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CN211908647U - Braking circuit and converter device comprising same - Google Patents

Braking circuit and converter device comprising same Download PDF

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Publication number
CN211908647U
CN211908647U CN202020262175.0U CN202020262175U CN211908647U CN 211908647 U CN211908647 U CN 211908647U CN 202020262175 U CN202020262175 U CN 202020262175U CN 211908647 U CN211908647 U CN 211908647U
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input port
direct current
circuit
current input
absorption
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CN202020262175.0U
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Chinese (zh)
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王武华
许亚明
常伟
童炎
周党生
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Shenzhen Hopewind Electric Co Ltd
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Shenzhen Hopewind Electric Co Ltd
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Abstract

The application discloses a brake circuit and a converter device comprising the same, wherein the brake circuit comprises a first direct current input port, a second direct current input port, at least one brake resistor and a switch loop, wherein the brake resistor and the switch loop are connected between the first direct current input port and the second direct current input port in series; the switch loop comprises a semiconductor component and an absorption circuit which are connected in parallel; the semiconductor component comprises a full-control type semiconductor switching device and a freewheeling diode which is connected with the full-control type semiconductor switching device in an inverse parallel mode. The brake circuit is formed by a brake resistor and a switch loop which are connected between a first direct current input port and a second direct current input port in series; the problems of large number of devices, high cost and low reliability of the conventional braking circuit are solved; the number of the components of the braking circuit is reduced, the cost of the braking circuit is reduced, and the reliability of the braking circuit is improved.

