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Yu et al., 2004 - Google Patents

Improved step-graded-channel heterostructure field-effect transistor

Yu et al., 2004

Document ID
16929276347151499888
Author
Yu S
Hsu W
Li Y
Chen Y
Publication year
Publication venue
Japanese journal of applied physics

External Links

Snippet

A heterostructure field-effect transistor with a step-graded channel has been successfully fabricated. The conduction electrons are distant from the AlGaAs/InGaAs interface; thus the Coulomb scattering is reduced, and consequently, electron mobility is increased. A high …
Continue reading at iopscience.iop.org (other versions)

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