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Wang et al., 2019 - Google Patents

Implementation of self-aligned top-gate amorphous zinc tin oxide thin-film transistors

Wang et al., 2019

Document ID
6428267210534541233
Author
Wang G
Chang B
Yang H
Zhou X
Zhang L
Zhang X
Zhang S
Publication year
Publication venue
IEEE Electron Device Letters

External Links

Snippet

Self-aligned top-gate (SATG) amorphous zinc tin oxide thin-film transistors (a-ZTO TFTs) are fabricated for the first time. Ar plasma treatment forms the self-aligned source/drain (S/D) region and reduces the sheet resistance of the a-ZTO S/D region from a very high value over …
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    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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