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Ho et al., 2012 - Google Patents

pMOSFET Performance Enhancement With Strained $\hbox {Si} _ {1-x}\hbox {Ge} _ {x} $ Channels

Ho et al., 2012

Document ID
15915364258533587221
Author
Ho B
Xu N
Liu T
Publication year
Publication venue
IEEE transactions on Electron devices

External Links

Snippet

The inversion-layer hole mobility in MOSFETs with thin silicon-germanium (Si 1-x Ge x) channels grown pseudomorphically on Si is calculated using a self-consistent 6× 6 k· p Poisson-Schrödinger mobility simulator calibrated to experimental and simulation data. The …
Continue reading at ieeexplore.ieee.org (other versions)

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