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Lee et al., 2013 - Google Patents

Nanowire Channel InAlN/GaN HEMTs With High Linearity of $ g_ {\rm m} $ and $ f_ {\rm T} $

Lee et al., 2013

Document ID
13172772088353532669
Author
Lee D
Wang H
Hsu A
Azize M
Laboutin O
Cao Y
Johnson J
Beam E
Ketterson A
Schuette M
Saunier P
Palacios T
Publication year
Publication venue
IEEE electron device letters

External Links

Snippet

This letter reports a high linearity InAlN/GaN high-electron-mobility transistor (HEMT) with a nanowire channel structure. It is found that the increase of source access resistance with drain current severely limits the linearity of GaN HEMTs. By increasing the ratio of the source …
Continue reading at ieeexplore.ieee.org (other versions)

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