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Zhang et al., 2006 - Google Patents

Growth mechanism, photoluminescence, and field-emission properties of ZnO nanoneedle arrays

Zhang et al., 2006

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Document ID
17612417010290570579
Author
Zhang Z
Yuan H
Zhou J
Liu D
Luo S
Miao Y
Gao Y
Wang J
Liu L
Song L
Xiang Y
Zhao X
Zhou W
Xie S
Publication year
Publication venue
The Journal of Physical Chemistry B

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Snippet

ZnO nanoneedle arrays have been grown on a large scale with a chemical vapor deposition method at 680° C. Zn powder and O2 gas are employed as source materials, and catalyst- free Si plates are used as substrates. Energy-dispersive X-ray and X-ray diffraction analyses …
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Classifications

    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B31/00Carbon; Compounds thereof
    • C01B31/02Preparation of carbon; Purification; After-treatment
    • C01B31/0206Nanosized carbon materials
    • C01B31/022Carbon nanotubes
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B31/00Carbon; Compounds thereof
    • C01B31/02Preparation of carbon; Purification; After-treatment
    • C01B31/04Graphite, including modified graphite, e.g. graphitic oxides, intercalated graphite, expanded graphite or graphene
    • C01B31/0438Graphene
    • C01B31/0446Preparation
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B31/00Carbon; Compounds thereof
    • C01B31/02Preparation of carbon; Purification; After-treatment
    • C01B31/0206Nanosized carbon materials
    • C01B31/0293Other structures, e.g. nano-onions, nano-scrolls, nano-horns, nano-cones or nano-walls
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605Products containing multiple oriented crystallites, e.g. columnar crystallites

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