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Sealy, 1988 - Google Patents

Ion implantation doping of semiconductors

Sealy, 1988

Document ID
17680071136371723056
Author
Sealy B
Publication year
Publication venue
International materials reviews

External Links

Snippet

An overview of the use of ion implantation to dope silicon and gallium arsenide is presented. The problems associated with epitaxial regrowth in the solid phase and annealing, including rapid thermal annealing, are discussed in detail. Channelling, prior amorphisation, very high …
Continue reading at www.tandfonline.com (other versions)

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