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Rhee et al., 2004 - Google Patents

Threshold voltage instability characteristics under positive dynamic stress in ultrathin HfO2 metal-oxide-semiconductor field-effect transistors

Rhee et al., 2004

Document ID
2333392713000771299
Author
Rhee S
Kang C
Kang C
Choi C
Choi R
Akbar M
Lee J
Publication year
Publication venue
Applied physics letters

External Links

Snippet

The characteristics of threshold voltage instability of HfO 2 metal-oxide-semiconductor field- effect transistors under positive dynamic stress were investigated. Compared to constant stress, a smaller threshold voltage shift was observed at higher frequency and lower duty …
Continue reading at pubs.aip.org (other versions)

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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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