Nguyen et al., 2003 - Google Patents
Epitaxial directional growth of indium-doped tin oxide nanowire arraysNguyen et al., 2003
View PDF- Document ID
- 15762312768348701064
- Author
- Nguyen P
- Ng H
- Kong J
- Cassell A
- Quinn R
- Li J
- Han J
- McNeil M
- Meyyappan M
- Publication year
- Publication venue
- Nano letters
External Links
Snippet
In this report, we show controlled in-situ doping of a single crystalline metal oxide nanowire, using indium-doped tin oxide (In− SnO2) as an example, during a heteroepitaxial growth process. Highly regular and high-density arrays of In− SnO2 nanowires, which demonstrate …
- 239000002070 nanowire 0 title abstract description 177
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GASES [GHG] EMISSION, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/54—Material technologies
- Y02E10/549—Material technologies organic PV cells
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