Description

Braking circuit and converter device comprising same
Technical Field
The present disclosure relates to the field of power electronics, and more particularly, to a braking circuit and a converter device including the braking circuit.
Background
With the development of industrial technology, ac-dc-ac converter devices are widely used in power generation industry and electric transmission industry, and converter devices applied to power generation industry need to meet the low-penetration standard required by the industry.
A converter applied to the electric transmission industry needs to brake a motor quickly, in the quick braking process, the energy of the motor can be input into a direct current link, and a braking circuit needs to be arranged on a bus for consuming the energy of the motor and stabilizing the work of the converter. Fig. 1 is a schematic structural view of an inverter device having a braking circuit provided on a bus bar.
IGCT (Integrated Gate Commutated Thyristors) and IGBT (Insulated Gate Bipolar Transistor) devices are fully-controlled semiconductor devices that are widely used in ac-dc-ac converters.
The IGCT is a high-voltage, high-power, fast-acting power electronic device, and such a medium-high voltage converter has become an important development direction of ac frequency conversion speed regulation devices in medium-high voltage fields, but is sensitive to the current rise rate. Fig. 2 is a schematic diagram of a conventional braking circuit structure with an IGCT as a switching device, which includes a snubber clamp circuit 11 (including a snubber inductor, a clamp diode, a clamp capacitor, and a clamp resistor) for limiting a current rise rate, a braking resistor 12, a braking resistor flywheel diode 13, an IGCT device 14, and an IGCT reverse flywheel diode 15.
The IGBT is a full-control device which can be widely applied to the field of low-voltage, medium-voltage and medium-low power current transformation, belongs to a voltage sensitive device, cannot bear reverse voltage, and can bear forward voltage without exceeding a rated value. Fig. 3 shows a schematic diagram of a conventional braking circuit structure with an IGBT as a switching device, which includes an absorption capacitor 21 for absorbing an IGBT turn-off spike voltage, a braking resistor 22, a braking resistor freewheeling diode 23, an IGBT device 24, and an IGBT reverse freewheeling diode 25.
IEGT (Injection Enhanced Gate Transistor) is a medium-high voltage Transistor device developed by toshiba, and its application method is similar to IGBT, and the brake circuit is similar to the brake circuit using IGBT as switching device.
In both the braking circuit using IGCT as the switching device and the braking circuit using IGBT or IEGT as the switching device, the number of devices used is large, the cost is high, and the reliability is low.
SUMMERY OF THE UTILITY MODEL
In view of the above, an object of the present application is to provide a braking circuit and a converter device including the braking circuit, so as to solve the problems of the existing braking circuit, such as large number of devices, high cost, and low reliability.
The technical scheme adopted by the application for solving the technical problems is as follows:
according to one aspect of the present application, a braking circuit includes a first dc input port, a second dc input port, at least one braking resistor and a switch circuit connected in series between the first dc input port and the second dc input port;
the switch loop comprises a semiconductor component and an absorption circuit which are connected in parallel;
the semiconductor component comprises a full-control type semiconductor switching device and a freewheeling diode which is connected with the full-control type semiconductor switching device in an inverse parallel mode.
The brake circuit comprises a first direct current input port, a second direct current input port, a third direct current input port, at least one brake resistor and a switch circuit which are connected between the first direct current input port and the second direct current input port in series, and at least one brake resistor and a switch circuit which are connected between the first direct current input port and the third direct current input port in series;
the switch loop comprises a semiconductor component and an absorption circuit which are connected in parallel;
the semiconductor component comprises a full-control type semiconductor switching device and a freewheeling diode which is connected with the full-control type semiconductor switching device in an inverse parallel mode.
The braking circuit comprises a first direct current input port, a second direct current input port, a third direct current input port, …, an m direct current input port, at least one braking resistor and a switch loop, wherein the braking resistor and the switch loop are connected between two adjacent direct current input ports in series;
the switch loop comprises a semiconductor component and an absorption circuit which are connected in parallel;
the semiconductor component comprises a full-control type semiconductor switching device and a freewheeling diode which is connected with the full-control type semiconductor switching device in an inverse parallel mode.
According to another aspect of the application, a deflector device is provided, comprising said braking circuit.
The brake circuit and the converter device comprising the brake circuit are characterized in that the brake circuit is formed by a brake resistor and a switch loop which are connected in series between a first direct current input port and a second direct current input port; the problems of large number of devices, high cost and low reliability of the conventional braking circuit are solved; the number of the components of the braking circuit is reduced, the cost of the braking circuit is reduced, and the reliability of the braking circuit is improved.
Drawings
FIG. 1 is a schematic view of a deflector;
FIG. 2 is a schematic diagram of a conventional braking circuit with an IGCT as a switching device;
FIG. 3 is a schematic diagram of a conventional braking circuit structure using an IGBT as a switching device;
FIG. 4 is a schematic diagram of a braking circuit according to an embodiment of the present application;
FIG. 5 is a schematic diagram of an absorption circuit in a braking circuit according to an embodiment of the present application;
FIG. 6 is a schematic diagram of another structure of an absorption circuit in the braking circuit according to the embodiment of the present application;
FIG. 7 is a schematic diagram of an absorption circuit and a brake resistor in a brake circuit according to an embodiment of the present disclosure;
FIG. 8 is a schematic diagram of another structure of the absorption circuit and the braking resistor in the braking circuit according to the embodiment of the present application;
FIG. 9 is a schematic diagram of a three-level braking circuit according to an embodiment of the present application;
fig. 10 is a schematic structural diagram of a braking circuit in the multi-bus series-connection converter device according to the embodiment of the present application.
The implementation, functional features and advantages of the objectives of the present application will be further explained with reference to the accompanying drawings.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present application clearer and clearer, the present application is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
