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Najmzadeh et al., 2012 - Google Patents

Local volume depletion/accumulation in GAA Si nanowire junctionless nMOSFETs

Najmzadeh et al., 2012

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Document ID
3021913469497450770
Author
Najmzadeh M
Sallese J
Berthomé M
Grabinski W
Ionescu A
Publication year
Publication venue
IEEE transactions on electron devices

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Snippet

In this paper, we report, for the first time, corner effect analysis in the gate-all-around equilateral triangular silicon nanowire (NW) junctionless (JL) nMOSFETs, from subthreshold to strong accumulation regime. Corners were found to accumulate and deplete more …
Continue reading at infoscience.epfl.ch (PDF) (other versions)

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