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Kim et al., 1998 - Google Patents

Realization of Vertically Stacked InGaAs/GaAs Quantum Wires on V‐grooves with (322) Facet Sidewalls by Chemical Beam Epitaxy

Kim et al., 1998

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Document ID
2493374489251740565
Author
Kim S
Ro J
Lee E
Publication year
Publication venue
ETRI journal

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Snippet

We report, for the first time, the fabrication of vertically stacked InGaAs/GaAs quantum wires (QWRs) on V‐grooved substrates by chemical beam epitaxy (CBE). To fabricate the vertically stacked QWRs structure, we have grown the GaAs resharpening barrier layers on …
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
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