In the description of the present application, it is to be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are only for convenience in describing the present application and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present application. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
First embodiment
As shown in fig. 4, the first embodiment of the present application provides a braking circuit, which includes a first dc input port P, a second dc input port N, at least one braking resistor 31 connected in series between the first dc input port P and the second dc input port N, and a switching circuit (shown as 32, 33);
the switching circuit includes a semiconductor component 32 and an absorption circuit 33 connected in parallel;
the semiconductor assembly includes a fully controlled semiconductor switching device 321, a freewheeling diode 322 connected in anti-parallel with the fully controlled semiconductor switching device 321.
In this embodiment, the voltage at the first dc input port P is higher than that at the second dc input port N. In other embodiments, the voltage at the second dc input port N may also be higher than the voltage at the first dc input port P.
The fully-controlled semiconductor switch device 321 includes three interfaces, a port C for current to flow in, a port E for current to flow out, and a control signal G; the freewheeling diode 322 includes two interfaces, a port a for connecting a current input and a port K for connecting a current output. The connection between C of the fully-controlled semiconductor switching device 321 and K of the freewheeling diode 322 is the first connection point of the semiconductor module 32, and the connection between E of the fully-controlled semiconductor switching device 321 and a of the freewheeling diode 322 is the second connection point of the semiconductor module 32.
The absorption circuit 33 is configured to absorb a spike voltage when the fully-controlled semiconductor switching device 321 is turned off, and reduce a voltage borne by the fully-controlled semiconductor switching device 321, and the absorption circuit 33 includes two connection points. The absorption circuit 33 and the semiconductor component 32 are connected in parallel to form a switch loop with an absorption circuit: the first connection point of the absorption circuit 33 is connected to the first connection point of the semiconductor component 32, and the second connection point of the absorption circuit 33 is connected to the second connection point of the semiconductor component 32.
The brake resistor 31 comprises two connection points, a first connection point and a second connection point; the first dc input port P is connected to a first connection point of the brake resistor 31, a second connection point of the brake resistor 31 is connected to a first connection point of the semiconductor device 32, and a second connection point of the semiconductor device 32 is connected to the second dc input port N.
When the fully-controlled semiconductor switch device 321 is an IGCT, and the IGCT is turned on, the braking circuit works, the energy at the direct-current end is released through the braking resistor 31, and the parasitic inductance of the braking resistor 31 and the connecting cable can limit the rise rate of the IGCT; when the IGCT is turned off, the turn-off voltage spike of the IGCT can be limited by the parallel absorption circuit 33.
The conventional braking circuit using the IGCT includes a snubber clamp circuit (snubber inductor, clamp diode, clamp capacitor, clamp resistor), a braking resistor freewheeling diode, an IGCT device, and an IGCT reverse freewheeling diode. The brake circuit using the IGCT only needs to be composed of the brake resistor, the IGCT device, the IGCT reverse freewheeling diode and the absorption circuit, and compared with the traditional scheme, the brake circuit using the IGCT has the advantages that the types and the number of circuit devices are greatly reduced.
When the fully-controlled semiconductor switching device 321 is an IGBT, when the IGBT is turned on, the capacitor of the snubber circuit discharges through the snubber resistor; when the IGBT is turned off, the turn-off voltage spike of the IGBT can be limited by the parallel snubber circuit 33.
The conventional braking circuit using the IGBT includes an absorption capacitor, a braking resistor freewheeling diode, an IGBT device, and an IGBT reverse freewheeling diode. This application scheme uses IGBT's braking circuit only need brake resistance, IGBT device, IGBT reverse freewheel diode, absorption circuit to constitute, compares traditional scheme, and this application scheme is with a diode less, increases an absorption circuit.
In the present embodiment, the fully-controlled semiconductor switching device includes, but is not limited to, one of IGCT, IGBT, and IEGT.
In this embodiment, the semiconductor device may be formed by combining a plurality of small-capacity semiconductor devices. When the ground insulation level of the semiconductor assembly does not meet the ground insulation requirement of the converter device, the ground insulation level can be improved by externally adding insulation, including but not limited to suspension and adding insulation materials to increase an electric gap and a creepage distance.
Referring to fig. 5, in one embodiment, the absorption circuit 33 includes an absorption resistor 331 and an absorption capacitor 332 connected in series.
In this embodiment, the first connection point of the absorption resistor 331 is the first connection point of the absorption circuit 33, the second connection point of the absorption resistor 331 is connected to the first connection point of the absorption capacitor 332, and the second connection point of the absorption capacitor 332 is the second connection point of the absorption circuit 33.
It is easily conceivable that the positions of the absorption resistor 331 and the absorption capacitor 332 may be interchanged, and that this can be achieved.
Referring to fig. 6, in one embodiment, the absorption circuit 33 includes an absorption resistor 331, an absorption capacitor 332, and an absorption diode 333;
the absorption resistor 331 and the absorption diode 333 are connected in parallel to form a parallel absorption loop, and the absorption capacitor 332 is connected in series with the parallel absorption loop.
Similarly, the positions of the absorption capacitor 332 and the parallel absorption circuit can be simply exchanged, and the same can be achieved.
Referring to fig. 7, in an embodiment, the absorption circuit 33 includes an absorption resistor 331, an absorption capacitor 332, and an absorption capacitor 334, the absorption capacitor 332 and the absorption capacitor 334 are connected in parallel to form a parallel absorption capacitor, and the absorption resistor 331 is connected in series with the parallel absorption capacitor; or,
the absorption circuit 33 includes an absorption capacitor (not shown), a first absorption resistor (not shown), and a second absorption resistor (not shown), the first absorption resistor and the second absorption resistor are connected in parallel to form a parallel absorption resistor, and the absorption capacitor is connected in series with the parallel absorption resistor.
In this embodiment, the absorption resistor and the absorption capacitor in the absorption circuit 33 can be formed by connecting a plurality of components having the same function in parallel, and the components connected in parallel have the same function as the original components and the same operation and effect.
