi 2 Nb 2 O 9 thin films
Podgorny et al. Effect of metal electrodes on the steady-state leakage current in PZT thin film capacitors