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Dhiman et al., 2020 - Google Patents

Analysis on Variations of Metal Gate Work Function on Junctionless Double Gate MOSFET with High-k Spacers

Dhiman et al., 2020

Document ID
14986250317401190550
Author
Dhiman G
Pourush R
Publication year
Publication venue
2020 International Conference on Emerging Trends in Communication, Control and Computing (ICONC3)

External Links

Snippet

The fabrication of nanometer-scale traditional MOSFETs with junctions has become very challenging. The newer devices like junction less double gate MOSFETs are in focus as they have shown good electrostatic behavior compared with traditional MOSFETs. In this paper …
Continue reading at ieeexplore.ieee.org (other versions)

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