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Xia et al., 2019 - Google Patents

$\beta $-Ga 2 O 3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz

Xia et al., 2019

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Document ID
10679257352233445276
Author
Xia Z
Xue H
Joishi C
Mcglone J
Kalarickal N
Sohel S
Brenner M
Arehart A
Ringel S
Lodha S
Lu W
Rajan S
Publication year
Publication venue
IEEE Electron Device Letters

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Snippet

As an ultra-wide bandgap semiconductor, β-Ga 2 O 3 has attracted great attention for high- power, high-voltage, and optoelectronic applications. However, until now, high-frequency performance of gallium oxide devices has been limited to relatively low current gain cutoff …
Continue reading at ieeexplore.ieee.org (PDF) (other versions)

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