[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

Karar et al., 1999 - Google Patents

Characterization of avalanche photodiodes for calorimetry applications

Karar et al., 1999

View PDF
Document ID
17137031250283965448
Author
Karar A
Musienko Y
Vanel J
Publication year
Publication venue
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

External Links

Snippet

Silicon avalanche photodiodes (APDs) have been studied extensively as photosensor candidates for the electromagnetic calorimeter of the CMS detector at LHC. This work presents the measurements of APDs from Hamamatsu and EG&G, with particular emphasis …
Continue reading at citeseerx.ist.psu.edu (PDF) (other versions)

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/02—Dosimeters
    • G01T1/026—Semiconductor dose-rate meters
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/25—Arrangements for measuring currents or voltages or for indicating presence or sign thereof using digital measurement techniques
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/145—Indicating the presence of current or voltage
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00 and G01R33/00 - G01R35/00
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R13/00—Arrangements for displaying electric variables or waveforms
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light

Similar Documents

Publication Publication Date Title
Karar et al. Characterization of avalanche photodiodes for calorimetry applications
US6720588B2 (en) Avalanche photodiode for photon counting applications and method thereof
Collazuol et al. Single photon timing resolution and detection efficiency of the IRST silicon photo-multipliers
Nagai et al. Characterization of a large area silicon photomultiplier
Spinelli et al. Avalanche detector with ultraclean response for time-resolved photon counting
Giudice et al. A process and deep level evaluation tool: afterpulsing in avalanche junctions
Cova et al. Avalanche semiconductor detector for single optical photons with a time resolution of 60 ps
Mazzillo et al. Electro-optical performances of p-on-n and n-on-p silicon photomultipliers
Lecomte et al. Radiation detection measurements with a new “Buried Junction” silicon avalanche photodiode
Kim et al. Noise-free avalanche multiplication in Si solid state photomultipliers
Ghassemi et al. MPPC○ R
Engelmann et al. Spatially resolved dark count rate of SiPMs
Sadigov et al. Improvement of parameters of micro-pixel avalanche photodiodes
Dinu Silicon photomultipliers (SiPM)
Lo et al. A measuring system for studying the time-resolution capabilities of fast photomultipliers
Johnson et al. CMOS solid state photomultipliers for ultra-low light levels
Tudisco et al. A new generation of SPAD—Single-photon avalanche diodes
Lu et al. Silicon Photomultiplier selection for Large Array of Imaging Atmospheric Cherenkov Telescopes
Bertuccio et al. Current Noise Spectral Density and Excess Noise of a Silicon Low-Gain Avalanche Diode (LGAD)
Ghioni et al. Monolithic dual-detector for photon-correlation spectroscopy with wide dynamic range and optical 70-ps resolution
Pagano et al. Silicon photomultiplier: technology improvement and performance
Shanmugam et al. Experimental characterization of silicon drift detector for X-ray spectrometry: Comparison with theoretical estimation
Park et al. Quenching bias circuit with current mirror for single photon detection
Campisi et al. Multipixel geiger-mode photon detectors for ultra-weak light sources
Piatek Measuring the Electrical and Optical Properties of an MPPC