[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Kimura, 2000 - Google Patents

Evaluation of magnesium oxide films by spectroscopic ellipsometry

Kimura, 2000

Document ID
2309040051561842432
Author
Kimura H
Publication year
Publication venue
MRS Online Proceedings Library

External Links

Snippet

Spectroscopic ellipsometry was used to evaluate the density and surface roughness of MgO films. The density of a film affects the dispersion of the film's refractive index, and the refractive index can be evaluated by spectroscopic ellipsometry. Among the various fitting …
Continue reading at link.springer.com (other versions)

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof

Similar Documents

Publication Publication Date Title
Guo et al. A spectroscopic ellipsometry study of cerium dioxide thin films grown on sapphire by rf magnetron sputtering
N. Hilfiker et al. Progress in spectroscopic ellipsometry: Applications from vacuum ultraviolet to infrared
US5061574A (en) Thick, low-stress films, and coated substrates formed therefrom
Krüger et al. Transparent MgF2-films by sol–gel coating: Synthesis and optical properties
Karpenko et al. Surface roughening during low temperature Si (100) epitaxy
Xu et al. The thickness-dependent band gap and defect features of ultrathin ZrO 2 films studied by spectroscopic ellipsometry
Broitman et al. Electrical and optical properties of CN x (0⩽ x⩽ 0.25) films deposited by reactive magnetron sputtering
Szmidt et al. Electrophysical properties of thin germanium/carbon layers produced on silicon using organometallic radio frequency plasma enhanced chemical vapor deposition process
Aouadi et al. Characterization of TiBN films grown by ion beam assisted deposition
Das et al. Quantum size effects on the optical properties of nc-Si QDs embedded in an a-SiO x matrix synthesized by spontaneous plasma processing
Kuo et al. Measurement of GaAs temperature‐dependent optical constants by spectroscopic ellipsometry
Gallas et al. SiO 2–TiO 2 Interfaces studied by ellipsometry and X-ray photoemission spectroscopy
US5156909A (en) Thick, low-stress films, and coated substrates formed therefrom, and methods for making same
Kimura Evaluation of magnesium oxide films by spectroscopic ellipsometry
Cai et al. Evolution of optical constants of silicon dioxide on silicon from ultrathin films to thick films
Aouadi et al. Characterization of CrBN films deposited by ion beam assisted deposition
Lee et al. Rotating-compensator multichannel ellipsometry for characterization of the evolution of nonuniformities in diamond thin-film growth
Snyder et al. Characterization of polycrystalline silicon thin‐film multilayers by variable angle spectroscopic ellipsometry
Magkoev et al. Comparative study of metal adsorption on the metal and the oxide surfaces
Deineka et al. Ellipsometric investigations of the refractive index depth profile in PZT thin films
Cui et al. Optical constants of Bi 2 Te 3 and Sb 2 Te 3 measured using spectroscopic ellipsometry
Hada et al. Evaluation of damage layer in an organic film with irradiation of energetic ion beams
Van et al. Growth of low and high refractive index dielectric layers as studied by in situ ellipsometry
Soto et al. Growth of beryllium nitride films by pulsed laser deposition; dielectric function determination
Memarzadeh et al. Ellipsometric study of ZnO/Ag/ZnO optical coatings: determination of layer thicknesses and optical constants