Referring again to fig. 7, in one embodiment, the braking resistor 31 includes a braking resistor 311 and a braking resistor 312 connected in parallel.
The number of the braking resistors connected in parallel is not limited herein.
Referring to fig. 8, in one embodiment, the absorption circuit 33 includes an absorption resistor 331, an absorption capacitor 332, and an absorption resistor 335 sequentially connected in series; or,
the absorption circuit 33 includes a first absorption capacitor (not shown in the drawings), an absorption resistor (not shown in the drawings), and a second absorption capacitor (not shown in the drawings) connected in series in this order.
In this embodiment, the absorption resistor and the absorption capacitor in the absorption circuit 33 may be formed by connecting a plurality of components having the same function in series, the series components have the same function and the same effect as the original components, and the same functional components may be connected to different positions of the series circuit.
Referring again to fig. 8, in one embodiment, the braking circuit includes a braking resistor 311, a switch circuit (32, 33 in the figure), and a braking resistor 312, which are sequentially connected in series between the first dc input port P and the second dc input port N.
The brake circuit of the embodiment of the application is a brake circuit consisting of a brake resistor and a switch loop, wherein the brake resistor is connected between a first direct current input port and a second direct current input port in series; the problems of large number of devices, high cost and low reliability of the conventional braking circuit are solved; the number of the components of the braking circuit is reduced, the cost of the braking circuit is reduced, and the reliability of the braking circuit is improved.
Second embodiment
A second embodiment of the present application provides a brake circuit comprising a first dc input port, a second dc input port, a third dc input port, a sub-brake circuit 1 as in embodiment 1 connected in series between the first dc input port and the second dc input port, and a sub-brake circuit 2 as in embodiment 1 connected in series between the first dc input port and the third dc input port.
To better illustrate this embodiment, the following description is made in conjunction with fig. 9:
as shown in fig. 9, the braking circuit includes a first dc bus, a second dc bus, and a third dc bus, the dc input port P1 and the dc input port N1 of the sub braking circuit 1 are connected to the first dc bus and the second dc bus, respectively, and the dc input port P2 and the dc input port N2 of the sub braking circuit 2 are connected to the second dc bus and the third dc bus, respectively.
The sub brake circuit 1 includes a brake resistor 31, a semiconductor component 32, and an absorption circuit 33; the sub-braking circuit 2 includes a braking resistor 31', a semiconductor component 32', and an absorption circuit 33 '.
When the insulation level to ground of the semiconductor assembly 32 (semiconductor assembly 32') does not meet the requirement of the inverter, the insulation level to ground of the semiconductor assembly 32 (semiconductor assembly 32') can be raised by adding insulation outside, including but not limited to suspension, and adding insulation material to increase the electrical gap and creepage distance.
The semiconductor component 32 of the sub-braking circuit 1 and the semiconductor component 32' of the sub-braking circuit 2 may use one semiconductor module, which includes two semiconductor components connected in series.
The brake circuit of the embodiment of the application is a brake circuit consisting of a brake resistor and a switch loop, wherein the brake resistor is connected between a first direct current input port and a second direct current input port in series, and the brake resistor is connected between the second direct current input port and a third direct current input port in series; the problems of large number of devices, high cost and low reliability of the conventional braking circuit are solved; the number of the components of the braking circuit is reduced, the cost of the braking circuit is reduced, and the reliability of the braking circuit is improved.
Third embodiment
A third embodiment of the present application provides a deflector device comprising the braking circuit of the first embodiment.
In one embodiment, the converter device is an m-level converter device, and the m-level converter device comprises a first direct current bus, a second direct current bus, … a direct current bus, … m direct current bus;
the braking circuits according to the first embodiment are connected between the first dc bus and the second dc bus, between the second dc bus and the third dc bus, …, between the a-1 th dc bus and the a-th dc bus, …, and between the m-1 th dc bus and the m-th dc bus, respectively.
To better illustrate this embodiment, the following description is made in conjunction with fig. 10:
as shown in fig. 10, the multi-bus serial-connection inverter device includes a first dc input port, a second dc input port, … a dc input port, … m dc input port, the dc input port P1 and the dc input port N1 of the first brake circuit are respectively connected to the first dc input port and the second dc input port, the dc input port P2 and the dc input port N2 of the second brake circuit are respectively connected to the second dc input port and the third dc input port, …, the dc input port P (a-1) and the dc input port N (a-1) of the a-1 brake circuit are respectively connected to the a-1 dc input port and the a dc input port, …, and a direct current input port P (m-1) and a direct current input port N (m-1) of the m-1 braking circuit are respectively connected with the m-1 direct current input port and the mth direct current input port.
The aforementioned contents can be referred to for the braking circuit, and are not described herein again.
Adjacent semiconductor components use a semiconductor module which comprises two semiconductor components connected in series.
The converter device of the embodiment of the application comprises a braking circuit which is formed by a braking resistor and a switch loop, wherein the braking resistor and the switch loop are connected in series among a first direct current input port, a second direct current input port, … and an mth direct current input port; the problems of large number of devices, high cost and low reliability of the conventional braking circuit are solved; the number of the components of the braking circuit is reduced, the cost of the braking circuit is reduced, and the reliability of the braking circuit is improved. Meanwhile, when the converter is a medium-high voltage system, the brake circuit solves the problem that the existing brake circuit needs a high-voltage semiconductor device in use, the application range of the medium-high voltage semiconductor device is not as wide as that of a low-voltage semiconductor device, and the problems of high price and low cost performance exist; the cost is obviously reduced, and the cost performance is improved.
The preferred embodiments of the present application have been described above with reference to the accompanying drawings, and are not intended to limit the scope of the claims of the application accordingly. Any modifications, equivalents and improvements which may occur to those skilled in the art without departing from the scope and spirit of the present application are intended to be within the scope of the claims of the present application.

