Mosca et al., 2001 - Google Patents
Magnetoresistance in Fe/ZnSe/Fe planar junctionsMosca et al., 2001
View PDF- Document ID
- 17618811988766725637
- Author
- Mosca D
- George J
- Maurice J
- Fert A
- Eddrief M
- Etgens V
- Publication year
- Publication venue
- Journal of magnetism and magnetic materials
External Links
Snippet
We report on the magnetoresistance measurements in Fe/ZnSe/Fe planar junctions. Fe/ZnSe/Fe structures were successfully grown by molecular beam epitaxy and subsequently patterned using optical lithography. At low temperature, the tunneling of …
- 230000005641 tunneling 0 abstract description 13
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices, e.g. Hall effect devices; using magneto-resistive devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANO-TECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE OR TREATMENT OF NANO-STRUCTURES
- B82Y10/00—Nano-technology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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