Yang et al., 2005 - Google Patents
Investigation of parallel connection of IGBTsYang et al., 2005
- Document ID
- 13405602836949715288
- Author
- Yang H
- Xuhui W
- Lingyun G
- Li W
- Feng Z
- Publication year
- Publication venue
- 2005 International Conference on Electrical Machines and Systems
External Links
Snippet
IGBT device has the advantages of high current, simple gate drive, high-frequency performance and etc; therefore it gains widely application in the drive system of electrical vehicles. However, the current carrying capacity, cost and reliability limit its further …
- 238000009114 investigational therapy 0 title description 2
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/483—Converters with outputs that each can have more than two voltages levels
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02T—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION
- Y02T10/00—Road transport of goods or passengers
- Y02T10/60—Other road transportation technologies with climate change mitigation effect
- Y02T10/64—Electric machine technologies for applications in electromobilty
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring, busbar connections
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Zhang et al. | A megawatt-scale medium-voltage high-efficiency high power density “SiC+ Si” hybrid three-level ANPC inverter for aircraft hybrid-electric propulsion systems | |
| Li et al. | Three-level active neutral-point-clamped zero-current-transition converter for sustainable energy systems | |
| CN102044985B (en) | Phase module for three-level integrated gate-commutated thyristor frequency converter | |
| US9019731B2 (en) | High-power medium-voltage drive power cell having power elements disposed on both sides of base plate | |
| JP6329944B2 (en) | Control device for insulated gate semiconductor element and power conversion device using the same | |
| CN102957326A (en) | Modularized structure for three-level inverter for wind power generation | |
| CN101860246A (en) | Inversion unit modularization structure device of photovoltaic inverter | |
| Roscoe et al. | Comparing SiC MOSFET, IGBT and Si MOSFET in LV distribution inverters | |
| Akca et al. | Hybrid switch use for light load efficiency improvement of a power inverter for stand-alone residential renewable energy system | |
| Yang et al. | Investigation of parallel connection of IGBTs | |
| JP2011015455A (en) | Three-phase power converter | |
| JP5557891B2 (en) | Three-phase power converter | |
| Ding et al. | Analysis on characteristic of 3.3‐kV full SiC device and railway traction converter design | |
| CN201682403U (en) | Modularized structure device of inverter unit in photovoltaic inverter | |
| CN102857078A (en) | Convertor unit based on welding type insulated gate bipolar transistor (IGBT) and pressure welding type diode antiparallel structure | |
| CN100466428C (en) | Medium power low voltage frequency converter based on insulation grating bipolar transistor | |
| CN103151938A (en) | Converter unit provided with inversely parallel cascade structure and based on welding type insulated gate bipolar translators (IGBT)s and pressure welding type diodes | |
| CN107911033B (en) | Design method for optimizing total stray inductance of main circuit and locomotive variable-current power unit | |
| CN201839188U (en) | Multi-inverter parallel output current equalizing structure | |
| CN202856630U (en) | IGBT clamped three-level frequency converter | |
| CN202103572U (en) | Chopping wave module distribution parameters absorber with three insulated gate bipolar transistors | |
| Dong et al. | Engineering design for structure and bus bar of 1.2 MVA hybrid clamped five-level converter module | |
| CN102857120A (en) | Insulated gate bipolar translator (IGBT) clamping three-level frequency converter | |
| CN211908647U (en) | Braking circuit and converter device comprising same | |
| CN211089493U (en) | Silicon carbide MOSFET half-bridge circuit, and parallel circuit module and power board |