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Yu et al., 2008 - Google Patents

Transistor threshold voltage modulation by Dy2O3 rare-earth oxide capping: The role of bulk dielectrics charge

Yu et al., 2008

Document ID
8674277842694999689
Author
Yu H
Chang S
Aoulaiche M
Wang X
Adelmann C
Kazer B
Absil P
Lauwers A
Biesemans S
Publication year
Publication venue
Applied Physics Letters

External Links

Snippet

The mechanism governing threshold voltage (V t) modulation in NiSi/SiON n-channel metal- oxide-semiconductor field-effect transistors when doping with rare-earth elements (dysprosium or Dy in this work) is studied. In addition to the widely reported interface dipole …
Continue reading at pubs.aip.org (other versions)

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    • H01L29/76—Unipolar devices, e.g. field effect transistors
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