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Davis et al., 1995 - Google Patents

Issues and examples regarding growth of AlN, GaN and AlxGa1− xN thin films via OMVPE and gas source MBE

Davis et al., 1995

Document ID
8811545684544620775
Author
Davis R
Weeks T
Bremser M
Tanaka S
Kern R
Sitar Z
Ailey K
Perry W
Wang C
Publication year
Publication venue
MRS Online Proceedings Library (OPL)

External Links

Snippet

Organometallic vapor phase epitaxy (OMVPE) and molecular beam epitaxy (MBE) are the most common methods for the growth of thin films of A1N and GaN. Sapphire is the most common substrate; however, a host of materials have been used with varying degrees of …
Continue reading at www.cambridge.org (other versions)

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