[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Huang et al., 2019 - Google Patents

Thermal effects on the electrical and optical characteristics of micro‐light‐emitting diodes with different current spreading layer

Huang et al., 2019

View PDF @Full View
Document ID
252476374192486321
Author
Huang H
Wu H
Huang C
Han Q
Wang C
Wang H
Publication year
Publication venue
physica status solidi (a)

External Links

Snippet

GaN‐based top‐emitting micro‐blue‐light‐emitting diode chips with different current spreading layers (CSLs) and different sizes are fabricated, analyzed at different ambient temperatures, and their performances are compared. The observed behaviors are attributed …
Continue reading at onlinelibrary.wiley.com (PDF) (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/50—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED];
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H05B33/08—Circuit arrangements not adapted to a particular application

Similar Documents

Publication Publication Date Title
Zhao et al. 2000 PPI silicon-based AlGaInP red micro-LED arrays fabricated via wafer bonding and epilayer lift-off
Zhu et al. Enhancement of the modulation bandwidth for GaN-based light-emitting diode by surface plasmons
Bai et al. Greatly enhanced performance of InGaN/GaN nanorod light emitting diodes
US11695095B2 (en) Integration of III-Nitride nanowire on transparent conductive substrates for optoelectronic and electronic devices
Wei et al. Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands
Huang et al. Thermal effects on the electrical and optical characteristics of micro‐light‐emitting diodes with different current spreading layer
Yang et al. Enhanced Electroluminescence from ZnO Quantum Dot Light‐Emitting Diodes via Introducing Al2O3 Retarding Layer and Ag@ ZnO Hybrid Nanodots
Horng et al. High performance GaN-based flip-chip LEDs with different electrode patterns
Liu et al. Numerical simulation and experimental investigation of GaN-based flip-chip LEDs and top-emitting LEDs
Hang et al. Artificially formed resistive ITO/p-GaN junction to suppress the current spreading and decrease the surface recombination for GaN-based micro-light emitting diodes
Lv et al. High power InGaN/GaN flip‐chip LEDs with via‐hole‐based two‐level metallization electrodes
Zhu et al. GaN-based flip-chip parallel micro LED array for visible light communication
Lu et al. Low thermal-mass LEDs: size effect and limits
Lin et al. Thermal behavior of AlGaN-based deep-UV LEDs
Mughal et al. High‐power LEDs using Ga‐doped ZnO current‐spreading layers
Tan et al. Improving the–3 dB bandwidth of micro-size LEDs through p-electrode patterns for visible light communication
Horng et al. P-side up AlGaInP-based light emitting diodes with dot-patterned GaAs contact layers
Nishikawa et al. Electroluminescence properties of Eu‐doped GaN‐based red light‐emitting diode by OMVPE
Xu et al. Enhanced performance of vertical-structured InGaN micro-pixelated light-emitting-diode array fabricated using an ion implantation process
Gagrani et al. n‐SnOx as a Transparent Electrode and Heterojunction for p‐InP Nanowire Light Emitting Diodes
Han et al. Breakdown-induced conductive channel for III-nitride light-emitting devices
Kim et al. Design and fabrication of vertical-injection GaN-based light-emitting diodes
Kim et al. Improved Light Output Power of 16× 16 Pixelated Micro‐LEDs for Headlights by Enhancing the Reflectivity and Coverage of the p‐Electrode
Tsai et al. High-voltage thin-film GaN LEDs fabricated on ceramic substrates: the alleviated droop effect at 670 W/cm 2
Yin et al. Performance enhancement of gallium‐nitride‐based flip‐chip light‐emitting diode with through‐via structure