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Xiao et al., 2015 - Google Patents

Back channel anodization amorphous indium gallium zinc oxide thin-film transistors process

Xiao et al., 2015

Document ID
13872404243914475266
Author
Xiao X
Shao Y
He X
Deng W
Zhang L
Zhang S
Publication year
Publication venue
IEEE Electron Device Letters

External Links

Snippet

A back channel anodization (BCA) process for fabrication of amorphous indium gallium zinc oxide thin-flim transistors (a-IGZO TFTs) is proposed and demonstrated for the first time. In the BCA process, a localized anodic oxidization (anodization) is successfully implemented …
Continue reading at ieeexplore.ieee.org (other versions)

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    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
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