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Ishiwara et al., 1985 - Google Patents

Formation of shallow p+ n junctions by B-ion implantation in Si substrates with amorphous layers

Ishiwara et al., 1985

Document ID
14927203714220440663
Author
Ishiwara H
Horita S
Publication year
Publication venue
Japanese journal of applied physics

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Snippet

The optimum conditions to form shallow p+ n junctions by B-ion implantation in Si substrates were investigated. In order to avoid a deep penetration of the B ions, they were implanted in amorphous Si (a-Si) layers on Si (100) substrates. These substrates were produced by …
Continue reading at iopscience.iop.org (other versions)

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