Claims (11)

1. A brake circuit comprises a first direct current input port, a second direct current input port, and is characterized by further comprising at least one brake resistor and a switch loop, wherein the brake resistor and the switch loop are connected between the first direct current input port and the second direct current input port in series;
the switch loop comprises a semiconductor component and an absorption circuit which are connected in parallel;
the semiconductor component comprises a full-control type semiconductor switching device and a freewheeling diode which is connected with the full-control type semiconductor switching device in an inverse parallel mode.
2. A brake circuit comprises a first direct current input port, a second direct current input port and a third direct current input port, and is characterized by further comprising at least one brake resistor and a switch circuit which are connected between the first direct current input port and the second direct current input port in series, and at least one brake resistor and a switch circuit which are connected between the first direct current input port and the third direct current input port in series;
the switch loop comprises a semiconductor component and an absorption circuit which are connected in parallel;
the semiconductor component comprises a full-control type semiconductor switching device and a freewheeling diode which is connected with the full-control type semiconductor switching device in an inverse parallel mode.
3. A brake circuit comprises a first direct current input port, a second direct current input port, a third direct current input port, … and an mth direct current input port, and is characterized by also comprising at least one brake resistor and a switch loop which are connected between two adjacent direct current input ports in series;
the switch loop comprises a semiconductor component and an absorption circuit which are connected in parallel;
the semiconductor component comprises a full-control type semiconductor switching device and a freewheeling diode which is connected with the full-control type semiconductor switching device in an inverse parallel mode.
4. A braking circuit according to any one of claims 1 to 3 wherein the snubber circuit comprises a snubber resistor and a snubber capacitor connected in series.
5. A braking circuit according to any one of claims 1 to 3, wherein the snubber circuit comprises a snubber resistor, a snubber capacitor and a snubber diode;
the absorption resistor and the absorption diode are connected in parallel to form a parallel absorption loop, and the absorption capacitor is connected in series with the parallel absorption loop.
6. A braking circuit according to any one of claims 1 to 3, wherein the semiconductor device is formed by combining a plurality of small-capacity semiconductor devices.
7. A braking circuit according to any one of claims 1 to 3 wherein the semiconductor component increases the electrical gap and creepage distance by means of floating or additional insulating material.
8. A braking circuit according to any one of claims 1 to 3 wherein the fully-controlled semiconductor switching device comprises at least one of an integrated gate commutated thyristor, an insulated gate bipolar transistor, and a gate-injection enhancement transistor.
9. A braking circuit according to claim 2, characterized in that one semiconductor module is used for both semiconductor components of the braking circuit, which semiconductor module comprises two series-connected semiconductor components.
10. A braking circuit according to claim 3, characterized in that one semiconductor module is used for adjacent semiconductor components of the braking circuit, which semiconductor module comprises two series-connected semiconductor components.
11. A deflector device, characterised in that it comprises a braking circuit as claimed in any one of claims 1 to 10.
CN202020262175.0U 2020-03-06 2020-03-06 Braking circuit and converter device comprising same Active CN211908647U (en)

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Application Number Priority Date Filing Date Title
CN202020262175.0U CN211908647U (en) 2020-03-06 2020-03-06 Braking circuit and converter device comprising same

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Application Number Priority Date Filing Date Title
CN202020262175.0U CN211908647U (en) 2020-03-06 2020-03-06 Braking circuit and converter device comprising same

Publications (1)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113726209A (en) * 2021-08-26 2021-11-30 中国长江三峡集团有限公司 Unloading circuit for wind power converter and control method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113726209A (en) * 2021-08-26 2021-11-30 中国长江三峡集团有限公司 Unloading circuit for wind power converter and control method thereof
CN113726209B (en) * 2021-08-26 2023-08-25 中国长江三峡集团有限公司 Unloading circuit for wind power converter and control method thereof

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