[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Bai et al., 2012 - Google Patents

Greatly enhanced performance of InGaN/GaN nanorod light emitting diodes

Bai et al., 2012

View PDF @Full View
Document ID
17140536401600247436
Author
Bai J
Wang Q
Wang T
Publication year
Publication venue
physica status solidi (a)

External Links

Snippet

For the first time we demonstrate InGaN/GaN‐based nanorod light emitting diodes (LEDs) with both very good current–voltage (I–V) characteristics and significantly enhanced emission. Our LED nanorods are fabricated based on InGaN/GaN LED epiwafers …
Continue reading at onlinelibrary.wiley.com (PDF) (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof

Similar Documents

Publication Publication Date Title
Bai et al. Greatly enhanced performance of InGaN/GaN nanorod light emitting diodes
Olivier et al. Shockley-Read-Hall and Auger non-radiative recombination in GaN based LEDs: A size effect study
Li et al. Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays
Li et al. Deep‐ultraviolet micro‐LEDs exhibiting high output power and high modulation bandwidth simultaneously
Rong et al. High‐output‐power ultraviolet light source from quasi‐2D GaN quantum structure
Su et al. Suppressed quantum-confined Stark effect in InGaN-based LEDs with nano-sized patterned sapphire substrates
Wei et al. Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands
Kölper et al. Core–shell InGaN nanorod light emitting diodes: Electronic and optical device properties
Zhuang et al. 630-nm red InGaN micro-light-emitting diodes (< 20 μm× 20 μm) exceeding 1 mW/mm 2 for full-color micro-displays
Chen et al. High performance InGaN/GaN nanorod light emitting diode arrays fabricated by nanosphere lithography and chemical mechanical polishing processes
Zhang et al. Deep ultraviolet light-emitting diodes based on a well-ordered AlGaN nanorod array
Lin et al. Spatially resolved study of quantum efficiency droop in InGaN light-emitting diodes
Wei et al. Efficiency improvement and droop behavior in nanospherical-lens lithographically patterned bottom and top photonic crystal InGaN/GaN light-emitting diodes
Li et al. Broadband full-color monolithic InGaN light-emitting diodes by self-assembled InGaN quantum dots
Shi et al. Characteristics of GaN-based LED fabricated on a GaN-on-silicon platform
Zhang et al. Enhancing the light extraction efficiency for AlGaN-based DUV LEDs with a laterally over-etched p-GaN layer at the top of truncated cones
Hang et al. Artificially formed resistive ITO/p-GaN junction to suppress the current spreading and decrease the surface recombination for GaN-based micro-light emitting diodes
Lin et al. Interplay of point defects, extended defects, and carrier localization in the efficiency droop of InGaN quantum wells light-emitting diodes investigated using spatially resolved electroluminescence and photoluminescence
Zhuang et al. Improved performance of InGaN-based red light-emitting diodes by micro-hole arrays
Horng et al. External stress effects on the optical and electrical properties of flexible InGaN-based green light-emitting diodes
Ogawa et al. Fabrication of InGaN/GaN MQW nano‐LEDs by hydrogen‐environment anisotropic thermal etching
Huang et al. Thermal effects on the electrical and optical characteristics of micro‐light‐emitting diodes with different current spreading layer
Li et al. Polarization‐resolved electroluminescence study of InGaN/GaN dot‐in‐a‐wire light‐emitting diodes grown by molecular beam epitaxy
Luo et al. Strain‐Modulated Light Emission Properties in a Single InGaN/GaN Multiple‐Quantum‐Well Microwire‐Based Flexible Light‐Emitting Diode
Peng et al. Green light-emitting diodes with improved efficiency by an in situ C-doping GaN current spreading layer